并口JTAG仿真器的设计与实现

通过对JTAG协议和标准并口规范的研究,提出了适合嵌入式系统调试的并口JTAG仿真器的实现方案.给出了硬件电路的设计,并通过并口信号的软件时序模拟实现底层通信从而完成JTAG协议的转换,最后提出开放接口的驱动软件架构,可以对目标机器进行在线编程和调试,实现人机交互以及与第三方开发工具的交互,并对基本功能进行了验证.     

Bootloader下USB接口镜像下载方案研究与实现

镜像下载功能是嵌入式系统中bootloader程序的一个重要功能,对嵌入式系统开发效率影响较大.本文在USB设备的功能单元层定义了简单的数据传输协议,并基于此协议在PXA255平台上实现了bootloader下的镜像下载功能,实践证明该方案可以在简单的硬件配置上达到较快的传输速度.     

基于AVR单片机的通用USB接口模块设计

以AVR单片机ATmega8和USB接口器件PDIUSBD12为核心,基于标准的USB1．1协议,设计一种通用USB接口模块,以满足嵌入式系统中对USB接口的需求。对模块的硬件电路或单片机固件程序的硬件接口层稍加修改即可用于其他各种微处理器。该模块可为各种嵌入式系统增加USB接口,实现与USB主机系统通信。     

GDB RSP协议与USB通信在嵌入式调试系统中的应用

对于嵌入式系统开发来说,远程调试器非常重要,而GDB RSP协议与USB通信一般在嵌入式调试系统中占有重要位置。文章在研究GDB RSP协议与USB通信的基础上,针对ZW100 DSP处理器的体系架构,给出了一种基于RSP命令交互与USB数据通信实现硬件仿真器与PC端调试软件进行调试信息交互的开发与实现方法。该设计实现了GDB通过硬件仿真器下载程序到目标板进行开发调试的功能,使得开发简洁便利,缩短了研发周期。     

基于FPGA的USB设备控制器设计

嵌入式系统向小型化和低功耗的方向发展要求减小板级设计的面积提高速率。基于嵌入式系统日益增长的规模和性能以及高速USB协议的要求,对USB设备控制器的系统进行相关模块的划分并利用Verilog硬件描述语言设计出高速USB接口IP核。经过仿真验证,该IP核符合高速USB协议的要求,满足系统对USB接口数据的传输需求。     

基于JTAG的ARM7TDMI处理器调试原理及实现

针对如何使用JTAG接口对ARM7 TDMI处理器进行调试，介绍了JTAG边界扫描结构及基本协议标准、ICE—breaker模块等与调试接口相关的内容，给出了两个运用JTAG接口对ARM7TDMI进行调试的实例加以验证。在由计算机、WIGGLER JTAG和SmartArm2200组成的实际调试系统中，成功读取了ARM7TDMI处理器的ID，实现了程序的下载和调试。实验结果表明，通过简单的JTAG接口可以实现对基于ARM7 TDMI处理器的嵌入式系统的调试。     

基于ARM 9的医疗手持信息终端电源设计

介绍基于ARM 9内核2410和基于USB接口RT2573的54 M无线网卡的医疗手持信息终端。主要硬件模块设计,包括S3C2410嵌入式系统主要模块、LCD显示模块、电池充放电保护模块。利用嵌入式系统通过USB无线网卡的扩展具备无线网络接入功能,同时在电池放电状态下无需外接电源维持3个小时稳定运行。     

54M无线网络适配器在嵌入式系统中的研究与应用

文章的目的是实现一个具有无线接入网络能力的嵌入式系统.构建了基于S3C2410处理器的嵌入式系统,简要分析了S3C2410的系统结构和工作原理,给出USB无线扩展接口硬件电路.研究USB无线网卡的软件部分的实现,包括分析网卡固件和网络配置管理程序的作用、编写基于嵌入式Linux操作系统的驱动程序.最后配置和激活无线网卡,使得嵌入式系统通过USB无线网卡的扩展具备无线网络接入功能.     

基于Linux-ARM平台的3G无线联网方案设计

本研究的目的是实现一个具有3G无线网络接入功能的嵌入式系统。系统的硬件平台是基于ARM系列的S3C2410微处理器。文章简要介绍了该系统的体系结构,给出USB主机接口硬件电路。研究基于USB接口的3G无线网卡的无线网络接入功能实现,包括研究LinuxUSB设备驱动程序、实现USBSerial设备的驱动、定制Cramfs文件系统。最后移植和配置PPP拨号程序,实现嵌入式系统通过3G无线网卡接入无线网络的功能。     

浅谈单片机的自动检测系统的设计

CPLD是一种可实现复杂逻辑编程的器件,是本文所研究系统的核心。该系统包括CPLD控制模块、串口收发模块、JTAG并口下载模块等。其检测原理为:由CPLD完成信号检测,并实现与单片机的串行。对单片机存储数据进行分析,确保其写入与读出信息相一致,对串口通讯功能进行检测。继续对单片机GPIO进行检测,判断单片机的整体运行效率。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.