模2n数乘运算的差分性质研究

模2n数乘运算y=cx mod 2n是一个常用的密码算法编码环节,在许多密码算法中有广泛的应用,如Sosemanuk, RC6, MARS等。当常数c取奇数时,该运算环节是一个具有很强的非线性性质和良好实现效率的非线性置换。目前没有公开文献对此环节进行差分分析。该文对y=cx mod 2n(c是任意固定的正整数)的差分性质进行了研究,给出了差分转移概率为1时,输入差、输出差及常数c的结构,并给出计数公式。然后该文给出了其进位计数之间的递归关系,基于这种递归关系给出了计算该运算的差分转移概率的平均复杂度为O(n)的算法。     

大数模乘硬件设计与FPGA高速实现

在公钥密码体制中,都涉及到大数模乘运算,其实现效率将直接影响整个系统的响应速度。将大数模乘运算用专用集成电路快速而又低成本地实现,将有助于电子商务的快速推广。该文针对应用很广的RSA公钥密码算法,提出了一种高基(2H进制)的大数模乘硬件实现方法。这种设计方法通过合理增加部分硬件开销,动态构造并行加法并配用初始化存储数据表提高模乘运算的时空效率。作者已成功地在Altera公司的Stratix-epls10f780c6芯片上实现512比特大数乘法运算,仅需437.5ns,是目前公开文献上FPGA实现速度的10倍左右。     

基于分段线性映射与代数运算 的混沌密码算法

在本文提出的新的分组密码系统中,通过迭代一个混沌分段线性映射得到的十进制序列的数字位按照算法1构造了一个双射函数g(·);通过比较两个混沌分段线性映射产生的十进制序列的对应项得到64n比特噪声向量.经过群上的三种运算(异或运算、模乘运算和模加运算)与由双射函数确定的置换运算交替作用(共8轮)在64n比特的明文上得到64n比特密文.最后,从理论和仿真实验两个方面对算法的性能进行了分析.     

一种基于CSA加法器的Montgomery模幂乘硬件实现算法

提出了一种改进的Montgomery模乘和模幂算法,该算法采用5-to-2 CSA加法器来实现Montgomery模乘算法中的超长大数加法。目前使用CSA加法器的其他模乘算法在模乘结果输出时均需要用CPA加法器来处理CSA加法器的输出结果,而本文提出的算法使得模乘运算的输入输出操作数均可采用保留进位形式,避免了进行超长操作数的CPA加法这一耗时的操作,因此显著减少了模乘运算所需时钟周期,提高了数据处理的时间效率,并加快了RSA模幂运算的速度。     

公钥密码处理芯片的设计与实现

以RSA算法为例,探讨了公钥密码处理芯片的设计与实现.首先提出了公钥密码芯片实现中的核心问题,即大整数模幂运算算法和大整数模乘运算算法的实现;然后针对RSA算法,提出了Montgomery模乘算法的CIOS方法的一种新的快速硬件并行实现方法,其中采用了加法与乘法并行运算以及多级流水线技术以提高性能,较大地减少了乘法运算时间,提高了模乘器的性能.     

面向双线性对的Fp~2-FIOS模乘算法及其实现架构研究

针对双线性对运算效率低的问题,提出了一种面向双线性对的二次扩域细集成操作数扫描(F_p~2-FIOS)模乘算法。该算法通过优化二次扩域下(AB+CD)mod P的运算过程,有效降低了模乘中的模约减次数;设计了满足不同应用需求的2种硬件架构及其调度方式以提升算法的计算效率;采用TSMC 55 nm工艺实现了双线性对运算单元。与现有文献相比,所设计的架构在一次模乘时间、时钟频率和面积时间积等性能指标上优于同类模乘设计,在整体Optimal ate对运算实现上也有一定的优势。     

数字签名中大整数运算的DSP实现算法设计

利用DSP的特点,对大整数的表示进行了全新的定义,由此设计了大整数的基本运算算法－无符号数加法、无符号数减法、无符号数乘法、模P运算、无符号数比较大小、W＝（X－Y）mod P的算法、模指数运算W＝（X^A)mod P七种运算算法,为用DSP实现数字签名打下了基础。     

关于“用安全质数p、q的乘积M作模”的RSA公开密钥密码体制的分析

引言由安全质数p、q的乘积M作模的RSA体制是指采用如下加密和脱密方法的一种公开密钥密码体制。设有一个给定的数组(M,c,d,n),其中M是两个很大的安全质数p、q的乘积,并且M的这种p、q分解是被保密的;c是与φ(M)互质的公开加密指数[其中φ(M)=LCM(p—1,q—l)];d是对应的非公开脱密指数;n是用户号。发方对一个明文信息x(x是明文经数字化后的一个小段),作变换y=X~c mod M即得到密文信息y,并将它通过公开信道传送。当收方获得一个密文信息y后,便可利用仅由收方所掌握的非公开脱密指数d,作相应的变换     

SM2高速双域 Montgomery 模乘的硬件设计

作为由国家密码管理局公布的SM2椭圆曲线公钥密码算法的核心运算,模乘的实现好坏直接决定着整个密码芯片性能的优劣．Montgomery模乘算法是目前最高效也是应用最为广泛的一种模乘算法．本文基于Mont-gomery模乘算法,设计了一种高速,且支持双域（GF（p）素数域和GF（2m ）二进制域）的Montgomery模乘器．提出了新的实现结构,以及一种新型的W allace树乘法单元．通过对模块合理的安排和复用,本设计极大的缩小了时间消耗与硬件需求,节省了大量的资源．实现256位双域模乘仅需0．34μs ．     

大整数模运算的软件实现方案

本文给出了一种基于Montgomery改进算法,以及变长滑动窗口算法的大整数模指数运算的软件实现方案,从加快模乘法运算速度和减少模乘法的运算次数两方面入手,快速、有效地解决了诸多密码算法中的大整数模乘运算问题。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.