PMD补偿系统中啁啾光纤光栅的啁啾系数和有效折射率的选择

啁啾光纤光栅是用于偏振模色散补偿的重要光无源器件。本文对基于两个啁啾光纤光栅的偏振模色散补偿系统进行了分析。重点分析了啁啾光纤光栅的一阶啁啾系数c1和两个光栅之间的有效折射率差△n变化对系统补偿特性的影响，并进行了数值仿真。     

偏振模色散和时延抖动对啁啾光纤光栅色散补偿特性的影响

对存在偏振模色散(PMD)和群时延(GD)抖动的非理想线性啁啾光纤光栅的色散补偿特性进行了研究。实验测量了啁啾光纤光栅的群时延谱和偏振模色散光谱，理论分析和实验测量表明，啁啾光纤光栅差分群时延(DGD)抖动与其时延抖动密切相关。通过数值模拟方法，计算了线性啁啾光纤光栅偏振模色散眼图代价与入射到啁啾光纤光栅色散补偿器的光信号的偏振方向的关系，计算结果表明在使用啁啾光纤光栅色散补偿器时应对光信号的偏振方向进行调整，以获得最佳补偿效果。另外结合实验数据，模拟计算并讨论了非理想线性啁啾光纤光栅群时延抖动和偏振模色散引起的信号的展宽和脉冲形状的劣化。     

光纤光栅偏振模色散研究

对光纤光栅的偏振模色散特性进行了深入的研究，特别是啁啾光纤光栅色散补偿器的偏振模色散。研究表明啁啾光纤光栅色散补偿器的偏振模色散主要由光栅的双折射系数、色散量决定，提出了制作低偏振模色散的色散补偿器的方法。     

啁啾光纤光栅偏振模色散的研究

对啁啾光纤光栅的偏振模色散模型进行了研究，并实验观察了均匀光纤光栅由于弯曲而引起反射波长的移动，由此对弯曲的啁啾光纤光栅产生的偏振模色散进行了估算，结果表明，啁啾光纤光栅由于弯曲而产生的偏振模色散群时延差可以忽略不计。     

啁啾光纤光栅补偿光纤色散的研究

啁啾光纤光栅被认为是目前最有实用价值的色散补偿方案之一。分析了啁啾光纤光栅补偿色散的基本原理,从简单模型出发分析了啁啾光纤光栅的色散补偿能力,用数值法研究了啁啾光纤光栅的时延及色散特性,并比较了变迹型与非变迹型啁啾光纤光栅。结果表明要获得较大的色散,要求光纤光栅有较长的长度和较小的啁啾。同时为了消除色散曲线的振荡还必须采取适当的变迹方法。     

啁啾光纤光栅对色散和PMD同时进行补偿的研究

提出了一种基于啁啾光纤光栅的能同时对色散和偏振模色散进行补偿的系统，并进行了分析。重点分析了一阶啁啾系统c1和二阶啁啾系数c2的取值范围对系统补偿特性的影响，并进行了数值仿真。     

偏振模色散的光域补偿方法研究

针对光纤传输中的偏振模色散(PMD)问题,研究和比较了现有PMD的光域补偿方法.利用等效啁啾技术,提出了一种基于啁啾光纤光栅的光域补偿方案,用具有光敏性质的保偏光纤制成啁啾光纤光栅,将其作为PMD补偿器中的时延线,实现了PMD的自适应反馈补偿.实验结果显示,该方案能有效补偿光纤传输中的PMD问题,提高光信号的传输质量.     

色散补偿技术在广东电网光传输网中的应用

根据光纤色散的产生机理,论述了解决色散限制的方法,结合色散补偿技术在广东电网省级光通信传输网中的实现应用,对色散补偿光纤和啁啾光纤光栅两种线性色散补偿技术的优缺点进行了比较.通过现网验证,建议在广东电网省级光通信传输网络中推广应用啁啾光纤光栅色散补偿技术.     

非啁啾光纤光栅在色散补偿中的应用

本文基于均匀布拉格光纤光栅的色散特性和啁啾高斯脉冲的传输演变特性,研究了工作于传输方式的非啁啾光纤光栅的色散补偿性能,讨论了光栅长度,光栅耦合系数等光栅参数以及初始脉宽,初始啁啾等脉冲参量对补偿光纤长度的影响。     

基于啁啾光纤光栅色散补偿问题的思考

色散已成为光纤长距离、高速率通信中的巨大障碍.鉴于色散补偿光纤插入损耗大、易引入非线性效应等缺点,文章采用啁啾光纤光栅对系统进行色散补偿,克服了以上不足.通过分析啁啾光纤光栅色散补偿的原理,结合理论分析,提出在多通道波分复用系统中使用啁啾光纤光栅,以实现长距离无中继传输.     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.