一种有效计算有耗分层媒质中格林函数的方法

以两层平面分层媒质为例,讨论了不同情况下空域格林函数的计算方法,指出了有耗平面分层媒质情况下传统方法的缺点,提出采用二维离散复像法(2D-DCIM)处理有耗平面分层媒质中的格林函数,并对积分路径做了相关要求,得到了同时包含场点纵坐标z和源点纵坐标z′及场源点横向距离ρ的格林函数的空域闭式表达式。所得结果与数值积分法的结果吻合良好,证实了该文方法的正确性。     

微带结构Sommerfeld 积分奇异性分析和表面波极点有效提取

提取表面波的DCIM能够准确计算无耗分层媒质中的空域格林函数。然而,多层媒质表面波极点的提取比较困难,并且此方法没有考虑侧面波在远区的作用。本文基于复变函数理论,严格分析了Sommerfeld积分极点和支点奇异性对远场的影响;将PSO(particle swarm optimization)与Newton-Raphson算法相结合,提出一种快速精确定位表面波极点的方法,并将其应用到提取表面波的三级DCIM,实现了分层媒质空域格林函数的准确计算。通过单层无耗介质和四层有耗介质微带结构空域格林函数的计算实例,证明了该方法的正确性和有效性。     

近地水平接地天线的数值分析

用矩量法（MoM）结合离散复镜像理论（DCIM）研究了有耗地面上方水平接地天线的性能以及天线之间的互耦。由离散复镜像理论得到了分层媒质中空域磁矢位格林函数和电标位格林函数的闭合表达式，避免了直接作索末菲积分。讨论了对接地点的处理方法，提出以集中加载的接地电阻来描述接地点地网特性，并在天线末端附加一个电流项，此外无须再寻求任何关于末端电流的终端条件。提出采用分段辛普森数值积分方法来计算检验源和展开源重合时的阻抗矩阵元素，最后给出了部分计算结果，并与文献数据进行了对比。     

有耗媒质半空间上的垂直线天线

有耗媒质半空间上线天线辐射问题通常归结为求解含有索末菲积分的广义电场积分方程来处理。因此准确、有效地计算索末菲积分是研究上述问题的关键。针对近场区的索末菲积分的计算问题,文中引入一种基于二级离散复镜像理论的改进的广义函数束方法;对于远场区的索末菲积分,利用远场首项近似公式对其进行计算。数值结果表明文中方法具有运算精度高、速度快、适用频带宽的特点。     

平面分层媒质空域Green函数快速计算(Ⅰ)

格林函数法是电磁场数值分析中的一种基本方法,平面分层媒质的空域格林函数通常表达成Sommer-feld积分形式。文中针对该问题快速求解的几种基本方法进行了系统分析,对各种分析方法进行了分类,根据研究进展情况,概述了传统离散复镜像法(DCIM)、二阶DCIM、增强型DCIM(EDCIM)、柱面波逼近和支割线积分以及其他方法,阐明了各种方法的优缺点;对计算得到的闭式Green函数在具体电磁散射与辐射计算中产生的误差控制、定阶、维数、媒质有耗问题进行了分析,给出了一种简便的有耗媒质DICM方法,数值计算结果显示文中方法的正确性。     

平面分层媒质空域Green 函数快速计算

格林函数法是电磁场数值分析中的一种基本方法,平面分层媒质的空域格林函数通常表达成Sommer-feld积分形式。文中针对该问题快速求解的几种基本方法进行了系统分析,对各种分析方法进行了分类,根据研究进展情况,概述了传统离散复镜像法(DCIM)、二阶DCIM、增强型DCIM(EDCIM)、柱面波逼近和支割线积分以及其他方法,阐明了各种方法的优缺点;对计算得到的闭式Green函数在具体电磁散射与辐射计算中产生的误差控制、定阶、维数、媒质有耗问题进行了分析,给出了一种简便的有耗媒质DCIM方法,数值计算结果显示文中方法的正确性。     

近地垂直对数周期天线的性能分析

采用混合位电场积分方程结合矩量法分析近地垂直对数周期天线,运用微波网络理论处理馈源问题,分别利用二级离散复镜像法和一种快速方法计算近、远场的Sommerfeld积分,较好地解决了分层媒质中电磁辐射与散射问题中的棘手问题,其方法简练,理论完备,结果与有关文献吻合良好,证实了该方法的正确性和通用性。     

一种计算有耗媒质中跨界目标电磁散射的高效算法

为了克服传统离散复镜像法计算有耗媒质中索莫菲尔德积分的不足,提出了一种基于增强离散复镜像法的插值算法。当场点和源点位于分界面两侧时,谱域格林函数中同时包含场点和源点位置坐标,传统二级离散复镜像法无法一次拟合复指数参数,考虑将谱域核函数对场点坐标分离,然后建立复镜像参数随源点坐标的一维插值表,从而可以对复镜像参数进行插值运算;当场点和源点均位于有耗媒质中时,二级离散复镜像法的采样路径会带来错误,提出对谱域核函数进行形式变换再进行求解,从而使插值法适合有耗媒质中格林函数的计算;为了扩大传统二级离散复镜像法的横向计算距离,在对复镜像参数进行复指数级数拟合时,选择增强离散复镜像法的采样路径。该方法同传统对格林函数进行插值的方法相比,在计算复杂度降低的同时,效率和精度都获得了大大提高。     

近地半菱形天线地波场强的计算

针对平面镜像法不能准确计算近地复杂线天线地波场强的问题,提出将平面分层媒质的格林函数法和前苏联学者Fock地波留数级数计算模型相结合,并以近地半菱形天线为例来进行计算.首先,推导了半空间并矢格林函数的空域形式,并采用加强离散复镜像法对表达式中Sommerfeld积分进行计算验证,之后采用矩量法求解半菱形天线的电流;其次,给出了偶极子在球形表面的Fock留数级数波场模型,并把模式方程变换为微分方程进行求解,考虑到大气的指数型模型,采用等效地球半径对偶极子地波场进行计算并同ITU-R推荐的指数型地波计算软件GRWAVE的计算结果进行对比验证.最后,推导了地球表面任意方向偶极子的地波场计算表达式,并根据求取的半菱形天线电流对地波场进行计算.提供了一种近地复杂线天线地波场的求解思路.     

三维导体介质复合结构电磁辐射与散射的MLFMA分析

利用多层快速多极子方法(MLFMA)分析三维导体介质复合结构的电磁辐射与散射特性.根据等效原理,介质表面构造Poggio-Miller-Chang-Harrington-Wu(PMCHW)方程,导体表面建立电场积分方程(EFIE).分析了含介质目标MLFMA算法中远区组矩阵矢量相乘运算以及有耗媒质空间中格林函数的平面波展开.利用该方法研究了涂敷目标电磁散射特性以及天线罩对直线阵天线辐射特性的影响.MLFMA的应用降低了计算量和存储量,实现了对电大尺寸目标快速、准确的求解.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.