KGD技术发展及其应用

裸芯片在HIC和MCM应用领域有着广泛的市场，其质量和可靠性保证一直受关注。本文论述了已知好芯片（KGD）保证的技术要求、方法、发展现状、国内KGD技术发展机遇与挑战，介绍了国内KGD可靠性保障技术研究情况及已形成裸芯片测试、老化筛选和评价技术的能力。     

星载高可靠裸芯片设计*

通过研究裸芯片的可靠性保证技术,提出了集成的已知良好芯片(KGD鄄确优裸片)的可靠性保证指南,并制定了完善的裸芯片设计、生产、过程控制和可靠性评估等技术流程。文章确定了KGD 的规范线,作为裸芯片可靠性测试的检验标准。根据KGD 规范线对裸芯片进行全频测试,并进行3MHz 老化试验。通过试验,可以确保KGD 的可靠性指标达到IC 封装的要求,最终实现使用裸芯片的星载电子装备小型化、轻量化、高可靠、多功能和低成本。     

国内第一条KGD可靠性保障试验、生产线在信息产业部电子五所建成

信息产业部电子第五研究所通过对国外技术的引进、消化和提升,在国内建立了第一条裸芯片测试、老化筛选和评价的KGD(Known Good Die)可靠性保障试验和生产线。     

裸芯片老化技术评价

老化可以筛选出裸芯片的潜在缺陷并因此改善产品的外在质量与可靠性.同时,老化也是非常耗时与耗费人力的.如果对产品的可靠性水平要求较低,要想低成本获得已知良好芯片(KGD),一般是不采用老化程序,但如果想获得高可靠KGD,一定程度的老化是必不可少的.本文将介绍老化的三种通用方法并进行了比较分析.     

KGD技术发展与挑战

军用和民用电子系统中模块化和小型化发展的迫切需求使裸芯片在国内有着广泛的用途和市场，尤其是在军用HIC和MCM应用领域，裸芯片质量和可靠性保证一直是人们关注的热点，本文论述了国外KGD技术发展现状，以及国内发展KGD技术面临的机遇与挑战，论述了已知良好芯片（KGD）保证的主要技术要求，重点介绍了KGD夹具技术和工艺流程，为国内KGD技术的发展提供了技术指导。     

功率裸芯片的质量与可靠性保证方法

论述了常规裸芯片质量与可靠性保证的标准和技术,针对功率器件裸芯片,提出了高性能和高可靠性设计、制造工艺保障、验证筛选等质量与可靠性保证方法和技术途径;讨论了采用临时封装夹具技术,对功率裸芯片进行热敏参数筛选、结温控制老化筛选、高温高压反偏筛选等,最终实现对功率裸芯片100%的筛选,满足MCM和HIC对功率裸芯片的质量与可靠性要求。     

确好芯片商业化的关键问题

基于老化筛选技术的确好芯片KGD是现行多芯片封装结构中的关键芯片,具有封装成本低、可靠性高、体积小、易封装集成等优点,其应用前景广泛,如多芯片组件、多芯片封装、系统封装、功率系统封装、微系统封装、堆叠封装、混合集成电路等。文章对KGD技术做了分类总结,综述了近几年KGD技术的研发进展,指出KGD进一步发展的商业化关键问题。     

裸芯片封装技术的发展与挑战

随着IC制造技术的发展,传统的封装形式已经不能够满足集成电路对于高性能、高集成度、高可靠性的要求。裸芯片由于其本身具有的特点而被广泛应用于HIC/MCM等新型的封装形式中。文章的目的在于分析使用裸芯片所带来的技术优势和存在的一些不足之处,使得人们能够更加客观地看待一种新的技术,并且扬长避短地利用好它。一方面裸芯片的引入能够提高系统集成度和速度,这是裸芯片应用技术发展的必然性;另一方面针对裸芯片应用技术存在的问题,文章着重介绍了两种解决方法,即通过发展KGD技术和改进工艺的方法来提高裸芯片的质量和可靠性。     

功率裸芯片的测试与老化筛选技术

由于存在高温度、大电流等问题,传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片.介绍了采用临时封装夹具来测试与老化筛选功率裸芯片的技术,并根据功率裸芯片的实际情况,阐述了测试与筛选功率裸芯片的方法.     

裸芯片的IDDQ测试筛选方法研究

IDDQ测试在裸芯片的测试筛选中非常有用，为了获得更高质量与可靠性的产品，许多公司在CMOS生产线中引入了IDDQ测试筛选技术，现在IDDQ测试筛选技术已经作为保证芯片可靠性的重要手段。本文介绍了IDDQ测试筛选技术的重要概念以及其在保证裸芯片可靠性方面的重要作用，并对深亚微米器件中的IDDQ测试筛选方法做了重点介绍。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.