内磁屏蔽表层黑化膜劣化原因分析与工艺处理

针对彩管用内磁屏蔽在黑化处理过程中出现的黑化膜劣化现象,通过分析与试验明确了其产生的原因并采取了有效的对策.着重述叙了清洗质量对黑化膜质量的影响.     

内磁屏蔽表层黑化膜劣化原因的分析与对策

本文针对彩管用内磁屏蔽在黑化处理过程中出现的黑化膜劣化现象，通过分析试验明确了其产生的原因并采取了有效的对策。着重述叙了清洗质量对黑化膜质量的影响。     

CRT用殷钢荫罩黑化技术研究

本文叙述了我们对ＣＲＴ用殷钢荫罩黑化技术的研究，它是利用链式黑化炉，在ＤＸ气体的氛围中进行实验，做出了殷钢荫黑化膜厚度随黑化时间、黑化膜 度随黑化温度、黑化膜厚度随ＣＯ含量、黑化膜厚度随Ｏ２含量变化的四条曲线并对黑化后的荫罩进行了金相分析和制管实验。通过对该技术的研究，我们较好地完成了殷钢荫罩的黑化工艺。     

框架黑化炉工艺技术开发及应用

本文从黑化机理分析入手，结合黑化炉设备特点，从设备、环境、来料等几个方面分析了影响黑化膜质量的各种因素，成功开发出了独具特色的黑化工艺，并且解决了在黑化炉设备调试中一直存在框架翘曲变形的问题     

彩管生产中黑化膜发红、脱落的研究

介绍了在彩色显像管生产中，荫罩黑化反应的原理，并由此分析黑化膜发红、脱落时的对策。     

彩管生产中黑化膜发红脱落的对策

本文详细介绍了彩色显像管生产中，荫罩黑化反应的原理，并由此分析黑化膜发红、脱落时的对策。     

荫罩黑化膜生成机理

ＣＲＴ制造中，荫罩黑化膜的质量是非常关键的本文就ＡＫ荫罩用材的ＤＸ气体中的黑化，结合实际生产情况进行了分析，就影响黑化膜的质量因素及其控制方法进行讨论。     

荫罩黑化因素导致低玻膜脱落原因分析与对策

本文主要讲述了彩管用荫罩在黑化处理过程中，黑化膜质发生劣化造成低玻膜脱落的原因。     

无支架荫罩双层黑化工艺研发

本文主要介绍了一种新的荫罩黑化方法，去掉了以前使用的荫罩黑化支架，直接将2枚荫罩摞放在一起，然后放置在黑化炉网带上进入黑化炉进行黑化。此外，本文还论述了荫罩实现无支架双层黑化以后带来的荫罩黑化膜厚度偏薄问题的解决方法。     

利用煤气在线分析优化锅炉燃烧控制

本文描述了利用在激光线煤气热值分析仪,分析高炉煤气成分,计算煤气热值,通过串级控制系统达到消除燃料量控制存在的较大惯性,优化锅炉燃烧控制的目的。实践证明本系统在锅炉燃料控制方面是可行的,具有调节燃烧稳定、经济和响应负荷变化等特点,系统运行稳定可靠,故障点查找方便,便于调度管理,节能降耗显著,带来了可观的经济效益和社会效益。     

Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applications

Our interest is the integration of carbon nanotubes (CNT) in electronic devices (IC, NEMS). In the scope of this work, we present a study on the preparation of the catalyst Ni particles from ultrathin films and the synthesis of carbon nanotubes by the chemical vapour deposition method. For the preparation, we use a cold-wall CVD reactor especially designed for handling samples up to a size of a 4” wafer. We show the influence of different process conditions like temperature, initial layer thickness of catalyst and substrate on particle formation characterized by scanning electron microscopy (SEM). We show that the optimization of process conditions in the catalyst preparation phase is constitutive for dense CNT films. Regarding the application of CNTs as electrical interconnects, we studied the arrangement of nanoparticles on Al and TiN supporting layer. Furthermore, we fabricated the first test structures for the selective growth of CNTs out of contact holes on a Cu/TiN metallization layer system.The growth of multi-walled nanotubes (MWNTs) was performed with thermal CVD with ethylene as a precursor gas and hydrogen as supporting gas mixed in a nitrogen gas flow. The effects of growth condition on the quality and morphology of the CNTs were characterized by scanning electron microscopy, transmission electron microscopy (TEM) and Raman spectroscopy. The influence of temperature, gas composition and substrate on CNT growth will be presented. We managed to grow dense CNTs even at temperatures as low as 500 °C.     

Failure analysis on reflector blackening between lead frame electrodes in LEDs under WHTOL test

Blackening induced lumen decay in a QFN LED after WHTOL reliability test was reported and analyzed in this paper. A new LED blackening failure mechanism was proposed based on solid experimental results. We concluded that the failure process underwent delamination between lead frame and reflector polymer composites followed by chemical penetration, composite corrosion, silver migration, and finally caused blackening failure. Delamination and corrosive de-flash agent were the key factors for the failure mode. Besides, we also estimated the influence of the failure to the optical performance through simulation. Apart from other reported factors, this study highlighted that both composite corrosion and Ag migration could generate serious illumination decrease as well. The outcome of this study is valuable for LED manufacture and quality control in the future.     

低功率刻蚀工艺均匀度研究

在二氧化硅刻蚀工艺中,有时为了控制氧化膜的损伤,需要采用低功率刻蚀工艺。文中研究了在低射频功率条件下,通过改变磁场强度、暖机条件及反应气体的组成,对刻蚀均匀度的影响。实验结果表明,在低功率条件下,改变磁场强度和暖机条件对刻蚀均匀度的改变有限,但当向主刻蚀气体中加入氧气后,能较大程度地改变刻蚀均匀度。     

浪涌保护器原理分析

对浪涌保护器的作用、构成、主要器件的特点进行阐述,结合实际应用的DX发射机浪涌抑制器原理进行了分析,并在实际处理故障时得以应用。     

HgCdTe外延用的CdZnTe衬底研制

阐述了ＣｄＺｎＴｅ衬底在红外焦平面阵列探测器研究中的重要性;概括了ＣｄＺｎＴｅ晶体生长的方法、原理和工艺步骤;分析了影响晶体质量（单晶面积、组分及均匀性、结晶完整性、光电特性）的因素,并提出了与质量相关的控制技术;介绍了ＣｄＺｎＴｅ衬底制备过程中,晶片处理的工艺和步骤（晶锭的定向切割、单晶划片、极性鉴别、磨抛、腐蚀）;报道了目前ＣｄＺｎＴｅ晶体的性能水平,晶片处理结果和ＣｄＺｎＴｅ的应用情况。     

高温井下可燃气体传感器选型研究

为实现钻井过程中井下可燃气体的准确检测,本文针对现有的气体检测方法进行了研究。通过研究基于红外吸收原理、热导原理、光声光谱原理、半导体电导率变化原理、催化燃烧原理和拉曼光谱原理的气体检测方法,综合对比各类方法的优缺点和适用性,并根据钻井过程中的实际情况要求,最终选择了催化燃烧式可燃气体传感器作为钻井过程中井下可燃气体检测的传感器。理论分析表明此类传感器可以实现井下高温可燃气体的检测。     

保护气体对接头形貌及熔滴过渡的影响与模拟

为了研究保护气体流量对复合焊接接头形貌及熔滴过渡的影响，采用5mm厚的高强钢板材进行了激光电弧复合焊接试验的理论分析和实验验证，获得了不同气流量下的焊缝形貌以及焊接过程中电弧和熔滴图像。结果表明，随着保护气体流量的增大，焊接熔深先增大后减小；当保护气体流量在25L/min，焊接熔深达到最大；且焊缝的铺展性较好，飞溅较少；保护气体流量通过影响熔滴过渡的形式，对熔滴过渡频率产生影响；随着气流量的增大，熔滴过渡频率减小，且在25L/min时，熔滴过渡频率较稳定；采用FLUENT软件对气流量进行数值模拟，气流量越大，保护气体流速越大，在工件表面的作用面积减小。该研究结果为实际工程应用中选择保护气体流量制备高质量的焊缝奠定了基础。     

A detailed investigation of the D-X center and other trap levels in GaAs-AlxGa1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy

We have re-examined the results and analysis of capacitance transient spectroscopy measurements made on modulation-doped heterostructures suitable for the fabrication of field-effect transistors. It is seen that conventional analysis of data can lead to erroneous results and a new model, which includes the contribution of the capacitance at the heterointerface, is presented. Most of the observed anomalous behavior related to trap emission can now be explained. Six main electron traps are present in single-layer AlxGa1-xAs, grown by molecular-beam epitaxy, and in device-quality GaAs-AlxGa1-xmodulation-doped heterostructures. These range in energy from 0.40 to 0.91 eV in thermal ionization energy. The well known D-X center in Si-doped AlxGal-xAs layers is composed of two closely spaced levels, DX1 and DX2, with ionization energies of 0.48 and 0.52 eV, respectively. At very low Si,doping levels, only DX2 is dominant, but at doping levels > 10¹⁸cm^-3, both DX1 and DX2 become comparable in concentration. The optical ionization properties of these levels were also measured and it is seen that the optical lineshapes differ markedly for the two centers. The peak photoionization cross sections occur at spectral energies of 1.25 and 1.38 eV for DX1 and DX2, respectively. The nature and symmetry of the centers have been studied by measurements on layers of different orientations.     

瞬态C-V法测量AlGaAs:Si中DX中心的电离能(英文)

The thermal ionization energy ET of DX centers in AlxGa1-xAs and its dependence with the value of x and the pressure are very important for estab- lishing the model of DX centers. The conventional DLTS and Hall methods used to DX center measurement have some ambiguities in theoretical analysis and experiments and the values of ET determined are different with those methods. The new constant temperature transient C-V measurement is based on the fact that at low temperature both electron capture and emission rates of DX centers are very slow. During the transient C-V measurement, change; of bias voltages and capacitance measurements are completed in a time duration much shorter than the electron capture and emission time constants, therefore the electrons occupied on the DX centers are considered to be frozen. The density of DX centers, the distribution profile of electrons on DX centers in the depletion region of a Schottky diode at a constant reverse bias, and the density of free electrons in conduction band in the bulk and their temperature dependence have been measured.     

Local thickness and composition analysis of TEM lamellae in the FIB

High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB–SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and discuss its application to the failure analysis of semiconductor devices. The local thickness in different device regions is accurately measured based on the X-ray emission excited by the electron beam in the FIB–SEM. Examples using this method to guide FIB–SEM preparation of high quality lamellae and to characterise redeposition are shown for Si and III–V semiconductor devices.