一种基于区域最大值的LED显示屏亮度特征数据提取方法

LED显示屏亮度信息的采集是屏幕显示质量评估的前提,现有的亮度分析仪采集方法不仅速度慢而且对采集到的数据评估不准确,缺乏说服力.利用CCD图像传感器采集到的图像,不仅信息量大而且事实性好.分析了LED显示屏感光图像的特征,由LED亮度特征数据与感光单元灰度值之间的关系,提出了基于区域最大值的LED显示屏目标亮度数据提取算法.该方法利用数字图像处理技术,基于最大类间方差的阈值设置法分离出目标与背景,通过确定目标区域最大值坐标,并结合灰度模板卷积算法实现了对目标亮度的快速准确提取.实践证明该方法较已有的LED显示屏亮度特征数据提取算法有了一定的改善.     

基于HVS的LED显示屏亮度均匀性评估方法

针对全彩LED显示屏的特点,提出了一种基于人眼视觉特性(HVS)的评价显示屏亮度均匀性的新方法,并通过实验进行了验证。该方法通过CCD图像传感器获取LED图像,并将图像划分成尺寸相等的子区域,计算出各子区域基于HVS的亮度特征因子、纹理细节特征因子和空间位置特征因子,用3个因子的特征融合作为每一区域的评估参数,用全屏各区域参数的离散程度值作为均匀性评价指标,客观准确地给出评估分析结果。实验证明,该方法与人的主观评价结果基本符合,提高了显示屏亮度均匀性主观评价与客观评价的一致性。     

基于灰度直方图的LED显示屏亮度均匀性评估方法

LED显示屏作为多媒体设施的显示终端,其亮度均匀性是影响显示屏显示效果的重要因素.如何对LED显示屏亮度均匀性进行客观准确的评估,是指导其研发和生产的关键.从分析LED显示屏显示特性出发,在现有LED显示屏亮度均匀性评估方法的基础上提出了基于灰度直方图的LED显示屏亮度均匀性评估方法.该方法通过CCD图像传感器获取LED像素亮度信息,结合数字图像处理技术和统计学规律,将LED像素灰度直方图拟合成正态分布曲线,利用标准差来评估LED显示屏亮度均匀性.实验证明该方法与视觉主观评价结果相一致,可有效评估LED显示屏亮度均匀性.     

基于校正系统的LED显示屏亮度均匀性评估方法

LED显示屏均匀性,是显示屏图像质量评价中的一个重要指标。文中首先分析了现有基于亮度测量仪器的均匀性评估方法,指出该方法的不足;在LED显示屏亮度校正系统的基础上,对校正系统测量得到的亮度值进行分析处理,提出了以亮度校正系统为基础的LED显示屏亮度均匀性评估方法。该方法能够快捷、客观、全面地得到LED显示屏亮度数据,可以有效评估LED显示屏亮度均匀性。     

一种改善LED显示屏亮度均匀性的算法

基于显示屏控制技术与校正原理,提出了一种改善LED显示屏亮度均匀性的算法.通过CCD相机采集显示屏RGB图像,用数学形态学和模板匹配法确定灯点的位置并根据发光区域的灰度值计算其相对亮度,生成每个灯点的校正参数,用脉冲宽度调制控制灯点的亮度.实验结果表明提出的算法能有效改善显示屏的亮度均匀性,提高显示屏的显示质量并延长其使用寿命.     

LED显示屏灯点定位排序法及应用

为实现对LED显示屏的亮色度校正,研究了一种可自动对LED显示屏死灯位置进行补点,并适用于图像采集过程中存在图像倾斜情况的灯点定位排序算法。首先对图像进行二值化处理,计算出所有灯点的中心坐标;然后通过极值法和二向排序法完成了图像中4角灯点的预定位;接着利用线性归类排序法对边界点进行定位排序,通过差值筛选法定位死灯并自动补点,利用边界点坐标与死灯位置理论坐标对所有直线进行归类排序,完成显示屏所有灯点的定位排序。最后介绍了LED显示屏亮度均匀性计算方法,通过亮度校正实验验证灯点定位排序结果的准确性。实验结果表明,校正前显示屏亮度均匀性为73.7%,校正后显示屏的亮度均匀性提高至98.7%。显示屏亮度均匀性已经达到人眼可接受的范围内,校正效果较好,灯点定位排序精度较高。     

LED显示屏的色度均匀性和色保真度

全彩色LED显示屏的均匀性包括亮度均匀性和色度均匀性两个方面。均匀性不好，显示屏就会出现”花斑”或”马赛克”，严重影响图像的观看效果。其中色均匀性包括均匀性和色保真度两个方面。色均匀性是指同屏各个象素、模块和模组之间显示同一种颜色时的色差：色保真度则是指显示屏上的图像与源图像或源景物之间的色重现的吻合程度。这两个问题都涉及到LED色差的原因和计量，为了提高色均匀性和色保真度，必须减少色差，为此研究了进行色修正和补偿的方法。     

LED视角亮度关系及其对显示屏亮度均匀性的影响分析

LED显示屏的均匀性有诸多因素决定,其中亮度均匀性是影响视觉效果的最主要因素。在分析亮度均匀性的过程中发现,LED管发光特性所决定的其在沿光轴方向上光强最强,沿发光面向四周光强逐渐减弱,因此,以LED管为基本像素构成的LED显示屏在法线方向上的亮度也最高,当偏离法线方向时亮度会不同程度的降低,这样由于LED管的性能参数及制造工艺等的影响使LED显示屏出现麻点、马赛克等亮度不均匀现象。本文以LED单管和单元箱体为研究对象,通过实验得出了LED视角与亮度的变化关系,深入分析了影响LED显示屏亮度均匀性的原因,并对亮度数据的采集方法以及生产过程中须注意的问题提出了相关建议。     

基于CCD图像的平板显示器像素的亮度分析

在当今以数字化为主要特征的显示领域,CCD摄像器件在光电图像信息的获取与处理中起着极其重要的作用。文章根据CCD的成像特点,阐述了数字显示的像素亮度与CCD感光像素之间的关系,建立了基于CCD图像的数字显示像素亮度、整屏显示的亮度均匀度的理论基础,以及单像素的发光形状的概念,并给出了LED显示模块相关的分析结果,表明这种基于CCD图像的数字显示像素亮度分析方法是快捷有效的。     

一种户外全彩LED显示屏亮度色度检测新方法

本文针对户外全彩LED显示屏的亮度和色度检测,提出了一种基于数字图像处理技术的检测新方法。首先对采集的LED显示屏图像进行预处理;然后通过水平与垂直投影来确定LED像素点的位置及亮度、色度的计算区域;最后记录亮度和色度不一致的LED像素点,以便进行后续校正。实验表明,该检测方法可实现对户外全彩LED显示屏亮度和色度的检测及后续的校正,大大提高LED显示屏的检测速度和显示质量。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.