C波段16W内匹配GaAs功率MESFET

Ｃ波段１６Ｗ内匹配ＧａＡｓ功率ＭＥＳＦＥＴ傅炜（南京电子器件研究所，２１００１６）１９９３年１２月２日收到ＡＣ－Ｂａｎｄ１６ＷＩｎｔｅｒｎａｌｌｙＭａｔｃｈｅｄＰｏｗｅｒＧａＡｓＭＥＳＦＥＴ￥ＦｕＷｅｉ（ＮａｎｊｉｎｇＥｌｅｃｔｒｏｎｉｃＤｅｖｉｃｅ...     

6～18GHz宽带功率放大器模块

研究了ＧａＡｓ功率ＭＥＳＦＥＴ的小信号特性、大信号特性和其宽带匹配网络。选用ＴＷＴ－２型功率器件，设计研制出了单级宽带功率放大器。在６～１８ＧＨｚ的工作频率范围内，小信号增益等于５．０±１．０ｄＢ，１ｄＢ压缩输出功率等于２５．０±０．８ｄＢｍ，输入输出驻波比小于２．５。     

6～18GHz宽带功率放大器模块

研究了ＧａＡｓ功率ＭＥＳＦＥＴ的小信号特性，大信号特性和其宽带匹配网络。选用ＴＷＴ－２型功率器件，设计研制出了单级宽带功率放大器，在６～１８ＧＨｚ的工作频率范围内，小信号增益等于５．０±１．０ｄＢ，１ｄＢ压缩输出功率等于２５．０±０．８ｄＢｍ，输入输出驻波比小于２．５。     

X波段1.5W GaAs MMIC研究

介绍了Ｘ波段１．５Ｗ ＧａＡｓ ＭＭＩＣ的设计,制作和性能测试,包括ＭＥＳＦＥＴ大信号模型的建立,电路ＣＡＤ优化,ＤＯＥ灵敏度分析及Ｔ型栅工艺研究等。微波测试结果为：在频率９．４￣１０．２ＧＨｚ下,输出功率大于３２ｄＢｍ,增益大于１０ｄＢ。     

X波段1.5WGaAsMMIC研究

介绍了Ｘ波段１．５Ｗ ＧａＡｓＭＭＩＣ的设计、制作和性能测试,包括ＭＥＳＦＥＴ大信号模型的建立、电路ＣＡＤ优化、ＤＯＥ灵敏度分析及Ｔ型栅工艺研究等。微波测试结果为： 在频率９．４～１０．２ＧＨｚ下, 输出功率大于３２ｄＢｍ , 增益大于１０ｄＢ。     

Ku波段高功率GaAs FET

报导Ｋｕ波段高功率ＧａＡｓＦＥＴ的制造技术，包括全离子注入、０．５μｍ自对准栅、高可靠欧姆接触、干法生长和刻蚀、背面通孔、内匹配和合成技术。器件由两个９．６ｍｍ栅宽的芯片组成，在１１．２～１１．７ＧＨｚ频带内，一分口增益压缩输出功率８Ｗ，增益６ｄＢ，功率附加效率２４％。     

Ku波段8W GaAs内匹配微波功率FET

Ｋｕ波段８ＷＧａＡｓ内匹配微波功率ＦＥＴ李祖华（南京电子器件研究所，２１００１６）Ｋｕ－Ｂａｎｄ８ＷＧａＡｓＩｎｔｅｒｎａｌｌｙＭａｔｃｈｅｄＭｉｃｒｏｗａｖｅＰｏｗｅｒＧａＡｓＦＥＴ￥ＬｉＺｕｈｕａ（ＮａｎｊｉｎｇＥｌｅｃｔｒｏｎｉｃＤｅｖｉｃｅｓ...     

Ka频段GaAs单片平衡混频器

报道Ｋａ频段ＧａＡｓ单片平衡混频器的设计和研究结果。用自行开发的“ＴＵＭＭＩＸＥＲ”软件进行电路设计，工艺以半绝缘ＧａＡｓ为衬底，采用ＮｂＭｏ／ＧａＡｓ接触形成肖特基势垒二极管，以ＳｉＯ２和聚酰亚胺双介质为保护膜，增强了工艺的成功率。研制成功的芯片尺寸为：２ｍｍ×３ｍｍ×０．２ｍｍ，在ｆ＝３１～３６ＧＨＺ范围内ＮＦＳＳＢ≤１０ｄＢ，最佳点ｆ＝３２．２ＧＨｚＮＦ．ＳＳＢ＝８．７ｄＢ［ｆＩＦ＝１．２ＧＨｚ］。     

在1．8GHz频率下功率密度为2．8W／mm的4H－SiCMESFET

本文论述了使用４Ｈ－ＳｉＣ衬底及外延层制作ＭＥＳＦＥＴ的方法，测得了栅长为０．７μｍ、栅宽为３３２μｍ的ＭＥＳＦＥＴ的直流、Ｓ参数和输出功率特性。当Ｖｄｓ＝２５Ｖ时，电流密度约为３００ｍＡ／ｍｍ，最大跨导在３８～４２ｍＳ／ｍｍ之间；当频率为５ＧＨｚ时，该器件的增益为９．３ｄＢ，ｆｍａｘ＝１２．９ＧＨｚ。当Ｖｄｓ＝５４Ｖ时，功率密度为２．８Ｗ／ｍｍ，功率附加效率为１２．７％。     

8～16GHzGaAs单片宽带分布放大器

报道了８～１６ＧＨｚＧａＡｓ单片宽带分布放大器的设计与制作。单级ＭＭＩＣ电路采用三个栅宽为２８０μｍ的ＧａＡｓＭＥＳＦＥＴ作为有源器件，芯片尺寸为１．１ｍｍ×１．６ｍｍ。在８～１６ＧＨｚ频率范围，用管壳封装的两级级联放大器增益Ｇ＿ａ，为１１．３±１ｄＢ，噪声系数Ｆ＿ｎ＜６ｄＢ，输出功率Ｐ＿（１ｄＢ）＞１６ｄＢｍ。     

C波段大栅宽GaAs MESFET的研制

采用高质量的 MBE材料 ,成功地制作了单胞栅宽 2 0 mm的芯片。用栅与 n+凹槽自对准和辅助侧墙工艺制作了栅长 0 .45 μm的 Ti Pt Au栅 ,欧姆接触采用 Au Ge Ni合金工艺 ,采用 PECVD Si N钝化 ,空气桥结构及芯片减薄 Via-Hole工艺。经内匹配得到了单胞芯片 3.7～ 4.2 GHz下 Po≥ 7.3W,Gp≥ 8d B,ηadd>2 5 % ;4胞合成器件 Po≥ 2 5 W,Gp>7d B,ηadd>2 5 %的良好结果。     

GaAs MESFET大信号模型参数的计算机提取

利用GaAs MESFET的小信号S参数及瞬态I—V特性的测量数据,建立了GaAsMESFET的大信号分析模型,编制计算机程序,进行了参数拟合并比较了GaAs MESFET两种非线性模型的适用范围,使用分步优化的方法拟合GaAs MESFET小信号S参数,获取了大信号模型中的线性参数,非线性参数值利用最小二乘法及直接优化法相结合的算法提取。为非线性电路、功率放大器、混频器、振荡器提取了准确的设计参数。     

A high-power GaAs MESFET with an experimentally optimized pattern

A high-power GaAs MESFET with a high packing density has been developed in order to increase the total gatewidth within limited practical device size. The gate-finger width was experimentally optimized to increase the packing density without deterioration of the power gain. The developed power MESFET is the crossover structure and has a total gatewidth of 15 mm with gate-finger width of 190 µm in a 2.2-mm-wide chip. The packing density was almost doubled, and the output powers of 25 W at 6 GHz, and 17 W at 8 GHz were obtained from the internally matched four-chip devices.     

A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing System

A 25-W 29-dB gain 5-GHz GaAs FET amplifier has been developed which can be used for a transmitter in the Microwave Landing System. By using 10-W class practical internally matched GaAs FET's hermetically sealed in ceramic packages, the four-stage amplifier has been constructed simply. The amplifier provides 30-W power output with 18.5 percent power efficiency at 17-dBm power input level. It also exhibited an exceffent AM/PM conversion of approximately 1°/dB, compared to 6°/dB for TWT amplifiers.     

S波段低功耗单片集成低噪声放大器

报道了S波段低功耗单片前置放大器的研制结果。该单片电路采用1μm×600μmGaAsE－MESFET、源反馈电感以及具有平面结构的集总参数LC匹配元件。用离子注入技术保证电路具有较好的一致世。在2．3GHz频率点测试结果如下：Ga＝80dB，NF＝2．06dB／2．0V，2．2mA；Ga＝10．5dB，NF＝2．25dB／3．0V，4．8mA。测试结果与设计目标基本一致，这一结果说明在低功耗应用选取GaAsE－MESFET作有原器件是可行的。     

A Technique for Predicting Large-Signal Performance of a GaAs MESFET

A method is described for accurately predicting the nonlinear microwave performance of GaAs MESFET devices. The method utilizes time-domain analysis and is based upon the experimentally characterized bias dependence of device-circuit model elements. Precise predictions are made of fundamental and harmonic power levels up to 6 dB of gain compression.     

1-18GHz GaAs单片集成电调衰减器

本文叙述了单片宽带GaAs MESFET电调衰减器的设计和制作.单片微波集成衰减器由3个MESFET按T型连接构成,整个芯片的尺寸为1.02×0.72mm.在1～18GHz范围内,插入损耗为2.0～2.7dB,各衰减状态下的输入和输出电压驻波比≤2.0,最大衰减量达20dB.在9GHz下的1dB插入压缩点功率为300mW.     

A low-distortion K-band GaAs power FET

A K-band low-distortion GaAs power MESFET was developed by incorporating a pulse-type channel doping profile using molecular-beam-epitaxial technology and a novel 0.3-μm T-shaped gate. The low-distortion FETs offer about 10 to 15 dBc improvement in second-harmonic distortion compared to devices fabricated on a uniformity doped active layer. Significantly larger power load-pull contours are obtained with the low-distortion devices, indicating the improved linearity of these devices. In an 8-20-GHz single-stage broad-band amplifier, up to 10 dBc improvement in harmonic performance was achieved using the low-distortion device. This low-distortion device exhibits very linear transconductance as a function of the gate bias. A typical 750-μm-gate-width device is capable of 26 dBm of output power with 6 dB of gain, and power-added efficiency in excess of 35% when measured at 18 GHz. At 25 GHz, the device is capable of 24 dBm of output power with 5 dB associated gain     

用于砷化镓功率MES FET器件的优质多层汽相外延材料的制备

本文介绍了近年来我们在氯化物汽相外延GaAs材料的新进展,其中包括提高均匀性的研究,采用脉冲掺杂进行变浓度有源层生长的研究,以及带有n~+层的外延材料用于功率GaAs MESFET器件的研究。所生长的优质多层GaAs VPE材料,用于MESFET功率器件获得良好的结果,在15GHz下输出功率≥1W,相关增益≥5dB;18GHz下,输出功率≥600mW,相关增益≥5dB。     

Noise performance of low power 0.25 micron gate ion implantedD-mode GaAs MESFET for wireless applications

We report on the noise performance of low power 0.25 μm gate ion implanted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 μm×200 μm D-mode MESFET has a f_t of 18 GHz and f_max of 33 GHz at a power level of 1 mW (power density of 5 mW/mm). The noise characteristics at 4 GHz for the D-mode MESFET are F_min=0.65 dB and G_assoc =13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications