10kV/5kW机载发射机高压电源的设计

设计了10 kV/5 kW机载发射机高压电源,详细介绍了准同步防冲调压电路、逆变谐振电路、高性能控制电路和高压变压整流器等关键电路的设计。此高压电源具有可靠、稳定、高效、功率密度高等优点。仿真波形和实验结果证明了该高压电源的优越性和实用性,能满足大中功率机载雷达发射机的要求。     

某机载雷达发射机的设计

现代雷达对于发射机体积、重量、可靠性、可维护性和效率方面都有了非常严格的要求。为了适应这样的要求,介绍了某机载雷达发射机的设计方法,重点讨论了高压电源、发射机调制器以及检控电路的设计原则,将高效率的软开关高压电源和大脉宽高重复频率的调制器应用于发射机的设计中,有效地提高了雷达发射机的整体效率,并减小了发射机的体积、重量。通过系统设计提高了电真空雷达发射机的工作可靠性。并针对如何解决体积小、重量轻情况下的电磁兼容问题,低气压条件下的高压绝缘与散热矛盾作了较详细说明。这一设计方法已经成功地运用于某机载雷达发射机的工程设计当中,并且取得了很好的应用效果。     

某机载雷达发射机的高压绝缘设计

简单介绍了某机载雷达发射机设计的一种新方法和新工艺，即对发射机中的高压电源、调制器、行波管等高压部件采用硅凝胶真空灌封的方式绝缘，使其与空气彻底隔离，从而实现发射机的小型化设计并保证发射机在低气压、潮湿、高温、低温、冲击等恶劣的环境条件下能够正常工作。     

一种两级降压收集极行波管发射机高压电源的设计方法

为提高真空管发射机的工作效率,减小发射机的体积和质量,行波管发射机常采用多级降压收集极形式,可将行波管发射机的效率从18%(约)提高到45%(约)。详细介绍了一种高效、小型化两级收集极行波管发射机高压电源的设计原理和关键技术,并通过仿真验证了设计的可行性。     

1．5kW机载雷达发射机高频高压电源

介绍了机载雷达发射机1.5kW高频高压电源的设计,分析了其工作原理,并对一些关键技术进行了论述。通过采用零电压开关多谐振变换器和提高高压电源的工作频率,使高压电源的性能得到很大的提高,该高压电源具有功率密度高、效率高、可靠性高等优点。实验结果证明了该高压电源的实用性,可以满足机载雷达发射机的要求。     

大功率速调管发射机升级设计与实现

介绍了最新研制的S 波段大功率速调管发射机的升级设计方案及关键技术。阐述了技术先进的高压电源、小型化全固态调制器和一体化高压油箱设计。升级设计方案合理解决了高压传输,发射机设备量比原设计约减少二分之一。调制器组件和高压电源组件采用模块化冗余设计,提升了发射机的可靠性。阐述了基于PXI 平台和虚拟仪器的指标自动化测试和故障智能诊断技术在发射机控制保护中的应用。实践表明:发射机升级设计使性能指标得到提升,整机体积小、效率高,安全性、智能化程度高。最后,提出了对大功率速调管发射机技术发展的一些思考。     

大功率多注速调管发射机的小型化设计

车载和大功率机载雷达对真空管发射机的体积和质量提出了严格要求,发射机的小型化很有必要。文中介绍了一种大功率多注速调管发射机的小型化设计,叙述了发射机的主要技术指标和系统组成;阐述了高功率密度高压电源、小型化固态调制器、高压一体化设计和末级组件热设计等发射机小型化关键技术。实验表明:小型化发射机达到预期设计要求。文中对该小型化发射机的实际应用情况和使用前景进行了介绍。     

空投型雷达发射机阴极高压电源设计

阴极高压电源纹波是影响发射机频谱的关键因素,针对空投型雷达强冲击、低气压、安装空间受限的应用环境,提出了一种空投型雷达发射机阴极高压电源设计方法。采用软开关谐振技术减少功率开关管损耗,以串级式倍压电路输出高压,采取有效措施减小输出高压纹波,提高了系统可靠性,并对强冲击和低气压环境有较好的适应性。该阴极高压电源小型化效果...     

某机载自卫电子干扰吊舱高压电源设计

针对强振动冲击和低温低气压的应用环境,介绍了一种机载电子干扰吊舱高压电源的设计。该高压电源采用软开关谐振技术减少功率开关管损耗,采用高效高频变压器和紧凑型高压整流倍压模块输出高压,实现了小型化和高功率密度,提高了发射机的效率和频谱质量,具有较好的应用前景。     

高效大功率速调管发射机的设计

针对大功率速调管发射机的设计,提出了具体的解决方案.着重讨论了全固态调制器和高压电源的设计方法.实测数据表明所设计的发射机的效率优于采用真空管调制器发射机的效率.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.