具有不同掺杂层厚度的荧光与磷光材料相结合的高效白色有机发光器件

实验制作一种多层白色有机发光器件(WOLED)。将 绿光磷光材料和红光磷光材料 Ir(piq)₂(acac)共掺到母体BPhen中作为绿光和红光发光层;荧光材料DPVBi作为蓝光发 光层,通过改变掺杂层的厚度,得到了高效率的白色WOLED。器件的最大电流效 率可达4.55cd/ A,14 V时亮度达8489cd/m² ;当电压从4V变化到12 V时,色坐标从(0.52,0.34)变化到(0.34, 0.26),基本处于白光区。此器件的 特点,在于其性能可以通过简单地调整掺杂层的厚度来控制。     

掺杂与非掺杂相结合制备有机发光器件

采用掺杂和非掺杂方法制备了一种多层白色有机电致发光器件.DPVBi为蓝光发光层,将红光[Ir(piq)2(acac)]磷光掺杂染料掺入到母体BAlq中作为红光发光层,荧光材料QAD以亚单层的方式插入Alq3中作为绿光发光层,通过改变亚单层的厚度,得到了高效率的有机发光器件,此器件的最大电流效率可达6.1 cd/A,最大功率效率达3.1 lm/W,最大亮度达25 300 cd/m2,当电压从4V变化到14V时,色坐标从(0.45,0.55)变化到(0.47,0.37),处于黄白光区.此器件的特点在于器件的性能可以通过简单地调整QAD的厚度进行控制,避免了使用多掺杂层工艺的复杂性.     

磷光与荧光相结合的多层白色有机发光器件

采用真空热蒸镀的方法制备了磷光与荧光相结合的 多层白色有机电致发光器件(OLED)。将绿 光磷光掺杂染料掺杂到母体CBP中作为绿光发光层;荧光材料 DCM2以亚单层的方式插入Alq₃中作为红光发光层;DPVBi为蓝光发光层。器件的结构为ITO /NPB(40nm)/DPVBi(d nm)/CBP:Ir(ppy)₃₈%(5nm)/ Alq₃(5nm)/DCM2(0.05nm)/Alq₃(45nm)/LiF(1nm)/AI(200nm)。实验中通过改变蓝光发 光层的厚度,得到了高效率的 白光OLED,器件的最大电流效率可达6.75cd/A,最大功率效率达2.67lm/W,最大亮度 达30440cd/m²。此外,当电压从4V变化到14V时色坐标从(0.59,0.39)变化到(0.35,0.38), 基本处于白光区。本文器件的特点在于其性能可以通过简单调整DPVBi的厚度,避免 了使用多掺杂层工艺的复杂性。     

高效率白色有机电致发光器件

通过引入磷光材料Ir(pPy3)作为敏化剂,制作了高效率的白色有机电致发光器件.Ir(pPy)3和荧光染料DCJTB共掺入CBP母体中.此共掺层的厚度以及浓度都影响到整个器件的效率和颜色.Alq和BCP分别用作电子传输层和激子阻挡层,NPB用作蓝光发光层和空穴传输层.器件的最大效率和亮度分别可以达到9 cd/A和12 020 cd/m2.通过调节掺杂层的厚度以及Ir(ppy)3和DCJTB的浓度,可以得到相当纯正的白光,其色坐标为(0.33,0.32),在10～19 V的范围内几乎不随驱动电压的变化而变化.     

不同荧光蓝光层厚度的OLED的制备与光电性能

采用蓝色荧光材料1p-TDPVBi结合绿色磷光材料2Ir(ppy)3掺杂到母体材料CBP作为绿光发光层,并且采用3BPhen作为电子传输层和激子阻挡层制备结构为ITO/m-MTDATA(50nm)/NPB(10nm)/p-TDPVBi(dnm)/CBP∶Ir(ppy)38%7nm/BPhen(60nm)/LiF(1nm)/Al的有机发光器件。实验结果表明:通过改变蓝光发光层p-TDPVBi的厚度,得到了高效率的有机发光器件,当p-TDPVBi厚度为5nm时,器件的电流效率和功率效率在4V时达到32.3cd/A和25.3lm/W,亮度在11V时达到31 020cd/m2。研究了p-TDPVBi厚度由3nm变化到9nm,OLED器件的电流密度-电压特性曲线、亮度-电压曲线及电流效率-电压和功率效率-电压等光电性能的变化。     

加CdS薄层的有机电致磷光白光器件性能的优化

采用CBP和MCP做主体,分别掺杂磷光铱配合物Ir(piq)2(acac)和FIrpic作为红光发光层和蓝光发光层,研究了红光发光层和蓝光发光层的位置对器件性能的影响,得出结构为ITO/2T/NPB/MCP∶Firpic/CBP/CBP∶Ir(piq)2(acac)/Bphen/CdS/LiF/Al的器件性能较好。当CdS的厚度为0.1nm,电流密度为161mA/cm2时,器件的最大效率比不加CdS的器件的最大效率提高了1.42倍。亮度也有较大提高。在电流密度为225mA/cm2(电压为17.5V)时,最大亮度为20 890cd/m2,比不加CdS的器件的最大亮度16 610cd/m2高出4 280cd/m2。     

利用Ir(ppy)_3敏化CzHQZn提高OLED的性能

用CzHQZn作为受主,利用磷光敏化的方法制备了有机电致黄光和白光器件。黄光器件采用Ir(ppy)3掺杂4,4-N,N′-=咔唑基联苯(CBP),敏化新的黄光材料CzHQZn作为发光层,当发光层厚度为18nm时器件性能最好,最大发光效率为3.26cd/A(at10V),最大发光亮度为17560cd/m2(at10V);白光器件采用多发光层结构,结合ADN的蓝光复合发光,同时加入了电子阻挡层(NPBX)和空穴阻挡层(BCP),获得的白光器件最大发光效率为2.94cd/A(at8V),最大亮度为11089cd/m2(at13V)。     

基于超薄发光层的有机发光二极管器件的研究

文章采用具有电子捕捉能力的橙红色磷光材料iridium(Ⅲ)bis(2-methyldibenzo-[f,h] quinoxaline) (acetylacetonate) (Ir(MDQ)2 (acac))作为超薄发光层应用于有机发光二极管中.通过对其厚度的优化,发现当发光层厚度为0.1 nm时,器件性能最好,最大电流效率达到了28.1 cd/A,明显优于采用掺杂发光层的器件.分析了发光材料的载流子捕捉作用对器件载流子平衡及器件电流效率的影响,发现超薄发光层结构几乎不改变器件的电学特性,不会进一步破坏器件载流子平衡,正因如此,大多数磷光材料都可以采用超薄发光层获得很高的效率.     

通过引入电子阻挡层的高效率的有机磷光白光器件

以CBP作为母体材料,绿色磷光染料Ir(ppy)3作为敏化剂,以荧光染料rubrene作为受主,制备了结构为ITO/2T-NATA(25 nm)/ NPBX (25-d nm)/ CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(d nm)/DPVBi(30 nm)/TPBi(20 nm)/Alq(10 nm)/LiF(1 nm)/Al的白光器件.在器件中,敏化剂Ir(ppy)3、荧光染料rubrene的浓度分别为5.0 wt%和0.5 wt%,发光层的厚度选择8 nm,通过调整两层NPBX的厚度来改善器件的性能,得到了比较理想的白光发射.当d的厚度为10 nm 时,器件在7 V的电压下最大电流效率达到11.2 cd/A,在17 V的电压下其最大亮度达到28 170 cd/m2,色坐标为(0.37,0.42),处于白光区.     

以iridium磷光为红绿蓝染料的白光器件研究

以磷光染料iridium (III) bis [(4,6-di-fluoropheny)-pyridinato-N,C2′] picolinate(Flrpic)掺在4.4′-bis (9-carbazolyl)-2,2′-dimethyl-biphenyl(CDBP)中作为蓝光发光层,tris (2-Phenylpyridine) iridium(Irlppy)3和bis (1-phenyl-isoquinoline) acetylacetonate iridium (III)(Ir(piq)2)(acac)共掺在4,4′-N,N′-dicarbazole-biphenyl(CBP)中作为绿光和红光发光层,制备了高效白光器件.通过控制染料的浓度和发光层的厚度调节颜色,实现白光发射.器件的最大亮度为17 V时37 100 cd/m2,最大效率为5 V时7.37 lm/W.当亮度从1 000 cd/m2 到30 000 cd/m2色坐标由(0.41,0.42) 变到(0.37,0.39).     

An organic light-emitting devices of highly efficient white phosphor using an electron/exciton blocker

Highly efficient white phosphorescent organic light-emitting devices （WOLEDs） was fabricated using an electron/exciton blocker. The device structure is ITO/2T-NATA（25 nm）/NPBX（25-dnm）/CBP：5%Ir（ppy）3：0.5%Rubrene（8 nm）/NPBX（dnm）/ DPVBi（30 nm）/TPBi（20 nm）/Alq（10nm）/LiF（1nm）/A1, in which N,N ＇ -bis- （1-naphthyl）- N,N ＇ -dipheny1-1, 1 ＇ - biphenyl-4,4 i -diamine （NPBX） functions as a hole transport layer and electron/exciton blocker, 4,4,N,N ＇ dicarbazolebiphenyl （CBP） is host, 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1 ＇ -biphenyl （DPVBi） is blue fluorescent dye, 5,6,11, 12,-tetraphenylnaphthacene （rubrene） is fluorescent dye, factris （2-phenylpyridine） iridium （Ir（ppy）3） is phosphorescent sensitizer and tris（8-hydroxyquinoline） aluminum （Alq3） is an electron transport layer. The WOLEDs have obtained white light emission by adjusting the thickness of NPBX, when the concentration of Ir（ppy）3 is 5-wt% and rubrene is 0.5-wt%, respectively, the thickness of the doped emissive layer is 8 nm, the WOLEDs show a maximum luminous efficiency is 11.2 cd/ A with d of 10 nm at 7 V and a maximum luminance of 28170 cd/m^2 at 17 V, the CIE coordinates is （0.37.0.42）, which is in white region.     

Efficient single layer RGB phosphorescent organic light-emitting diodes

We report efficient single layer red, green, and blue (RGB) phosphorescent organic light-emitting diodes (OLEDs) using a “direct hole injection into and transport on triplet dopant” strategy. In particular, red dopant tris(1-phenylisoquinoline)iridium [Ir(piq)₃], green dopant tris(2-phenylpyridine)iridium [Ir(ppy)₃], and blue dopant bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium [FIrpic] were doped into an electron transporting 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) host, respectively, to fabricate RGB single layer devices with indium tin oxide (ITO) anode and LiF/Al cathode. It is found that the maximum current efficiencies of the devices are 3.7, 34.5, and 6.8 cd/A, respectively. Moreover, by inserting a pure dopant buffer layer between the ITO anode and the emission layer, the efficiencies are improved to 4.9, 43.3, and 9.8 cd/A, respectively. It is worth noting that the current efficiency of the green simplified device was as high as 34.6 cd/A, even when the luminance was increased to 1000 cd/m² at an extremely low applied voltage of only 4.3 V. A simple accelerated aging test on the green device also shows the lifetime decay of the simplified device is better than that of a traditional multilayered one.     

Enhancing the efficiency of simplified red phosphorescent organic light emitting diodes by exciton harvesting

High efficiency red phosphorescent organic light emitting diode (PHOLED) employing co-doped green emitting molecule bis(2-phenylpyridine)(acetylacetonate)iridium(III) [Ir(ppy)₂(acac)] and red emitting molecule bis(2-methyldibenzo[f,h]quinoxaline)(acetylacetonate)iridium(III) [Ir(MDQ)₂(acac)] into 4,4′-bis(carbazol-9-yl)biphenyl (CBP) host in a simplified wide-bandgap platform is demonstrated. The green molecule is shown to function as an exciton harvester that traps carriers to form excitons that are then efficiently transferred to the Ir(MDQ)₂(acac) by triplet-to-triplet Dexter energy transfer, thereby significantly enhancing red emission. In particular, a maximum current efficiency of 37.0 cd/A and external quantum efficiency (EQE) of 24.8% have been achieved without additional out-coupling enhancements. Moreover, a low efficiency roll-off with the EQE remaining as high as 20.8% at a high luminance of 5000 cd/m² is observed.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

异质结堆叠发光层红色磷光有机发光二极管

本文采用主客体交错结构的发光层,即发光层是 由多组主体材料CBP和客体材料Ir(piq)₂(acac)异质结堆叠构成的。为了改善器件的性能 ,分别优化 了单主体层和单客体层的厚度。研 究表明,单主体层厚度为3~4 nm,单客体层厚度为0.3 nm时,器件能够获得的最大电流效率为3.92 cd/A,色纯度 和发光稳 定性俱佳,1mA工作电流下的CIE色坐标为(0.669,0.308),当工作电流从0.1 mA变化 到1mA,色度坐标的变化值(Δ(x,y)) 仅为(0.004,0.002)。所采用的 主客体交错发光层的制备方法,工艺简单,且因为能分别调整主客体层的厚度而改善因客体 分子聚集或因长程偶极子间相互作用对发光效率的影响,为非掺杂磷光有机发光二极管的制 备提供了思路。     

Highly efficient pure white phosphorescent organic light-emitting diodes using a deep blue phosphorescent emitting material

A high efficiency pure white phosphorescent organic light-emitting diode was developed by combining a deep blue emitting phosphorescent dopant material with red/green phosphorescent emitting materials. A simple stack structure of blue/red:green was used and tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium was used as a deep blue emitting phosphorescent dopant. A pure white emission with a color coordinate of (0.29, 0.31) and a very high current efficiency of 28 cd/A was obtained after managing the device architecture of the all phosphorescent white devices.     

Organic Light-Emitting Diodes Fabricated by a Solution Process and Their Stress Tolerance

Polymeric organic light-emitting diodes (PLEDs) were fabricated by solution process, and their stress tolerance were studied by continually pressing the PLEDs fabricated on polymeric substrates. Two types of host materials, poly(nvinylcarbazole) (PVCz) and starburst small-molecule 1,3,5tris[4-(diphenylamino)phenyl] benzene (TDAPB) were employed as host for the PLEDs doped with phosphorescent materials. Two iridium complexes are employed as dopants, fac-tris(2-phenyl- pyridine) iridium [Ir(ppy) ₃] and tris(1-phenylisoquinoline) iridium (III) [Ir(piq)₃] for green-emitting and red-emitting phosphorescent materials, respectively. The external quantum efficiency and power efficiency were 8.2% and 17.3 lm/W, and 6.3% and 3.0 lm/W for a device with Ir(ppy)₃ doped TDAPB and Ir(piq)₃ doped PVCz-TDAPB mixture host, respectively. Pushing tolerance tests were performed for PLEDs fabricated on polymeric substrates. The device continued to emit light after a pushing test consisting of more than 20 000 steps. In this paper, we discuss the fabrication and characteristics of PLEDs prepared using starburst TDAPB and phosphorescent materials for green and red emissive materials by a solution process. We discuss the pushing tolerance for PLEDs fabricated on a polymeric substrate     

(t-bt)2Ir(acac)超薄层厚度对有机电致发光器件性能的影响

以新型铱配合物黄光磷光染料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)[(tbt)2Ir(acac)]为超薄层,制备了结构为indium tin oxide(ITO)/N,N'-bis(naphthalen-1-yl)-N...     

m‐Indolocarbazole Derivative as a Universal Host Material for RGB and White Phosphorescent OLEDs

The host materials designed for highly efficient white phosphorescent organic light‐emitting diodes (PhOLEDs) with power efficiency (PE) >50 lm W^‐1 and low efficiency roll‐off are very rare. In this work, three new indolocarbazole‐based materials (ICDP, 4ICPPy, and 4ICDPy) are presented composed of 6,7‐dimethylindolo[3,2‐a]carbazole and phenyl or 4‐pyridyl group for hosting blue, green, and red phosphors. Among this three host materials, 4ICDPy‐based devices reveal the best electroluminescent performance with maximum external quantum efficiencies (EQEs) of 22.1%, 27.0%, and 25.3% for blue (FIrpic), green (fac‐Ir(ppy)₃), and red ((piq)₂Ir(acac)) PhOLEDs. A two‐color and single‐emitting‐layer white organic light‐emitting diode hosted by 4ICDPy with FIrpic and Ir(pq)₃ as dopants achieves high EQE of 20.3% and PE of 50.9 lm W^?1 with good color stability; this performance is among the best for a single‐emitting‐layer white PhOLEDs. All 4ICDPy‐based devices show low efficiency roll‐off probably due to the excellent balanced carrier transport arisen from the bipolar character of 4ICDPy.