认知无线电中的频谱接入技术

认知无线电是一种基于软件无线电的智能通信系统,它能够认知周围环境,并能通过一定的方法相应地改变某些工作参数来实时地适应环境,从而达到提高频谱利用率、缓解频谱资源紧张的目的.授权频段的频谱利用问题是认知无线电实现的关键技术之一.研究了授权频段的两种频谱利用方法:动态频谱接入和基于动态频谱接入模型之一的机会频谱接入.     

认知无线电研究综述

认知无线电是一种智能频谱共享技术。它通过感知频谱环境、智能学习并实时调整其传输参数,实现频谱的再利用,可显著地提高频谱的利用率,特别是可让未授权用户使用授权用户的频谱。本文在概述了认知无线电技术的发展之后,重点介绍了认知无线电技术及其应用的研究现状,包括认知无线电的总体概念、相关频谱政策和标准化工作进展、相关关键技术和安全技术的研究,以及它在UWB、Mesh、WRAN中的应用现状。最后对认知无线电技术的发展进行了展望。     

认知无线电技术的国内外发展和研究现状

认知无线电是一种智能频谱共享技术.它通过感知频谱环境、智能学习并实时调整其传输参数,实现频谱的再利用,可显著地提高频谱的利用率.在概述了认知无线电基本概念和功能的演进之后,重点介绍了认知无线电技术在国内外的发展和研究现状,包括相关频谱政策和标准化工作进展,以及物理层技术、媒体接入控制协议和网络路由协议等热点问题的研究成果.     

从软件无线电到认知无线电的无线通信发展现状

本文归纳了从软件无线电到认知无线电功能的演进。认知无线电又是在软件无线电的基础上提出的智能化的无线通信技术,它着力解决频谱资源的有效利用问题：认知无线电概念的提出将对现行的频谱管理体制提出挑战,并给无线通信带来新的发展空间。在此基础上探讨了认知无线电技术未来发展值得关注的热点问题。     

认知无线电的发展与应用

频谱资源的有效利用成为无线通信的一个重要问题和制约无线通信发展的新瓶颈.认知无线电(Cognitive Radio, CR)技术进一步扩展了软件无线电(SDR)的功能,成为解决频谱资源匮乏问题的有效方法.基于认知无线电在无线通信中的重要作用,介绍了认知无线电的概念,总结了认知无线电的基本特征,分析了传统无线电、软件无线电和认知无线电三者之间的关系,概述了认知无线电在民用和军用领域的应用情况,讨论了认知无线电涉及的关键技术,指出了开展认知无线电技术研究的重要意义.     

基于认知无线电的无线通信研究现状

归纳了从软件无线电到认知无线电功能的演进。认知无线电是在软件无线电的基础上提出的智能化的无线通信技术,它着力解决频谱资源的有效利用问题;认知无线电概念的提出将对现行的频谱管理体制提出挑战,并给无线通信带来新的发展空间。软件无线电在其系统硬件无需变更的情况下,可以在不同的时候根据需要通过软件加载来完成不同的功能。认知无线电可以感知周围电磁环境,通过无线电知识描述语言（RKRL）与通信网络进行智能交流,并实时调整传输参数,以达到无论何时何地都能达到通信系统的高可靠性和频谱利用的高效性。文中在此基础上探讨了认知无线电技术未来发展值得关注的热点问题。     

认知无线电技术及其在短波通信选频中的应用

随着科学技术的不断发展,在我们的生活和工作中,出现了越来越多的无线电设备,而无线电设备的正常运行需要依赖于无线电技术,但是随着当前无线电设备的不断增多,频谱资源就变得越来越稀缺,许多短波通信往往都受到了频谱资源的限制,从而影响了无线电设备功能的正常发挥和短波通信的正常发展.而当前科研人员对认知无线电进行了研究,就目前的情况而言,认知无线电技术是解决短波通信中无线频谱资源缺乏的一个有效手段.因此本文就认知无线电技术以及它在短波通信选频中的具体应用进行了一定的分析.     

认知无线电与未来动态电磁频谱管理设想

当前静态的电磁频谱管理模式已经无法适应无线通信技术的飞速发展．频谱管理模式亟待变革。认知无线电技术可以感知周围无线频谱环境．并且通过实时改变操作参数以更好地利用有限的频谱资源。这种思想给未来的频谱管理带来了希望．基于认知无线电技术的频谱管理模式已成为频谱管理部门的研究热点。本文基于认知无线电技术对未来的频谱管理模式提出了一些设想．供相关部门和研究人员参考。     

认知无线通信系统的频谱资源管理

作为认知无线电（CR）技术核心问题的无线频谱资源管理技术是提高认知无线电性能的关键。通过引入资源空间的概念对认知无线电技术领域中的无线频谱资源管理技术进行说明,形成了无线频谱资源空间、资源网格、可用资源图谱等无线资源管理的数据体系,并且构建了相应的分层分布式管理结构和资源管理数据库。形成的资源描述体系和管理结构可以成为研究认知无线电资源管理技术的理论概念基础和借鉴支持。     

认知无线电关键技术及应用简

频谱资源成为无线通信的一个重要问题和制约无线通信发展的新瓶颈.认知无线电(Cognitive Radio,CR)技术成为解决频谱资源匮乏问题的有效方法.本文基于认知无线电在无线通信中的重要作用,介绍了认知无线电的概念,总结了认知无线电的关键技术,概述了认知无线电的应用情况,研究了主管部门在认知无线电下的频谱管理工作.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.