配网自动化的规划设计与分析

随着经济发展和人民生活水平的提高,对供电质量和可靠性也提出了更高的要求。大规模的两网改造结束以后,配电网的布局得到了优化,但要进一步提高配电网的可靠性,还必须全面实现高水平的配电自动化。因此,为提高县级地区供电可靠率和配电网自动化、智能化水平,积极稳妥地推进配电自动化规划建设工作,在总结以往经验的基础上,必须做好地区配电自动化规划工作。     

基于故障指示器的配电自动化系统故障研判

随着城乡居民生活水平不断提高,对电力系统的电能质量要求也随之提升,这就对配电网的供电质量及可靠性提出了更高的要求.借鉴于故障指示器安装布点灵活,投资费用少的特点,本文介绍了将具备通信功能的故障指示器[1]接入配电自动化系统,通过配电自动化系统故障研判功能,实现配电网故障快速定位,抢修和供电恢复的技术方案,并根据在泉州地区的应用情况提出存在问题及相关建议.     

新型配电自动化主站系统架构的研究

配电自动化是提高供电可靠性、供电质量和供电能力,实现配电网高效经济运行的重要手段。当前,建设新型的面向智能电网的配电自动化系统是配网自动化的发展方向,而配电自动化主站是配电自动化系统的核心组成部分。本文就是从配电自动化主站的层次和架构方面对新型配电自动化主站进行简要的论述。     

关于自动化技术在配网设计中的应用

配电自动化系统作为配电网建设的重要组成部分,不仅能提高电网供电的安全性、可靠性和经济性,改进和优化电能质量,极大程度为用户提供优质服务,而且还能有效的降低配电系统的运行成本,减小工作人员的工作强度。本文在阐述配电网发展现状的基础上,首先分析了自动化技术在配电网建设中的必要性,其次介绍了配电网馈线自动化技术及其常见故障处理方法,然后以CSDA配电自动化系统为例,对配电网自动化技术进行分析,最后提出加强配电网自动化技术应用的几点建议。     

国内外配电自动化现状以及发展趋势探讨

本文通过对国内外配电自动化应用现状进行调研,结合国内配电网的发展情况,探讨配电自动化的发展趋势,对于促进配电自动化合理建设,缩短故障停电时间,提高供电可靠性,减轻运维部门的工作强度,有较大的现实意义.     

配电自动化系统建设研究

作者在全球能源互联网和配电网快速发展的背景下,分析了配电自动化现状及规划发展趋势,深入研究了配电自动化主站、终端、信息通信及其他配套系统的建设方案,提出了适应地区发展需要的配电自动化建设思路,为从事配电网及配电自动化规划、设计、建设、运营等工作的人员提供了参考。     

城区配电网自动化规划分析

实施配电自动化可提高整个配电系统的供电可靠性和服务水平,产生显著的社会效益和经济效益。该文简要探讨进行配电自动化规划的一些基本思路及进行配电自动化规划的基本步骤和模式。     

配电自动化在县级供电企业中应用与探索

目前全国部分地区电力事业的发展都相对滞后于经济的发展,不能满足经济发展的迫切需要,要逐步提高我国供电服务的质量和供电可靠性,传统的配电网结构及保护、运行和管理方式已经不适应电力市场发展的需求,迫切需要新的配电模式和配电自动化及管理系统来解决这个矛盾。鉴于此,本文对配电自动化在县级供电企业中的应用进行了探索。     

关于配网自动化主站系统现状与展望

配电网是电力系统的重要组成部分,其自动化实现程度的高低直接影响到配电的可靠性与质量问题。配电网自动化是提高供电可靠性和供电质量、扩大供电能力、实现配电网高效经济运行的重要手段,也是实现智能电网的重要基础之一。配电网自动化主站系统是配电网自动化系统的核心部分,主要实现配电网数据采集与监控等基本功能以及配电网拓扑分析应用等扩展功能,并具有与其他应用信息系统进行信息交互的功能,为配电网调度指挥和生产管理提供技术支撑。本文主要介绍了配电网自动化主站系统的建设模式,阐述了配电网主站系统的现状,重点分析了配电网主站系统的发展趋势,希望对配电网的相关工作人员有所帮助。     

基于智能故障指示器的故障定位系统研究

文章面向城乡配电网,通过低廉的成本实现配电网的故障信号采集、故障区段定位,降低配电网线路的故障查找时间和查找成本,研究为供电企业提供的一套以故障定位为核心功能的配电自动化系统设计,加快供电恢复,从而提高供电可靠性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.