基于单片机的智能手机充电器的设计

随着手机技术的持续快速发展,如何对智能手机电池进行安全有效地充电,已经成为了一个重要的课题。单片机技术在工业控制领域有着广泛的应用,利用它的处理控制能力可以实现充电器的智能化。本设计主要根据手机充电器现状,在传统的手机充电器基础上,使用AT89C58单片机来实现手机锂电池充电器方面的应用,充电控制部分由MAX1898芯片完成。该充电器能够实现电池的预充、快充、定时充电、充电需时提醒、充电后自动断电、充满提醒、LED灯提示、电路安全保护、温度控制、应急发电等功能。     

通用型手机充电器完全剖析

目前市场上销售的手机充电器,从电路结构和充电方式上大体可分为两大类：第一类是“机充式”充电器,另一类是“直充式”充电器（也叫座充）。所谓“机充式”充电器,就是电源进入手机后由充电管理IC控制预充电、恒流充电、恒压充电、电池状态检测、温度监控、充电结束低泄漏、     

基于PIC16C73B的电动自行车充电器的设计

随着电动自行车的日益普及,电动自行车充电器的性能有待完善和发展。所研究的充电器为专用36 V电动自行车铅酸蓄电池智能脉冲充电器,他主要由高频开关充电电源和单片机2部分组成。整个充电过程中的5个状态预充电、快充电、补充充电、涓流充电和停充是由单片机PIC16C73B控制而自动实现转换的,并且设置了温度补偿控制,避免了电池出现过充和充电不足现象。     

基于AVR单片机的智能充电器的设计与实现

介绍了以AVR单片机为核心智能充电器的控制原理,讨论了充电器的硬件结构和软件设计思想.该充电器对充电过程进行全面管理,描述了充电检测的关键技术,实现了智能充电.并对充电电源、电压进行自动检测调整,充电后自动转为恒压浮充状态,使充电过程按理想的充电曲线进行,达到既保护电池、又能使电池充满的最佳效果等要求.这种全新的智能充电方式,有效地解决了普通充电器将蓄电池"充坏"的技术难题,大幅度提高了蓄电池的实际循环寿命,是电动自动车、电动汽车的理想产品.     

点击手机充电器

手机充电器的主要类型目前移动电话充电器主要有旅行充电器、座式充电器等。旅行充电器由于其携带方便,对于经常出外旅行的人来说比较合适,它一般是快速充电方式,充电时间为２－３小时。座式充电器一般设计成双槽,让使用者除了给手机上正在用的电池充电外,还可以再充一节电池。所以,座充一次能充两节电池。座式充电器一般是采取涓流充电方式为电池充电,充电时间较旅行充电器长２－３小时,大约为４－５小时。除了上述两种充电器外,另外还有车载充电器,可以方便用户在汽车上为手机充电。车载充电器的一端插入点烟器,另一端连接手机…     

手机电话号码簿的复制办法

１．手机充电器的类型 目前手机充电器主要有３种, 即旅行充电器、座式充电器、车载 充电器。 ２．各种充电器的特点 旅行充电器由于其携带方 便,对于经常外出的人最适合。它 采用的是快速充电方式,充电时 间为２－３ｈ。座式充电器一般设计 成双槽,让使用者除了给手机上 正用的电池充电外,还可以再充 一节电池。座式充电器采取慢充, 充电时间较旅行充电器长２－３ｈ。 而车载充电器,可以方便用户在 汽车上为手机充电,可将车载充 电器的一端插入点烟器,另一端 连接手机即可,但手机不宜在汽车中长时间充电,因为汽车中温度较高。 …     

手机充电须知

给手机充电,既可直接带机充电,又可只给电池充电;既可通过座式充电器充电,又可通过简易做行）充电器充电。那么,到底选择哪种方式,哪种充电器充电,方能达到既充满电又不影响电池及手机的寿命呢？使用简易充电器直接带机充电,虽然使用了手机内的存贮电装置,使其在充电过程中微微发热,但不会影响手机的使用寿命。换言之,直接带机充电对手机没有负面影响,但这必须在原装配置的基础上才能够保证。如果使用不相匹配的其他类型的充电器给手机直接充电,对电池和手机都会有不同程度的负面影响,严重的还会“充毁”电池和机头。就目前任…     

手机电池如何充电

一、选择兼容性好的充电器。建议消费者最好选购具有“全充”功能的充电器,均可对镍镉电池、镍氢电池和锂离子电池进行充电,且具有慢充和快充等功能。有的手机本身就带有联体的充电器,则另当别论。另外消费者应了解和掌握该充电器在充电时的注意事项,以及适用何种类型的电池。二、不可“充之过急”。每次充电时,最好选择小电流充电,因为快速充电容量最多只能达到额定容量的85%,快速充电是作为一种应急而设置的充电方法。如果经常采用快速充电,久而久之,会降低电池的容量,缩短电池的使用寿命。因此,无论用哪种类型的手机电池充电,最好不要采用快速充     

用电池监测芯片实现多功能智能充电器

文章介绍了一种基于专用电池监测芯片的多功能电动车智能充电器。通过专用电池监测芯片DS2438,对蓄电池充电过程中电压、电流、充放安时累计及温度进行自动检测,并通过单总线上传给单片机。单片机根据实时检测到的各参数值及其变化情况,自动按照不同的充电方式对电动车蓄电池进行充电控制,确保蓄电池既不欠充也不过充,从而达到提高蓄电池使用寿命的目的。     

一种基于单片机的电能收集充电器的设计与实现

本文介绍了一种电能收集充电器的设计和实现方案。该充电器可将（0-20V）直流电源的能量传递到3．6V以上的可充电电池中,实现对手机、数码相机、MP3等便携式电子产品的应急充电。它主要由供电电路、充电电路、控制电路三大模块组成,其中供电电路采用自激式Boost变换器,能在输入电压低至1V的情况下,为控制电路提供供电电压。充电电路采用它激式Boost变换器,在单片机的控制下进行电压变换和电池充电。控制电路以单片机为核心,监控显示充电电流,并向充电电路发出两路PWM控制信号。论文给出了主要硬件电路和软件的设计过程,制作并测试了实验样机。实验结果表明该充电器具有工作电压范围宽,效率高,可靠性好等优点。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.