谱分析和带限外推的新算法

付氏分析和谱估计的一个中心问题是根据信号f(t)的有限段来确定其变换:F(ω)=∫_-∞^∞f(t)e^-jωtdt(1)     

Modified sol-gel process for the preparation of BaTiO3 and PbTiO3 ferroelectric films

A modified method for preparing barium and lead titanate films is suggested, which combines precipitation from solution and elements of sol-gel processing. The ∼1-μm-thick BaTiO₃/Pt and PbTiO₃/Pt films deposited on Pt foil are transparent, show good adhesion, and have the 1 : 1 : 3 stoichiometry. The films are finegrained, with a mean grain size of 0.1–0.2 μm. The barium titanate films are characterized byt _C = 110-125°C, ε₂₀ = 167-500, tanδ₂₀ = 0.015-0.06, ε_max = 1050,P _s= 3.2 μC/cm²,E _c = 14 kV/cm, ρ = (5-7) × 10⁹ Ω cm, andV _br = 80-150 kV/cm. The lead titanate films are characterized byc/a = 1.056, ε₂₀ = 105-110, tanδ₂₀ = 0.11-0.16,P _s = 4.1 μC/cm²,E _c = 34 kV/cm, ρ = (0.8-3.0) × 10⁹ Ω cm, andV _br = 50-100 kV/cm.     

Kinetics of Reactions of Np and Pu Ions with Hydrazine Derivatives: XVIII. Reaction between Np(V) and Hydroxyethylhydrazine

The Np(V) reduction with hydroxyethylhydrazine is described by the equation −d[Np(V)]/dt = k ₁[Np(V)][HOC₂H₄N₂H ₄ ⁺ ] + k ₂[Np(V)][Np(IV][H⁺]^1.8, reflecting its main and autocatalytic pathways. The rate constants are k ₁ = 0.31±0.04 l mol⁻¹ min⁻¹ and k ₂ = 4.04±0.11 l^2.8 mol^−2.8 min⁻¹ at 80°C and ionic strength μ = 4. The activation energies are E ₁ = 90±6 and E ₂ = 116±4 kJ mol⁻¹, respectively. The autocatalytic pathway is limited by the reaction between hydroxyethyldiazenium ions, HOC₂H₄N₂H ₂ ⁺ and protonated Np(V) ions. __________ Translated from Radiokhimiya, Vol. 47, No. 2, 2005, pp. 150–153. Original Russian Text Copyright ? 2005 by V. Koltunov, Baranov, G. Koltunov.     

Kinetics of Technetium Reactions: XV. Tc(IV) Oxidation with Persulfate Ions in HClO<Subscript>4</Subscript> Solution

Tc(IV) is oxidized with persulfate ions in HClO₄ solution by reactions with both S₂O ₈ ²⁻ ion and product of its thermal decomposition, Caro acid, H₂SO⁵. The reaction rate at 35°C and solution ionic strength μ = 1 is described by the equation d[Tc(IV)]/dt = k ₁[Tc(IV)][S₂O ₈ ²⁻ ] + k ₃[Tc(IV)][HSO ₅ ⁻ ]/[H⁺], where k ₁ = 0.88±0.04 l mol⁻¹ min⁻¹ and k ₃ = 110±5 min⁻¹. With increasing ionic strength to μ = 2, both rate constants decrease (k ₁ = 0.58±0.08 l mol⁻¹ min⁻¹ and k ₃ = 52±2 min⁻¹ at 35°C). The activation energy of the overall reaction is 77.7±8.1 kJ mol⁻¹. The mechanisms of both reactions are discussed. __________ Translated from Radiokhimiya, Vol. 47, No. 2, 2005, pp. 145–149. Original Russian Text Copyright ? 2005 by V. Koltunov, Gomonova, G. Koltunov.     

复合材料中增强粒子与基体中微观应力和残余应力分析

按球对称模型对粒子增强复合材料中热膨胀差(DCTE)热应力和残余应力进行了弹-塑性分析。结果表明,热应力或残余应力具有短程分布特点;粒子内部为常水静应力,界面和基体中径向应力与粒子内部同号,切向和周向应力与径向应力符号相反。存在一个基体发生初始屈服的临界温差t_P,屈服范围随温差|t|而扩大。单程变温产生的残余应力与热应力完全相同;经过一个热循环后,若温差小于t_P则残余应力为零;若大于t_P,则在粒于和基体中产生残余应力。讨论了粒子形状和尺寸对残余应力和基体塑性变形对复合材料性能的影响。     

Finite-size and gravity effects on the thermal conductivity of4He near the λ line

This paper reviews the opportunities for microgravity and Earth-based measurements of the thermal conductivityλ(t, L) of⁴He confined in cylindrical geometries of radiusL with axial heat flow at temperatures near the bulk superfluid-transition lineT _λ (P) (t is the reduced temperatureT/T _λ −1). It provides an evaluation of existing data forL=1 μm nearT _λ at saturated vapor pressure (SVP), and uses these to derive a scaling function for the resistivityR(t, L)=1/λ(t, L). The purpose of future measurements over a wide range ofL and of the pressureP will be to test the applicability of this function. In the present paper the scaling function is used to assess quantitatively the effect of gravity on potential Earth-based measurements. It is found that the gravity effect forR is particularly severe belowT _λ . For typical three-mm-high samples at SVP, values ofL significantly larger than 8 μm can only be investigated fully in micro-gravity. At higher pressures the gravity effect is larger. At 30 bar, three-mm samples withL≳4 μm require microgravity for measurements belowT _λ (P). Modern thermometry has sufficient resolution to permit quantitative measurements in micro-gravity of the anticipated finite-size effect for values ofL as large as 50 μm.     

一种新型离子型铱配合物的合成及其光物理性能表征

以氯桥二聚体(ppy)₂Ir(μ-Cl₂)Ir(ppy)₂、4,4′-二溴-2,2′-联吡啶和六氟磷酸钠为原料合成了一种新型离子型铱配合物[Ir(ppy)₂(Br_2bpy)]⁺PF₆-,产率90%。采用元素分析、红外光谱、核磁谱以及质谱表征确认了目标产物的结构,并考察了其光物理性能。结果发现,配合物[Ir(ppy)₂(Br_2bpy)]⁺PF₆-在630 nm处具有很强的红光发射光谱。并采用溶剂缓慢挥发法培养出[Ir(ppy)₂(Br_2bpy)]⁺PF₆-的单晶,X射线单晶衍射仪对其结构进行了表征,获得了晶体结构参数,结果表明配合物为正交晶系,P2₁₂₁₂₁空间群。     

带声学放大器的行波热声发动机声阻抗特性

通过分析带有声学放大器的行波热声发电系统中直线发电机的电-力-声类比图，发现直线发电机的最佳工作状态与行波热声发动机的输出声阻抗特性相关。采用DeltaEC软件计算带有声学放大器的行波热声发动机（以下简称系统）的输出声阻抗特性。计算结果发现，输出声阻抗虚部X_a为-1×10⁷ Pa·s·m^-3时，系统的最大输出声功率545.47 W，最大热声转换效率为7.2%；当输出声阻抗虚部X_a在-3.9×10⁶~-1×10⁷ Pa·s·m^-3之间变化，实部R_a在1.37×10⁶~2.31×10⁷ Pa·s·m^-3之间时，等效位移在1.89~6 mm之间变化，符合直线发电机的位移要求；结合输出声阻抗对压力与体积流率的相位差及系统工作频率的影响，发现声阻抗实部R_a应在1.37×10⁶~2.31×10⁷ Pa·s·m^-3之间，声阻抗虚部X_a在-7.5×10⁶~-1.0×107 Pa·s·m^-3之间时，系统具有较好的工作状态。     

不同类型的基体对0-3型压电复合材料性能的影响

制备了PZT/环氧树脂和PZT/尼龙两种0-3型压电复合材料。研究表明,以尼龙-1010为基体的复合材料的饱和极化电场E_s和时间t_s均比环氧树脂E-20为基体的复合材料低,而压电系数d₃₃却比后者高。     

Preferred orientation of AlN plates prepared by chemical vapour deposition of AlCl3 + NH3 system

Aluminium nitride (AlN) plates about 1 mm thick (maximum) were prepared by chemical vapour deposition (CVD) at the maximum deposition rate of 430 nm s⁻¹ using AlCl₃, NH₃ and H₂ gases at deposition temperatures,T _dep, of 873–1473 K. The effects of deposition conditions on the preferred orientation, morphology and micro-structure were investigated. WhenT _dep was less than 1073 K, the resulting CVD AlN plates contained some impurity chlorine and the aluminium content exceed the nitrogen content. WhenT _dep exceeded 1173 K, no chlorine was detected, and the Al/N atomic ratio matched the stoichiometric value. The lattice parameters (a=0.311 nm,c=0.4979 nm) and density (3.26×10³ kgm⁻³) were in agreement with values reported previously. The crystal planes oriented parallel to the substrates changed from (1 1 ˉ2 0) to (1 0 ˉ1 0) to (0001) with increasing total gas pressure (P _tot) and decreasingT _dep. This tendency is discussed thermodynamically and is explained by the change of supersaturation in the gas phase.     

YBa2Cu3O x superconducting thin films prepared by low temperature vacuum codeposition

Y-Ba-Cu-O films were prepared by low temperature codeposition of three components. The Y and Cu contents were evaporated from metallic sources, while Ba was vacuum-evaporated from Ba, BaO and BaF₂ sources in separate codeposition experiments. The lowest temperature at which superconducting YBa₂Cu₃O _x thin films (about 0.5μm thick) preparedin situ was near 500°C. This process enables preparation of superconducting films on various substrates (SrTiO₃, MgO, Al₂O₃, Si) without a buffer layer. Zero-resistance critical temperature was as high as 88 K and the critical current density was 10⁴ A/cm² at 4.2 K. The morphology of the films was granular with disordered grain orientation, the average grain size being typically 0.5μm.     

Photoelectrochemical investigation on spray depositedn-CdIn2S4 thin films

Polycrystalline thin films ofn-CdIn₂S₄ have been spray deposited onto amorphous and fluorinedoped tin oxide (FTO) coated glass substrates at the optimized substrate temperature of 380°C. The films were characterized by X-ray diffraction (XRD) and optical absorption studies. XRD studies revealed that the films were polycrystalline with spinel cubic structure. The optical absorption studies showed the band gap energy to be 2·14 eV. Photoelectrochemical (PEC) investigations were carried out using cell configurationn-CdIn₂S₄/1 M NaOH+1 M Na₂S+1 M S/C. Using Butler model, the optical band gap and minority carrier diffusion length (L _P) were found to be 2·22 eV and 0·07 μm, respectively. Gartner’s model was used to calculate the minority carrier diffusion length and the donor concentration (N _D) for CdIn₂S₄ films at three different wavelengths.N _D was found to be of the order of 10¹⁶ cm⁻³.     

Preparation of tetragonal zirconia powders by a solid state reaction: Kinetics, phases and morphology

Powders of tetragonal (t)ZrO₂ have been prepared by a solid state reaction between sodium metazirconate and sodium metaphosphate. The reaction temperatures and times have been varied between 450 and 550°C and 5 and 75 h, respectively. Zirconia powder, mostly in thet andt′ phases, is obtained. The yield of ZrO₂ powder increases monotonically with time at all reaction temperatures according to a phase boundary controlled kinetics. The fraction oft phase also increases with time at 450°C and 500°C but goes through a maximum at 550°C, the highest temperature employed. A maximum of 55% of the precursor monoclinic zirconia (used to prepare sodium meta zirconate) is converted tot phase at 500°C/75 h. The ZrO₂ powder consists of crystallites of size 9–25 nm agglomerated into particles having average size between 2 and 4μm. The agglomerates have a breaking strength of 100 MPa. A hydrothermal treatment is found to break the agglomerates into smaller sizes. Grinding the powder in a mortar and pestle converts only 12% of thet phase into monoclinic, indicating that substantial fraction of the tetragonal phase is the non transformable varietyt′. Heating experiments also confirm this.     

超声血流向量成像技术探讨颈动脉球部壁面剪切应力的影响因素

目的：运用超声血流向量成像(Vector Flow Imaging, V Flow)技术探讨颈动脉球部自体解剖结构及血流动力学因素对壁面剪切应力(Wall Shear Stress, WSS)的影响。方法：选取颈动脉超声检查正常患者 70例,将 V Flow感兴趣区置于颈总动脉分叉部及颈内动脉起始段。测量颈动脉球部与颈总动脉间角度(θ)、测量收缩末期颈动脉球部(Carotid Bulb, CB)膨大最明显处内径(D_CB)与颈总动脉末段内径(D_CCA)的比值(D_CB/D_CCA)、测量颈动脉球部分流量(Q_CB)与颈总动脉末段流量(Q_CCA)的比值(Q_CB/Q_CCA)、描记颈动脉球部血流紊乱区可视化面积(A_CB)以及测量颈动脉球部起始段内侧平均壁面剪切应力(WSSI-CB)和外侧平均壁面剪切应力(WSS_E-CB),并对上述各项参数进行统计学分析。结果：(1)颈动脉球部起始段 WSS_I-CB值为(0.88±0.30) Pa,外侧 WSS_E-CB值为(0.32±0.15) Pa,外侧壁明显小于内侧壁,差异有统计学意义(P<0.01)。(2)颈动脉球部与颈总动脉夹角 θ值为(24.5±12.1)°,与 WSS_E-CB相关系数为r=-0.171,二者无相关性且差异无统计学意义(P>0.05);颈动脉球部膨大最明显处内径与颈总动脉末段内径比值 D_CB/D_CCA为(0.66±0.09),与 WSS_E-CB值呈负相关,相关系数为r=-0.312,差异有统计学意义(P<0.05)。(3)颈动脉球部分流量与颈总动脉末段流量比值Q_CB/Q_CCA为(0.69±0.15),与 WSS_E-CB值呈正相关,相关系数为r=0.428,差异有统计学意义(P<0.01);颈动脉球部血流紊乱区面积 A_CB为(0.27±0.17) cm²,与 WSSE-CB值呈负相关,相关系数分别为 r=-0.545,差异有统计学意义(P< 0.01)。结论：颈动脉球部血流量、血流紊乱区面积及膨大程度是影响外侧壁面剪切应力 WSS的主要因素,而与颈动脉球部发出角度的关系并不密切。     

高锰奥氏体低温钢力学性能及Hall-Petch关系的研究

高锰奥氏体低温钢作为一种经济型低温钢材料,具有非常巨大的发展空间.为进一步研究晶粒尺寸对高锰奥氏体低温钢的影响,本文对其进行了不同工艺的固溶处理,测试了不同晶粒尺寸实验钢的室温拉伸及低温冲击性能, 通过扫描电镜(SEM)、背散射电子衍射(EBSD)等方法进行表征并计算其Hall-Petch关系式.-196 ℃冲击实验结果表明,高锰奥氏体低温钢拥有良好而稳定的超低温冲击性能,且其超低温冲击性能不随晶粒尺寸的增加而发生变化.经计算实验钢屈服强度所对应的Hall-Petch常数K_y为7.27 MPa·mm^0.5,明显小于其他被研究的奥氏体高锰钢.进一步计算拉伸过程中不同真应变ε对应的Hall-Petch常数K(ε),发现在拉伸过程中,受TWIP效应产生的变形孪晶影响,K(ε)值随应变量的增加而增加;当真应变达到0.3时,组织内变形孪晶不再继续生成,加工硬化过程不再进行,K(ε)也达到极大值.     

NO3为配体的超卤素/飙卤素的理论研究

以超卤素M(NO₃)₂-(M=Li, Na)为基元,构建了超卤素团簇Mn(NO₃)n+1-(M=Li, Na;n=2,3)。采用密度泛函理论研究了这些团簇的结构、垂直电离能(VDE)、 绝热电离能(ADE)等性质。M₂(NO₃)₃-由超碱金属M₂(NO₃)⁺与NO₃-结合形成,结果显示,用超碱金属取代碱金属作为团簇的中心, M₂(NO₃)₃的VDE不升反降。M₃(NO₃)₄-由金属原子与超卤素M(NO₃)₂-结合形成,碱金属是团簇中心。M₃(NO₃)₄- 的VDE大于基元,形成了飙卤素。而且通过最高占据轨道与最低非占据轨道间的能级差(HOMO-LUMO gap)的计算结果发现,随着碱金属原子数目的增加,团簇的化学稳定性越高。     

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa₂Cu₃O₇ and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa₂Cu₃O₇ films grown on bare sapphire are shown to giveT _c=90 K, critical current >10⁶ A/cm² at 77 K and surface resistance =450μΩ. Application of epitaxial metallic LaNiO₃ thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La_0·6Pb_0·4MnO₃ thin films up to 50% is highlighted.     

Insulating ZnO film on silicon for MIS application

High resistive zinc oxide thin film (∼ 0·5 μm) was deposited on single crystalp-silicon (100) wafers by an inexpensive spray-CVD method and was characterized both optically and electrically. Al/ZnO/Si (MIS) device structure was subsequently fabricated and bothI − V andC − V characteristics were studied. The semiconductor-insulator interface charge density (D _it) was calculated by Terman method and was found to be 3·85 × 10¹¹ cm⁻²eV⁻¹.     

Structure of diamond and diamond like carbon thin films grown by hot-filament chemical vapour deposition technique

Micro-crystalline diamond (MCD) and diamond like carbon (DLC) thin films were deposited on silicon (100) substrates by hot-filament CVD process using a mixture of CH₄ and H₂ gases at substrate temperature between 400–800°C. The microstructure of the films were studied by X-ray diffraction and scanning electron microscopy. The low temperature deposited films were found to have a mixture of amorphous and crystalline phases. At high temperatures (> 750°C) only crystalline diamond phase was obtained. Scanning electron micrographs showed faceted microcrystals of sizes up to 2μm with fairly uniform size distribution. The structure of DLC films was studied by spectroscopic ellipsometry technique. An estimate of the amount of carbon bonds existing insp ² andsp ³ form was obtained by a specially developed modelling technique. The typical values ofsp ³/sp ² ratio in our films are between 1·88–8·02. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Zr55Al10Ni5Cu30非晶合金晶化相转变的价电子结构分析

基于EET理论,计算了F-Zr₂(Ni,Cu)和tI-Zr₂Cu及tI-Zr₂(Cu,Ni)相的价电子结构,用最强键键合力n₁、结构单元总成键能力F和单位成键能力F_v分析了F-Zr₂Ni亚稳相向tI-Zr₂Cu型稳定相的转变过程。研究发现:F-Zr₂Ni的n^{F-Zr₂Ni₁值比tI-Zr₂Cu的ntI-Zr₂Cu₁值大115.36%,FF-Zr₂Ni_v值比tI-Zr₂Cu的FtI-Zr₂Cu_v值大34.03%;F-Zr₂(Ni0.3,Cu0.7)的nF-Zr₂(Ni0.3,Cu0.7)₁值比tI-Zr₂Cu的ntI-Zr₂Cu₁值大0.36%,FF-Zr₂(Ni0.3,Cu0.7)_v值比tI-Zr₂Cu的FF-Zr₂Ni}_v值大1.25%; tI-Zr₂(Cu0.6,Ni0.4)的n^{tI-Zr₂(Cu0.6,Ni0.4)₁值比F-Zr₂(Ni0.3,Cu0.7)的nF-Zr₂(Ni0.3,Cu0.7)}₁值大12.95%, F^{tI-Zr₂(Cu0.6,Ni0.4)_v值比F-Zr₂(Ni0.3,Cu0.7)的FF-Zr₂(Ni0.3,Cu0.7)}_v值大14.41%; 从价电子结构角度看,F-Zr₂Ni不能直接转变为tI-Zr₂Cu,F-Zr₂(Ni,Cu)不易分解重构为tI-Zr₂Cu;F-Zr₂(Ni0.3,Cu0.7)可分解并转变为tI-Zr₂(Cu0.6,Ni0.4)。