基于可调F-P滤波器的线性波长扫描窄线宽光纤激光器

研制了一种基于可调F-P滤波器的线性波长扫描窄线宽光纤激光器。该激光器采用环形腔结构,以高增益掺Er3+光纤(Er30-4/125)作为增益介质,以保偏掺Er3+光纤(EDF08-PM)作为可饱和吸收体抑制跳模,同时结合F-P滤波器选频,获得了单频窄线宽的激光输出。通过线性调节F-P滤波器的驱动电压,实现了对激光器波长的线性扫描。在两只975nm单模激光器的双向泵浦下,实验中测得激光器阈值为15mW,最大输出功率为24.3mW,3dB线宽约为5.2kHz。当F-P滤波器在6.1~10.2V的线性电压驱动下,激光器波长的线性扫描范围为1 542.404~1 558.836nm。     

基于Mach-Zehnder滤波的可调谐光纤激光器

() ()基金项目: 。摘要:为了实现高稳定性的可调谐激光输出,提出并设计了一种基于Mach-Zehnder(M-Z)滤波结构,结合Fabry-Perot(F-P)滤波器的可调谐掺铒光纤激光器,并对激光器的原理及实现方案进行理论分析和实验验证。所设计激光器系统的泵浦源工作波长为976 nm;长度5 m的掺铒光纤作为增益介质;采用全光纤M-Z结构进行滤波,并结合F-P滤波器实现单波长激光可调谐输出。实验中,通过调节F-P滤波器,在泵浦功率为60 mW时,实现了1547～1568 nm范围内单波长激光的稳定可调谐输出,波长调谐间隔小于1.7 nm,每个输出波长的边模抑制比均大于55 dB,线宽均小于0.1 nm。     

基于SOA和F-P环形滤波器的双波长激光器

提出了基于半导体光放大器(SOA)和掺铒法布里-波罗(F-P)环形滤波器的双波长激光器结构。该激光器以半导体光放大器为增益介质,利用其自发辐射起振,激光器中的多模光纤布喇格光栅、法布里-波罗环形滤波器和线型谐振腔都有选频作用。其中,光栅的布喇格波长决定了振荡波长,使激光器产生两个波长的激光输出,线型谐振腔自身的梳状滤波作用和F-P环形滤波器抑制激光器的多余纵模,使得输出激光具有窄线宽特性,得到了线宽为0.05nm双波长振荡。     

采用F-P光纤环滤波器的窄线宽环形腔光纤激光器

提出了一种采用F-P光纤环滤波器的窄线宽环形腔激光器,该激光器采用环形腔结构,两个耦合比为30:70的耦合器和一段2 m长的未泵浦掺铒光纤构成F-P光纤环滤波器,F-P光纤环滤波器产生的梳状谱,可以增大激光模式之间的自由光谱范围（FSR）,在一定程度上减小跳模现象的发生,有利于模式的稳定。研究表明,通过对掺铒光纤的优化和耦合器的选择可以提高F-P光纤环滤波器的精细度,而F-P光纤环中的未泵浦掺铒光纤起到饱和吸收体的作用,使输出激光的线宽得到有效压缩。将保偏光纤光栅和F-P光纤环滤波器共同应用于环形腔掺铒光纤激光器,在室温下得到了3 dB线宽均小于0.07 nm（实验室光谱仪最小分辨率）的窄线宽双波长输出。在2 h的观测时间内,最大峰值功率波动小于0.4 dB,具有良好的稳定性。     

基于F-P干涉技术的通信波段可调谐激光器

根据F-P干涉原理设计制作了楔型F-P滤波器,使用这种滤波器进行可调谐掺铒光纤激光器实验,980nmLD泵浦功率为25mW时获得了稳定的单纵模激光输出,输出功率约0．6mW,线宽低于0．06nm,在34．2nm波长调谐范围内功率变化不超过0．5dB,边模抑制比大于35dB。     

窄线宽光纤激光器

为满足传感系统的需求,研制了1 550nm单频窄线宽光纤激光器,采用环形腔结构,利用976nm激光器作为泵浦源,高掺杂掺铒光纤作为增益介质,以低掺杂掺铒光纤作为饱和吸收体,得到稳定的窄线宽激光输出。泵浦功率为200mW时,得到输出功率为21mW,线宽为7.2kHz,波长稳定度为1.26pm,相对强度噪声≤-102dB/Hz1/2。     

基于级联多模布拉格光栅和高精细度滤波器的可调谐双波长窄线宽掺铒光纤激光器

提出了一个基于级联多模布拉格光栅和新型的高精细度滤波器的可调谐双波长窄线宽掺铒光纤激光器的结构。环形滤波器由两个耦合器和一段经过泵浦的掺铒光纤组成,由于掺铒光纤产生增益,滤波器产生高精细度的频率响应,能够滤掉掺铒光纤激光器的不需要的纵模,从而起到窄化激光器线宽的作用。实验过程中,由多模光栅的选频特性产生六种窄线宽双波长的组合,激光器的线宽由不加滤波器的0.14~0.16 nm 被压窄窄化到0.05 nm。     

基于掺铒光纤环形滤波器和多模光纤光栅的双波长激光器

提出了基于掺铒光纤环形滤波器和多模光纤光栅的双波长激光器。在单波长光纤激光器的基础上,增加了多模光纤布拉格光栅(MM-FBG)和高精细度的光纤滤波器。其中多模光纤布拉格光栅作为激光器的波长选择元件,可产生两个波长的激光输出。高精细度的光纤滤波器由两个光耦合器和一段弱泵浦的掺铒光纤构成,掺铒光纤产生的增益和光纤时延使滤波器具有高精细度的梳状谱响应,从而抑制了激光器产生的不需要模式,保证了输出的激光具有窄线宽特性。以980 nm的激光二极管(LD)作为泵源,得到了线宽为0.07 nm或0.08 nm的双波长输出,表明滤波器具有良好的滤波效果。     

未抽运掺杂光纤在掺Yb~(3+)窄线宽光纤激光器中的作用

采用一种新的连接方式使一段掺Yb3 + 光纤处于未抽运位置。以这段掺Yb3 + 光纤作为对信号光的吸收体 ,利用它在驻波场中的可饱和吸收作用 ,再结合带通滤波器 ,在掺Yb光纤激光器中获得了波长 10 5 4 5 6nm ,3dB带宽小于 0 0 7nm的窄线宽激光输出。对未抽运掺杂光纤吸收体在掺Yb3+ 窄线宽光纤激光器中的作用进行了较为详细的研究     

一种超窄线宽双向反馈的多波长布里渊光纤激光器

提出一种超窄线宽双向反馈的多波长布里渊光纤激光器。一个2×2的3 dB耦合器连接10 km的普通的单模光纤(SMF)作为布里渊增益环,分布反馈式半导体激光器作为布里渊抽运源,两个光环行器实现多波长激光的输出和反馈,没有加入掺铒光纤线性增益结构。当布里渊功率为80 mW时,在10 km单模光纤中产生受激布里渊散射效应,而获得反向传输的多阶斯托克斯光。不包括抽运光,共观察到12个波长的斯托克斯光输出,波长间隔为0.088 nm,输出激光线宽达300 kHz。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.