一种基于HP EESOF软件的IMPATT二极管非线性电路模型参数的提取方法

通过对雪崩二极管非线性电路模型参数数学表达式的分析，利用HPEESOF软件进行电路模型的计算机模拟，计算出雪崩管在非线性状态下的器件阻抗，从而为雪崩管振荡器的设计提供了重要的理论依据。     

3mm波段集成振荡器研究

描述了一种3mm波段集成振荡器,该振荡器由雪崩二极管、微带谐振器、阻抗匹配器、鳍线过渡组成.通过对3mm波段集成振荡器进行理论分析和实验研究,最终在国内首次采用3mm连续波雪崩二极管成功研制出微带集成振荡器,工作频率为94.78GHz,输出功率大于7mW.     

基于基片集成波导谐振器的压控振荡器设计

设计了一种基于基片集成波导谐振器的X波段压控振荡器。首先分析了串联反馈式振荡器以及基片集成波导谐振器的理论,然后在高频电磁仿真软件ADS中进行仿真和设计,并通过将变容管合理地引入谐振器,实现了电调谐的目的。最终设计完成了一个工作于X波段的基片集成波导压控振荡器。此压控振荡器与传统的介质压控振荡器(DRO)相比,具有稳定性高、平面化以及成本低的优点。由于采用了ADS中的联合仿真功能进行振荡器的设计,仿真结果的准确性得到了提高,减小了实物的调试工作量。测试结果为:工作频率为7 GHz,调谐范围为30 MHz,输出功率≥7 dBm,谐波抑制度≥22 dBc,相位噪声优于-106 dBc/Hz@100 kHz。     

集成在介质谐振器上的耿氏振荡器

集成在介质谐振器上的耿氏振荡器《ＭｉｃｒｏｗａｖｅＪｏｕｒｎａｌ））１９９４年（第３７卷）第２期报道了由介质部分填充的柱形腔在５．５ＧＨＺ时脉冲功率为３Ｗ的耿氏振荡器。以往的耿氏或雪崩振荡器是把Ｍ极管设计在腔体中，并由腔体控制振荡频率。为了减小尺寸，...     

砷化镓雪崩振荡器偏置振荡和稳定分析

一引言 1958年里德提出了雪崩二极管振荡器的理论,到1965年Johnston、Brand和Lowe分别在硅、砷化镓和锗的二极管中实现了微波振荡,至今这十多年来,从理论到器件的制造都发展到了相当完善的程度。目前雪崩二极管振荡器已成为很重要的微波功率源。从C波段一直到毫米波段都已经有产品,有些产品输出功率达到几瓦,实验室的水平就更高一些,比如砷化镓雪崩管在8千兆赫下输出大于8瓦,效率高达35％。在研制大功率、高效率砷化镓雪崩管振荡器中,人们发现了砷化镓雪崩二极管的偏     

3mm稳频脉冲雪崩管振荡器设计

介绍一种3mm波脉冲雪崩管振荡器,采用顶部斜率可调的脉冲电流给雪崩管(IMPATT Diode)供电,应用高Q腔谐振稳频,具有振荡频率高,输出功率大,频率稳定性好等优点.     

X波段介质振荡器的设计与仿真

主要介绍了介质振荡器的设计理论,以及使用Agilent公司的ADS仿真软件进行X波段介质振荡器的设计和仿真。在设计过程中使用NEC公司的MESFET管NE71084作为振荡器的有源器件,利用介质谐振器实现了输出信号的稳频与反馈。给出仿真结果和输出信号相位噪声与功率的实际测试结果。测试结果表明,该方法可以有效地指导介质振荡器的设计过程,提高设计效率。     

功率MOS器件在不同温度条件下雪崩特性研究

本文使用实验和二维器件模拟仿真方法研究了高压功率MOS器件在不同温度条件下的耐雪崩能力。实验研究了国产功率MOS器件在最大额定工作温度范围(-55℃～150℃)发生的雪崩能量烧毁行为。采用包含电热非等温模型的ISE TCAD二维仿真软件模拟分析器件发生雪崩失效的机理。无嵌位电感实验数据及模拟结果证明,由于器件内部寄生效应及热效应影响,功率MOS器件雪崩耐量可靠性随着温度升高而退化,其主要原因与雪崩过程引起器件内部寄生双极管开启相关。     

集成宽带压控振荡器的设计

介绍了S波段、C波段集成宽带压控振荡器的设计方法和设计思路,进行了理论分析和数学模拟。通过利用Ansoft公司的Serenade8.5软件进行仿真、优化设计,获得了较好性能的宽带振荡器。给出了2-4GHz、4-8GHz宽带VCO最终达到的技术指标。     

基于ADS的200MHz振荡器设计与仿真

本文主要介绍基于负阻原理的振荡器设计,利用Agilent公司的ADS（Advanced Design System）仿真软件对200MHz振荡器进行了设计,同时阐述该方法设计压控振荡器的一些要点,包括静态偏置点、输出负载与匹配网络。论文最后给出了振荡器的仿真结果。本文所应用的方法有利于学生理解振荡器原理,帮助学生熟悉专业仿真软件,因此可作为振荡器设计的教学参考。     

Silicon high-resistivity-substrate millimeter-wave technology

The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated on 10 000 Ω.cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic-hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.     

Noise in IMPATT oscillator at large r.f. amplitudes

The noise-current generator of a large-signal IMPATT oscillator is shown to be inversely proportional to the avalanche starting current. This is verified by a numerical study of a large-signal model of an IMPATT oscillator.     

Highly Stable, Low Noise Millimeter-Wave IMPATT Oscillator (Technical Notes)

A highly stable and low noise IMPATT oscillator at 75 GHz is realized by using the parametric injection locking technique along with an AFC circuit in which a crystal oscillator is used as a reference. Noise level of this oscillator is lower by 25 dB compared with that of the free-running IMPATT oscillator, and the frequency stability is as good as 10/sup -8/ /spl deg/C.     

MIC IMPATT diode oscillator stabilised by temperature compensated dielectric resonator

Barium nonatitanate resonators offer simple microwave circuit designs for stabilised oscillators. An integrated circuit X-band IMPATT diode oscillator was designed and results are presented for both the stabilised and unstabilised oscillator. There was a considerable improvement in the stabilised oscillator spectrum and temperature sensitivity, e.g. the unstabilised oscillator had a line width of 0.5 MHz at 38 dB below the peak whereas the stabilised oscillator had a 0.5 MHz linewidth at 52 dB below the peak. The temperature sensitivity of the stabilised oscillator was ~40 kHz/°C over the range 0 to 60°C, which was about a third of that of the unstabilised oscillator.     

Highly Stable, Low Noise Millimeter-Wave IMPATT Oscillator (Technical Notes)l

A highly stable and low noise IMPATT oscillator at 75 GHz is realized by using the parametric injection locking technique along with an AFC circuit in which a crystal oscillator is used as a reference. Noise level of this oscillator is lower by 25 dB as compared with that of the free-running IMPATT oscillator and the frequency stability is as good as 10/sup -8/ / /spl deg/C.     

A New Microwave Amplifier for Multichannel FM Signals Using a Synchronized Oscillator

Because of the excellent results of the noise-loading test on an IMPATT oscillator that is phase-locked to an external FM driving signal, a new microwave amplifier for multichannel FM signals using a synchronized oscillator is proposed. An IMPATT oscillator, injection-synchronized with an FM signal, is regarded as an amplifier and its noise characteristics for multichannel signals are evaluated with the noise-loading method as recommended by the International Radio Consultative Committee. The results show that when this oscillator satisfies the noise characteristics for 960 telephone message channels, it assures a gain of approximately 15 dB at 11 GHz, and in this sense, this oscillator can be regarded as an amplifier for multimessage channels. The degradation of SNR of this amplifier is less than 2 dB. This excellent result is obtained because of the following. In the video band, the modulation suppression of an FM driving signal in the injection-synchronized oscillator, such as the IMPATT, is very small, while the oscillator noise, which dominates the entire output characteristic, is considerably reduced by the synchronizing action of the oscillator. This amplification continues up to the high-frequency range in which this principle of operation applies.     

A 40-GHz Digital Distribution Radio with a Single Oscillator

New 40-GHs band digital radio equipment is described. In the equipment we adopted a new circuit configuration consisting of a single IMPATT diode oscillator which functions as both transmitter frequency converter and receiver load oscillator simultaneously. The principal system design factors, a unique IMPATT diode oscillator mount configuration and test results are described. The compact radio equipment is designed so that it ensures excellent cost performance for communication systems in local trunk service, even in short hop applications resulting from rainfall attenuation to the new band.