基于半导体器件的仿真系统显示驱动电路的研究

为了提高基于半导体器件的红外动态景像仿真系统的工作效率,根据仿真系统的工作特点设计了一种驱动电路.首先简述红外动态景像仿真系统的技术要求,其次给出基于半导体器件的动态红外仿真系统的工作原理,最后通过分析半导体器件的特点给出系统显示驱动电路的设计及时序图,并指出使用该驱动电路可使系统具有低功耗、高占空比、无闪烁和良好的均匀性等优点.     

动态红外图像生成技术综述

利用半实物仿真系统能在实验室内对红外戍像仪,导弹寻的器及各种红外探测系统的动态性能进行测试和评估,其核心技术是动态红外图像生成.介绍了动态红外图像生成的各种方法,包括电阻阵列、二极管阵列、基于激光束扫描的图像生成技术、薄膜转换器、基于光纤阵列的红外图像转换技术、红外CRT、可变形反射镜阵列、液晶光阀、基于MEMS技术的空间光调制器和基于LCOS的红外空间光调制器等.对这些技术进行了详细的描述,包括基本原理、关键技术及发展概况,并讨论了其相对的优缺点.最后,对各种方法的性能参数进行比较和对照.     

红外景像模拟器

介绍了红外成像制导半实物仿真系统中红外景像模拟器的组成和工作原理，对其关键技术动态红外景像生成技术进行了综述，并分析了几种应用较多和极具潜力的动态红外景像生成技术，如电阻阵列、液晶光阀、激光二极管阵列以及基于数字微镜器件的景像生成技术，指明了各种方法的优缺点和目前所达到的水平。最后指出了红外景像模拟器的一些性能参数，并阐述了对其性能进行评估研究的必要性。     

数字微镜阵列红外动态景象模拟器的研制

红外动态景象模拟器为红外半实物仿真系统提供动态目标和背景,是半实物仿真系统的核心技术之一.介绍了基于数字微镜阵列研制的红外动态景象模拟器的组成、工作原理和技术指标.描述了数字微镜阵列红外动态景象模拟器的4大关键技术,即红外图像转换技术,红外图像转换器的同步调制驱动技术,红外光学耦合技术和红外热像逼真度修正技术.分析了红外图像转换器同步与不同步驱动对图像采集的影响.给出了经研制的数字微镜阵列景象模拟器产生、红外热像仪获取的红外图像.实验结果表明:该模拟可广泛应用于红外成像探测系统的仿真、测试和标定.     

MOS电阻阵列红外图像转换器性能测试

红外图像转换器技术是红外成像仿真系统中的一项关键技术,它可在半实物(HWIL)仿真系统中用来对红外探测系统的实时性能进行测试和评估。基于微机械技术发展起来的MOS电阻阵列是动态红外图像转换器中的一种。介绍了MOS电阻阵列动态红外图像转换器的发展现状及美国Eglin空军基地宽波段红外场景投影器(WISP)的测试技术。结合实际应用,提出了一种基于红外显微光学镜头的MOS电阻阵列动态红外图像转换器测试方法,给出了部分图像测试结果。     

基于帕尔帖效应的红外仿真屏驱动电路

为了提高基于帕尔帖效应的红外动态景像仿真屏的工作效率,根据仿真屏的工作特点设计了一种驱动电路.首先对半导体器件的工作原理进行介绍;其次就当前驱动技术进行分析比较;然后通过对半导体器件的工作性能分析,提出了一种适合红外仿真屏的驱动电路.经过理论分析及其验证得出结论:该驱动电路下的仿真屏其显示具有高分辨率、高占空比、无闪烁、均匀性良好的优点.     

动态红外场景生成新技术

总结了目前用于半实物仿真的红外场景生成技术的新进展,介绍了几种典型的新技术,例 如:超大阵列规模的薄膜镜光调制器场景生成技术、中波红外LED 阵列红外场景生成技术、基于聚合 液晶的红外液晶光阀红外场景生成技术、一种新型的用于半实物仿真场景生成投影系统的电子束寻 址反射型空间光调制器、一种基于微型发射器的红外场景生成技术、基于MEMS 技术的单层锗化硅 红外宽波段微发射器阵列红外场景生成技术等。最后对红外场景生成技术的未来发展方向和趋势作 了分析和展望。     

红外成像半实物仿真中景像投影方式的研究

文章根据红外投影仪在动态景像生成中产生红外图像的方式,介绍了发射型、激光型 和透射型红外投影仪的应用、研究和发展趋势,并重点讨论了当前最具有发展潜力和被认为前沿的悬浮电阻阵列和激光二极管阵列。     

动态红外景象产生技术

利用红外硬件闭环仿真系统能在实验室内对红外摄像机、导弹寻的器及各种红外探测系统的实时性能进行测试和评估,而仿真系统的核心器件是动态红外景象产生器。文中概述了各种红外景象产生技术,如电阻阵列、激光二极管阵列、光调制技术等,重点介绍了发展最快且最具潜力的电阻阵列,包括其发展水平、关键技术及发展动态。为了便于比较,给出了某些重要器件的性能参数。     

基于电阻阵列的动态红外场景产生器发展现状

动态红外场景仿真技术是未来武器系统发展的关键技术之一,动态红外场景产生器是实现动态红外场景仿真的关键系统,电阻阵列是动态红外场景产生器的主要发展方向。本文介绍了电阻阵列红外场景产生器的基本结构和原理,并比较了该项技术的国内外发展现状。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.