一种新型频率固定相控波束扫描的微带漏波天线

提出了一种崭新的带移相器双端口馈电微带漏波天线。通过控制微带漏波天线末端馈电端口移相器 ,其输入电流激励相位发生变化 ,成功地实现了工作频率固定下的微带漏波天线主波束扫描。当工作频率为 7GHz时 ,微带漏波天线主波束扫描范围可以达到约 2 1°。     

新型频率固定相控波束扫描微带漏波天线的研究

提出了一种新型带移相器多端口馈电微带漏波天线,实现了频率固定下的相控微带漏波天线双向主波束扫描.通过控制微带漏波天线中部馈电端口移相器,成功实现了工作频率固定下微带漏波天线主波束扫描,并使用电子开关实现微带漏波天线主波束双向扫描.当工作频率为7GHz时,在微带漏波天线法线右侧,主波束扫描范围约为41°～63°;在微带漏波天线法线左侧,主波束扫描范围约为117°～138°.     

SIW四极化“目”字形漏波天线

为克服传统漏波天线存在的开阻带缺点,提出了斜45°“目”字形缝隙结构,分析了该结构的色散特性和辐射特性,进而设计了具有波束从后向到前向连续扫描功能的漏波天线。同时,提出了四极化形成方案,利用 3 dB 耦合器作为圆极化馈电网络,再引入90°移相器后形成线极化馈电网络。将两条“目”字形缝隙线阵与馈电网络相结合来实现四极化漏波天线。测试结果表明,该四极化天线具有较好的端口隔离度,线极化的波束扫描范围是-25°~21°,圆极化的波束扫描范围是-21°~31°。     

一种新型定频波束可调微带漏波天线的仿真研究

提出了一种新型的定频波束可调微带漏波天线.通过在微带漏波天线的辐射边缘周期性地加载微带电感,可减小微带漏波天线的相位常数,进而减小微带漏波天线的主波束方向角.微带电感是一末端短路的短微带线.应用时域有限差分法(FDTD)对这种加栽微带电感的微带漏波天线进行仿真分析得出,当频率为10.5GHz,未加载微带电感的微带漏波天线主波束方向角为53.,加载微带电感可使得微带漏波天线主波束方向角减小到11.,当减小微带电感的长度或减小微带电感间的距离时,微带漏波天线主波束方向角会减小.本文FDTD仿真结果与软件HFSS仿真结果十分吻合.     

中部开周期性缝隙的微带漏波天线及其在微带漏波天线小型化中的应用

传统的微带漏波天线在长度较短的情况下性能较差,主要表现为反向波束较大。1979年由W．Menzel首先提出的微带漏波天线长为10cm（2．23λ0）,为获得更好的性能,天线的长度要增大到4至5个波长。增大天线的长度可以改善天线的性能,但会影响到它在很多领域的应用。当微带漏波天线的中部开周期性的缝隙后,天线表面的电流分布会改变,天线的性能将随之改变。分析了周期性缝隙的各个参数对微带漏波天线主波束方向角和主波束增益的影响,以及这种方法在微带漏波天线小型化中的应用。     

4.9 GHz小型化集成相控阵天线设计

设计了一种相位控制和馈电一体化的8×8相控阵天线。将多路微带线功分器和移相器芯片集成于同一片电路板作为馈电网络并压合于阵列天线背面,形成了单端口馈电的64单元集成相控阵天线。该相控阵天线整体厚度仅2.25 mm,馈电端口至天线单元之间没有任何连接电缆,具有低剖面小型化和一体化的显著优点。电磁仿真结果显示,4.9 GHz的回波损耗小于-25 dB,最大增益为22.5 dB。此外,主极化和交叉极化隔离度为30 dB,主波束可实现-58°~62°平面扫描,具有较好的交叉极化和波束宽角域连续扫描特性,可应用于5G移动通信小型基站。     

基于FDTD的微带缝隙漏波天线分析

应用时域有限差分法(FDTD)对微带缝隙漏波天线进行分析,直观地得到了微带缝隙漏波天线内部的电场分布。提出了一条有效的经验公式,成功地计算了微带缝隙漏波天线的漏波传播系数,与实验数据吻合较好。比较了不同缝隙宽度和微带宽度对微带缝隙漏波天线性能的影响。证明了在微带漏波天线上开缝可以有效地减少天线尺寸及降低天线的工作频率。     

漏波天线中阻带的应用及抑制

周期性结构会引入阻带。有些阻带对有些漏波天线有用,如可用于抑制某些不需要的传播模。但阻带对大部分周期性漏波天线是不利的,如边射阻带使得主波束在边射方向不能连续扫描。文中讨论了周期性结构阻带在漏波天线中的应用及抑制。给出了一个阻带应用实例:微带漏波天线一般工作于EH1模,在激励其EH1模时往往会激发不希望的EH0模,在微带漏波天线上加载周期性短路过孔产生EH0模的阻带,利用该阻带可有效抑制EH0模的传播,从而使得天线反射系数降低,增益增大且平稳。文中介绍了三种方法可完全抑制周期性漏波天线边射阻带:单元非对等双辐射元、短路过孔匹配以及渐变半波长传输线。通过完全抑制边射阻带,周期性结构漏波天线的主波束可从后向通过边射连续扫描到前向,其主波束连续扫描范围得到了有效扩大。这些方法可应用于基片集成波导、微带、同轴线等平面和非平面周期性漏波天线。     

一种小型宽带双极化5G基站天线

设计了一种适用于2G/3G/4G/5G移动通信的小型宽带±45°双极化基站天线。该天线由2对偶极子辐射片、2条微带馈线和1块反射板组成,辐射臂和微带馈线采用双面印刷工艺印刷在0.8 mm厚的FR4板,并固定放置于开有圆形槽的反射板上。对天线实物进行加工测试,测试结果表明,端口1工作频段为1.82~3.60 GHz,端口2工作频段为1.64~3.41 GHz;工作频段内,反射系数小于-10 dB,端口隔离度优于18 dB;交叉极化比在视轴方向大于17 dB,±60°方向大于15 dB;半功率波束65°左右,前后比优于18 dB,测试和仿真结果较吻合。所设计天线带宽宽,尺寸小,且制作工艺简单,成本低廉,适合批量生产,应用于5G移动通信基站中。     

基于特异材料微带漏波天线辐射特性研究

分析复合左右手特异材料微带漏波天线的辐射原理,建立复合左右手材料微带漏波天线仿真模型,通过仿真计算得到微带漏波天线的辐射特性。制备与仿真参数相同的实物天线,测量天线S参数、方向图和天线各单元电容瞬态电压。最后,对仿真试验结果和实物天线测量结果比较,吻合较好。在固定工作频率下,复合左右手特异材料微带漏波天线工作在左手区时,电磁波辐射主要发生在天线结构前几个单元,且电磁波以指数形式快速衰减,工作在右手区时,电磁波沿整个天线辐射,且电磁波衰减较慢。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.