基于受激布里渊散射的调Q光纤激光器研究

为了获得窄脉宽和高功率的光纤激光脉冲,对基于受激布里渊散射的脉冲抽运调Q光纤激光器进行了实验研究.设计了布喇格光纤光栅、掺Yb3+双包层光纤和单模光纤作为线性谐振腔.采用锥形光纤连接抽运模块与掺Yb3+双包层光纤实现了光纤激光器的全光纤化结构.通过脉冲抽运方式,利用光纤中的非线性效应——背向受激布里渊散射对激光进行混合调Q,得到了纳秒量级的脉冲输出,其脉宽为400ns,平均功率2.5W,重复频率15kHz.结果表明,通过脉冲抽运方式,利用光纤中的受激布里渊散射能够有效地压缩输出脉冲的线宽,实现高功率输出.     

全光纤高功率1091nm MOPA激光器

搭建了一台基于双包层掺镱光纤的全光纤结构1091 nm主振荡功率放大(MOPA)激光器.种子源为自行搭建的线形驻波腔掺镱光纤振荡器,最大输出功率为56 mW,放大的自发辐射(ASE)抑制比大于35 dB.通过两级预放结构放大后,种子功率达到3W.主放级为一个大模场双包层掺镱光纤放大器,最大输出功率达到41.6W,斜率效...     

激光二极管抽运掺Yb3+光纤放大器获得2.41W超短脉冲输出

对国产掺镱(Yb3 )双包层大模场面积光纤超短脉冲放大器进行了系统的实验研究。以自己搭建的脉冲宽度为2.3ps,重复频率为95MHz的全固态锁模激光器作为种子源,以976nm大功率光纤耦合激光二极管为抽运源,以1.6m国产掺Yb3 双包层大模场面积光纤为增益介质,在11.2W的入纤抽运功率下,将平均功率为100mW的脉冲种子光放大到平均功率2.41W,单脉冲能量达到了25nJ,放大后脉冲的宽度(时域宽度)和光谱都有所展宽。     

百瓦级全光纤掺铥光纤激光器及超荧光光源

报道了一个全光纤主振荡功率放大(MOPA)结构的窄线宽掺铥连续光纤激光器,该高功率光纤激光器由窄线宽连续光纤激光种子源和两级包层抽运掺铥光纤放大器组成。激光种子源经过两级双包层掺铥光纤放大器后,最大平均输出功率为120W,功率放大器的斜率效率高达60%,输出激光的中心波长为1986nm,3dB光谱带宽为0.48nm,平均输出功率未能进一步提高仅受限于最大抽运功率。此外,利用该两级掺铥光纤放大器,得到了平均输出功率为122W的宽带超荧光光源,放大后的超荧光源的中心波长为1990nm,3dB光谱带宽为25nm。     

39fs,16W全光子晶体光纤飞秒激光系统

实验研究了高平均功率输出的光子晶体光纤飞秒激光系统。系统中振荡器和放大器均使用保偏型掺Yb3 双包层大模场面积光子晶体光纤(LMA-PCF)为增益介质,具有极低非线性系数、很高的增益系数,并能保证很好的环境稳定性。系统研究了种子光功率、脉冲宽度、脉冲啁啾和放大器抽运光功率等参数对系统输出飞秒激光脉冲宽度的影响。在输入种子光平均功率为180mW,放大器抽运功率为40W时,获得平均功率16W输出(对应单脉冲能量320nJ),脉冲宽度压缩到39fs。     

全光纤结构的两级分布式窄线宽双包层光纤放大器

利用主振荡一功率放大(MOPA)技术,实验研究了两级级联、全光纤结构的窄线宽连续激光放大器.其中,以20dB光谱线宽0.078nm的窄线光纤激光器为信号光源,两个放大级中分别采用光纤侧面耦合器,(6+1)X1光纤合束器实现抽运光功率的耦合.以及使用1053nm单模纤芯的双包层掺镱光纤、大模场面积的掺镱双包层光纤作为增益光纤.在伞光纤结构放大器中,对第二级放大级中(6+1)X1抽运光注入端的反向传输光的光谱和功率进行了监测和分析.通过优化增益光纤的长度,抑制了掺镱光纤中自发辐射光的自牛激光振荡.在窄线宽激光放大过程中实现了中心波长1053 nm.总放大增益27.6 dB,功率16.09 W的稳定激光输出,没有发现受激布里渊散射和受激拉曼散射等非线性效应.     

高功率掺镱双包层光纤飞秒脉冲放大器

采用双包层光纤对超快激光脉冲放大的研究已经成为一个热点课题。双包层光纤实现了连续激光、Nd：glass和Yb：KGW等脉冲激光为种子光的放大。迄今为止，掺Yb激光晶体中基态能级分裂最大的是Yb：GSO晶体，为1067cm。较高热导率使得Yb：GSO晶体仅依靠自然冷却就可在高功率抽运时保持稳定的连续或飞秒激光输出。本实验利用种子源主振荡放大（MOPA）技术，以Yb：GSO激光为种子光，获得了平均功率为10W的飞秒激光输出。     

高功率窄线宽光纤放大器及放大线宽特性

研制了高功率窄线宽光纤放大器.该放大器采用双级放大结构,其中第一级预放为掺Er3+光纤放大器,第二级功率放大采用10 m长的Er3+/Yb3+共掺双包层光纤作为增益介质,抽运源采用两支波长为980 nm的大功率激光二极管.当抽运功率为10.7 W时,得到放大激光输出功率为1.94 W,光一光转换效率为17%,斜率效率20%.采用延迟自外差方法对种子激光器及各级放大器输出的激光线宽进行了测量,测量结果表明窄线宽激光谱线经过掺Er3+光纤与双包层光纤放大后均有不同程度的明显展宽.分析认为激光线宽展宽的主要原因是由于种子激光器中弛豫振荡或自脉冲的强度波动引起的自相位调制.     

瓦级输出全光纤结构2.0μm掺铥皮秒脉冲光纤激光器

研制了高功率全光纤结构2μm波段掺铥皮秒脉冲光纤激光器。该激光器采用了主振荡功率放大(MOPA)结构设计,种子源采用790nm的多模半导体激光器作为抽运源、双包层掺铥光纤作为激光增益介质、半导体可饱和吸收镜(SESAM)作为锁模器件,从而实现了重复频率为10.4MHz的皮秒激光脉冲输出,其最大平均输出功率为15mW。种子源经过一级掺铥光纤放大器后,获得了1.1W高平均功率输出,相应的单脉冲能量高达105nJ,激光脉冲宽度为9ps,峰值功率为11.6kW。此时测得激光脉冲的中心波长为1963nm,3dB光谱带宽为0.5nm。     

低重复频率脉冲掺镱光纤放大器

为了研究低重复频率两级脉冲掺Yb3+光纤放大器,采用脉冲信号驱动的半导体激光器作为种子光源,产生重频100Hz、半峰全宽100ns、能量30nJ的矩形光脉冲。第1级放大采用单模掺Yb3+光纤放大器,双程放大方案有效地抑制了放大自发辐射,放大后的脉冲能量达到了8.2μJ。第2级放大采用纤芯直径15μm的双包层掺Yb3+光纤放大器,大功率多模半导体激光器连续抽运。结果在抽运功率为7.3W时,放大输出脉冲能量达到了242μJ,放大输出半峰全宽压缩为29ns。输出的光束质量较好,为准单模输出。结果表明,该光纤放大器输出脉冲能量高,具有全光纤化、结构简单的特点。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.