一种用于IEEE802.16d的联合信道估计算法

针对IEEE802.16d帧结构提出一种结合前导训练序列和导频的信道估计算法。算法通过前导完成初始精确的信道估计,再使用判决反馈方式提高导频估计准确度,并根据前后符号导频估计结果得到反映信道变化的时变因子,利用它来调整前导估计和导频估计比例,联合完成信道估计。仿真结果表明,与传统的信道估计方法相比,此算法能够更有效的对抗频率选择性衰落和更大的多普勒频移,改善系统的性能。     

一种新的基于判决反馈的OFDM系统信道估计方法

提出了一种基于判决反馈机制的信道估计方法,采用少量导频估计出初始信道信息,再从接收端检测出的符号中选取一组包含了少量错误的符号作为准导频,反馈到信道估计器,与初始的导频一起构成数量更多的导频序列,经过几次迭代,达到提高信道估计精度的目的。为提高初始估计的精度。信道估计采用了一种频域分集的方法。计算机仿真表明,在多径瑞利衰落信道下,本文的方法可以在较低的复杂度下有效地提高信道估计的精度,在MMSE接收条件下,系统具有良好的误比特率（BER）性能。     

一种基于可靠判决反馈信号的SC-FDMA信道估计算法

针对SC-FDMA系统,提出一种基于LS,LMMSE的判决反馈信道估计算法。该算法通过设置门限BER,在初始信道估计之后得到的判决反馈信号中选取合适可靠的信号作为准导频信号,与原导频一起进行二次信道估计,通过导频数量的增加来提高信道估计的精度。理论分析和仿真结果表明,该算法提高了信道估计的精度,而且提高了通信性能。     

MIMO-OFDM系统的信道估计算法

基于训练序列的信道估计方法在慢衰落信道中呈现出较好的性能，但是这种方法不适用于快衰落环境，为了能够及时跟踪信道的变化，通常采用基于导频符号的信道估计方法。将针对采用连续传输方式的MIMO—OFDM系统，讨论基于导频符号的信道估计方法并进行了计算机仿真。     

一种新的导频符号辅助下的信道衰落估计方法

本文提出一种新的导频符号辅助下的信道衰落估计方法。它同时利用导频符号和数据符号进行信道衰落估计和补偿,而不同于传统的信道衰落估计只利用导频符号的信息。此方法具有实现简单,延时小的优点。针对16PSK和16QAM调制方式作了仿真,结果显示导频符号辅助下的16QAM的性能优于16PSK,采用信道衰落估计与相干检测结合的16PSK性能又好于采用差分检测的16PSK的性能。     

一种新的导频符号辅助下的信道衰落设计方法

本文提出一种新的导频符号辅助下的信道衰落估计方法。它同时利用导频符号和数据符号进行信道衰落估计和补偿。而不同于传统的信道衰落估计只利用导频符号的信息。此方法具有实现简单,延时小的优点。针对１６ＰＳＫ和１６ＱＡＭ调制方式作了仿真,结果显示导频符号辅助下的１６ＱＡＭ的性能优于１６ＰＳＫ,采用信道衰落估计与相干检测结合的１６ＰＳＫ性能又好于采用差分检测的１６ＰＳＫ的性能。     

BICM-OFDM系统中基于叠加导频的迭代信道估计

传统叠加导频算法应用在正交频分复用系统中存在信道估计精度差的缺点。针对比特交织编码调制（BICM）联合正交频分复用（OFDM）的系统（BICM—OFDM）,提出一种利用叠加导频的迭代信道估计算法。该算法充分利用了均衡器的反馈信息,分两步进行。首先,导频信号叠加在发送信号上,接收端采用一阶统计量进行初始信道估计;然后利用均衡器的硬判决反馈信息,在信道估计与均衡之间进行信息交换,通过迭代的方式提高信道估计精度。在短波宽带信道下的仿真结果表明,与传统叠加导频算法相比,新算法经过二次迭代可有效提高信道估计精度和系统误码率性能。     

DVB-T前向预测自适应信道估计算法的研究

提出了一种基于导频的前向预测自适应信道估计算法。该算法在最小平方误差(LS)算法的基础上采用2维插值方法估计出无线信道的频率响应。在时间维方向上,对当前符号的导频位置根据系统软判决信噪比和多普勒影响的估计进行自适应插值。在频域维方向上直接进行低通滤波。     

基于STBC-SCFDE系统的信道估计算法研究

针对频率选择性衰落信道下2发射天线的空时分组编码-单载波频域均衡(STBC-SCFDE)系统,分别设计了2种新颖的时域多天线导频序列和频域多天线导频序列,相应地提出了一种时域导频信道估计算法和一种频域导频信道估计算法,并分别进行了信道估计的MSE性能分析以及计算复杂度对比.仿真验证表明,相比传统经典多天线信道估计算法,所提2种信道算法在中低信噪比下均能实现良好的信道估计性能,为未来无线通信系统的信道估计开辟了新的解决途径.     

基于直接判决和导频跟踪的OFDM系统快时变信道估计

提出了一种基于直接判决的OFDM系统的快时变信道估计方法。采用了直接判决算法进行信道估计，并从中选择有效的估计结果，联合导频信号进行信道跟踪。将基于训练序列的信道估计结果作为直接判决算法的初始值，利用传输信号直接判决的统计特性进行了信道估计，并利用改进的导频算法进一步地跟踪信道在时间上的变化。Simulink仿真结果表明，该估计算法适用于时变信道，比基于导频的信道估计方法和基于训练序列的信道估计方法效果都要好。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.