薄膜太阳能电池前景

光伏产业已成为我国可再生能源产业中继风力发电之后发展最快的产业,光伏发电技术也是全球研究的热点之一。在薄膜太阳能光伏电池的优势和现有薄膜PV基础上,分析了薄膜光伏技术进入商业化的问题所在,探索了薄膜太阳能电池的应用及产能潜势,展望了α—Si与CdTe薄膜光伏产业前景。     

我国首台薄膜太阳能电池关键设备下线

日前,我国首台代表着国际尖端技术水平的薄膜太阳能电池关键生产设备——等离子体增强型化学气相沉积设备(PECVD)在上海理想能源设备公司正式下线。消息传来,引起业内高度关注,有专家指出,该设备的研制成功和下线,填补了光伏电池高端设备国产化的空     

薄膜太阳能电池的研究进展

薄膜太阳能电池是缓解能源危机的新型光伏器件。评述了薄膜太阳能电池的优缺点,主要介绍了薄膜硅太阳能电池、多元化合物薄膜太阳能电池和有机薄膜太阳能电池的研究现状,总结了它们各自在价格成本、光电转换效率及对环境影响等方面的特点,并对其发展趋势进行了展望。     

CIGS薄膜太阳能电池结构分析

阐述了影响铜铟镓硒(CIGS)薄膜太阳能电池性能和效率的技术因素,包括CIGS半导体材料的晶体结构、电池的结构组成、衬底材料的选择以及CIGS薄膜的Na掺杂等。分析了多元共蒸发法、硒化法沉积CIGS吸收层以及化学水浴法沉积Cd S缓冲层的具体工艺和特征,介绍了柔性CIGS薄膜太阳能电池的卷对卷技术,最后就CIGS薄膜太阳能电池的研发与商业化生产中遇到的挑战及解决方法进行了分析与归纳。     

晶体硅太阳能电池的光伏特性研究

太阳能光伏技术是把太阳的光能转换成电能的主要方式。目前主要的太阳能光伏转换器件有硅太阳能电池,砷化镓太阳电池,燃料敏华太阳电池和薄膜太阳电池等。其中,硅太阳电池是主要技术。对光伏电池输出特性进行深入广泛的研究具有重要意义。在分析太阳能光伏发电的基本原理基础上,研究了太阳能电池的I-V特性、照度特性,然后对光伏实验系统进行了相关的测试。     

首台“中国造”高端薄膜太阳能电池关键生产设备下线

日前,我国首台代表国际尖端水平的薄膜太阳能电池关键生产设备——等离子体增强型化学气相沉积设备（PECVD）在上海理想能源设备公司（下文简称“理想能源”）成功下线,打破了高端薄膜太阳能电池设备一直被国外厂商垄断的局面,并有望大幅降低太阳能发电成本。中共中央政治局委员、上海市委书记俞正声致信祝贺。     

我国生产高端薄膜太阳能电池有了“利器”

不久,一种更＂给力＂并实惠的能源将走入寻常百姓家。日前,首台代表着国际尖端技术水平的薄膜太阳能电池关键生产设备——等离子体增强型化学气相沉积设备（PECVD）在位于上海张江的理想能源设备公司正式下线。这台设备的研制成功和下线,大幅降低硅薄膜电池生产成本,打破了高端薄膜太阳能电池设备市场一直被国外厂商垄断的局面,     

薄膜太阳能电池研究进展

薄膜太阳能电池是有效利用新能源的新型光伏器件。本文综述了硅基类、化合物类以及染料敏化三种薄膜太阳能电池研究现状,并展望了未来的发展前景。     

正泰太阳能意在高端薄膜市场

以晶体硅光伏产品作为切入点,以高端薄膜太阳能电池作为目标市场,今年12月,杭州正泰太阳能科技将启动其第一条薄膜太阳能电池中试线,该中试线采用非晶加微晶工艺,据悉,初期产品稳定后的转化效率将达到9．3％,并定下了短期内转换效率到达10％的目标。正泰太阳能董事总经理杨立友博士表示：无论是从技术,还是规模,正泰希望走在中国高端薄膜太阳能电池的前列。     

光伏走进薄膜时代？

晶体硅和薄膜太阳能光伏电池是现在乃至未来十年的两大主要技术阵营,晶体硅太阳能电池以高转化效率在过去和现在都主导着光伏市场。而薄膜电池在原有转化效率上突破性的进展以及相对低廉的成本在近两年吸引了投资者更多的关注,处于其急速发展期。     

Process development and comparison of various boron emitter technologies for high‐efficiency (~21%) n‐type silicon solar cells

This paper shows for the first time a comparison of commercial‐ready n‐type passivated emitter , rear totally diffused solar cells with boron (B) emitters formed by spin‐on coating, screen printing, ion implantation, and atmospheric pressure chemical vapor deposition. All the B emitter technologies show nearly same efficiency of ~20%. The optimum front grid design (5 busbars and 100 gridlines), calculated by an analytical modeling, raised the baseline cell efficiency up to 20.5% because of reduced series resistance. Along with the five busbars, rear point contacts formed by laser ablation of dielectric and physical vapor deposition Al metallization resulted in another 0.4% improvement in efficiency. As a result, 20.9% efficient n‐type passivated emitter, rear totally diffused cell was achieved in this paper. Copyright © 2016 John Wiley & Sons, Ltd.     

n-i-p型非晶硅太阳电池中p/ITO界面特性研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备n-i-p型非晶硅(a-Si)太阳电池,采用反应热蒸发法制备ITO薄膜作为太阳电池的前电极。通过改变B2H6的掺杂浓度获得了不同晶化率的p层,详细研究了p层性能对p/ITO界面特性以及电池性能的影响。结果表明,在合适晶化率的p层上沉积ITO薄膜有利于优化p/ITO界面的接触特性,将其应用于n-i-p型a-Si太阳电池,能够显著改善电池的开路电压(Voc)和填充因子(FF),最终,在不锈钢(SS)衬底上获得了转换效率为6.57%的单结a-Si太阳电池。     

Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells

Thin‐film solar cells consisting of earth‐abundant and non‐toxic materials were made from pulsed chemical vapor deposition (pulsed‐CVD) of SnS as the p‐type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n‐type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post‐deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright © 2014 John Wiley & Sons, Ltd.     

化学抛光处理和低温退火对硅异质结太阳电池性能的影响

Amorphous/crystalline silicon heterostructure solar cells have been fabricated by hot wire chemical vapor deposition （HWCVD） on textured p-type substrates. The influence of chemical polish （CP） etching and the post annealing process on the solar cell performance have been studied. The CP treatment leads to a reduction of stress in the i-layer by the slight rounding of the pyramid peaks, therefore improving the deposition coverage and the contact by each layer, which is beneficial for the performance of the solar cells. An optimized etching time of 10-15 s has been obtained. A post annealing process leads to a considerably improved open voltage （Voc）, filled factor （FF）, and conversion efficiency （η） by restructuring the deposited film and reducing the series resistance. An efficiency of 15.14% is achieved that represents the highest result reported in China for an amorphous/crystalline heterostructure solar cells based on the textured p-type substrates.     

Silicon heterojunction solar cell: a new buffer Layer concept with low-temperature epitaxial silicon

Amorphous silicon/crystalline silicon heterojunction solar cells, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, have been fabricated using different technologies to passivate defects at the heterointerface: without treatment, the insertion of a thin intrinsic amorphous layer or that of a thin intrinsic epitaxial layer. The open circuit voltage of heterojunction solar cells fabricated including an intrinsic amorphous buffer layer is strangely lower than in devices with no buffer layer. The structure of the amorphous buffer layer is investigated by high resolution transmission electron microscope observations. As an alternative to amorphous silicon, the insertion of a fully epitaxial silicon layer, deposited at low temperature with conventional PECVD technique in a hydrogen-silane gas mixture, was tested. Using the amorphous silicon/crystalline silicon (p a-Si/i epi-Si/n c-Si) heterojunction structure in solar cells, a 13.5% efficiency and a 605-mV open circuit voltage were achieved on flat Czochralski silicon substrates. These results demonstrate that epitaxial silicon can be successfully used to passivate interface defects, allowing for an open circuit voltage gain of more than 50 mV compared to cells with no buffer layer. In this paper, the actual structure of the amorphous silicon buffer layer used in heterojunction solar cells is discussed. We make the hypothesis that this buffer layer, commonly considered amorphous, is actually epitaxial.     

掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用

在掺杂P室采用甚高频等离子体增强化学气相沉积（VHF—PECVD）技术,制备了不同硅烷浓度条件下的本征微晶硅薄膜．对薄膜电学特性和结构特性的测试结果分析表明：随硅烷浓度的增加,材料的光敏性先略微降低后提高,而晶化率的变化趋势与之相反;X射线衍射（xRD）测试表明材料具有（220）择优晶向．在P腔室中用VHF—PECVD方法制备单结微晶硅太阳能电池的i层和p层,其光电转换效率为4．7％,非晶硅／微晶硅叠层电池（底电池的p层和i层在P室沉积）的效率达8．5％．     

New developments in amorphous thin-film silicon solar cells

Thin-film silicon solar cells usually contain amorphous silicon layers made by plasma enhanced chemical vapor deposition (PECVD). This CVD method has the advantage that large-area devices can be manufactured at a low processing temperature, thus facilitating low-cost solar cells on glass, metal foil, or polymer foil. In order to obtain higher conversion efficiencies while keeping the manufacturing cost low, a new development is to introduce low bandgap materials in a multijunction device structure. A frequently used low bandgap material is amorphous silicon-germanium. Record initial efficiencies in excess of 15% have been reported for triple-junction solar cells comprising these alloys. In this paper, we present a novel manufacturing method for amorphous silicon based tandem cells suitable for roll-to-roll production     

Optimizing back surface field for improving Voc of(Al)GaInP solar cell

GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of V_oc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.     

流量对高速沉积的微晶硅电池性能的影响

采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术研究微晶硅(μc-Si)薄膜的高速沉积过程发现:分别采用100和500 sccm流量制备本征μc-Si材料,将其应用在μc-Si电池i层,电池的电流-电压(I-V)特性有明显的差异.通过微区Raman、原子力显微镜(AFM)和X射线衍射(XRD)测试发现:尽管μc-Si薄膜的晶化率相似,但是小流量情况下制备的薄膜具有较厚的非晶孵化层,晶粒尺寸不一;大流量下制备的材料沿生长方向的纵向均匀性相对较好,晶粒尺寸较小、分布均匀,而且具有〈220〉晶相峰强度高于〈111〉和〈311〉晶相峰强度的特点.因此得出:在高压高速沉积μc-Si薄膜过程中,反应气体流量对μc-Si的纵向结构有很大影响,选择适合的反应气流量能够调节适宜的气体滞留时间,从而减小薄膜的纵向不均匀性.     

Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD

Large-grain polycrystalline silicon (poly-Si) films were prepared on foreign substrates by the epitaxial thickening of seed layers. The seed layers were formed by aluminum-induced crystallization (AIC). Large-grain n-i-p poly-Si solar cells were deposited on epitaxial seeds by hot-wire chemical vapor deposition (HWCVD). Highly (93%) crystalline fractions with a lateral grain size of 5 ?m and an intrinsic layer were grown without incubation. These techniques were employed to prepare large-grain poly-Si thin-film solar cells. An ITO/n-i-p (HWCVD)/p+ (AIC)/Ti/glass-structured poly-Si thin-film solar cell with an initial efficiency of 5.6% was obtained.