Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells

Thin‐film solar cells consisting of earth‐abundant and non‐toxic materials were made from pulsed chemical vapor deposition (pulsed‐CVD) of SnS as the p‐type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n‐type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post‐deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright © 2014 John Wiley & Sons, Ltd.     

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high‐efficiency solar cells

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer‐growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect‐management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast‐diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection‐dependent lifetime measurements. Copyright © 2015 John Wiley & Sons, Ltd.     

HAWT near‐wake aerodynamics,Part I: axial flow conditions

An improved physical understanding of the rotor aerodynamics of a horizontal axis wind turbine (HAWT) is required to reduce the uncertainties associated with today's design codes. Wind tunnel experiments contribute to increased knowledge and enable validation and construction of models. The present study focuses on the near‐wake of a model HAWT in both axial and yawed flow conditions. At three downstream planes parallel to the rotor plane, single‐sensor hot‐film traverses are made. The phase‐locked unsteady three‐dimensional flow velocity vector is determined by a novel data reduction method. A series of two papers discusses the near‐wake aerodynamics of a model HAWT. The main goals are to obtain a detailed understanding of the near‐wake development and to arrive at a base for model construction and validation. The first paper presents the experimental setup, data reduction and the results for the baseline case (axial flow conditions). In the second paper, the results for the yawed flow cases are presented and the effect of yaw misalignment on the near‐wake development is discussed. Copyright © 2008 John Wiley & Sons, Ltd.     

Single‐Phase Filamentary Cellular Breakdown Via Laser‐Induced Solute Segregation

Nanosecond melting and quenching of materials offers a pathway to novel structures with unusual properties. Impurity‐rich silicon processed using nanosecond‐pulsed‐laser‐melting is known to produce nanoscale features in a process referred to as “cellular breakdown” due to destabilization of the planar liquid/solid interface. Here, atom probe tomography combined with electron microscopy is applied to show that the morphology of cellular breakdown in these materials is significantly more complex than previously documented. Breakdown into a complex, branching filamentary structure topped by a few nm of a cell‐like layer is observed. Single‐phase diamond cubic silicon highly supersaturated with at least 10% atomic Co and no detectable silicides is reported within these filaments. In addition, the unprecedented spatio‐chemical accuracy of the atom probe allows to investigate nanosecond formation dynamics of this complex material. Previously reported properties of these materials can now be reconsidered in light of their true composition, and this class of inhomogeneous metastable alloys in silicon can be explored with confidence.     

SnS thin-films by RF sputtering at room temperature

Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images.     

Engineering metal-impurity nanodefects for low-cost solar cells

As the demand for high-quality solar-cell feedstock exceeds supply and drives prices upwards, cheaper but dirtier alternative feedstock materials are being developed. Successful use of these alternative feedstocks requires that one rigorously control the deleterious effects of the more abundant metallic impurities. In this study, we demonstrate how metal nanodefect engineering can be used to reduce the electrical activity of metallic impurities, resulting in dramatic enhancements of performance even in heavily contaminated solar-cell material. Highly sensitive synchrotron-based measurements directly confirm that the spatial and size distributions of metal nanodefects regulate the minority-carrier diffusion length, a key parameter for determining the actual performance of solar-cell devices. By engineering the distributions of metal-impurity nanodefects in a controlled fashion, the minority-carrier diffusion length can be increased by up to a factor of four, indicating that the use of lower-quality feedstocks with proper controls may be a viable alternative to producing cost-effective solar cells.     

Multi-Fidelity High-Throughput Optimization of Electrical Conductivity in P3HT-CNT Composites

Combining high-throughput experiments with machine learning accelerates materials and process optimization toward user-specified target properties. In this study, a rapid machine learning-driven automated flow mixing setup with a high-throughput drop-casting system is introduced for thin film preparation, followed by fast characterization of proxy optical and target electrical properties that completes one cycle of learning with 160 unique samples in a single day, a > 10 ×  improvement relative to quantified, manual-controlled baseline. Regio-regular poly-3-hexylthiophene is combined with various types of carbon nanotubes, to identify the optimum composition and synthesis conditions to realize electrical conductivities as high as state-of-the-art 1000 S cm⁻¹. The results are subsequently verified and explained using offline high-fidelity experiments. Graph-based model selection strategies with classical regression that optimize among multi-fidelity noisy input-output measurements are introduced. These strategies present a robust machine-learning driven high-throughput experimental scheme that can be effectively applied to understand, optimize, and design new materials and composites.