Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition

Pulsed laser deposition （PLD） is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared under various deposition conditions by PLD. The effects of various substrate temperature, oxygen partial pressure, annealing temperature, substrate, buffer layers thickness and film thickness on micro-structural, optical and electrical properties of ZnO films grown by PLD technology are reviewed. ZnO films with special function can grow under proper conditions by PLD.     

GaAs m.e.s.f.e.t. prepared by organometallic chemical vapour deposition

GaAs m.e.s.f.e.t.s with gate dimensions of 1.5 ?m × 300 ?m were fabricated in the epitaxial layers grown by organometallic chemical vapour deposition (o.m.c.v.d.) technique. The average saturation velocity in the channel was deduced to be 1.3 × 107 cm/s and is equal to that of epitaxial layers grown by AsCl3 chemical vapour deposition (c.v.d.). The velocity degraded region was confined to within about 350 ? of the interface. A gain of 10 dB and a noise figure of 3 dB with an associated gain of 5.5 dB at 8 GHz were measured.     

Growth conditions to achieve mobility enhancement in AlxGa1?xAs-GaAs heterojunctions by m.b.e.

Modulation doped Al0.25Ga0.75As-GaAs heterojunctions have been prepared by molecular beam epitaxy (m.b.e.). Al0.25Ga0.75As layers were doped with Si to a level of ~ 3 × 1017 cm?3, whereas the GaAs layers were either unintentionally doped, doped lightly n-type with Sn, or doped lightly p-type with Be. Heterojunction structures having single and multiple periods have shown enhanced mobility only with the AlxGa1?xAs layer at the surface and the GaAs layer underlying. These results represent the first report that electrons spill over only into the underlying GaAs layer from the top AlxGa1?xAs layer.     

PLD法制备基于缓冲层的ZnO薄膜及纳米棒研究进展

综述了脉冲激光沉积(PLD)法基于缓冲层制备ZnO薄膜及ZnO纳米棒的研究进展,分析了缓冲层对于生长高质量ZnO薄膜及纳米棒的作用,得到结论:引入缓冲层可以减少沉积物与衬底晶格失配以及热膨胀系数不匹配的问题。     

Micrometre-gate m.e.s.f.e.t.s on laser-annealed polysilicon

Schottky-barrier field-effect transistors (m.e.s.f.e.t.s) have been fabricated on uniformly doped laser-annealed polycrystalline silicon deposited on a silicon nitride insulator. The devices, which had aluminium Schottky-barrier gates and diffused n+ sources and drains but nonoptimised channel profiles, had about 65% the gm values of similar but optimised devices made on s.o.s. layers. Performance of these devices is considered adequate for certain innovative integrated-circuit technologies.     

Impact of oxygen concentration during the deposition of window layers on lowering the metastability effects in Cu(In,Ga)Se2/CBD Zn(S,O) based solar cell

The purpose of the present paper is to focus on the impact of oxygen gas partial pressure during the sputtering of i‐ZnO and ZnMgO on the transient behavior of Cu(In,Ga)Se₂ (CIGSe) based solar cells parameters when a CBD‐Zn(S,O) buffer layer is used. Based on electrical characterization of cells, it is observed that the effect of light soaking is different on J–V characteristics depending on whether oxygen is or is not present during the first deposition time of the i‐ZnO or ZnMgO layers. In fact, when cells are prepared with standard i‐ZnO, the efficiencies are very low and a pronounced transient behavior is observed. However, when the first 10 nm of i‐ZnO or ZnMgO is formed by sputtered layer without adding oxygen during the process, depending on the thickness of the buffer layer, the transient effects strongly decreases. It is then possible to get stable cells reaching efficiencies quite similar to the CdS reference cells, especially with ZnMgO, without any post‐treatments. Copyright © 2015 John Wiley & Sons, Ltd.     

Chemical Solution Deposition of LaMnO 3 Buffer Layers for Coated Conductors

Chemical solution deposition (CSD) is used to prepare LaMnO (LMO) buffer layers on different substrates. The results show that biaxially oriented LMO films can be successfully prepared on single-crystal SrTiO₃ (STO) and STO buffered single-crystal LaAlO₃ substrates when humid 4%H₂-N₂ annealing atmosphere is used. The orientation of LMO-Ni is (110)-oriented even when the annealing atmosphere is humid 4%H₂-N₂. When CSD-derived STO-Ni is used as a template, biaxially oriented LMO buffer layers with c-axis orientation can be successfully prepared. The results provide an effective route to prepare LMO-based buffer layers using CSD.     

Microwave power amplification with InP f.e.t.s

InP f.e.t.s were fabricated from v.p.e. layers, with an Al gate of 1.5 ?m × 308 ?m. The power output at 9 GHz, with 4 dB gain, was 1.15 W/mm gate width. This result is believed to be higher than the best published results obtained with equivalent GaAs f.e.t. structures.     

Substrate dependence of InP m.e.s.f.e.t. performance

There is evidence to suggest that Fe outdiffuses, during the growth, into the epitaxial films prepared by vapour-phase epitaxy at 650°C. Field-effect transistors on Fe-doped material show substantial looping that was absent on Cr-doped material and exhibit about 2 dB worse noise figure at about 7 GHz. Experiments with low 1015 S-doped InP grown on Sn-, Cr- and Fe-doped substates indicate that such outdiffusion is typically about 5 ?m. Saturation velocity levels in the m.e.s.f.e.t. channel are about 1.7 × 107 cm/s and 1.3 × 107 cm/s, associated with Cr and Fe doped substrates, respectively.     

Ion-implanted GaAs X-band power f.e.t.s

Active layers for GaAs power f.e.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1.05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices.     

Effects of the Morphology of a ZnO Buffer Layer on the Photovoltaic Performance of Inverted Polymer Solar Cells

The influences of morphology and thickness of zinc oxide (ZnO) buffer layers on the performance of inverted polymer solar cells are investigated. ZnO buffer layers with different morphology and thickness varying from several nanometers to ≈55 nm are fabricated by adjusting the concentration of the precursor sol. The ZnO buffer layers with nearly same surface quality but with thickness varying from ≈7 to ≈65 nm are also fabricated by spinning coating for comparison. The photovoltaic performance is found to be strongly dependent on ZnO surface quality and less dependent on the thickness. The use of dense and homogenous ZnO buffer layers enhances the fill factor and short‐circuit current of inverted solar cell without sacrificing the open‐circuit voltage of device due to an improvement in the contact between the ZnO buffer layer and the photoactive layer. Inverted devices with a dense and homogenous ZnO buffer layer derived from 0.1 M sol exhibit an overall conversion efficiency of 3.3% which is a 32% increase compared to devices with a rough ZnO buffer layer made from 1 M sol, which exhibited a power conversion efficiency of 2.5%. The results indicate that the efficiency of inverted polymer solar cells can be significantly influenced by the morphology of the buffer layer.     

Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

ZnO thin films without and with a homo-buffer layer have been prepared on Si(1 1 1) substrates by pulsed laser deposition (PLD) under various conditions. Photoluminescence (PL) measurement indicates that the optical quality of ZnO thin film is dramatically improved by introducing oxygen into the growth chamber. The sample deposited at 60 Pa possesses the best optical properties among the oxygen pressure range studied. X-ray diffraction (XRD) results show that the films directly deposited on Si are of polycrystalline ZnO structures. A low-temperature (500 °C) deposited ZnO buffer layer was used to enhance the crystal quality of the ZnO film. Compared to the film without the buffer layer, the film with the buffer layer exhibits aligned spotty reflection high-energy electron diffraction (RHEED) pattern and stronger near-band-edge emission (NBE) with a smaller full-width at half-maximum (FWHM) of 98 meV. The structural properties of ZnO buffer layers grown at different temperatures were investigated by RHEED patterns. It is suggested that the present characteristics of the ZnO epilayer may be raised further by elevating the growth temperature of buffer layer to 600 °C.     

Stable s.e.c. target for television camera tubes

Various aspects of the overload signal stability of s.e.c. targets, formed from good and poor secondary-emitting materials, are considered. It is shown that a target consisting of two layers can be made to be inherently stable to signal overload, while still having a high gain.     

Very-high-purity InP l.p.e. layers

Very-high-purity l.p.e. InP layers with a ?77 of 67 000cm2/Vs and an n77 of 1.1 × 1015 cm?3, virtually uncompensated, having a low freeze-out ratio of 1.03, and with continuous surfaces with terraces but no inclusions, have been successfully grown, after the residual silicon donor in the melt has been baked away in H2 with trace amounts of H2O.     

掺铬GaAs缓冲层的FET外延材料

使用Ga-AsCl_3-H_2系统和双室反应管的方法,连续生长具有掺铬缓冲层的FET材料.以铬和SnCl_4作掺杂剂分别生长高阻缓冲层和n-n~+层.阐述影响多层外延质量的一些因素和实验结果.用本方法制管的多层外延材料制作C-X波段功率FET,得到了较好的结果.     

n- and p-channel m.o.s.f.e.t.s as Rayleigh-surface-wave detectors

We have studied the piezoresistance effect in an m.o.s.f.e.t. structure used as a Rayleigh-surface-wave transducer. The investigation was carried out over a large frequency range about a central value of 100 MHz. Results for silicon?m.o.s.f.e.t. n- and p- channel inversion layers are given.     

Interface Analysis of Cu(In,Ga)Se2 and ZnS Formed Using Sulfur Thermal Cracker

We analyzed the interface characteristics of Zn‐based thin‐film buffer layers formed by a sulfur thermal cracker on a Cu(In,Ga)Se₂ (CIGS) light‐absorber layer. The analyzed Zn‐based thin‐film buffer layers are processed by a proposed method comprising two processes — Zn‐sputtering and cracker‐sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn‐based film thicknesses, an 8 nm–thick Zn‐based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band‐gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter‐diffusion.     

Offset-voltage temperature-coefficient in dual m.o.s.f.e.t. source followers

A technique is given for predicting the approximate temperature coefficient of offset voltage of a differential m.o.s.f.e.t. source-follower arrangement incorporated in a unity-gain buffer amplifier set up for zero offset at room temperature. The prediction is dependent on only one measurement, using a bridge-circuit technique, and takes account of possible power-law differences in the nominally matched dual m.o.s.f.e.t.s.     

AlGaN缓冲层结构对Si基GaN材料性能的影响

Si衬底与GaN之间较大的晶格失配和热失配引起的张应力使GaN外延层极易产生裂纹,如何补偿GaN所受到的张应力是进行Si基GaN外延生长面临的首要问题.采用金属有机化合物化学气相沉积(MOCVD)技术在4英寸(1英寸=2.54 cm)Si (111)衬底上制备了GaN外延材料并研究了不同AlGaN缓冲层结构对Si基GaN外延材料性能的影响,并采用高分辨X射线衍射仪(HRXRD)、原子力显微镜(AFM)、喇曼光谱以及光学显微镜对制备的GaN材料的性能进行了表征.采用3层A1GaN缓冲层结构制备了表面光亮、无裂纹的GaN外延材料,其(002)晶面半高宽为428 arcsec,表面粗糙度为0.194 nm.结果表明,采用3层A1GaN缓冲层结构可以有效地降低GaN材料的张应力和位错密度,进而遏制表面裂纹的出现,提高晶体质量.     

Influences of ZnO buffer layers on the quality of ZnO films synthesized by the metal-organic chemical vapor deposition process

High-quality ZnO thin films were prepared by metal-organic chemical vapor deposition (MOCVD) on a sapphire (a-Al₂O₃) substrate. The synthesis of ZnO films was performed over a substrate temperature of 400–700°C and at chamber pressures of 0.1–10 torr. The structural and optical properties of ZnO films were investigated in terms of deposition conditions, such as substrate temperature, working pressure, and the ratio of Zn precursor (Diethylzinc (DEZn)) to oxygen. The ZnO films, preferentially oriented to 34.42° diffraction because of the (002) plane, were obtained under processing conditions of 700°C and 3 torr. This film shows a full-width at half-maximum (FWHM) of 0.4–0.6°. The results of photoluminescence (PL) spectroscopy also show a strong near band-edge emission at 3.36 eV at 10 K as well as a very weak emission at deep levels around 2.5 eV at room temperature. In addition, we are interested in the introduction of ZnO buffer-layer growth by the sputtering process to reduce lattice mismatch stress. This paper addresses how to advance the crystalline and optical properties of film. The ZnO film grown with the aid of a buffer layer shows a FWHM of 0.06–0.1° in the x-ray diffraction (XRD) pattern. This result indicates that crystalline properties were highly improved by the ZnO buffer layers. The PL spectroscopy data of ZnO film also shows a strong near band-edge emission and very weak deep-level emission similar to films synthesized without a buffer layer. Accordingly, synthesized ZnO films with buffer layers indicate fairly good optical properties and low defect density as well as excellent crystallinity.