InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm

Diode lasers based on InAsSb/InAsSbP with separate electrical and optical confinement, emitting in the wavelength interval 3–4 μm, are investigated. The lasers attain a higher operating temperature when electrical confinement is created by means of type-II heterojunctions. Interface Auger recombination is suppressed in lasers of this type, and the experimental current density is close to the theoretically calculated value for the case of predominant volume Auger recombination at a temperature of 180–220 K. Fiz. Tekh. Poluprovodn. 31, 976–979 (August 1997)     

Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode

The influence of temperature on the intensity of light emitted by as well as the carrier life time of a standard AlGaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay(OCVD) technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.     

Exciton radiative lifetime in CdSe quantum dots

Colloidal CdSe quantum dots(QDs) are promising materials for solar cells because of their simple preparation process and compatibility with flexible substrates. The QD radiative recombination lifetime has attracted enormous attention as it affects the probability of photogenerated charges leaving the QDs and being collected at the battery electrodes. However, the scaling law for the exciton radiative lifetime in CdSe QDs is still a puzzle. This article presents a novel explanation that reconcile...     

磷吸除的机理及光电探测器的研制(英文)

<正> An efficient gettering is often performed with a back-side phosphorus diffusion; the mechanisms, not well understood, are generally attributed to induced dislocations and/or phosphide. In this work we demonstrate that the high-surface-concentration phosphorus diffusions and the final annealing at moderate temperature are able to produce gettering action. The increment of generation lifetime, measured by using MOS capacitors of starting silicon materials, and the decrement of the dark current of Dhotoelectric device are reported. The backside phosphorus diffusion (gettering) layer at different temperature has been analyzed with the help of SIMS, then we discuss the new gettering mechanism with the formation of a negatively charged pair and segregation annealing.     

Experimental study of temperature effect on the growth and collapse of cavitation bubbles near a rigid boundary

The effect of temperature on the dynamics of a laser-induced cavitation bubble is studied experimentally. The growth and collapse of the cavitation bubble are measured by two sensitive fiber-optic sensors based on optical beam deflection (OBD). Cavitation bubble tests are performed in water at different temperatures, and the temperature ranges from freezing point (0 °C) to near boiling point. The results indicate that both the maximum bubble radius and bubble lifetime are increased with the increase of temperature. During the stage of bubble rapidly collapsing in the vicinity of a solid surface, besides laser ablation effect, both the first and second liquid-jet-induced impulses are also observed. They are both increased with liquid temperature increasing, and then reach a peak, followed by a decrease. The peak appears at the temperature which is approximately the average of freezing and boiling points. The mechanism of liquid temperature influence on cavitation erosion is also discussed.     

Growth of Strained Si1－xGex Layer by UV/UHV/CVD

Strained Si1－xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃，respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si1－xGex and multilayer Si1－xGex /Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing highquality Si1－xGex /Si strained layers.     

Correlated electron-hole transitions in wurtzite GaN quantum dots:the effects of strain and hydrostatic pressure

Within the effective-mass and finite-height potential barrier approximation,a theoretical study of the effects of strain and hydrostatic pressure on the exciton emission wavelength and electron-hole recombination rate in wurtzite cylindrical GaN/Al_xGa_1-xN quantum dots（QDs） is performed using a variational approach.Numerical results show that the emission wavelength with strain effect is higher than that without strain effect when the QD height is large（> 3.8 nm）,but the status is opposite when the QD height is small（< 3.8 nm）.The height of GaN QDs must be less than 5.5 nm for an efficient electron-hole recombination process due to the strain effect.The emission wavelength decreases linearly and the electron-hole recombination rate increases almost linearly with applied hydrostatic pressure.The hydrostatic pressure has a remarkable influence on the emission wavelength for large QDs,and has a significant influence on the electron-hole recombination rate for small QDs.Furthermore,the present numerical outcomes are in qualitative agreement with previous experimental findings under zero pressure.     

Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures

The steady-state lifetime of photogenerated minority carriers has been investigated in heterostructure HgCdTe devices fabricated on molecular-beam epitaxy (MBE) grown material. A wider bandgap capping layer (Hg_(1−x)Cd_(x)Te, x = 0.44) was grown on a narrower bandgap absorbing layer (Hg_(1−x)Cd_(x)Te, x = 0.32, λ_co,80K = 4.57 μm) material in an uninterrupted MBE growth to create an abrupt heterointerface. Steady-state lifetime as a function of temperature over the range 80–300 K was extracted from photoconductive responsivity at an optical wavelength corresponding to the peak responsivity at that temperature. At 80 K, the photoconductors exhibit a specific detectivity of 4.5 × 10¹¹ cm Hz^−1/2W⁻¹ (chopping frequency of 1 kHz). For each measurement temperature, the steady-state excess carrier lifetime determined experimentally was compared to the theoretical bulk lifetime for material with x = 0.32 and effective n-type doping density of 3.7 × 10¹⁴ cm⁻³. Theoretical calculations of the Auger-1 lifetime based on expressions developed by Pratt et al. were not able to account for the reduction in lifetime observed at temperatures above 180 K. Two approaches have been attempted to resolve this discrepancy: A semiempirical expression for Auger lifetime attributed to Meyer et al. was used to fit to the data, with the Auger coefficient γ as a fitting parameter. However, the resulting Auger coefficient found in this work is more than an order of magnitude higher than that reported previously. Alternatively, the reduction in effective lifetime above 180 K may be understood as a “loss” of carriers from the narrow bandgap absorbing layer that are promoted across the potential barrier in the conduction band into a low lifetime, wider bandgap capping layer. The reduction in lifetime as a function of inverse temperature for temperatures above 180 K may be fitted by a “cap lifetime” that has an activation energy equal to the change in bandgap across the heterostucture and scaled by a fitting constant.     

Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

The carrier lifetimes in In_xGa_1−xAs (InGaAs) and Hg_1−xCd_xTe (HgCdTe) ternary alloys for radiative and Auger recombination are calculated for temperature 300K in the short wavelength range 1.5<λ<3.7 μm. Due to photon recycling, an order of magnitude enhancements in the radiative lifetimes over those obtained from the standard van Roosbroeck and Shockley expression, has been assumed. The possible Auger recombination mechanisms (CHCC, CHLH, and CHSH processes) in direct-gap semiconductors are investigated. In both n-type ternary alloys, the carrier lifetimes are similar, and competition between radiative and CHCC processes take place. In p-type materials, the carrier lifetimes are also comparable, however the most effective channels of Auger mechanism are: CHSH process in InGaAs, and CHLH process in HgCdTe. Next, the performance of heterostructure p-on-n photovoltaic devices are considered. Theoretically predicted R_oA values are compared with experimental data reported by other authors. In_0.53Ga_0.47As photodiodes have shown the device performance within a factor often of theoretical limit. However, the performance of InGaAs photodiodes decreases rapidly at intermediate wavelengths due to mismatch-induced defects. HgCdTe photodiodes maintain high performance close to the ultimate limit over a wider range of wavelengths. In this context technology of HgCdTe is considerably advanced since the same lattice parameter of this alloy is the same over wide composition range.     

Infrared tomography of the charge-carrier lifetime and diffusion length in semiconductor-grade silicon ingots

A nondestructive method for measuring the three-dimensional distribution of the charge-carrier lifetime and diffusion length in silicon ingots with a length of up to 1 m and a diameter as large as 0.3 m is presented. Physically, this method is based on infrared crossed-beam probing of an ingot with polished surface areas. One of the beams is repetitively pulsed, has a wavelength of 1.15–1.28 μm, and generates excess charge carriers in a rodlike zone along the beam trajectory in the ingot. Other beams are continuous and have longer wavelengths; these beams detect the temporal and spatial kinetics of excess charge carriers in a small portion of the rodlike zone and in the vicinity of it (the free-carrier absorption is measured). By virtue of the fact that the investigated zone is at a distance from the ingot surface, there is no need to consider the surface recombination. The capabilities of the method are demonstrated for an ingot with known spatial nonuniformity of the charge-carrier lifetime. Spatial resolution amounting to several millimeters was attained. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 1, 2001, pp. 40–47. Original Russian Text Copyright ? 2001 by Akhmetov, Fateev.     

Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

High-quality bonding of 4-inch Ga As and Si is achieved using plasma-activated bonding technology. The influence of Ar plasma activation on surface morphology is discussed. When the annealing temperature is 300 ℃, the bonding strength reaches a maximum of 6.2 MPa. In addition, a thermal stress model for Ga As/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different temperatures. The shape variation of the waf...     

压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响

A variational method combined with solving the force balance equation is adopted to investigate the influence of strain and hydrostatic pressure on electronic mobility in a strained wurtzite AlN/GaN heterojunction by considering the scattering of optical-phonons in a temperature ranges from 250 to 600 K. The effects of conduction band bending and an interface barrier are also considered in our calculation. The results show that electronic mobility decreases with increasing hydrostatic pressure when the electronic density varies from 1.0 × 1012 to 6.5 × 1012 cm-2. The strain at the heterojunction interface also reduces the electronic mobility, whereas the pressure influence becomes weaker when strain is taken into account. The effect of strain and pressure becomes more obvious as temperature increases. The mobility first increases and then decreases significantly, whereas the strain and hydrostatic pressure reduce this trend as the electronic density increases at a given temperature （300 K）. The results also indicate that scattering from half space phonon modes in the channel side plays a dominant role in mobility.     

Effect of carrier recombination mechanisms on the open circuit voltage of n^＋-p GaInAsSb thermophotovoltaic cells

By analyzing the main recombination mechanisms in GaInAsSb materials, the dependences of the dark current density and open circuit voltage in n+-p GaInAsSb thermophotovoltaic cells on the recombination parameters, carrier concentration and cell thickness are calculated. The results show that the dark current mainly comes from p-region, and it is related with the surface and Auger recombinations in low and high carrier concentration ranges, respectively. The surface and Auger recombinations can b...     

Recombination Efficiency and Width in Bilayer Organic Light-emitting Devices

A bilayer model with ohmic anode contact and injection limited cathode contact has been proposed to calculate the recombination efficiency and recombination zone width of the device. The effects of the thickness of hole transport layer and the barriers of organic/organic interface on the combination efficiency and recombination width have been discussed. It is found that： （1） When the electrons are blocked fully and the holes are not blocked significantly at the organic/organic interface, for a given Lh/L, the recombination efficiency increases with increasing the applied voltage, but at a higher applied voltage, the recombination efficiency decreases with increasing Lh/L; （2） The recombination efficiency increases with increasing applied voltage and Hh＇, and when applied voltage and Hh＇ exceed some value, the recombination efficiency appears as a plateau; （3） The recombination width decreases with increasing the applied voltage and Lh/L. This model might explain the relative experiment phenomena.     

Investigation on the InAS1-xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

Undoped and Be-doped InAs1-xSbx (0 ≤ x ≤ 0.71) epitaxial layers were successfully grown on lattice mismatched semi-insulating GaAs (001) substrate with 2° offcut towards 〈 110〉.The effect of the InAs buffer layer on the quality of the grown layers was investigated.Moreover,the influence of Sb/In flux ratio on the Sb fraction was examined.Furthermore,we have studied the defects distribution along the depth of the InAsSb epilayers.In addition,the p-type doping of the grown layers was explored.The InAsSb layers were assessed by X-ray diffraction,Nomarski microscopy,high resolution optical microscopy and Hall effect measurement.The InAs buffer layer was found to be beneficial for the growth of high quality InAsSb layers.The X-ray analysis revealed a full width at half maximum (FWHM) of 571 arcsec for InAs0.87Sb0.13.It is worth noting here that the Hall concentration (mobility) as low (high) as 5 × 1016 cm-3 (25000 cm2V-1s-1) at room temperature,has been acquired.     

INTERDIFFUSION OF THE p-InP WITH Au-Zn,Ti/Au,Pd/Au,Ti/Pd/Au AT INTERFACE AND THEIR ELECTRICAL PROPERTIES

In this report,the interdiffusion between the p-InP with Au-Zn,Ti/Au,Pd/Au and Ti/Pd/Au atinterface have been investigated by Auger electron spectroscopy and electron spectroscopy for chemicalanalysis.The surface morphology for the heat treatment are observed with scanning electron microscopy.It is found that the indiffusion of Au is easier than that of Pd and Ti and the outdiffusion of In is easierthan that of P.The combination state of In and Au is formed during the heat treatment of p-InP/Au-Zn.The effects of the alloying temperature and time on the specific contacts resistance of p-InP/Au-Zn systemare studided.The low specific contact resistance,p_c=2.4-2.7×10~(-4)Ω-cm~2,is obtained when alloying at450℃ for 2 min or at 350℃ for 30 min.These results indicate that the specific contact resistance strongly depend on the“interdiffusiondegree”.The Zn in Au-Zn ahoy distributes onto the most surface layer of p-InP/Au-Zn system duringevaporation process and heat treatment.It may be one of the reasons for the higher specific contactsresistance.     

Quantum cascade lasers: from sketch to mainstream in the mid and far infrared

Electrically-pumped semiconductor lasers based on monolithic chip configuration possess plenty of advantages such as small volume,light weight,long lifetime and stable performance.Nevertheless this type of lasers rely on the interband transition,which sets the bounds for emission wavelength typically below 4μm,and state of the art performance has been attained below 3μm.Attempts to employ small bandgap meterials like antimonide or lead salts ended with poor performance mainly due to imperfect crystal quality and severe Auger recombination.In view of the broad application prospects of infrared spectral range above 3μm,more attention was casted again on the low-dimensional quantum structure materials,such as quantum wells and quantum dots,which have been applied in the near infrared successfully decades ago.     

利用磁控溅射在GaN/蓝宝石衬底上生长ZnO薄膜

Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 ℃. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 ℃ with best crystallization. oindent     

GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot（BQD） structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9×10⁹ to 1.4×10¹⁰ cm^-2. The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.     

The impact of germanium in strained Si/relaxed Si1-xGex on carrier performance in non-degenerate and degenerate regimes

The impact of the fraction of germanium on the carrier performance of two-dimensional strained silicon, which embraces both the non-degenerate and degenerate regimes,is developed.In this model,the Fermi integral of order zero is employed.The impact of the fraction of germanium on the relaxed Si_1-xGe_x substrate（x）,carrier concentration and temperature is reported.It is revealed that the effect of x on the hole concentration is dominant for a normalized Fermi energy of more than three,or in other words the non-degenerate regime.On the contrary, the x gradient has less influence in the degenerate regime.Furthermore,by increasing x there is an increase in the intrinsic velocity,particularly with high carrier concentration and temperature.