用MOCVD方法制备TIO2薄膜：工艺及进展

本文概述了用金属有机物化学气相沉积（ＭＯＣＶＤ）的方法制备了ＴＩＯ２薄膜的原理工艺过程用工艺特点，并指出了最新研研进展和存在的问题以今后及发展方向。     

BaTiO3薄膜的MOCVD方法制备及进展

本文概述了用金属有机物化学气相沉积（ＭＯＣＶＤ）方法制备ＢａＴｉＯ３薄膜的原理和特点,着重介绍低压ＭＯＣＶＤ、等离子体增强ＭＯＣＶＤ和光辅助ＭＯＣＶＤ三种技术在ＢａＴｉＯ３薄膜制备中的应用,并指出了最新进展进行、存在的困难和今后的发展趋势。     

PZT薄膜的MOD制备及形成机理研究

采用金属有机物热分解（ＭＯＤ）工艺在Ｐｔ／Ｔｉ／ＳｉＯ２／Ｓｉ衬底上制备锆钛酸铅（ＰＺＴ）薄膜。ＸＲＤ分析显示薄结晶状态良好,无焦绿石相存在。ＡＥＳ测量表明：薄膜成分沿膜厚均匀分布,膜中无碳存在,表面不富含铅。分析了薄膜的形成机理,安性地解释了晶粒的生长过程。     

反应烧结透气性陶瓷-金属复合材料的相结构分析

通过注浆成型，空气中反应烧结等工艺过程，制备了一种透气性Ｍｕｌｉｔｅ－Ｆｅ２Ｏ３－Ｆｅ陶瓷－金属复合材料，运用ＸＲＤ（高温及常温），ＴＧ－ＤＴＡ等方法，考察了反应烧结过程中的相演变行为及冷至室温后试样心部至表面的相组成变化，对实验结果进行了热力学及动力学分析。     

固体超强酸TiO_2/SO_4~(2-)催化合成富马酸二甲酯

研究了以ＴｉＯ２／ＳＯ２－４固体超强酸催化富马酸与甲醇合成富马酸二甲酯（ＤＭＦ）的反应,探讨了催化剂制备条件,原料配比,反应时间,催化剂用量等工艺参数对ＤＭＦ收率的影响。在适宜的工艺条件下ＤＭＦ收率达到９０％,催化剂的重复使用实验表明ＴｉＯ２／ＳＯ２－４是ＤＭＦ合成的一个较适宜的催化剂     

层状金属氧化物的制备及性质研究

以ＫＮＯ３，Ｃｕ（ＮＯ３）２，ＴｉＯ２为原料，通过固相反应，制备高结晶度Ｋ－Ｃｕ－Ｔｉ层状金属氧化物（简称为Ｋ－Ｃｕ－Ｔｉ－ＬＭＯ），详细考察了制备条件，并筛选出最佳合成条件；经过ＸＲＤ，ＳＥＭ，ＤＴＡ及ＢＥＴ表征，初步探讨了Ｋ－Ｃｕ－Ｔｉ－ＬＭＯ的基本性能。说明该Ｋ－Ｃｕ－Ｔｉ－ＬＭＯ具有较高的热稳定性；在有机大分子催化、石油裂解等方面具有很强的应用前景。     

POD基炭薄膜形成过程的研究

制备出了ＰＯＤ（聚恶二唑）薄膜，测定了ＰＯＤ薄膜试样在热解炭化期间的化学结构和重量变化，研究了ＰＯＤ薄膜的炭行为。随着热解温度的提高，ＰＯＤ大分子在氧二氮茂环处发生断裂，形成具有共轭腈基苯的化合物。新生成的〉Ｃ＝Ｎ－和－Ｎ＝Ｃ＝Ｏ基团继续进行反应，其中－Ｎ＝Ｃ＝Ｏ基团通过耦合反应生成炭化二亚胺（－Ｎ＝Ｃ＝Ｎ－）；再经分子链环化转变成具有吡啶型大共轭结构的多环化合物，继而稠环芳构化生成类石墨芳香族六     

正丁醇钛—乙酸钡水解法合成BaTiO3粉体的研究

本文着重研究了Ｔｉ（Ｏ＾ｎＢａ）４－Ｂａ（ＤＡｃ）２水解法合成高纯超细ＢａＴｉＯ３粉体的制备工艺。借助ＴＧＤＴＡ，ＸＲＤ，ＴＥＭ，ＳＥＭ，ＳＡＸＳ和ＩＣＰ－ＡＥＳ等分析手段，研究了ＰＨ值，Ｂａ／Ｔｉ比和（Ｂａ／Ｔｉ）比，反应温度，浸泡处理等对ＢａＴｉＯ２粉体性能的影响，采用本工艺方法合成的ＢａＴｉＯ３粉体，纯度达９９．８０ｗｔ％，比表面积为６８ｍ＾２／ｇ，一次粒子平均粒径４６．７ｎｍ，二次粒子粒径     

玻璃浸镀彩色膜

用溶胶－凝胶浸镀法在浮法玻璃上制备了ＳｉＯ２－ＭｘＯｙ（Ｍ＝Ｆｅ－Ｃｒ，Ｆｅ－Ｍｎ，Ｃｏ，Ｎｉ）薄膜。测定了镀液粘度与时间的关系及镀膜玻璃的透光率，研究了涂层结构及着色机理。     

电子供体影响Cr（Ⅵ）光还原速度的ESR／全息法研究

分别用电子自旋共振（ＥＳＲ）法和全息法研究了六价铬离子Ｃｒ（Ⅵ）在不同电子供体－二甲基亚砜（ＤＭＳＯ）和Ｎ，Ｎ＇－二甲基甲酰胺（ＤＭＦ）－作用下向三价铬离子Ｃｒ（Ⅲ）的光转换速度。两种方法得到相同的结论：ＤＭＳＯ和ＤＭＦ都不同程度地加速了Ｃｒ（Ⅵ）光致还原速度，ＤＭＳＯ的效果更加显。     

铁电存储器及其疲劳机制的研究

简述了铁电材料的结构及其性能,比较了铁电存储器的各种制备工艺的优缺点及发展前景;同时介绍了目前较为先进的铁电储存器的优良的读,写等特性及国际市场发展动态对当今高度发展的信息社会的重要作用。同时探讨了铁电材料的疲劳机制研究现状及其深入研究的所应遵循的技术路线。     

铁电薄膜的制备工艺及发展趋势

随着陶瓷材料新技术生产发展的需求,多功能的铁电薄膜材料日益引起科研人员的广泛关注,并成为近年来研究的热点。论述了铁电薄膜的发展过程、种类、性能以及应用,着重介绍了铁电薄膜的制备方法,并指出了铁电薄膜的发展趋势。     

Structure Development Study of Pb (Zr, Ti)O3 Thin Films by an Optical Method

Lead zirconate titanates (Pb (Zr_xTi_1–x)O₃ or PZT) are well-known materials with useful ferroelectric properties for nonvolatile memory applications. The device applications usually require processes which form the ferroelectric perovskite phase at low temperatures. Understanding the various aspects of structure development of PZT films is the key to develop low-temperature processes. An effective, versatile, and nondestructive optical method was developed for the study of the structure development in PZT films. Also, models for the structure development were proposed and were verified by this optical method. Using this method, the characteristic temperatures at which both pyrochlore phase and perovskite phase are initiated and completed were identified. The pyrochloreperovskite transformation was initiated at lower temperature and completed faster for the films on the titanium-rich side than those on the zirconium-rich side. In addition, the volume fractions of the perovskite phase were obtained as a function of annealing temperature by this optical method.     

Influence of tensile vs. compressive stress on fatigue of lead zirconate titanate thin films

Novel applications of ferroelectric films require a variety of different substrates, which exert different mechanical stress on the film. This raises the question of reliability of differently stressed films. This work compares the cycling-induced fatigue of the polarization hysteresis of PZT films in different stress states. A tensile stress of +270 MPa, for PZT on fused silica glass, causes gradual degradation, while degradation sets in abruptly under compressive stress of −100 MPa, for PZT on sapphire. The main fatigue mechanism is domain wall pinning on charged defects. Reversible and irreversible domain wall processes in the small- and large-signal permittivity reveal that the fatigue behavior results from a variation of the ferroelectric domain structure. Films under tensile stress contain more 90° domain walls, which get pinned continuously on isolated defects. Compressive stress creates more 180° domain walls, which require formation of defect agglomerates during a certain threshold cycle number for pinning.     

在ITO玻璃衬底上制备锆钛酸铅铁电薄膜

利用射频反应性溅射沉积技术在掺的Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上制备了钙钛矿型Ｐｂ（Ｚｒ,Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜。研究了沉积参量与热处理工艺对铁电薄膜结构和性能的影响。运用Ｘ射线衍射、Ｘ射线光电子能谱和扫描电镜等技术,分析了薄膜的晶体结构、表面形貌和表面元素化学状态。测量了不同处理条件下薄膜的铁电性能。结果表明：在掺Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上可以得到表面无裂纹,化学计量比符合要求的ＰＺ     

SrBi_4Ti_4O_(15)陶瓷薄膜的铁电性能研究

利用溶胶-凝胶法制备了CaxSr1-xBi4Ti4O15铁电陶瓷薄膜,并研究了Ca掺杂量、退火温度以及保温时间对SrBi4Ti4O15陶瓷薄膜铁电性能的影响。研究结果表明,当Ca掺杂含量为0.4%,退火温度为750℃,保温时间为5 min时,样品的铁电性能最好。     

Ink-jet printed BNT thin films with improved ferroelectric properties via annealing in wet air

In this work, an ink-jet printing process based on the sol-gel route was applied to prepare lead-free ferroelectric Na_0.5Bi_0.5TiO₃(BNT) thin films for the first time. Dense and crack-free films with perovskite structure were obtained from a modified precursor solution through multiple printing and pyrolysis processes. The ferroelectric, dielectric and electrical properties were significantly affected by the annealing temperature and atmosphere. The film annealed at 670?°C in wet air showed a high remnant polarization of 24.7?μC/cm² with a low coercive field of 263?kV/cm, the dielectric constant and loss were 185 and 0.1 at 10?kHz, respectively. It was found that wet air was an alternative to reduce oxygen vacancies and enhance properties of ferroelectric films, which can be explained by the defect chemical reaction between water and oxygen vacancies. X-ray photoelectron spectroscopy(XPS) confirmed the decrease of oxygen vacancies after annealing with water presence, with a formation of Ohmic conduction mechanism dominated by charged hydroxyl groups.     

Micro-patterning of PZT thick film by lift-off using ZnO as a sacrificial layer

Micro-pattern of 8.2-μm-thick PZT films was prepared on Pt/Ti/SiO₂/Si (1 0 0) substrate wafer by combining composite sol–gel and a novel lift-off using ZnO as a sacrificial layer. The processes include ZnO sacrificial layer deposition and patterning, PZT film preparation, and final lift-off. The results reveal the micro-pattern was better than that formed by wet etching, the PZT thick films patterned by lift-off possessed similar dielectric characters, better ferroelectric properties, and higher breakdown voltage than those of films patterned by wet etching. The lift-off is suitable for micro-patterning of PZT thick films.     

Synthesis and ferroelectric investigations of poly(vinylidene fluoride‐co‐hexafluoropropylene)‐Mg(NO3)2 films

The free‐standing, flexible, and ferroelectric films of poly(vinylidenefluoride‐co‐hexafluoropropylene) [P(VDF‐HFP)] were prepared by spin coating method. The ferroelectric phase of the films was enhanced by adding magnesium nitrate Mg(NO₃)₂ in different wt % as the additive during the film fabrication. The effects on the structural, compositional, morphological, ferroelectric, dielectric, and leakage current behaviors of the films due to the addition of salt were analyzed. Based on the X‐ray diffraction (XRD) patterns and Fourier Transform Infrared (FTIR) spectra, it is confirmed that the addition of Mg(NO₃)₂ promotes the electroactive β phase that induces the ferroelectric property. The fiber‐like topography of the films exhibits a nodule‐like structure, and the roughness of the films increases by the addition of Mg(NO₃)₂. The ferroelectric studies show the higher polarization values for the composite films than that of the plain P(VDF‐HFP) film. The Piezo‐response force microscope images also confirm the domain switching behavior of the samples. © 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016 , 133, 44008.     

Non–ferroelectric intercalation structure based on Aurivillius phase Bi4Ti3O12: A research arena to achieve high energy storage performance

High density energy capacity is the benchmark of electronic industry, and its improvement is on the way. Here, the BaCaBi₄Ti₅O₁₈ films present high efficient energy storage trait, which is originated from ferroelectric/non–ferroelectric intercalation structure. The emergent of large gradient elastic energy in ferroelectric/non–ferroelectric intercalation structure not only crushes the ferroelectric domains, but also modulates space charges accumulation. Both factors contribute to the high polarization and intense breakdown strength. The contrast experiments were conducted by single ferroelectric intercalated structure Bi₅Ti₃FeO₁₅ films, which show almost non ferroelectric energy storage behavior. The finite element simulations are consistent with the experimental evidences. The present results may facilitate a way for structural design of Aurivillius family, which is capable of acting as remarkable energy storage tasks.