数控电调带通滤波器的设计与制作

设计了一种新型电调谐带通滤波器,研究了数字信号控制滤波器电调谐的技术。采用数模转换器和高压运放实现数字信号与直流电压的转换;以变容二极管作为调谐元件;带通滤波器采用梳状微带线结构,并给出了结构参数。最后制作了一个由8位二进制编码控制的电调谐带通滤波器,其中心频率在300～1200MHz可调。测试结果与理论设计基本吻合。     

数控跳频电调谐滤波器的设计

研究和设计了一种用于跳频通信系统射频前端的数控跳频电调谐滤波器,具有跳频点数多、跳频速度快等优点,并在不同的跳频点都具有良好的电参数指标。介绍了跳频接收机射频前端系统。对各种形式的电调谐滤波器进行性能分析．确定该数控跳频电调谐滤波器设计方案。介绍了该数控跳频电调谐滤波器电路和硬件电路的设计,包括其在ADS中的仿真模型和性能参数。最后对数控跳频电调谐滤波器进行测试,其性能指标完全达到系统设计要求．而且具有很强的实际应用性。     

一种基于ADS的电调谐滤波器的新设计

设计了一种用于跳频通信系统接收机射频前端的UHF频段电调谐滤波器。使用安捷伦公司的 微波仿真软件ADS对电调谐滤波器进行结构设计和参数优化。对制成品的实际测试表明,该 调谐滤波器工作频段为225～400 MHz,3 dB带宽6.5～15 MHz,通带增益24～27 dB,矩形系 数小于6.2,其性能指标完全达到设计要求,在不同的频点都具有良好的电参数指标。所提 方法对电调滤波器的设计具有指导作用。     

电调谐滤波器的研究与设计

介绍了可调谐滤波器的电路结构,解释了设计中采用电感耦合并联谐振电路的具体原因。给出了变容二极管的等效电路,并对由变容二极管构成的滤波器的最大频率可调范围进行了分析。设计制作了一个VHF频段的电调谐滤波器,并使用安捷伦公司的微波电路仿真软件ADS进行仿真,测试表明,此滤波器的频率可调范围为100～260 MHz,插入损耗小于3.8 dB,驻波系数小于1.65。同时在频率的可调范围内对滤波器的插入损耗和矩形系数的变化进行了分析,实验结果和理论分析吻合较好。     

一种电调谐滤波器的设计改进方法

电调谐滤波器因其成本低、体积小和良好的跟踪滤波特性在射频接收领域得到了广泛应用和发展。通过分析耦合因子对调谐回路的影响,介绍了一种电调谐滤波器的设计改进方法,解决了宽频带使用时调谐回路耦合因子变化较大的缺点,与常规设计方法相比,滤波器的使用性能有较大的改善和提高。结合ADS仿真和实际测量,验证了该方法的正确性。     

1.6～30MHz电调滤波器的设计与实现

基于短波通信系统数字化、小型化需求,提出了1.6~30 MHz电调带通滤波器的设计与实现方法。该滤波器采用双极点调谐滤波,变容管并联谐振,用电感进行耦合的线路技术,实现了外部电压控制(电调谐)滤波器频率的要求。采用将滤波器按频率分段设计,波段开关控制信号输入输出,实现了滤波器宽频率范围同步调谐的目的。同时,各分段滤波器设计集成在一块印制板上,滤波器整个体积仅有40 mm×30 mm×8 mm。仿真结果表明,电调滤波器控制简单、调谐方便,性能指标优良,其设计方法可行。对设计完成的实验品进行测试,结果与仿真相吻合,同时进一步验证了数字控制的多样与灵活性。     

基于HFSS设计同轴腔调谐滤波器

同轴腔调谐滤波器在军事通信设备中具有广泛应用.论述了该类滤波器的设计原理,详细分析了腔间耦合孔和输入、输出耦合环的位置和大小的设计,在此基础上应用高频结构仿真软件(HFSS),对L波段调谐滤波器的实例进行仿真设计.结果表明仿真拟合准确,说明应用HFSS仿真软件能够很好的描述调谐滤波器的关键设计内容.     

一种L波段电调微带滤波器的设计

电调谐预选器是现代无线电监测接收机中的关键部件,在射频前端加入窄带预选器可以改善系统的二阶输入截点,提高系统的抗阻塞干扰能力。介绍了基于微带梳状线可变电容加载型电调谐带通滤波器的设计,分析了其理论设计原理,利用ADS软件对该电调滤波器进行了电路电磁相结合的协同仿真。通过实测,该滤波器可调覆盖范围1.5～2.1 GHz,通带插损小于4 dB。对该滤波器的下一步性能改进做了讨论。     

热光Si共振腔型可调谐滤波器

报道了利用Si基键合技术和化学机械抛光工艺制作的垂直结构的Fabry-Perot可调谐滤波器,调谐机理为pn结正向注入电流引起的热光效应.调谐范围可达23nm,响应时间约为300μs,并给出了获得更快响应和更低能耗的热光和电注入可调谐滤波器件结构改进方案.     

热光Si共振腔型可调谐滤波器

报道了利用Si基键合技术和化学机械抛光工艺制作的垂直结构的Fabry- Perot可调谐滤波器,调谐机理为pn结正向注入电流引起的热光效应.调谐范围可达2 3nm,响应时间约为30 0 μs,并给出了获得更快响应和更低能耗的热光和电注入可调谐滤波器件结构改进方案.     

Design of Monolithic Tunable CMOS Band-Pass Filter Using Current Feedback Operational Amplifiers

We propose in this paper a tunable second order band-pass filter based on two CMOS current feedback operational amplifiers (CFOAs). The CFOA includes a novel offset compensation technique. A digital building block is implemented in the proposed band-pass filter to tune its central frequency. An important feature of the adopted tuning procedure is the ability to tune the filter without affecting other characteristics such as gain, phase and quality factor. The band-pass filter topology is validated with a configuration where the central frequency is tuned from 60 MHz to 95 MHz with frequency steps of 5 MHz. Measurements of the offset-compensated CFOA are promising, and simulation results of the CFOA-based band-pass filter using the 0.18 μ m CMOS process confirm our theoretical analysis.     

K-band MMIC active band-pass filters

Two K-band active band-pass filters using 0.15-/spl mu/m GaAs pHEMT technology, with one fixed-frequency and the other tunable, are designed, fabricated, and tested. The fixed-frequency filter has its central frequency at 22.6 GHz, with 900-MHz bandwidth (4%). The tunable filter can be tuned from 19.5 to 21.5 GHz with the same bandwidth. Both circuits have a common size of 1 mm /spl times/ 1 mm. To our knowledge, the tunable filter is the highest frequency tunable active filter ever reported.     

A tunable and reconfigurable MMIC active filter in GaAs technology

The filter presented in this article is an active band-pass filter whose center frequency and bandwidth can be tuned. It is composed of channels inserted into a distributed structure, and the frequency agility is obtained by activating one or more of them. The concept is validated with measurements realized on a 3-channel prototype structure implemented in the United Monolithic Semiconductors (UMS) PPH25 GaAs technology from UMS. This filter is tunable throughout the X and Ku bands. This first prototype yields encouraging results: the center frequency can be tuned between 9.7 and 14 GHz, with an average gain of 10 dB throughout this range and a noise figure between 7 and 11 dB. The filter occupies 13.5 mm² of area and consumes 10.5 mA per active stage from a 4 V supplying voltage. It is designed for wideband and agile receivers.     

Electronically tunable grounded immittance simulators using an EX-CCCII

ABSTRACT

In this paper, electronically tunable grounded immittance simulators are presented. Each of the proposed circuits employs a single Extra X Current Controlled Current Conveyers (EX-CCCII) and a single grounded capacitor. First, two circuits provide lossless positive grounded inductance. These circuits offer different lossless/lossy immittance circuits with some changes in the connection at the Z-terminals of EX-CCCII. The circuits do not require any constraint for component matching and exhibit low parasitic effects. The circuits can be tuned electronically by varying the bias current of EX-CCCII. As application examples, some of the proposed circuits are used to realise a tunable second-order band-pass filter and a tunable high pass filter. The functionality of the proposed immittance simulators is verified through PSPICE simulation using 0.25µm TSMC CMOS technology parameters. The experimental results are also included using commercially available IC’s AD-844.     

变容管电调微波带通滤波器

本文叙述采用梳状线结构的变容管电调微波带通滤波器的设计理论和方法。推导出梳状线带通滤波器的输入、输出耦合网络的参数条件,以补偿带通滤波器的谐振器之间电磁耦合随不同调谐频率的变化;并给出使带通滤波器的绝对带宽或通带回波损耗在调谐频率范围内变化最小时,梳状线谐振器的电长度应满足的相应条件,由此来保证电调带通滤波器在较宽的调谐频率范围内具有较高的通带回波损耗,且保持带通滤波器的响应形状和绝对带宽基本不变。此外,还讨论了由电调变容管的Q值引起的带通滤波器的通带有功损耗问题。文中给出了具体的设计公式。最后,给出了一个L波段变容管电调带通滤波器的研制实例和测试结果。     

Unloaded Q of Single Crystal Yttrium-Iron-Garnet Resonator as a Function of Frequency (Correspondence)

The practical feasibility of constructing magnetically tunable broad-tuning range microwave filters using single crystal yttriumiron-garnet resonators was demonstrated in a recent paper. Experimental results were presented on one- and two- resonator filters which can be tuned by varying a dc magnetic field bias over a full waveguide bandwidth and greater, at the same time maintaining an insertion loss performance which is comparable to mechanically-tuned cavity filters. The crucial parameter of the resonant elements in a band-pass filter is the unloaded Q, Q/sub u/. With a spherical single crystal of yttrium-iron-garnet the Q/sub u/ decreases with frequency below X-band frequencies reaching very low values at frequencies around 2000 Mc.     

半导体光纤环形腔激光器调谐输出特性研究

针对半导体光纤环形腔激光器（ERSLs)的结构特点,考虑到半导体光放大器（SOA）的增益谱特性,引入Lorentz型波长修正项,得到适用于FRSLs的单模行波速率方程,继而通过求解方程,推出了光子流密度分布的解析表达式,为深入研究FRSLs的稳态和动态特性奠定了理论基础。在输出调谐特性的研究中,分别从振荡波长的控制、波长调谐范围的扩展、以及输出光功率的提高等多方面进行了理论模拟分析,力求预测FRSLs的重要特性参量与FRSLs器件参数（分光比、耦合效率、SOA的端面剩余反射率）之间的依赖关系。通过实验获得3dB输出功率带大于36nm的单模调谐,并对理论计算和模拟分析结果进行了验证。     

宽范围可调MEMS集成滤波器的设计与制作

基于MEMS平面螺旋电感和MEMS可调平行板电容设计并制作了一种宽可调范围的集成可调带通滤波器。理论分析并计算了可调滤波器电感和可调电容的取值范围,利用HFSS设计得到各元件结构参数,并使用AnsoftDesigner分析软件对可调滤波器电路进行了模拟仿真。设计得到的可调滤波器中心频率调节范围为400～700MHz,可调率达75%,实现了宽范围可调,3dB相对带宽范围为5%～10%,插入损耗小于5dB,芯片尺寸为20mm×6mm×0.4mm。给出了一套基于MEMS平面工艺的MEMS集成可调滤波器的制作流程,实现了MEMS集成可调滤波器的工艺制作及测试。测试结果表明,获得的可调滤波器实现了通带频率宽范围可调。