ZnO/CdS/Ag复合光催化剂的制备及其催化和抗菌性能

先用水热反应合成六方晶相CdS多层级花状微球并在其表面生长ZnO纳米棒形成均匀的ZnO/CdS复合结构,然后用光还原法将Ag纳米颗粒负载于ZnO纳米棒制备出ZnO/CdS/Ag三元半导体光催化剂,对其进行扫描电镜和透射电镜观察、光电性能测试、活性基团捕获实验以及光催化降解和抗菌性能测试,研究其对亚甲基蓝(MB)的降解和抗菌性能。结果表明：ZnO纳米棒均匀生长在CdS微球表面,CdS晶体没有明显裸露,Ag纳米粒子负载在ZnO纳米棒的表面;ZnO/CdS/Ag三元复合光催化剂有良好的可见光响应、较低的阻抗和较高的光电流密度;ZnO/CdS/Ag复合光催化剂能同时产生羟基和超氧自由基等活性氧基团;ZnO/CdS/Ag三元复合光催化剂对亚甲基蓝(MB)的30 min降解率高于90%;0.25 mg/mL的ZnO/CdS/Ag对革兰氏阴性菌(大肠杆菌)的灭菌率高于96%,对革兰氏阳性菌(金黄色葡萄球菌)能完全灭除。     

静电纺丝制备树皮状ZnO纳米纤维及其光催化降解性能研究

采用静电纺丝制备的一维氧化锌(ZnO)纳米纤维是一种常见的可用于光催化降解有机染料和重金属离子污染物的半导体光催化剂。然而已报道的纳米纤维表面较为光滑，光催化能力有待进一步提高。本研究以硝酸锌为锌源，乙醇和N,N-二甲基甲酰胺作为混合溶剂，利用静电纺丝和高温煅烧合成了表面和内部同时具有丰富孔洞的树皮状ZnO纳米纤维，并研究了其对亚甲基蓝和Cr(Ⅵ)的光催化降解性能。通过调节纺丝液中锌源的浓度，得到了不同结构的ZnO光催化剂。X射线衍射仪、扫描和透射电子显微镜测试结果表明，所制备的ZnO纳米纤维高度结晶，纤维表面均匀分布有片状结构。光催化测试表明，经过3h紫外光照射后，树皮状ZnO纳米纤维对亚甲基蓝和Cr(Ⅵ)的降解效率分别达93.6%和63.4%。     

溶剂热法ZnO微球的制备及其光催化性能

以乙酸锌为锌源,乙二醇和水为溶剂,采用溶剂热法制备纳米氧化锌(ZnO),对其制备过程中的影响因素进行研究。利用SEM、XRD等测试手段对催化材料进行表征分析。结果表明,当溶剂热温度为140℃时,催化活性最高,紫外光照5h后,亚甲基蓝的降解率达到92%。纳米ZnO主要是由纳米棒组成的微球体,其平均晶粒半径约为56.4nm。     

氧化锌/活性炭复合材料的制备与性能表征

将滚压振动磨制备的锌纳米颗粒与普通活性炭按一定比例混合,置于高压反应釜中,在180℃时水热反应24h,制备得到氧化锌/活性炭复合材料(ZnO/AC)。采用X射线衍射、红外光谱、扫描电子显微镜、透射电子显微镜分析了产物的结构和形貌,采用比表面积法(BET)分析了产物的比表面积,最后研究了复合材料对甲基橙的降解特性。结果表明,复合材料是由氧化锌纳米棒在活性炭颗粒表面上包覆生长而形成的,其中氧化锌具有六方纤锌矿结构。复合材料在紫外光条件下对甲基橙的降解性能明显优于其各自单独使用的效果,表现出良好的协同催化效应。     

氧化锌/氧化镁纳米复合材料的制备及其光催化性能研究

采用微波辅助共沉淀法制备了纳米氧化锌/氧化镁(ZnO/MgO)光催化剂,并对催化剂样品进行了X射线衍射、透射电镜、红外光谱以及紫外-可见吸收光谱等表征。以亚甲基蓝(MB)为目标降解物对不同锌镁比的ZnO/MgO催化剂样品及相同方法下合成的ZnO及MgO进行光催化降解实验。结果表明:合成的纳米ZnO/MgO光催化剂由立方相的ZnO和非晶相的MgO组成,其尺寸均匀,在40nm左右,并在紫外区域吸收性能良好。光催化降解MB实验表明,锌镁比为2∶1时ZnO/MgO催化剂的光催化性能最佳。     

Ce掺杂氧化锌的制备及应用研究

以醋酸锌和硝酸铈为原料,采用水热法制备氧化锌(ZnO)纳米棒和铈(Ce)掺杂的Ce-ZnO复合材料。并对样品的物理和光学性能进行了表征。以亚甲基蓝溶液为模拟废水,研究了制得的ZnO复合材料的紫外光催化脱色效能。结果表明,在Ce用量为1.5%(摩尔分数),紫外光照时间为50min条件下,光催化性能最好,Ce-ZnO对100mL浓度为10mg/L的亚甲基蓝(MB)溶液的降解率达到98.6%,经过4次循环,对MB的降解率仍达94.1%,说明材料的光催化稳定性较好。     

纳米氧化锌中空柱的制备及其光催化性能的研究

以醋酸锌和氨水为原料,超声法制备出氧化锌中空柱,采用扫描电镜(SEM)、X射线衍射(XRD)、Uv-vis漫反射对纳米ZnO的形貌、结构进行了表征,以有机染料亚甲基蓝溶液为光催化反应模型降解物,考察纳米ZnO的光催化性能。结果表明:制备出的纳米氧化锌呈中空的柱形,长约2～3μm,直径约300nm,壁厚约40nm,结晶良好。当加入纳米ZnO为0.4g/L,光降解时间为75min,对亚甲基蓝溶液的降解率可达到99.08%。     

纳米ZnO中Al的掺杂及其在水溶液中光催化性能的研究

分别用热物理法制备ZnO、掺Al/Zno和光化学反应沉积制备掺Al/ZnO的纳米粉体材料,采用XRD,TEM等手段研究了ZnO超微粒子结构与形貌.在Al掺杂ZnO纳米晶的水相体系中,通过吸光度、脱色率的测定证实了Al掺杂有效的改善了ZnO对亚甲基蓝(MB)的光催化降解性能.Al掺杂ZnO纳米晶较普通氧化锌有更好的光催化活性.效果最好的是热物理法掺Al/ZnO对亚甲基蓝的降解.     

纳米ZnO/电气石复合粉体的制备及其对亚甲基蓝光催化性能的研究

以NaOH、ZnSO4·7H2O和电气石为原料,采用室温固相法制备纳米ZnO/电气石复合粉体。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)对复合粉体的物相及形貌进行了表征,并考察了复合粉体对亚甲基蓝的光催化降解性能。实验结果表明,纳米ZnO可紧密地包覆在电气石表面形成ZnO/电气石复合粉体。光催化降解实验、紫外-可见漫反射光谱、荧光光谱分析等测试表明,添加电气石粉体可有效地提高ZnO/电气石复合粉体的光吸收能力、荧光发射能力以及对亚甲基蓝的光催化降解性能。     

ZnO/CNTs复合材料的制备、表征及光催化性能

采用水热法制备了一系列氧化锌和碳纳米管的复合材料(ZnO/CNTs),详细考察了碳纳米管的含量对复合材料光催化性能的影响。利用X射线衍射仪、紫外-可见漫反射吸收光谱、扫描电子显微镜、X射线能谱、透射电子显微镜、X射线光电子能谱和氮气吸附-脱附等测试手段对样品的结构、形貌和光学性质进行了表征,并用亚甲基蓝溶液模拟污染物,评价了ZnO/CNTs复合材料的光催化性能。结果表明:添加CNTs提高了ZnO的比表面积,增强了ZnO的可见光吸收。ZnO/CNTs复合材料较纯ZnO具有更高的光催化活性,并且随着CNTs含量的增加,ZnO/CNTs复合材料的光催化活性呈先增加后减小的趋势。当CNTs的含量为0.3%(质量分数)时,ZnO/CNTs复合材料的光催化活性最高,经过50 min光照后,亚甲基蓝的降解率达到了96.2%。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.