脊双模波导滤波器的研究

介绍了一种利用脊谐振器产生的正交准TEM简并模实现脊双模波导滤波器的新方法。通过分析脊谐振器放置在主模传输波导中不同位置的特性,建立了耦合拓扑结构图,实现了三种不同类型的频率响应。利用全波仿真软件AnsoftHFSS,分别以方形和十字交叉这两种脊谐振器作为基本单元,设计出了两腔四阶的脊双模波导滤波器,两个滤波器的插损均小于0.2 dB,回波损耗小于–23 dB,仿真结果与预期吻合。     

SIR结构ACPW滤波器研究

文章提出将SIR谐振器结构应用于非对称共面波导传输线中,设计了一种新型SIR结构非对称共面波导带阻滤波器。通过四个SIR谐振单元在非对称共面波导传输线中级联,有效地改善了滤波器的插损和带宽。结果显示,本滤波器中心频率为1．8GHz,最小插损为0．4dB,相对带宽为33．3％,最大带外抑制为-60dB。具有小体积、低插损、高抑制、宽阻带、易于加工等优点。     

抽头式折叠线SIR带通滤波器设计

提出一种以抽头线方式输入信号的折叠线阶梯阻抗谐振器(SIR),应用低温共烧陶瓷(LTCC)叠层技术实现,可获得大的电容值,缩短谐振腔的长度,实现小型化。分析了输入线抽头的位置对滤波器性能的影响,利用等效的集总电路原理图解释了该结构易在通带右侧出现传输零点的原因。应用二级耦合SIR设计了一个尺寸为2.5mm×2.0mm×0.9mm,中心频率为2.45GHz的带通滤波器,仿真结果显示带内插损小于1.1dB。     

一种共面波导结构双模圆环带通滤波器

提出了一种新型的用共面波导馈线结构实现的双模圆环带通滤波器。该滤波器采用传统的圆环作为谐振器,引入阶梯阻抗作为微扰使其简并模式分离并产生耦合。这样的微扰结构我们称之为环形阶跃阻抗谐振器,它与输入/输出共面波导分别设计在介质基片的两个不同的面上。文中给出了该滤波器的结构及通过仿真和实验获得的性能参数,结果表明该滤波器在带宽为11.4%时通带内的最小插损为1.42dB。     

一种毫米波微带带通滤波器的设计

摘要：基于小反射理论,引入Klopfenstein阻抗渐变线对传统发夹型谐振器结构进行改进,设计了一种相对带宽为8%的结构紧凑型毫米波带通滤波器。采用S参数的多项式综合方法得到耦合矩阵电路模型,利用三维电磁场全波仿真软件HFSS拟合出耦合系数与谐振器间距、外部品质因数与抽头位置的关系曲线,进而提取出耦合矩阵对应滤波器的物理尺寸。实测结果表明：在28.8GHz-31.2GHz频带内,该滤波器的插损小于3.0dB,回波优于-17dB,带外抑制大于40dB@33GHz,测试结果与计算结果吻合较好。     

采用电容耦合式馈线的高温超导滤波器设计

为了获得结构紧凑的滤波器,在设计中采用了螺旋形谐振器和电容耦合式馈线结构.利用集总元件等效电路给出了谐振器与电容耦合式馈线组成的电路的谐振频率和有载Q值的表达式.提出了馈线为电容耦合式时的集总元件带通滤波器等效电路.并基于上述电路在MgO基片上设计和实际制作了一个高性能的高温超导微带线滤波器.该滤波器的中心频率为2542 MHz,相对带宽为0.6%,尺寸仅为10mm×15mm.测试结果表明滤波器的带内插损小于0.1 dB,反射损耗为40.0 dB,验证了该等效电路设计方法的有效性.     

基于新型互补开环谐振器的带通滤波器

展示了一种新型互补开环谐振器(Complementary Split Ring Resonators,CSRR).文章分析了CSRR的运行机理,研究了环缝的半径、径向间距对带通滤波器性能的影响,将该结构用于一个三阶波导带通滤波器的设计.并采用有限元法对这种结构的传输特性进行了仿真.仿真结果表明,所设计的波导带通滤波器带宽满足指标700 MHz,中心频率10 GHz,插损0.5 dB,具有体积小、性能高的特点.     

X波段SIW广义切比雪夫超结构滤波器设计

基于基片集成波导设计了一种正交分裂环谐振器,并证明了该谐振器具有双负特性。将该超结构放置于双层基片集成波导中,得到了具有频率选择特性的四端口耦合结构。将加载正交分裂环谐振器的耦合结构与广义切比雪夫滤波器相结合,设计了一种X波段SIW广义切比雪夫超结构滤波器。仿真结果表明,设计的滤波器满足了中心频率为10.519 GHz、相对带宽为0.25%、通带内的插入损耗小于-1 dB、回波损耗小于-20 dB的技术指标。     

基于LTCC工艺的小型化可调频带通滤波器的设计

设计了一款基于低温共烧陶瓷(LTCC)技术的小型化带通滤波器。采用两谐振器之间的耦合效应,减小了器件的尺寸。在HFSS中建立滤波器模型并仿真,滤波器的中心频率为1.07 GHz,带宽为428 MHz,回波损耗大于22 dB,2 f_0处抑制大于45 dB,整体尺寸仅为6.5 mm×4 mm×0.9 mm。在此滤波器上模拟表贴变容二极管来调节两个谐振器中的电容实现中心频率可调。结果表明,滤波器的中心频率在1.05~1.23 GHz内连续变化,在中心频率变化过程中插损始终小于1 dB,回波损耗始终大于15 dB,2f_0处抑制大于45 dB。     

一种大功率宽带毫米波波导滤波器

介绍了一种毫米波频段的大功率波导滤波器，综合出其四阶耦合矩阵，采用矩形波导膜片方案仿真设计，得到了中心插损小于0.3dB 的宽带波导滤波器。并对该滤波器在常压和真空环境下所能承受的功率进行了分析，试验结果表明该滤波器具有尺寸小，便于加工调试，可用于星载大功率环境的优点。     

基于QMSIW小型化带通滤波器设计

为有效减小X波段基片集成波导(SIW)滤波器的尺寸和插入损耗,提出了基于四分之一模基片集成波导(QMSIW)和共面波导(CPW)混合结构的小型化带通滤波器。为了提高滤波器的选择性和带外抑制,将两个CPW合并到两个级联的QMSIW谐振器中,由于两个CPW谐振器之间的耦合是电耦合,有助于产生两个传输零点,因而具有较高的选择性。该小型化滤波器尺寸仅为8.1 mm×15.4 mm,中心频率为8.7 GHz,相对带宽是16.1%,仿真测得插入损耗为0.83 dB,带外抑制大于40 dB。     

Electronically switchable and tunable coplanar waveguide-slotlineband-pass filters

A coplanar waveguide (CPW)-slotline bandpass filter is described. The circuit allows planar integration of active and passive semiconductor devices both in series and in shunt. A microstrip-to-slotline transition designed to test the filter is also described. Two of the transitions exhibit an insertion loss of less than 1.0 dB over the 2.0-4.0-GHz range. A three-section CPW-slotline bandpass filter demonstrates an insertion loss of less than 0.2 dB over the passband centered at 2.9 GHz. A three-section CPW-slotline switchable bandpass filter integrated with three p-i-n diodes is discussed. It has a 0.7-dB insertion loss in the passband when the p-i-n diodes are off and a 25.0-dB isolation across the entire band when the p-i-n diodes are on. A three-section CPW-slotline varactor-tunable filter integrated with three varactor diodes is presented, showing a 2.0-dB insertion loss and over 20% electronic tuning range. Simple transmission line circuit models are used to optimize the design     

A V-band planar narrow bandpass filter using a new type integrated waveguide transition

A surface mountable planar narrow bandpass filter is proposed and demonstrated at V-band. The filter is constructed using an integrated waveguide in an alumina substrate employing a novel microstrip line to waveguide transition. The insertion loss per one transition is less than 0.1 dB over 43 to 73 GHz. A fabricated three-pole Chebyshev filter exhibits an insertion loss of 3 dB with a 3.3% bandwidth at a center frequency of 62 GHz and the return loss is better than 15 dB in the passband.     

集成宽带折叠半模基片集成波导带通滤波器

 本文提出并设计了一种新型的折叠半模基片集成波导（Folded Half-Mode Substrate Integrated Waveguide: FHMSIW）宽带带通滤波器,并给出了FHMSIW上层金属层槽缝式和中间金属层槽缝式宽带滤波器的仿真和测试结果。相对于半模基片集成波导（Half-Mode Substrate Integrated Waveguide: HMSIW）槽缝式滤波器,由双层PCB制作的FHMSIW槽缝式滤波器的尺寸减小了约一半。同时测试结果和仿真结果表明该宽带滤波器具有损耗小、带外抑制好等特性。     

基于双模谐振器的W波段波导带通滤波器

带通滤波器为现代毫米波系统中进行频率选择的重要器件,而波导滤波器因其低损耗、大功率容量、易加工等优点成为首选。为满足系统的小型化要求,设计了一种基于双模谐振器且具有准椭圆函数响应的W波段波导带通滤波器。该波导带通滤波器结构简单紧凑,由两个双模方形脊谐振腔组成,可获得2 个传输零点及四阶准椭圆函数响应。滤波器样品选取紫铜材质,采用CNC 技术加工制作。经矢量网络分析仪测试,该滤波器通带内插损低,达0.5 dB,3 dB 波束带宽为4.35 %(92.2 ~96.3 GHz),回波损耗优于20 dB,通带外存在两个非对称零点。在全W波段的测试结果与仿真数据高度吻合。     

Design of Interdigitated Capacitors and Their Application to Gallium Arsenide Monolithic Filters

Theoretical expressions for the interelectrode capacitance and conductor losses for an array of microstrip transmission lines are presented. The effect of finite conductor thickness is included in the analysis by introducing equations for the effective width of the transmission lines. Good agreement between theory and experiment is observed up to 18 GHz. Experimental results obtained from a lumped-element GaAs monolithic bandpass filter are in excellent agreement with theory. The filter has 1.5-dB insertion loss at 11.95 GHz and greater than 22-dB loss in the stopband. The filter measures 0.58x 1.3x0.203 mm.     

截止波导带通滤波器的设计

简述了截止波导带通滤波器的基本设计原理,并实现了一款小型化的超窄带带通滤波器。中心频率为3.65 GHz,带宽为30 MHz。体积仅为42 mm×11 mm×7.5 mm,带内插入损耗小于6 dB,带内反射小于-22 dB,阻带的衰减曲线相当陡峭。通过的实验证实了该方法的可行性和正确性。     

Design and performance of coplanar waveguide slotline bandpass filter

This paper describes the work involved in designing a coplanar waveguide -slotline bandpass filter. The filter designed to achieve at least -30dB insertion loss (S₂₁)in the stopband (8 to 8.5; 9.3 to 10 GHz) and less than -0.2 dB in the passband (8.75 to 9.05 GHz), with a centre frequency of 8.9 GHz. The filter and transition were fabricated on 1.27 mm thick RT-Duriod 6010.2 substrate and S-parameters were tested using standard SMA connectors with an HP-8510A network analyser.     

基于HMSIW的宽带带通滤波器设计

为有效减小C波段基片集成波导的尺寸和插入损耗,提出了一种基于半模基片集成波导的紧凑型宽带带通滤波器。该滤波器引入由单个谐振槽和多个谐振槽组成的缺陷微带结构,并对其性能进行了研究。通过HFSS仿真验证,引入的缺陷微带结构,不仅可以减小插入损耗,而且实现传输零点的引入,改善了阻带特性。该方法设计的半模基片集成波导带通滤波器具有集成度高、体积小、成本低、制造方便等优点,在C波段卫星和雷达中得到了广泛的应用。     

Substrate Integrated Waveguide Cross-Coupled Filter With Negative Coupling Structure

Substrate integrated waveguide (SIW) technology provides an attractive solution to the integration of planar and nonplanar circuits by using a planar circuit fabrication process. However, it is usually difficult to implement the negative coupling structure required for the design of compact canonical folded elliptic or quasi-elliptic cross-coupled bandpass filter on the basis of a single-layer SIW. In this paper, a special planar negative coupling scheme including a magnetic coupling post-wall iris and a balanced microstrip line with a pair of metallic via-holes is studied in detail. Two -band fourth-degree cross-coupled bandpass filters without and with source-load coupling using the negative coupling structures are then proposed and designed. The two novel SIW filters having the same center frequency of 20.5 GHz and respective passband width of 700 and 800 MHz are implemented on a single-layer Rogers RT/Duroid 5880 substrate with thickness of 0.508 mm. Measured results of those filters, which exhibit a high selectivity, and a minimum in-band insertion loss of approximately 0.9 and 1.0 dB, respectively, agree well with simulated results.