CDMA/GSM手机在线功能测试

本文提供了一种利用无线测试工具包对CDMA／GSM手机进行功能测试的方法，此工具包是VI Servicee Network开发的产品。手机功能测试包括了很多参数的测量。本文中以CDMA手机的校验测试和GSM手机各特征参数测试为例，验证了我们手机测试系统的有效性和准确性。在CDMA手机的校验测试中，我们主要根据发射器／接收器功率与手机内部寄存器的初值是否一致来判断校验结果的正确性。在GSM手机测试中，我们通过时域、频域和调制域各种参数的测量验证了本手机测试系统的准确性。最后我们介绍了信威公司使用本系统在生产线测试的实例，进一步证明了我们的手机测试系统在大规模生产测试方面广阔的应用前景。     

CDMA／GSM手机在线功能测试

手机功能测试包括了很多参数的测量。文章介绍了一种利用无线测试工具包对CDMA/GSM手机进行功能测试的方法,以CDMA手机的校验测试和GSM手机各特征参数测试为例,验证了手机测试系统的有效性和准确性。在CDMA手机的校验测试中,主要根据发射器/接收器功率与手机内部寄存器的初值是否一致来判断校验结果的正确性。在GSM手机测试中,通过时域、频域和调制域各种参数的测量验证了手机测试系统的准确性。文章最后介绍了一个系统在生产线测试的实例。     

满足速度需求的GSM移动电话测试设备

节约时间和金钱,这是面临尽量降低生产测试时间和成本的每个移动通信手机制造厂商的信条。幸运的是,在测试测量领域他们还有HP公司这一同盟军,这一观点在测试设备供应厂商新的HP8960系列10型E5515A无线通信测试设备得到验证。该系统的第一种产品瞄准全球移动通信系统(GSM)手机测试,同时其灵活的结构使未来产品能支持其它的主要手机标准,如时分多址(TDMA)和码分多址(CDMA)电话。     

产品之窗

HP移动通信测试仪集锦一、HP8920A无线通信综合测试仪HP892OA包含了RF信号源，RF分析仪，音频信号源，音频信号分析仪，信令编解码器，频谱分析仪等22种无线通信产品测试常用的仪表功能，可广泛应用于模拟蜂窝、无线寻呼，集群通信等系统的手机和基站的生产、安装和维护测试，配合HP11807A系列软件，更可对各类无线通信产品进行全面自动的测试。二、HP89225GSM手机综合测试仪世界上80％的GSM手机是用HP8922系列产品测试的，新型HP89225将为GSM手机生产及维修提供高精度，高可靠的测试。其内置的GSM基站仿真器，可全面测试手机…     

手机辐射功率和接收机特性测量技术

手机射频特性测量解决方案包括辐射功率和接收机特性的测量,本文介绍了测试原理和测试系统的组成以及测试过程,同时介绍了在GSM、CDMA等测量中的应用.     

欧洲数字蜂窝通信系统电磁兼容标准（一）

随着GSM无线蜂窝通信系统的迅速普及和迅猛发展,以及人们对于无线终端产品使用安全要求的提高,在欧洲,GSM手机普遍实行了FTA测试认证。近年来,我国的通信产品企业也开始生产GSM手机,同样遇到了FTA测试认证问题,其中一个主要项目就是电磁兼容(EMC)测试,在FTA测试中,EMC测试主要依照了ETS300342标准。本刊将分两期刊登邹东屹对此标准进行介绍的文章,以供读者参考。     

在电波暗室中测试手机辐射发射

1.前言 GSM手机或CDMA手机的电磁兼容性测试、手机的比吸收率(SAR)测量以及手机天线辐射特性研究中的测试,都是在电波暗室中进行的.由于手机无法与基站建立正常的通信链接,需要专门的可以实现部分基站功能的移动通信测试设备或系统模拟器,使得手机处于一定的发射状态.[1Ⅱ2]图1是YD1032-2000标准[1]中给出的移动通信终端电磁兼容测试布置图.非专门从事移动通信设备测试、研究、生产的单位,由于缺少移动通信测试设备或系统模拟器,无法在电波暗室内进行手机辐射发射、手机天线特性等方面的研究工作.     

GSM手机的测试

概述GSM(全球移动通信系统)是由欧盟国家联合研制的一种数字蜂窝移动通信体制。GSM体制由于具有频谱利用率高、系统用户容量大、话音质量好、抗干扰能力强、保密性强等技术优势,我国自1994年开始大规模采用GSM技术建设数字移动通信网,并得到高速发展,到2002年年底我国移动通信GSM手机用户总数已超过2亿。GSM手机用户的每一次呼叫必须按GSM系统分配在指定的载波、时隙上通信,因此在GSM系统内使用手机的技术指标好坏会影响通信质量和网络效率。目前我国GSM手机进网测试执行的是标准YD/T884-1996《900MHz TDMA 数字蜂窝移动通信…     

中兴通讯ZTE189双频手机通过FTA认证

近日,中兴通讯自主研发的全中文双频手机ZTE189一次性通过FTA测试,成为第一款通过FTA测试的、拥有自主知识产权的国产全中文双频手机。 FTA(Full Type Approval——完全型号认证),是由MOU组织(MOU指谅解备忘录,即当初制定GSM规范时,各国专家互相讨论后形成的备忘录)制订的GSM手机测试认证体系,目的在于确保各GSM手机生产厂家的产品能够完全满足GSM手机规范,从而保证GSM网络与终端的正常运行。     

新闻

波导基于Nexperia开发GSM/GPRS/EDGE手机波导公司宣布将开发其第一款基于飞利浦Nexperia蜂窝系统解决方案的EDGE手机。该EDGE系统解决方案包含了飞利浦Nexperia蜂窝基带(PCF5213)、射频SiP(UAA3587)、功率放大器(BGY284E)、电源管理单元(PCF50603)以及其他集成的分立元件及软件等,并已通过全面互操作性测试。借助该方案,波导将利用GSM/GPRS/EDGE手机的市场机会,向用户提供先进的多媒体性能,同时简化产品的开发过程。www.semiconductors.philips.comAMD公布虚拟化平台AMD公司近期公布了Pacifica虚拟技术的主要内容。该…     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.