边界扫描测试技术在雷达BIT电路中的应用

提出了一种采用超大规模集成电路的边界扫描测试技术来设计内建自测试(BIT)电路的方法。此方法利用一片单片机的I/O口线以及超大规模集成电路所具有的边界扫描测试结构来实现对VLST集成电路芯片的故障诊断。     

手机用TFT-LCD驱动控制芯片的测试电路结构设计

文章从分析手机用TFT-LCD驱动控制芯片的测试需求和芯片结构出发，提出了一种针对该芯片的测试电路结构设计方案。该方案采用多条扫描链对芯片内的多个异构的模块进行隔离，保证了各个模块有较高的测试独立性。考虑到内置SRAM的特殊性，采用边界扫描方式进行测试，提高了测试的灵活性，减少了测试电路的面积。电平敏化扫描链的引入．大大提高了Source Driver测试的可控制性。该方案支持手机用TFT-LCD驱动控制芯片的常规以及特殊项目的测试。     

边界扫描测试电路的设计

讨论了边界扫描测试电路的设计方法和电路的基本结构，并针对光纤通信系统中的32：1时分复用芯片设计了边界扫描电路，给出了模拟结果。     

国内要闻

科研进展边界扫描接口控制器电路面市中国航天电子基础技术研究院ASIC室与骊山微电子公司合作,研制成功了支持TTAG边界扫描测试的接口控制器专用集成电路,采用这一电路能产生IEEE1149.1协议信号,并通过1149.1测试总线向被测IC的TTAG测试端口发送此信号,同时接收和处理被测IC的响应信号,以其为核心,可组成从便携式测试仪到PC机为     

高速串行数据接收器IC的可测性设计

集成电路芯片的测试已经成为现代集成电路设计的关键,本方案针对高速串行数据接收器专用集成电路的测试难点,提出了可行的测试电路,通过添加测试引脚、设计专用测试模式以及采用内建自测试等方法有效的解决了该芯片电路的功能测试和电气性能测试。     

边界扫描测试技术的原理及其应用

边界扫描技术是一种应用于数字集成电路器件的标准化可测试性设计方法，他提供了对电路板上元件的功能、互连及相互间影响进行测试的一种新方案，极大地方便了系统电路的测试。自从1990年2月JTAG与TEEE标准化委员会合作提出了“标准测试访问通道与边界扫描结构”的IEEE1149．1—1990标准以后，边界扫描技术得到了迅速发展和应用。利用这种技术，不仅能测试集成电路芯片输入／输出管脚的状态，而且能够测试芯片内部工作情况以及直至引线级的断路和短路故障。对芯片管脚的测试可以提供100％的故障覆盖率，且能实现高精度的故障定位。同时，大大减少了产品的测试时间，缩短了产品的设计和开发周期。边界扫描技术克服了传统针床测试技术的缺点，而且测试费用也相对较低。这在可靠性要求高、排除故障要求时间短的场合非常适用。特别是在武器装备的系统内置测试和维护测试中具有很好的应用前景。本文介绍了边界扫描技术的含义、原理、结构，讨论了边界扫描技术的具体应用。     

基于模拟集成电路BIST的ARMA模块设计

针对模拟集成电路在线测试困难的特点,本文基于BIST结构对模拟集成电路的测试提出了一种新的测试方案,这种算法在测试电路中易于实现,并且容易嵌入到待测芯片中,为模拟集成电路可测试性设计提出了一种新的测试结构和测试算法。     

基于FPGA的边界扫描测试系统设计

随着集成电路技术的快速发展,传统的PCB电路板测试所采用探针的方法已经不现实,边界扫描技术解决了这一传统的PCB板测试的难题。本文设计的边界扫描测试系统可以实现对JTAG的访问以及完成对被测电路板器件IDCODE等方面的测试。实验结果表明,该系统测试方便,简单。     

基于边界扫描技术和Tcl语言的DualSRAM测试设计

集成电路（IC）的迅猛发展促进了测试技术的研究和发展,支持IEEE1149.1标准的边界扫描芯片的广泛应用,使得边界扫描测试技术日益被重视。Tcl语言是一种简明、高效、移植性强的语言,它与边界扫描技术的结合,扩展了芯片测试技术的应用,使得IC的测试更加灵活。本文以DualSRAM的测试设计为例,介绍了以边界扫描技术为基础的Tcl语言的应用,同时根据测试开发中遇到的问题,提出了一些可测性设计（DFT）的建议。     

边界扫描层插入工具确保准确的信号测试

现代集成电路安装了IEEE 1149．1边界扫描电路,以增强信号测试。然而,芯片的速度和尺寸不断增加,导致我们在实施带有可预测计时的功能时遇到了更多问题。同时,我们在芯片边界需要更多电路来管理不同电源。本文将讨论位于英国Ascot的杰尔系统ASIC设计中心目前采用的解决这些问题的方法。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.