测量不确定度评定方法分析与展望

阐述测量不确定度的特点、分类,电压互感器测量不确定度评定,测量方法和数学模型,标准不确定度分量中的不确定度的评定、合成不确定度评定、扩展不确定评定、评定结果的确认。     

机动车光信号装置色度特性的不确定度研究

本文就测定机动车的光信号色度特性时所产生的不确定度进行了分析评定。针对标准灯（A光源）对测量结果的影响进行了讨论。电压、电流仪表精度不低于0．2级,在相同的电压和电流下测量时,其引入的测量不确定度可以忽略不计。测量不确定度主要由测量读数的不重复性引入的不确定度、标准灯引入的不确定度构成。通过计算分析,得出了机动车光信号装置色度不确定度测量结果。     

泄漏电流测试仪试验电压测量结果的不确定度评估

介绍了泄漏电流测试仪试验电压测量结果的不确定度评估,详细分析了影响测量不确定度的原因,计算了各不确定度分量并给出合成标准不确定度。为校准结果的准确性提供了可靠保证。     

耐压击穿电流测量不确定度的评定

该文简单介绍了测量不确定度的基本概念，结合具体工作实践，以耐电压测试仪检定装置击穿电流整定值误差的测量不确定度分析计算为例，对测量结果的不确定度进行评定。     

一种可以测量高频电流的FBG电流互感器

为测量交流电流的,提出了一种由超磁致伸缩材料(GMM)与光纤光栅(FBG)相结合作 为传感器探头的电流互感器,实现了工频电流的测量,在0.33～100 A范围内具有很好的线性度,满量程精度达到0.33%;对 电流互感器的幅频特性进行理论分析和实验研究,计算表明获得GMM材料的谐振频率为46.5kHz,实验测 得电流互感器在5.0kHz范围内具有平坦的的幅频特性,最高可测频 率达到20.4kHz,谐振频率为46.5kHz,适用 于高频电流的测量。     

电子式电流互感器采样电路的计算与测试

电力系统中一个非常重要的高压设备就是电流互感器,在测量电流与继电保护中经常需要使用到电流互感器.传统的电磁式电流互感器虽然具有较高的可靠性、稳定性、丰富的运行经验且原理简单,可是,伴随着电力系统电压等级的不断提高,人们对大容量、远距离互联电网及输电线路也提出了越来越高的要求,电磁式电流互感器已经无法满足人们的需求,此时电子式电流互感器便应运而生了.本文对电子式电流互感器采样电路的计算与测试进行了探讨,可供参考.     

500kV电容式电压互感器测量不确定度评定分析

在电力系统当中,电容式的电压互感器主要是由于在电路工作的过程当中所产生的工频谐振所造成的频率所产生的,在整个过程当中,由于受到外界因素的影响,在很大程度会造成测量结果的失真问题,从而影响其电能质量.在此种情况下就需要对其测量结果的不确定性进行评价,最终对测量的方式进行不断的完善和修改.在本文中首先电容式电压互感器原理及误差检定进行了概述;其次对电容式电压互感器等效电路模型进行了仿真分析;最后提出了500kV电容式电压互感器的误差测量不确定度评定.     

稳态输入电流试验不确定度评定

对安全稳态输入电流实验方法进行了介绍,探讨使用串联标准电阻测量电流的不确定度评定,根据计算结果对实验过程进行分析.     

低压电器交流通断试验中电流测量不确定度的评定

通过分析交流通断试验中电流测量系统的数学模型,指出了输入量的标准不确定度的分量,给出了标准不确定度计算方法,最终计算出扩展不确定度。     

基于开环检测系统的全光纤电流互感器研究

商用化的全光纤电流互感器（FOCT）的误差一般要求小于0.2%,信号处理方法是决定该类传感器测量准确度的关键因素。论述了全光纤电流互感器的光路结构、工作原理、技术优势和干涉信号特征,提出了一种基于数字开环的全光纤电流互感器检测系统以及实现方案,论述了其工作原理和特点,试验结果表明,该检测方法提高了全光纤电流互感器的性能,使其满足了0.2 级测量用电子式电流互感器的准确度要求, 对解决全光纤电流互感器的信号处理、测量准确度和测量灵敏度等问题具有较大的参考价值。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.