重复率运转的闪光灯泵浦掺钛宝石激光器研究

本文简述闪光灯泵浦的掺钛宝石激光器的发展状况和应用前景，描述了我们研制成功的实用型四灯泵浦的掺钛宝石激光器实验装置和实验结果．实验中采用本单位生长的掺钛宝石棒尺寸为φ１００×１６０ｍｍ，有效泵浦长度为１５２ｍｍ；平凹激光谐振腔，腔长３５ｃｍ；自制的四灯聚四氟乙烯聚光筒，漫反射效率９８％；四灯串联泵浦，闪光脉宽为１０μｓ．当输入能量为３２０Ｊ时，激光输出达到１．７Ｊ，激光效率０．６％，重复频率１Ｈｚ，可调谐范围７００～１０００ｎｍ．     

高重复率灯泵调Q掺钛宝石激光器研究

报道了一台高重复率闪光灯泵浦的掺钛宝石激光器．采用自行研制的二步预燃短脉冲激光电源,泵浦φ８ ｍｍ×１６０ ｍｍ掺钛宝石棒,采用电光调Ｑ方法,获得动态激光输出能量 １９５ ｍＪ,动态调Ｑ激光脉冲宽度２０ｎｓ,重复率１０Ｈｚ的激光输出．     

同轴脉冲闪光灯泵浦的掺钛宝石激光器研究

本文叙述了我们用自制的同轴脉冲闪光灯泵浦的掺钛宝石激光器实验装置和实验结果,用电极间距8厘米的同轴闪光灯泵浦φ7×70mm掺钛宝石棒,已获得激光输出300mJ/脉冲,激光效率0.1％,讨论了进一步提高激光效率的方法。     

闪光灯泵浦掺钛宝石激光器阈值能量估算

本文采用四能级模型速率方程分析脉冲闪光灯泵浦的掺钛宝石激光器的阈值能量等激光参数，并将计算结果与实验数据进行了比较，最后讨论了提高激光效率的方法。     

闪光灯泵浦掺钛宝石激光器阈值能量估算

本文采用四能级模型速率方程分析了脉冲闪光灯泵浦的掺钛宝石激光器的阈值能量等激光参数,并将计算结果与实验数据进行了比较,最后讨论了提高激光效率的方法。     

连续钛宝石激光器长波段调谐的实验研究

本文主要报导用钛宝石进行长波段激光调谐的实验结果。钛宝石晶体（φ４×１１．５ｍｍ）置于四镜Ｚ形驻波腔内，由氩离子激光器全线轴向泵浦，激光波长由石英双折射滤光片调谐。在８Ｗ功率泵浦时，钛宝石激光器调谐范围是９０１．６ｎｍ到１０００．０ｎｍ；当泵浦功率为８．９Ｗ时，１００５．０ｎｍ处激光输出超过１５ｍＷ。９８０ｎｍ处钛宝石激光器的阈值为６．６Ｗ，斜率效率为３．７％；当泵浦功率为１０．５Ｗ时，激光连续输     

连续钛宝石激光器长波段调谐的实验研究

本文主要报导用钛宝石进行长波段激光调谐的实验结果。钛宝石晶体（φ４×１１．５ｍｍ）置于四镜Ｚ形驻波腔内，由氩离子激光器全线轴向泵浦，激光波长由石英双折射滤光片调谐。在８Ｗ功率泵浦时，钛宝石激光器调谐范围是９０１．６ｎｍ到１０００．０ｎｍ；当泵浦功率为８．９Ｗ时，１００５．０ｎｍ处激光输出超过１５ｍＷ．９８０ｎｍ处钛宝石激光器的阈值为６．６Ｗ，斜率效率为３．７％；当泵浦功率为１０．５Ｗ时，激光连续输出达１５５ｍＷ。同时还对实验结果和双折射调谐器的设计进行了分析。     

闪光灯泵浦的掺钛宝石激光器研究

报道了闪光灯泵浦的掺钛宝石(Ti~(3+):Al_2O_3)可调谐固体激光器的实验结果。已获得激光输出能量51mJ/脉冲,激光效率大于0.1％,可调谐范围为700—900nm。讨论了改善该激光器性能的途径。     

闪光灯泵浦掺钛宝石激光器的阈值能量估算

闪光灯泵浦掺钛宝石激光器的阈值能量估算李子尧，高国昌，夏宇兴（中国科学院安徽光机所，合肥２３００３１）在过渡金属离子掺杂的晶体中，由于电子能级与晶场之间的强耦合相互作用，能在近红外波段产生宽调谐范围的激光输出。掺钛宝石（Ｔｉｔａｎｉｕｍ－ＤｏｎｅｄＳ...     

小型化脉冲钛宝石激光器的研究

本文报道了一种用倍频ＹＡＧ激光泵浦的小型化的脉冲钛宝石激光器，可输出５３２ｎｍ，绿光和可调谐钛宝石激光．钛宝石激光单脉冲输出最大能量为７７．５ｍＪ、重复率最大可达２０Ｈｚ，最高转换效率为４５％．由单片机控制波长调谐，调谐范围为６７０～８６０ｎｍ（一组镜片）．整个激光器置于一块８００×１４０ｍｍ的铝合金板上。我们还用计算机对脉冲钛宝石激光器的速率方程进行了详细的数值求解，得到了一些有用的结果。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.