数字全息法测量三维形貌的研究

从理论和实验上研究了数字全息用于表面形貌测量的问题。记录采用离轴反射式数字全息系统,再现利用菲涅尔再现算法,然后对再现像使用快速相位解包裹算法,得到物体的三维形貌。实验结果表明,数字全息法可以有效的得到物体的三维形貌。     

三维物体菲涅耳计算全息图的研究

介绍一种用计算全息显示三维物体的方法.记录三维物体在非相干白光照明条件下两个正交方向上不同视角的一系列连续二维像,根据计算机断层成像原理,由这些二维像计算出物体的三维傅立叶频谱,从中提取出一特征傅立叶频谱,用卷积算法计算出在一定传播距离处的菲涅耳衍射分布,用计算全息编码方法制出一张菲涅耳计算全息图,并进行模拟再现,给出了不同再现距离处的再现像.     

光电子技术

TNZ 2003050103三维面形测且数据的计算全息可视化/王辉,李勇,金洪展,应朝福,(2』苏显渝(浙江师范大学)11光学学报一2 003,2a(3)一284-288提出利用计算机制全息进行三维面形测量数据立体重现的技术.首先利用三维面形测量技术同时获取三维物体的强度像和距离像;然后根据三维面形测量数据,设计和制作菲涅耳计算全息图;最后将计算全息和光学全息相结合,以菲涅耳计算全息图的光学再现像为对象,记录光学像全息.这样既解决了计算机制全息术中真实三维物体立体信息数据捕捉的问题,又为三维面形检测提供了一个行之有效的立体重构技术.给出了这种方…     

预放大离轴菲涅耳数字全息显微技术

预放大离轴全息方法引入了高数值孔径显微物镜,放大了物体的精细结构,使得全息图的信息量更容易与CCD的抽样能力相匹配,与同轴全息显微技术相比,只需拍摄一张全息图,操作简单,具有良好的应用价值.依据全息理论和菲涅耳衍射理论,推导出预放大离轴菲涅耳全息显微系统中CCD记录面的二维光波信息.设计了采用平面光波作为参考光的透射式数字全息显微系统,并对系统分辨率进行了分析.利用该系统对新鲜的洋葱细胞样本和百合的茎细胞样本进行了实验研究,得到了其高分辨率的再现像.     

多三维物体菲涅耳变换数字实现方法

提出一种在同一张全息图上记录多个三维物体菲涅耳衍射分布的数字化编解码方法。首先利用一次快速傅里叶变换算法计算三维物体全息面上的物光波复振幅分布;然后对物光波数据预处理以克服频谱面上各三维物体数字频谱的混叠问题;最后控制不同的载频系数制作计算全息干涉图。数字再现通过在全息图数字频谱面的特定位置提取有效频谱分量,再计算离散菲涅耳逆变换的方法实现各原始三维物体的数字重建。仿真实验结果表明所提出的方法实现了不同制作参数的多个三维物体的同时记录,并且具有良好的数字再现质量,全息图制作参数如波长、再现距离、载频系数还可作为密钥,实现多个三维物体的加密存储。     

用波导全息照明器实现三维漫反射物体全息图的白光再现

提出了一种利用波导全息照明器实现三维漫反射物体全息图的白光再现新方法。利用反射全息图的波长选择性和波导全息照明器对菲涅耳全息图的色散补偿，用白光照明获得了清晰的准单色再现像。     

真彩色动态全息图制作的新方法

提出了一种用计算机制作真彩色动态全息图的新方法。获取物体动作的颜色和三维坐标信息,用计算机模拟物光波;基于计算全息的原理和全息图的物像关系,设计分色全息图和体视对的计算参数,算出含体视对的分色菲涅耳全息图;将三分色菲涅耳全息图光学再现,使所有体视对再现像能在某一位置重合;光学方法记录各动作的重合像,制得彩虹全息图。白光下,通过移动双眼位置,能见真彩色动态效果。此方法避免了繁杂的光路,得到了高质量的分色全息图,并解决了再现像难于重合的问题。     

离轴菲涅尔全息图的数字再现

分析了离轴菲涅尔全息网的数字再现过程中照明光的角度参数对再现像质量的影响,提出了通过分析全息图的空间频谱结构自动提取最佳照明光方向参数的方法,进而应用MATLAB实现了数字离轴菲涅尔全息图的自动再现,其中参考光的角度参数是通过分析全息图的空间频谱结构自动提取的,数字再现像面的精确定位则可以通过自动聚焦算法来实现,并利用数字全息记录和再现过程中得到的物距参数准确标定了图像传感器的像素尺寸,给出了有关理论分析及实验结果。     

基于数字微镜器件的计算全息3维显示

为了进一步研究计算全息3维显示的方法,以数字微镜器件为空间光调制器,采用层析法,结合菲涅耳衍射积分算法中的角谱法,探讨了全息图的计算与数字微镜器件参量之间的关系,并利用修正立轴参考光编码的方式,得到了菲涅耳计算全息图。通过对计算全息图进行数值模拟及实验验证,均得到了较好的再现像。结果表明,该方法实现了3维物体的再现,为计算全息3维显示提供了一种有效的方法。     

离轴数字全息记录条件的研究

用振幅全息和菲涅耳衍射理论,分析离轴数字全息记录系统结构参数对数字全息再现的影响,并进行相应的实验验证。理论分析和实验研究结果都表明,如果记录物体和CCD的尺寸固定,记录物体和CCD之间的记录距离将直接影响数字全息再现像的分离状况和系统的分辨率,在保证再现像分离的前提下,缩短物体和CCD之间的距离将有利于数字全息再现像分辨率的提高。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.