文摘

综述了微机电系统/微机械的三维形状加工及极限尺寸加工的研究开发现状.相对硅微细加工和LIGA工艺,不采用掩模版的特种微细加工技术,如微细激光成型、微细电火花加工以及微细机械加工等近年来取得较大进展,在三维微小机械结构成型上有独到优势;同时扫描隧道显微加工技术的开发将微机械向极限尺寸领域推进.微机电系统/微机械的长足发展有赖于融合已有先进技术和交叉学科思想的微机械加工技术的进一步研究开发.     

微机械加工的动向

所谓微机械加工就是制作微机械或者微型装置的微细加工技术。要实现既小型又具有高功能的装置，虽然主要利用制造半导体集成电路的光刻技术，但也需要立体微细加工技术。在材料方面，主要使用能与电路融为一体的硅，也使用晶体之类的压电材料或者其它各种材料。     

微机电系统技术：—硅基微加工

当前流行的硅基做加工技术主要有体微加工（bulkmieromachining）和表面做加工（sutheemic。achini。）两种。它们之间的主要区别为：前者将微机械的运动部件制作在硅衬底里,后者则将微机械运动部件制作在硅衬底表面上的薄膜里”健体微加工技术目前用体微加工技术制作的主要产品有：某些压力传感器、加速度传感器。微泵、微阀、微沟槽等微传感器、微机械和微机械零件等,这些产品的微结构的显著特点是它们都有可运动的悬臂梁或桥、可振动的膜或硅衬底里的沟槽。这些微结构的形成主要利用腐蚀技术和光刻技术相结合,有选择地从硅衬底上挖去…     

微机械的三维微细加工技术

在微机械加工中,三维微细加工是不可缺少的。加工方式有复制掩模图使图形一次形成的方式和用聚焦光束等通过描绘使图形逐次形成的方式。这些方式被应用在立体微细加工或表面微细加工上,复制方式中,开发了作为立体加工的、可高速穿透蚀刻基板的低温高速反应离子蚀刻(RIE)技术和作为表面加工的投影光化学气相淀积(CVD)技术。描绘方式中,开发了作为立体加工的硅激光辅助蚀刻技术和作为表面加工的、可在非平面聚合物上形成金属配线的激光CVD技术。这些技术己被应用在微型传感器与微型致动器的制造上。     

频率式硅电容压力传感器的研究

本文对频率输出的硅微机械结构电容压力传感器进行了研究。利用有限元程序和解析方式对岛－膜硅电容膜片进行了分析。采用硅体型微机械加工技术和集成电路兼容工艺完成了压力元件的制作。对易于ＣＭＯＳ集成的两种新颖的接口电路进行了分析和设计，提高了传感器的性能。     

MEMS麦克风带来超清晰录音功能

微机电系统（MEMS）是一种通过以硅为原材料的、将微电子和微机械技术集于一体的微细加工技术，实现各种机械元件、传感器、触动器和电子电路在硅片上的集成。     

加工对称梁岛结构的微机械加工新技术

本文报道了一种用无掩模腐蚀技术加工对称梁岛结构的微机械加工技术。根据硅台阶在ＫＯＨ无掩模腐下形状和尺寸的变化规律，可以设计制造出一般掩模腐蚀难以形成的微机械对称当今岛结构。由于该技术工艺简单，易于控制，为制作对称梁岛结构的硅 速度传感器提供了新的加工手段。     

微电子机械系统技术及其应用

微电子机械系统技术的特点是可使制品微型化、集成化并以硅作为加工材料。该技术可分为体微机械加工、表面微机械加工、金属微机械加工和复合微机械加工四类。所采用的基础技术主要有:腐蚀技术、硅键合技术、多层无应力薄膜沉积技术、牺牲层技术、LIGA技术以及以上技术的复合,该项技术应用广泛。本文重点介绍在微传感器、微电机、机械滤波器和谐振滤波器等方面的应用,并探讨了发展方向。     

硅基PZT压电薄膜微传感器的结构设计和实验研究

对硅基锆钛酸铅(PZT)压电薄膜微传感器进行了结构和版图设计.根据MEMS加工工艺和标准硅基IC工艺的特点,获得了硅基PZT压电薄膜微悬臂梁结构系统工艺流程中的关键工艺技术和典型工艺条件.对PZT压电薄膜的制备和微细图形化进行了较为详细的实验研究,最后成功地制备出硅基PZT压电薄膜微传感器样品.这对集成化芯片系统的进一步发展打下了良好的实验基础.     

硅基PZT压电薄膜微传感器的结构设计和实验研究

对硅基锆钛酸铅(PZT)压电薄膜微传感器进行了结构和版图设计.根据MEMS加工工艺和标准硅基IC工艺的特点,获得了硅基PZT压电薄膜微悬臂梁结构系统工艺流程中的关键工艺技术和典型工艺条件.对PZT压电薄膜的制备和微细图形化进行了较为详细的实验研究,最后成功地制备出硅基PZT压电薄膜微传感器样品.这对集成化芯片系统的进一步发展打下了良好的实验基础.     

微机械加工技术在传感器制作中的应用

讨论利用微机械加工技术制作传感器的可能性，必然性，介绍了几种在传感器制作中常用的微机械加工工艺，举例说明了用微加工技术制作的角速率传感器及加速度传感器的结构及性能。     

电阻悬浮的MEMS热膜式气体流量传感器设计

设计了一种新型电阻悬浮结构的热膜式气体流量传感器,具有测量精度高、灵敏度好、抗压能力强、微加工工艺简单等特点。采用ANSYS软件对传感器芯片在不同流速下的温度场进行了有限元仿真,得出了上下游温差与流速的关系曲线。通过比较热膜电阻非悬浮与悬浮时的导热损失和压力分布,得到了将热膜电阻悬浮的流量传感器的性能要优于一般传感器的结论,其灵敏度为一般传感器的3.6倍。分析表明,传感器的响应时间仅为0.17 ms,比一般传感器快了好几倍;流速在0～0.5 m/s和0.5～2.5 m/s时,传感器输出信号都有较好的线性度,使其能够应用于小流量和大流量的测量当中;流道高度为150μm时,流量为0～2.7 L/h。根据工艺条件和仿真结果,确定了传感器芯片的结构尺寸和微加工工艺流程。     

微机械加工技术在微传感器中的应用

随着微传感器的广泛应用，微机械加工技术被越来越多地应用于传感器的制造工艺中，从微机械加工技术的关键工艺入手，分别对体微机械加工技术和表面微机械加工技术加以介绍，并介绍了两种分别使用体微机械加工技术和表面微机械加工技术制造的微传感器。     

Integrated multisensor chip

A multipurpose integrated-sensor chip has been fabricated for the simultaneous measurement of physical and chemical variables. The multipurpose chip which measures 8 × 9 mm²contains conventional MOS devices for signal conditioning, array accessing, and output buffering along with the following on-chip sensors: a gas-flow sensor, an infrared-sensing array, a chemical-reaction sensor, cantilever-beam accelerometers, surface-acoustic-wave (SAW) vapor sensors, a tactile sensor array, and an infrared charge-coupled device imager. The multisensing functions of this chip utilize both the pyroelectdc and piezoelectric effects in ZnO thin films. Fabrication of the chip is carried out using a conventional 3-µm Si NMOS process combined with Si micromachining techniques. Compatible fabrication technology and sensor properties are described.     

In the flow with MEMS

Presents an overview of MEMS technology where we look at the different micromachining techniques and the CMOS fabrication process. Next we provide general information about flow sensors, including common applications. We will then analyze the structures used for MEMS flow sensors along with their associated CMOS circuits which can integrate the flow sensor into a smart flow-sensor system     

Micromachined thermally based CMOS microsensors

An integrated circuit (IC) approach to thermal microsensors is presented. The focus is on thermal sensors with on-chip bias and signal conditioning circuits made by industrial complementary metal-oxide-semiconductor (CMOS) IC technology in combination with post-CMOS micromachining or deposition techniques. CMOS materials and physical effects pertinent to thermal sensors are summarized together with basic structures used for microheaters, thermistors, thermocouples, thermal isolation, and heat sinks. As examples of sensors using temperature measurement, we present micromachined CMOS radiation sensors and thermal converters. Examples for sensors based on thermal actuation include thermal flow and pressure sensors, as well as thermally excited microresonators for position and chemical sensing. We also address sensors for the characterization of process-dependent thermal properties of CMOS materials, such as thermal conductivity, Seebeck coefficient, and heat capacity, whose knowledge is indispensable for thermal sensor design. Last, two complete packaged microsystems-a thermoelectric air-flow sensor and a thermoelectric infrared intrusion detector-are reported as demonstrators     

Microfabrication techniques for chemical/biosensors

Microfabrication processes for chemical and biochemical sensors are reviewed. Standard processing steps originating from semiconductor technology are detailed, and specific micromachining steps to fabricate three-dimensional mechanical structures are described. Fundamental chemical sensor principles are briefly abstracted and corresponding state-of-the-art examples of microfabricated chemical sensors and biosensors are given. The advantages and disadvantages of either fabricating devices in IC fabrication technology with additional microfabrication steps, or of using custom-designed nonstandard microfabrication process flows are debated. Finally, monolithic integrated chemical and biological microsensor systems are presented, which include transducer structures and operation circuitry on a single chip.     

Recent developments in micromachined silicon

This paper provides a review, directed at scientists and engineers concerned with microsystems technology, of advances in microelectromechanical systems (MEMS). The emphasis is on silicon technology, where the electrical properties of the material are exploited in circuitry and the mechanical properties are used in sensor and microstructure applications. Developments in surface micromachining are discussed, and applications in sensors, microelectronic devices, vacuum microanalysis systems, microfluidics, and optoelectronic subsystems are reviewed. Some emerging technologies are assessed and promising new research directions are identified     

InGaAs/InP thermoelectric infrared sensor utilizing surface bulkmicromachining technology

A novel InGaAs/InP micromachined thermoelectric sensor is presented. The key features of the reported sensors are the high thermal resistivity and high mobility of InGaAs lattice matched to InP, combined with a value of Seebeck coefficient that is acceptable for such applications. The anisotropic and selective surface bulk micromachining properties of this material system were successfully applied to devices aligned along the (010) orientation on a [100] InP wafer and the details of the technology used for this purpose are presented. A responsivity of 184 V/W and a relative detectivity of 7.1×108 cm Hz^-1/2/W have been demonstrated using this new sensor approach