基于LTE网络eMBMS业务的传输承载方案研究

主要描述了在LTE网络的场景中eMBMS业务承载方案。首先介绍了eMBMS的业务模型和流向特点,其次,分析了主流的几种承载网络实现技术。最后,分析了eMBMS业务的端到端承栽方案。     

基于LTE的eMBMS业务平台架构及部署

主要对eMBMS业务平台技术进行了研究,首先对eMBMS业务平台在网络中的定位及与周边网元的关系进行了梳理,就国际标准对eMBMS业务平台的定义进行了分析,在此基础上结合运营商实际需求梳理了eMBMS管理流程及主要业务场景,提出了符合国际标准及运营商自身发展的eMBMS业务平台架构,并对平台关键技术及部署方式进行了研究.     

PTN网络承载eMBMS业务技术及网络部署方案

eMBMS业务被提上了日程,作为承载eMBMS业务的PTN回传网络同样需考虑支持多播业务。本文针对网络部署进行了分析和研究,并提出了PTN支持多播业务的技术方案。     

LTE中eMBMS技术探讨

本文介绍了LTE系统的中eMBMS技术,深刻描述了eMBMS的逻辑架构,用户面协议架构和控制面协议架构,并对eMBMS的中会话开始及会话结束流程做了详细介绍,最后对MBMS进行了总结并对业务应用前景进行了展望.     

eMBMS的业务应用及商业模式研究

首先介绍了eMBMS业务概念,分析了直播业务和推送业务的具体业务应用场景,其次分析了eMBMS业务的整个产业链、收费模式、内容聚集方式、业务管理需求、业务推广策略,最终提出平台模式是业务初期的最佳商业模式,并结合内容模式的优势提出开发电信运营商统一客户端,加强电信品牌营销.     

LTE eMBMS无线技术研究与关键问题分析

对基于LTE中eMBMS的业务及网络构架进行介绍,结合LTE的技术优势,重点分析eMBMS的空口技术,并对空口资源调度进行深入研究和探讨.     

厂商动态

华为成立首个eMBMS创新中心持续推动LTE解决方案创新8月7日,华为宣布在深圳成立eMBMS(增强型广播多播服务)创新中心,进行eMBMS端到端解决方案的研究,并探索LTE在移动宽带领域的更多应用前景。eMBMS是基于3GPPR9协议规定的增强型广播多播技术,是移动领域最高效的视频承载技术之一。华为eMBMS创新中心聚焦于探索采用eMBMS技术支持视频点播和信息推送等业务,在丰富LTE应用的同时,推动包括芯片、终端、     

5G网络架构下的多播/广播电视融合技术应用

分析5G演进型多播/广播多媒体子系统（evolved Multicast/Broadcast Multimedia Subsystem,eMBMS）电视系统组织结构，阐述业务数据在5G网络中的传输路径、传输方式，在此基础上，针对无线传输、可靠性增强以及动态切换等融合技术进行详细论证，分析eMBMS技术应用特点，提出科学应用方式，有效提升5G+eMBMS技术的融合能力。     

LTE发展带动分组承载网高速变革

LTE业务的迅猛发展推动了分组承载网的新一轮技术革新,其中时钟同步(1588v2)、IP组播传送eMBMS业务、分组承载网加密(IPSec)、分组承载QoS能力等业务成为LTE阶段分组承载网基础业务需求。     

LTEeMBMS带来巨大商机 华为将再投两亿美金助产业腾飞

LTE时代,中国电信携手华为搭建的全球最大规模eMBMS业务体验网,正将整个视频广播技术产业链打通,展现出了广阔的发展前景。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.