一种可自主调频的扩张腔消声器

传递损失是消声器的固有特性,是评判消声器消声性能的重要因素。采用有限元分析法对有插入管的扩张腔消声器传递损失进行研究,指出扩张腔消声器入口插入管与出口插入管之间的相互影响。设计相关实验验证了仿真分析的正确性。根据进出口插入管之间的关系,设计一种可自主调节扩张腔位置来调整插入管长度的结构。调整扩张腔到不同位置的消声器做仿真分析,仿真结果表明,通过该结构的自主调节,实现了扩张腔消声器消声频率的实时调节。提高了该类型消声器的消声效果和消声频率宽度。     

嵌入式Linux系统下音频驱动程序的设计

设计实现了嵌入式Linux系统下的音频驱动程序,该驱动程序采用多通道DMA传输以及乒乓缓冲区的传输模式,支持音频的播放和录音功能.同时.该驱动程序能够根据采样频率自动调整缓冲区的大小和数量,从而提高了音频处理的实时性能.     

基于SOPC的数字示波器的设计与实现

基于SOPC的数字示波器,结合FPGA和软核NIOSⅡ的优势,采用实时采样和等时效采样两种方法实现对较高频率的测量,系统结构设计中尽量采用低耗时的数据传输方式并充分利用DE1中的资源,采用VGA方式显示波形.该系统测量频率范围为10 Hz～1.5 MHz,实时采样速率≤1 Msample/s,等效采样速率≥200 Msample/s,该系统实现了采样频率的自动调整、数据存储等功能,并具有高速、实时、高频测量准确可靠、便携等特点,具有很好的性能与实用性.     

基于DDS+PLL的低相噪频率合成器设计

为了解决传统信号源输出信号种类单一、频率固定、实时调节能力差、噪声大等问题，设计了基于DDS和PLL的频率合成器，该频率合成器以FPGA为控制单元，选用DDS芯片AD9910，以及低噪声数字鉴相芯片ADF4108，用DDS直接激励PLL，能够稳定输出高达2.85ＧＨｚ的信号，该频率合成器具有多种波形输出，频率、相位可变，可实时调频调相等功能。经测 试，相位噪声优于-116ｄＢｃ/Ｈｚ＠1ＭＨｚ，满足实际应用需求。     

空间相机多功能调焦偏流控制系统

为了在地面配合检测空间相机最佳焦面位置,协助分析偏流角实时调整对相机图像质量的影响,配合调焦偏流机构的老练实验,提出了一种多功能调焦偏流控制及其液晶显示系统。介绍了系统的构成及工作原理,对系统进行了设计和实验验证。实验结果表明,所设计的系统完全满足空间相机地面检测过程中对调焦偏流的控制要求:可以控制调焦电机以频率33Hz或1kHz运行,调焦机构可调整范围为-2～2mm,闭环控制误差不大于1.2μm;可以控制偏流电机以频率33Hz或666Hz运行,偏流机构可调整范围为-3°～3°,闭环控制误差不大于0.012°。电机运行方向、频率、目标位置可设置,可在液晶屏上显示出系统的状态和参数。     

一种优化的频率驾驭算法研究

为满足各应用领域对高精度时间性能不断提升的需求,该文设计实现了一种迭代的优化频率驾驭算法,主要分为纸面时间计算和实际物理信号实现两个部分。其中纸面时间计算采用ALGOS算法,利用实时原子钟数据和Circular T公报数据计算获得准确可靠的时间尺度,保障了驾驭参考的准确性和实时性。实时物理信号实现采用最优二次型高斯控制算法与Kalman算法综合,通过实时调整参数,计算出最优的频率驾驭量,将该驾驭量输送至频率调整设备,最终实现高精度时间信号的输出,整个驾驭系统是闭环的。该文基于我国时间基准保持系统和原子钟组,搭建试验平台,采用该算法对一台氢钟进行为期140天的频率驾驭,最终对输出的物理信号进行性能评估。试验结果表明,该算法有效提高了驾驭后物理信号的准确度和稳定度,驾驭后信号与国际标准时间协调世界时(UTC)相比,相位偏差保持在±3 ns以内,且30天稳定度优于5×10–16。     

一种优化的频率驾驭算法研究

为满足各应用领域对高精度时间性能不断提升的需求,该文设计实现了一种迭代的优化频率驾驭算法,主要分为纸面时间计算和实际物理信号实现两个部分。其中纸面时间计算采用ALGOS算法,利用实时原子钟数据和Circular T公报数据计算获得准确可靠的时间尺度,保障了驾驭参考的准确性和实时性。实时物理信号实现采用最优二次型高斯控制算法与Kalman算法综合,通过实时调整参数,计算出最优的频率驾驭量,将该驾驭量输送至频率调整设备,最终实现高精度时间信号的输出,整个驾驭系统是闭环的。该文基于我国时间基准保持系统和原子钟组,搭建试验平台,采用该算法对一台氢钟进行为期140天的频率驾驭,最终对输出的物理信号进行性能评估。试验结果表明,该算法有效提高了驾驭后物理信号的准确度和稳定度,驾驭后信号与国际标准时间协调世界时(UTC)相比,相位偏差保持在±3 ns以内,且30天稳定度优于5×10–16。     

数字式智能毫伏表的设计与研究

本文主要介绍了一种智能型超高频毫伏表的设计。设计以单片机8031为核心用来处理数据,控制整个仪表的工作。该仪表可进行多次采样,并且能够实时显示信号的电压和频率值,同时可拟合出各段电压的曲线并进行自动校正,使仪表的测量精度和灵敏度都得到了大大的提高。     

基于AD9835的高压射频信号源设计

给出了一种基于DDSAD9835的高压射频信号源的设计.该高压射频信号源频率为100 kHz-2MHz,调整步长1Hz,最大幅度可迭1200Vp-P,且幅值频率均可调节.介绍了AD9835串行加载程序的方法和模拟信号放大的电路.该高压射频信号源性能可靠、结构简洁、成本低.     

基于DDS的超声换能器频率跟踪系统

设计并实现了一种超声换能器频率跟踪系统.该系统采用直接数字合成器(DDS)作为频率调整和信号产生的器件;采用可编程逻辑器件(CPLD)完成相位比较和DDS控制,频率跟踪的响应速度快;单片机作为系统的控制核心,对反馈电流进行实时监控,并在此基础上实现了先扫频后跟踪的策略以及自动解锁控制,使系统有良好的适应性和可靠性.该系统已在超声换能器的实用产品样机上应用,取得了良好的效果.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.