彩色AC-PDP扫描驱动控制时序的FPGA实现研究

针对传统彩色AC-PDP扫描驱动控制电路8子场地址显示分离（ADs）驱动方式存在的缺陷,采用分割和优化子场排列顺序的ADS驱动设计方法。给出了基于现场可编程门阵列（FPGA）器件的PDP扫描驱动控制电路的结构、原理及相应Verilog HDL后仿真波形,成功实现了对富士通42寸PDP显示屏的扫描驱动控制,有效改善了动态伪轮廓现象。     

亚成像系统中的实时图像分割与识别

研究了亚成像系统中 的目标识别方式，利用图像分割识别方式对玫瑰扫描图形进行处理，分析了利用自适应阈值进行实时图像分割的方法，并对外场实讨论。     

卫星间光通信中多场扫描捕获的仿真优化

在实际的卫星间光通信中，为保证对目标进行确定性捕获，需要采用多场扫描方式。多场扫描范围是多场扫描捕获的关键性参数，需要进行详细的分析。在已经建立的卫星光通信单场捕获模型的基础上，首先对卫星间光通信的多场捕获扫描问题进行了理论分析和模型建立，并以此为依据对多场扫描中的扫描范围的确定进行了研究。分析结果表明，为获得最短的总平均捕获时间需要对扫描范围进行最优化选择。为了便于工程应用，对此问题进行了数值仿真，基于仿真结果给出了多场扫描捕获中最优化扫描范围的确定经验公式。     

SEM编程扫描信号发生器

本编程扫描信号发生器是为KYKY2000型扫描电子显微镜开发研制的。其主要特点是除了输出送往电镜镜筒及照相CRT的模拟扫描信号外,还输出送往图象存贮器的数字地址信号。发生器的各种扫描方式及状态完全由软件程序来控制,使硬件结构大大简化,且便于与主计算机通讯,实现各种自动控制功能。此编程扫描发生器的核心是一块Z80微机板,它有自己的RAM和ROM,存放一些控制程序和参数。使用一个可编程定时器,产生各种扫描方式下的数字扫描信号,再经D/A变换而成镜筒和照相CRT所需要的模拟信号形式。扫描方式有面、点、线、选区、分割、双放及分割选区等,还可以实现编     

三维数据场在扫描式体显示器中的可视化

基于双螺旋屏幕扫描式的体显示系统,设计并实现了一种面向真实立体空间的三维数据场可视化方法。利用双螺旋屏幕的旋转运动扫描出均质稳定的图像空间,渲染过程中将规则的三维离散数据场分割成一组间隔均匀的螺旋切片,采用分层体绘制方法将这些数据切片渲染成一系列单独的切片图像。切片图像序列通过高频投影方式依次投射到图像空间,采用多线程技术实现投影时序与屏幕运动之间的同步机制,最终完整的三维图像被周期性地逐层扫描显示出来。实验结果表明,该方法输出的空间图像均匀清晰,呈现自然的立体状态,保留了固有的三维尺度,可以环绕显示器提供全方位的观察自由度。     

基于最大熵法的雷达图像分割

介绍了雷达扫描的视频图像中的目标提取方法.首先需要在雷达扫描图像中将回波目标从信号的背景噪声中分割出来,笔者认为基于阈值分割的方法是一种适合文中提到的雷达扫描视频图像分割的方法,并且简单易于工程实现.文中利用最大熵的阈值分割法将目标从雷达图像中分割出来,这种方法较其它阈值分割法更适合于应用在文中提到的雷达扫描视频图像中.     

CS54E—2—AV型彩色电视接收机场扫描电路设计

本文提出场扫描电路一种新的供电方式,即用一组低压电源完成场扫描电路正程低压供电和逆程高压供电。     

键盘扫描／液晶显示驱动器NJU6435及软件设计

新日本无线株式会社生产的时分割液晶显示驱动及键盘扫描集成电路ＮＪＵ６４３５有２分割、３分割两种显示驱动方式。文章主要介绍３分割的驱动器ＮＪＵ６４３５Ｆ的特点、内部结构、操作时序和使用方法。说明ＮＪＵ６４３５Ｆ与８０３１单片机构成的一个简单的键盘、液晶显示系统，并给出了键盘操作和液晶显示软件。     

创维双频／逐行扫描5M10机芯系列彩电电路分析（六）

对于具有倍场/逐行扫描功能的5M10机芯系列彩电，具有相互转换的功能，用倍场扫描方式消除大面积闪烁，使图像稳定；用逐行扫描彻底消除行间闪烁。下面分别对倍场和逐行两种扫描方式的工作原理和类型作以定性的说明。     

视频对象分割中基于Gibbs随机场模型的时空分割结合方法

本文提出了一种基于Gibbs随机场模型的时空分割结合方法 ,用于视频对象的分割 .该方法为每一帧图像的分割模板建立Gibbs随机场模型 ,将时间域分割结果作为初始标记场 ,空间域的分割结果作为一个图像观察场 ,然后利用Gibbs模型的约束条件将二者结合起来 ,得到该帧最后的分割标记场 .实验结果表明 ,这种时空结合方法可以较好地避免以往的比重法过分依赖于空间域分割精度的问题 .     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.