TD-SCDMA/TD-LTE协同优化方法研究

为应对移动互联网带来的新挑战,带动业务收入增长,运营商已经全面开展了流量经营的相关工作。分析了流量经营的典型业务场景,结合智能管道与智能运营双核心模型,提出了一种面向业务的流量经营解决方案,该方案主要由系统组网、系统架构和相关接口构成,并给出了方案的实现机制和流程。工程试点应用结果表明,该方案能有效支撑运营商实现流量经营。     

面向业务的流量经营解决方案研究

为应对移动互联网带来的新挑战,带动业务收入增长,运营商已经全面开展了流量经营的相关工作。分析了流量经营的典型业务场景,结合智能管道与智能运营双核心模型,提出了一种面向业务的流量经营解决方案,该方案主要由系统组网、系统架构和相关接口构成,并给出了方案的实现机制和流程。工程试点应用结果表明,该方案能有效支撑运营商实现流量经营。     

国际运营商流量经营模式变革研究

当前移动互联网迅猛发展,智能终端呈爆发式增长,移动业务层出不穷,为电信运营商带来了巨大流量,但是运营商并没有实现收益的同步增长,电信运营商投入与收入的剪刀差日益扩大。为此,国际运营商纷纷采取不同措施,应对流量的增长,并力图提升流量的价值。本文分析了国际运营商的应对措施,提出了电信运营商流量经营的CTR模型,为国内电信运营商流量经营模式转型提供借鉴和参考。     

实现流量经营的智能管道与智能运营双核模型

为顺应移动互联网的发展趋势,带动业务收入增长,运营商全面推进流量经营的工作势在必行.分析了业界流量经营的典型业务场景,提出了一种实现流量经营的智能管道与智能运营双核心模型,该模型主要由管道控制网元及经营平台网元构成,并给出了模型实现机制.工程试点应用结果表明,该模型能有效支撑运营商实现流量经营.     

移动互联网流量经营分析系统方案研究

结合电信运营商对移动互联网流量经营的实际需求,通过对流量分析目标、系统技术架构、系统功能架构、平台组网方案等方面进行分析,提出移动互联网流量经营分析系统建设方案,该系统可对用户访问移动互联网行为进行分析,从而展开精细化流量经营,提升流量价值。     

移动互联网下运营商数据运营策略的转型分析

面对移动互联网时代移动流量的爆炸式增长,指出了电信运营商数据运营策略转型应对的重要性。首先分析了传统运营商面临的挑战与本身流量数据经营中存在的问题,然后提出了电信运营商数据运营策略的转型应对方案,指出运营商需优化网络,构建大数据挖掘为背景的精细化流量经营。     

移动互联网时代的流量控制和经营

移动互联网时代各种新型数据应用流量爆炸式增长,流量控制和经营成为电信运营商重点关注的焦点议题。本文分析了移动互联网流量控制技术方案,包括无线接入和核心网、IP承载网、IDC流量控制和CDN流量分发,提出了运营商移动互联网流量经营管理措施。     

基于流量经营的电信运营商智能管道构建研究

电信运营商重组后,市场竞争日益激烈,价格战层出不穷,电信行业价值持续走低,电信运营商从话务经营向流量经营转型应运而生.本文指出流量经营已是运营商竞争博弈和价值提升的关键,以智能管道促进流量经营发展势在必行.最后,文章提出从加强基础传输设施建设,锻造面向客户需求的流量分析与运营能力,创新商业模式等方面来探讨基于流量经营的电信运营商智能管道的构建.     

基于cdma 2000 EV-DO过载控制策略的研究

在智能管道和聚合平台之上的"流量经营",目前已成为各大通信运营商全面转型的全新命题。中国电信也顺应形势,深化转型,释放流量价值。其中,空口如何让cdma 2000 EV-DO的流量得到用户的充分使用成为流量经营的关键和难点所在。通过对EV-DO网络的空口过载控制策略进行研究,结合现网流量使用情况分析提出释放流量的优化方案,最后应用于重庆电信EV-DO网络实施验证,得出结论。     

运营商以流量经营策略摆脱“管道化”

当前,国内运营商在流量经营方面已经取得显著成效,然而要彻底摆脱移动互联网时代"管道商"的角色、实现收入利润的有效增长仍然任重道远,需要遵循移动互联网时代的发展趋势和特点,以流量经营为方向,调整各项经营策略,最终实现流量价值的全面提升。在移动互联网时代已经来临之际,电信运营商逐渐被"管道化"。国内的电信运营商为了摆脱这个困境,积极借鉴国外运营商的经验,借鉴互联网企业的运营模式,提出了积极开拓"流量经营"的概念,并逐步开展了流量经营的相关工作。流量经营应运而生     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.