电沉积镧镍合金薄膜的电化学贮氢性能研究

利用在水溶液中电沉积的方法制备了LaNi5贮氢合金薄膜。采用XRD方法研究了贮氢合金薄膜在充放电前后相结构的变化，运用扫描电镜观察了合金薄膜的表面形态，通过电化学测试（循环伏安、恒电流充放电）研究其电化学贮氢性能。结果表明，该合金薄膜具有较好的电化学贮氢性能，电化学活性较高，无需活化过程，最高电化学容量可达156mAh／g。     

Ti—Ni非晶合金贮氢薄膜制备及电化学性能研究

利用离子束溅射的方法（ＩＢＳ）制备了Ｔｉ－Ｎｉ非晶合金薄膜,采用ＸＲＤ、ＳＥＭ方法研究了薄膜试样充放电前后的结构和形貌变化,采用电化学方法研究了这种材料的电化学贮氢性能,试样Ｔｉ５０Ｎｉ５０最高电化学容量可达４５８ｍＡｈ／ｇ。引用Ｈａｒｒｉｓ模型估算了Ｔｉ－Ｎｉ非晶合金薄膜的理论电化学贮氢容量,并用以分析实验结果。     

贮氢合金专利

一种制备Mg2Ni贮氢合金的方法；易活化的钛基贮氢合金及其制备方法；AB5型贮氢合金的制备方法；高功率贮氢合金电极及其制备方法。     

TiNi合金表面TiO2薄膜的制备及光充电性能

采用热氧化方法在TiNi合金表面制备了TiO2薄膜，并考察了TiO2／TiNi电极在KOH溶液中的光电化学性能。结果表明，TiNi贮氢合金表面形成的TiO2薄膜为金红石型，结晶度随氧化温度升高逐渐增大；TiO2薄膜结构、光电流和界面阻抗之间存在良好的相关性，700℃制备的TiO2薄膜光响应电流最大，电极阻抗谱与镍氢电池体系合金负极阻抗特征相似，高频区半圆对应于吸附氢的形成，而低频区Warburg线性关系则反映了氢在电极中的固态扩散过程；在光照射下具有特殊的光充电贮氢性能，放电容量从暗态时的5mAh／g提高至光照时的15mAh／g，对光充电反应机理作了初步分析。     

贮氢合金机械合金化制备的研究进展

机械合金化技术（MA）是一种制备材料的新兴工艺，用它可以制备一般方法难以制备的和性能优越的贮氢合金。本文详细概述了近几年来机械合金化技术在贮氢合金制备上的应用状况，并就今后机械合金化技术在贮氢合金制备上的应用研究提出了方向。     

镁基贮氢合金吸放氢动力学研究进展

介绍了纳米晶镁基贮氢合金的制备方法、添加催化剂和稀土元素取代对镁基贮氢合金气态吸放氢性能的影响,总结了镁基贮氢合金吸放氢动力学的研究现状,并就今后镁基贮氢材料的研究提出了一些想法。     

贮氢合金制备工艺对其电化学性能的影响

AB5型贮氢合金是目前国内外MH／Ni电池生产中是耿广泛的负极材料，而贮氢合金的电化学性能是由合金的成分，微观结构和表面状态决定的，本文综述了AB5型贮氢合金制备工艺－熔炼，热处理以及制粉工艺对其化学性能的影响，指出制备工艺对贮氢合金的成分均匀性和微观结构影响很大，而提高贮氢合金电化学性能最有效的方法是通过合金成分优化和采用较优的制备工艺，来获得高容量，长寿命，低价格的贮氢合金。     

元素替代在制备La-Mg-Ni系贮氢电极合金中的应用

元素替代法是贮氢合金研究者常采用的一种提高贮氢合金电化学综合性能的重要研究方法。本文通过对近几年内La-Mg-Ni系贮氢合金的研究现状分析,综述了元素替代法在制备La-Mg-Ni系贮氢电极合金中的应用,并对La-Mg-Ni系贮氢合金将来的发展方向做出了预测。     

ZrCo/Ti储氚复合膜的制备及性能研究

本文利用磁控溅射成功制备了Ti/ZrCo/Ti、ZrCo/Ti/ZrCo/Ti多层复合薄膜,研究了复合薄膜的微观结构与贮氢性能,深入探讨了所制备复合膜作为氘氚中子发生器氚靶部件的应用可能性。结果表明,所制备的多层复合薄膜是由ZrCo相和Ti相组成,各膜层间的界面清晰可辨。相比ZrCo 等单层薄膜,夹层Ti的引入不仅显著提升了复合薄膜的吸氢量,还使薄膜氢化物的具有较高的稳定性。更可喜的是所制备ZrCo/Ti储氚复合膜未发生明显歧化反应。本工作所构建的ZrCo、Ti相互交替的多层复合膜结构,拓展了ZrCo合金的应用领域,可为高容量、高热稳定性新型复合膜氚靶材料的设计开发提供了重要参考。     

镁基贮氢合金的研究及发展

贮氢材料的发展是氢能利用的关键技术，作为新型贮氢材料-镁基贮氢合金，由于其具有超高理论电化学容量的优势而受到全世界瞩目。本文阐述了镁基贮氢合金的电化学性能特点，介绍了镁基贮氢合金成分设计及制备工艺的国内外现状，指出了未来镁基贮氢合金应用研究的重点。     

Effect of hydrogen flow on the properties of hydrogenated amorphous carbon films fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition

The hydrogenated amorphous carbon films (a-C:H, so-called diamond-like carbon, DLC) have exceptional physical and mechanical properties and have wide applications. In the present study, amorphous hydrogenated carbon films (a-C:H) have been deposited on a Si (100) substrate at different hydrogen flow using electron cyclotron resonance chemical vapor deposition (ECR-CVD). The flow of hydrogen changed from 10 sccm to 40 sccm and the flow of acetylene was fixed at 10 sccm. The microstructure and properties of the a-C:H were measured using visible Raman spectra, Fourier transform infrared (FTIR) spectroscopy, UV-VIS spectrometer,surface profilometer and nano-indentation. The results showed that the sp³ content and sp³-CH₂ structure in the amorphous hydrogenated carbon films increased with the hydrogen flow. The deposition rate decreased with the hydrogen flow. The residual stress and the nano-hardness of the amorphous hydrogenated carbon films increased with the hydrogen flow. Consequently, the a-C:H film become more diamond-like with the increase of hydrogen flow.     

Thermoeffusion of hydrogen in a-C : H films prepared by glow discharge

The structure and properties of hydrogen-doped amorphous carbon (a-C : H) films are determined by the hydrogen content and the structure of the hydrogen bonding with the lattice.

Study of the thermal effusion of hydrogen (TEH) provides information concerning both the thermal stability of the films and the chemical bonding of hydrogen.

Wild and Koidl [1] measured the TEH in a-C : H films as a function of the bias potential V_b. They found that as V_b was increased from 50 to 500 V, the TEH threshold temperature increased from 300 to 600 °C. In a study of the thermal stability of a-C : H films prepared by glow discharge, Watanabe and Okumura [2] observed that on heating to 350 °C the thickness and optical gap of the films decreased and at still higher temperatures the films decomposed. Nadler et al. [3] investigated the thermal annealing effect in films prepared by the decomposition of hydrocarbons. On annealing at 500 °C, they observed hydrogen effusion from sp³ states and formation of C=C bonds, accompanied by a decreased transparency of the films.

In an investigation of a-C : H films prepared by r.f. glow discharge, we observed changes in the structure of the amorphous network and of the hydrogen bonding with the lattice as well as in the electronic properties of such films [4]. The data obtained suggest that TEH occurs differently in a-C : H films of different structures. Therefore it would be of interest to experiment on the TEH in a-C : H films.     

ELECTROCHEMICAL PROPERTIES OF THE HYDROGEN ABSORPTION OF AMORPHOUS Ml－Ni ALLOY FILMS

ＥＬＥＣＴＲＯＣＨＥＭＩＣＡＬＰＲＯＰＥＲＴＩＥＳＯＦＴＨＥＨＹＤＲＯＧＥＮＡＢＳＯＲＰＴＩＯＮＯＦＡＭＯＲＰＨＯＵＳＭｌ－ＮｉＡＬＬＯＹＦＩＬＭＳ￥ＨＵＷｅｉｋａｎｇ;ＺＨＡＮＧＹｕｎｓｈｉ;ＳＯＮＧＤｅｙｉｎｇ;ＬＵＯＤａｏｊｕｎ;ＷＡＮＧＹｕｎ...     

THE IMPROVEMENT OF ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS DUE TO HYDROGEN PLASMA CHEMICAL ANNEALING EFFECT

1. IntroductionHydrogenated amorphous carbon (a-C:H) films have been attracted much attentionsince these materials are powerful candidate fOr the next generation of high-perfOrmanceelectronic devices and other vacuum electronic de.ices[l--3]. For cold cathode operationin flat panel display, a large area electron emission with a low operation voltage, stableand high currellt density is required. However, compared with diamond materials, theturn-on electron field of amorphous carbon is still h…     

Deuterated Diamond Like Carbon films (DDLC): Mechanical properties in relation with microstructure

The aim of this work is to study the mechanical properties of Deuterated Diamond Like Carbon (DDLC) in comparison with Diamond Like Carbon (DLC), to clarify the influence of hydrogen in amorphous carbon thin film (a-C:H) of DLC type. For this purpose we substitute hydrogen (H) in the film by its isotope deuterium (D) by replacing CH₄ by CD₄ and their mixture 1:1 in the plasma. To investigate the deuterium role in the film structure, both hydrogenated and deuterated carbon films are deposited onto silicon wafer and glass substrates using a radio frequency PECVD device. All the amorphous carbon thin films are prepared with a negative self-bias voltage in the range of 50 V to 600 V. We obtain thus a wide variation of chemical composition. Single layer is produced with a constant thickness of 200 nm, controlled by X-ray reflectivity. The effects of deposition parameters on mechanical and adhesion properties of the DLC films are investigated using nano-hardness and nano-scratch tests. Chemical compositions are determined by ions and electrons spectroscopies (RBS, ERDA, XPS). We find, among other results, that replacing hydrogen by deuterium in amorphous carbon structure enhanced hardness properties for low self-bias voltage.     

THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiO_x:H

A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiO:H) implanted with erbium is presented. The experimental results show that Er3 luminescence increases with annealing tempera-ture up to 535℃ and then drop sharply. Our work suggests that hydrogen evolution during annealing below 535℃ results in a reduction of defects in the films, and hence an improved Er3 emission.     

电沉积Ni-P非晶合金中氢的扩散

<正> 非晶态Ni-P合金具有优良的耐蚀性能,应用于油田抗H_2S腐蚀已获得良好的效果。H_2S腐蚀本质上是氢致损伤问题。因此,研究氢在电沉积Ni-P非晶态合金中的扩散行为,具有实际意义。对电沉积非晶态Ni-P合金的结构与晶化等已有大量研究,但关于氢在这种合金中扩散的报导较少。     

射频输入功率对类金刚石薄膜性能的影响

为了得到类金刚石薄膜的性质和制备参数之间的对应关系,利用射频等离子体增强化学气相淀积在单晶硅的(100)面上制备了类金刚石薄膜,反应气体是甲烷和氢气的混合气.研究了射频源的输入功率对类金刚石薄膜性能的影响.采用Raman光谱、X射线光电子能谱、原子力显微镜和纳米压痕仪对薄膜的微观结构、表面形貌、硬度和弹性模量进行了研究,结果表明:制备的薄膜具有典型的不定型碳的结构特征、薄膜致密均匀,随着入射功率的提高,薄膜的sp3含量、硬度以及弹性模量先增加后减小,并且在100W时达到最大值,在400W时薄膜出现碳化.     

QUANTUM-CHEMICAL MODIFICATIONS OF SURFACE:NEW METHODS FOR PROTECTING MATERIALS FROM CORROSION

1. IntroductionIn the USA and other developed countries more than 4% of gross national incomeis spent on restoration of different metallic constructions because of metal ..,,.si..ll].Recently it is determined that the amorphous iron alloys have high corrosion resistance.The passivating properties of single--component amorphous metals are not studied at all,due to they are recelltly obtained. The structure of passive steel film wa8 discussed inmany works and the passive film of the iron oxide…     

Hydrogen plasma induced crystallization of Si thin films by remote inductively coupled plasma source assistant pulsed dc twin magnetron sputtering

Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by remote inductively coupled plasma assistant pulsed dc twin magnetron sputtering at temperatures below 300 °C. The formation of μc-Si:H was only found in the environment of hydrogen plasma, where Ar and H₂ mixed gas was used. In pure argon plasma or without the assistance of ICP in the Ar/H₂ gas mixtures, all the samples were amorphous structure. It suggested that ICP hydrogen plasma which enhanced the density and energy of H radicals played the key role in the formation of μc-Si:H films.