两端镜像对称缺陷三元光子晶体的特性研究

运用光学传输矩阵理论,研究了两端镜像对称缺陷层一维三元光子晶体的光传输特性,并比较了一维三元光子晶体与一维二元光子晶体的禁带特性.数值模拟结果得出:一维三元光子晶体的禁带明显宽于二元光子晶体;且在三元光子晶体两端加相同缺陷层后,禁带展宽的同时出现了多个窄的透射峰.考察了影响透射峰的主要因素,缺陷层的折射率越大,透射峰越尖锐;缺陷层的光学厚度在500 nm到800 nm范围内,缺陷层的光学厚度越大,透射峰越尖锐,且向长波方向移动;光子晶体的周期数越大,透射峰越尖锐,且透射峰的个数增加.这种结构可用来实现多通道窄带滤波器,通过调节各个参数可得到所需要的波长以及通道数目的窄带滤波器.     

一种具有放大功能的多通道窄带滤波器设计

设计了传统介质(折射率为n1>0)与激活介质(折射率n2=n0-ki)交替排列组成的一维光子晶体(PC).利用传输矩阵法研究了这种光子晶体的透射光谱.模拟结果显示,n1=1.45,n2=3.8-0.10i时会出现两条半峰全宽约0.6 nm获得增益的透射窄带,并且两条窄带的中心波长只与介质的厚度有关.用M×N个厚度不同的此类光子晶体为单元设计了一种具有放大功能的M×N阵列滤波器.研究了介质厚度和折射率的变化对滤波器通道透射窄带的影响.结果表明,此滤波器在可见光区域和红外光区域分别有M×N个通道,并且通道间隔和窄带透射率的大小都可以通过改变介质参数任意调节,这为设计各种需要的滤波器提供了帮助.     

两端对称缺陷复合光子晶体特性研究

用传输矩阵法计算了两端对称缺陷复合光子晶体的传输特性。计算结果表明：两端对称缺陷复合光子晶体［D（AB）mD］2结构中的禁带出现两个完全共振透射峰。通过控制温度来微小改变光子晶体介电层的厚度,使得完全共振透射峰移动,且各介质厚度的变化与透射峰波长的变化呈良好的线性关系,折射率大的介电层厚度的变化对共振透射峰波长的变化较大。此结果为设计所需要的共振透射峰波长的双通道滤波器提供了理论依据,也为该结构实现热敏开关提供了理论基础。     

两端对称缺陷对对称结构光子晶体透射谱的影响

通过传输矩阵法理论,研究两端对称缺陷C对一维光子晶体ACmB(AB)n(BA)nBCmA透射谱的影响,发现:当无缺陷C时,透射谱符合镜像对称结构光子晶体的透射谱特征。当引入缺陷C后,随着缺陷折射率nC的增大,禁带中的透射峰逐渐变宽的同时向高频方向移动。缺陷周期数m及其光学厚度DC对透射谱的影响,在数值上具有明显的奇偶特性,m为奇数或DC为奇数倍时,禁带中心均出现一个较宽的通带,且通带宽度随着m或DC的增大逐渐变窄,而且通带上方的振荡加快,但通带中心所处频率位置不变;m为偶数或DC为偶数倍时,禁带中心均出现一条细窄缺陷模,且缺陷模的宽度随着m或DC的增大缓慢变窄,但其位置不变;两端对称缺陷对对称结构光子晶体透射谱的调制规律,为光子晶体设计窄带、宽带光学滤波器或光开关等提供指导。     

可调谐双通道光子晶体滤波器的设计

通过对设计出的一维掺杂光子晶体的数值计算和理论分析,得出:双通道透射峰的波长随杂质光学厚度呈线性变化和双通道透射峰的半高宽随光子晶体折射率n2的增加而减小.以此为基础,设计出可调波长范围达140 nm、滤波通道半高宽的可调范围在1～5 nm、滤波通道透射峰值大于0.98的一维光子晶体双通道可调谐滤波器.     

正负折射率含缺陷1维光子晶体多通道滤波器

为了分析结构参量对正负折射率材料1维光子晶体缺陷模的影响,利用传输矩阵法计算了基于正负折射率材料含正折射率缺陷1维光子晶体B（AB）m（ACB）n（AB）mB的透射谱,分析了各参量对该结构1维光子晶体缺陷模的影响,并用波动理论定性分析了多通道滤波器形成的原因。结果表明,在各介质层的光学厚度绝对值都为0/4的情况下,每个禁带中都有n个超窄的透射峰,相邻两个透射峰间距比相同结构下正折射率情况的宽;当n=1时,随着C层介质光学厚度以0/4的k倍增加,透射谱中同一禁带内出现了k条透射峰;当n2时,透射谱中同一禁带内出现了nk条透射峰。该研究结果对可调多通道滤波器的设计和研究有一定的参考价值。     

液晶分子取向对一维光学多层膜光子晶体透射谱的影响

比较研究了液晶分子平行和扭曲排列对TiO2 和SiO2 介质膜交替的一维光子晶体透射谱的影响。向列相液晶平行取向时,光子禁带中出现四个透过峰,中心波长约1 840、1 814、1 466、1 423 nm,加热器件,峰位蓝移,相邻的两个透过峰合二为一。向列相液晶扭曲排列时,光子禁带中出现两个独立透射峰,分别位于1 865、1 489 nm,加热样品峰位蓝移。液晶分子平行排列,液晶层折射率各向异性较明显,光子禁带具有两种偏振模式透过峰。液晶分子扭曲排列,液晶层折射率各向异性不明显,光子禁带只有独立透过峰。加热样品,液晶分子排列变化,引起液晶层有效折射率值改变,透过峰位移动。     

对称型正负交替一维光子晶体超窄带滤波器

构造了(AB)N1(BA)N2对称型正负折射率交替一维光子晶体,并利用传输矩阵法进行数值模拟,研究了这种正负折射率交替一维光子晶体的能带结构与各参数之间的关系.结果表明:当两种材料的光学厚度相同时,该结构光子晶体比传统的光子晶体的带隙大得多,且在主禁带内有极窄的透射带.并利用此透射带,设计了一种在红外波段1550nm窗口3dB带宽可以做到0.000001nm以下,窗口内透过率接近100%的超窄带滤波器.该结构的光子晶体可以用作超窄带滤波器,有望在光通信超密集波分复用系统中获得广泛应用.     

正负材料的一维矩形光子晶体特性研究

对正负折射率材料构成的一维光子晶体,在横向矩形受限的条件下,推出了光波在其中不同模式所满足的条件,并利用特征矩阵法研究了光波不同模式的传播特性。结果表明：介质厚度为半波长时透射峰出现在中心波长处,与正折射率介质构成的光子晶体在中心波长或半波长处出现禁带完全不同;模式数即入射角不大时,透射波基本上具有相同的特性;介质折射率相差越大、周期增加都能使透射波谱宽度变窄。     

液晶分子取向对一维光学多层膜光子晶体透射谱影响

比较研究了液晶分子平行和扭曲排列对TiO2和SiO2介质膜交替的一维光子晶体透射谱的影响。向列相液晶平行取向时,光子禁带中出现四个透过峰,中心波长约1 840、1 814、1 466、1 423 nm,加热器件,峰位蓝移,相邻的两个透过峰合二为一。向列相液晶扭曲排列时,光子禁带中出现两个独立透射峰,分别位于1 865、1 489 nm,加热样品峰位蓝移。液晶分子平行排列,液晶层折射率各向异性较明显,光子禁带具有两种偏振模式透过峰。液晶分子扭曲排列,液晶层折射率各向异性不明显,光子禁带只有独立透过峰。加热样品,液晶分子排列变化,引起液晶层有效折射率值改变,透过峰位移动。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.