基于循环谱的MPSK信号识别

多进制数字相位调制信号（MPSK）是一类载波受抑制的相位调制信号,它们具有相位连续,幅度恒定以及抗干扰性强的特性,在军用和民用通信的很多领域都有广泛的应用,研究分类该类信号具有重要的实际价值。在研究分析MPSK信号谱相关特性的基础上提出一种MPSK信号的子类识别算法,利用MPSK（M≥4）平方降阶的性质,提取出MPSK信号的循环谱在循环频率f=0截面的特征,并根据该特征分类完成调制识别。计算机仿真实验证明了该算法在信噪比高于5dB时调制识别率高于95%。     

雷达信号有意调制的粗分类和细分类识别方法

针对雷达信号脉内有意调制中2类典型调制信号,即相位编码(PSK)信号和调频(FM)信号,提出了一种由粗到细的方法进行脉内识别。首先,对接收到的雷达信号利用其3 dB带宽明显不同的特点,进行类间粗分类,识别出PSK信号和FM信号;然后,针对PSK信号和FM信号类内特征的不同,提出了利用信号的小波脊频特征,来对雷达信号进行类内细分类识别的方法,使PSK信号被细分类为BPSK信号和QPSK信号、FM信号被细分类为LFM信号和NLFM信号,从而完成了典型雷达信号的有意调制的识别。仿真结果表明,在一定信噪比下,此识别方法真实有效。     

基于TMS320C6678的多个同时到达信号脉内调制类型识别

针对雷达信号脉内调制中的5类信号,提出了一种基于改进相位差分的脉内调制类型识别方法.首先,对信号进行滤波处理,并快速识别出单频脉冲;然后,对滤波后的信号相位差分得到瞬时频率,将瞬时频率等分成两段并利用最小二乘法线性拟合,提取两个参数识别出线性调频和双线性调频;其次,对去跳变后的瞬时频率再利用最小二乘线性拟合提取斜率参数识别出复合信号,对剩下的信号平方后计算3 dB带宽内谱线数是否唯一识别出二相编码信号.最后,基于TMS320C6678实现了5类共7个同时到达信号的调制类型识别.仿真分析表明,当信噪比高于0 dB时,5类信号的识别概率优于90％,硬件实验表明,7个同时到达信号的调制类型识别处理时间在87μs以内.     

基于峰度和小波变换的超短波信号调制识别

针对FM,MSK,QPSK三种具体调制方式,由于在高斯白噪声环境中小波变换幅度方差区分MSK,QPSK调制信号效果较差,以及在不同信噪比条件下零中心归一化瞬时幅度谱密度的最大值对FM,MSK和QPSK识别效果的下降,提出利用峰度和基于小波变换特征量的方法对信号分类识别。该方法首先利用峰度进行模拟与数字调制信号的类间识别,然后采用基于小波变换系数提取的特征量对两种数字调制信号进行识别分类。采用决策树分类方法,利用Matlab对该方法进行仿真验证,仿真结果表明该方法具有较好的识别效果。     

卫星通信常用调制方式的自动识别

调制信号的自识别有很多方法,本文提出一种基于谱特征的新方法,这种新的方法可以从信号的功率谱、平方谱还有四次方谱中提取一组特征参数,其最大的好处在于不需要对调制信号进行任何先验情况下可以对卫星通信中常用信号进行自识别。实验结果表明,当信噪比大于5dB时,此方法识别率达96%以上。同时也验证了该方案具有实用性和可行性。     

基于GP分布拟合检验的BPSK/QPSK信号调制识别

针对二进制相移健控(Binary Phase Shift Keying,BPSK)/正交相移键控(Quadrature Phase Shift Keying,QPSK)相位编码信号的调制识别问题,提出了一种基于广义帕雷托(General Pareto,GP)分布拟合优度检验的识别算法。基于极值分布理论,利用观测信号的平方幅度谱构建其超阈值序列,通过检验超阈值序列的分布是否近似服从GP-I分布来实现对BPSK/QPSK调制方式的分类识别。在不同条件下,大量仿真结果证明了所提算法的有效性,并且和已有的调制信号识别算法相比,所提算法具有更好的识别性能。     

信号识别中的决策论分类器改进

调制方式自动识别的目的就是在尽可能少的先验知识前提下,判断出通信信号的调制方式,并估计出相应的调制参数。近年来,许多学术和军事研究机构都将兴趣集中在调制识别算法的研究和开发上。通过对Nandi A K和Azzouz E E所提出特征值的介绍、以及利用特征值对信号进行模拟信号调制方式识别的原理,提出了改进的特征值来取代传统特征值。仿真结果显示,改进的基于决策论的分类方法不但具有较高的识别率,而且相比改进前的分类器具有更快的识别速度。     

QPSK调制信号的同步载波提取

为了在QPSK数字调制系统中恢复QPSK的载波同步信号,以确保接收机能够接收到无失真的数据,在对QPSK调制理论阐述后提出基于DDS的平方环直接提取载波的方法,分析了电路中各个部分的作用和功能,用Matlab软件进行仿真实验,对锁相环提取的载波信号进行分析,在锁相环性能良好的前提下,实现了载波信号的提取。利用Verilog HDL语言对硬件电路进行行为级描述,综合出RTL级电路。     

突发自适应调制信号的调制识别算法研究

针对突发自适应调制信号中的PSK和QAM调制方式识别问题,本文提出了一种能够识别BPSK、QPSK、8PSK以及16QAM、32QAM、64QAM、128QAM、256QAM八种信号类型的盲识别算法。该算法首先对信号的循环平稳性进行了分析和讨论,给出了利用循环高阶累积量的特征实现信号识别分类的理论依据。然后,提出了三种基于循环累积量的特征分别实现了QAM和PSK类间识别、MPSK类内识别以及方形QAM与十字形QAM的识别。最后通过对MQAM信号的瞬时幅度分布特性的深入研究和分析,提出了一种基于瞬时包络平方的方差的特征实现了QAM的类内识别。该算法选择了二叉树支持向量机作为识别分类器,并设计了一种新的识别流程完成了对上述信号调制方式的识别。该算法无需精确同步,对载波相位具有较好的鲁棒性,并能够对中频信号进行识别。仿真实验表明,该算法能够实现在较低信噪比条件下突发信号的识别。      

MQAM信号调制方式盲识别

该文提出了一种MQAM信号调试方式的盲识别算法。算法首先通过信号频谱粗略估计信号载频和带宽,从而进行下变频和低通滤波。然后通过信号包络平方的频谱估算出波特率,结合符号定时完成信号的波特率采样。最终计算MQAM信号矢量图中最小环带的方差,完成调制方式的识别。该MQAM信号调制识别算法无需载频和波特率等先验信息,对载波残余不敏感,没有复杂的迭代过程,可以应用于实际信号的调制识别。仿真表明信噪比在16 dB,码元数目为2400时,对5种QAM信号的识别率达到99%以上,证明了其有效性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.