基于DEFORM-3D的汽车花键轴零件冷挤压工艺参数优化设计

基于有限元模拟技术,应用DEFORM-3D软件对汽车花键轴零件的冷挤压成形过程进行了数值模拟,通过改变工艺参数,分析了凸模运动速度、摩擦系数和凹模锥角对挤压工艺的影响。以成形载荷为评价指标,通过正交试验获得了冷挤压成形最佳工艺参数组合,即正挤压时,凸模速度为12mm·s~(-1),摩擦系数为0.05,凹模锥角为60°;反挤压时凸模速度为12mm·s~(-1),摩擦系数为0.05。根据最佳工艺组合参数,进行了实际生产验证,得到质量合格的制件,为花键类汽车件冷挤压成形工艺的制定提供了参考。     

基于正交试验的某齿轮轴工艺参数优化

齿轮轴成形属于精密成形过程,其预制坯形状对终锻成形质量有至关重要的影响。本文以影响预制坯成形过程中的4个工艺参数——凸模速度、摩擦因数、预锻凸模拐角斜度、预锻凹模斜度为设计变量,终锻成形载荷与坯料充填情况为目标函数,利用正交试验,选用了4因素3水平进行试验方案设计,利用Deform-3d软件分别模拟分析了各个不同试验方案,得到了最佳工艺参数组合,并通过模拟验证该优化方案的正确性。试验结果对生产实际具有一定指导意义。     

工艺参数对T2紫铜微齿轮挤压成形的影响

经过不同热处理工艺的T2紫铜圆柱坯料通过压缩试验测得材料常温下的流动应力应变曲线,利用DEFORM-3D软件对T2紫铜微型齿轮正挤压过程进行了数值模拟,分析了晶粒尺寸、摩擦因数、挤压速度、入模角和挤压比等工艺参数对凸模单位挤压力和材料等效应力应变分布的影响,研究讨论了各参数对微齿轮正挤压成形过程的影响规律。根据模拟结果选取了最优参数组合并在此参数组合下进行了微齿轮挤压模拟试验。结果显示:在该参数组合下(晶粒尺寸为50μm,摩擦因数为0,挤压速度为0.1 mm/s,入模角为30°,挤压比为2.25)凸模稳态挤压力小于其他各组,各特征点最大等效应变、等效应力均较小,材料流动均匀性更好,从而验证了之前模拟结果与分析的正确性。     

凸模形状对杯形构件转模反挤压成形过程的影响规律

通过刚塑性有限元法对AZ80镁合金杯形构件四种不同结构形式的凸模旋转反挤压成形过程进行了数值模拟,分析了凸模形状对成形载荷—行程曲线、应力场和应变场的影响规律;并且研究了不同凸模沟槽锥角对成形过程的影响。结果表明:挤压凸模端面开槽数目越多,轴向载荷就越小、等效应力和等效应变越大;小角度的沟槽锥角的构件等效应变较大。     

铝合金筒体侧向挤压润滑条件分析及润滑剂配比研究

润滑条件对铝合金筒体凸台侧向挤压成形有着重要影响。通过润滑条件对成形等效应变及凸模载荷影响的模拟、分析得出:当摩擦因数增大时,等效应变、筒壁变形和凸模平均载荷值增加,但凸模载荷波动减小。综合分析后确定:当摩擦因数为0.25时,具有较好的挤压效果。水基石墨润滑剂较适合于铝合金的等温挤压,为获得该摩擦因数,制取5种不同石墨含量的润滑剂,通过摩擦试验分析,确定摩擦因数。试验结果表明:当石墨含量为质量分数18%时,该润滑剂的摩擦因数为0.25,此配比较适合于铝合金筒体凸台的侧向挤压成形。     

基于RSM与NSGA-Ⅱ的法兰件挤压成形工艺的多目标优化

通过分析实心法兰的结构特点，运用有限元模拟与响应曲面算法和NSGA-Ⅱ相结合的算法对实心法兰冷挤压成形进行了多目标优化分析。采用DEFORM-3D有限元模拟软件对实心法兰成形过程中的损伤与载荷进行了分析。选取摩擦因数、凹模圆角半径和挤压速度3个工艺参数为影响因素，损伤值与载荷力为优化目标，通过设计响应曲面试验进行仿真模拟。结合NSGA-Ⅱ遗传算法进行多目标优化，对优化解进行仿真试验对比，目标值误差位于合理范围内。工艺参数优化的最终结果为：挤压速度1.46 mm·s^-1、摩擦因数0.05、凹模圆角半径8.00 mm,采用优化后的参数进行模拟试验，结果表明，法兰的最大成形载荷由100 kN降低为50.9 kN,损伤值由1.29减小至0.70,工件的成形质量得到改善。     

磁控排气管挤压成形的分析与参数优化

根据挤压成形理论,分析、制定了磁控排气管挤压成形工艺,采用Deform-3D软件对零件的成形过程进行模拟,应用正交模拟试验和回归试验以及工程试验研究相结合的方法,对微波炉磁控排气管金属冷挤压成形规律进行了研究,对工艺参数进行了优化.确定了模具结构参数的优化组合为:凸模内圆角r1=0.8 mm,凸模外圆角r2=0.8mm,凹模内圆角r3=0.2 mm,凹模外圆角r4=0.8mm.工艺参数的优化方案为:坯料直管长度x1=30nm,坯料锥角x2=120°,摩擦因子x3=0.1,挤压速度x4=180 mm·s-1.实现了薄壁空心杯杆件的复合挤压成形.     

螺伞齿轮冷挤压工艺与试验研究

采用数值模拟和实物挤压试验相结合的方法,对螺伞齿轮挤压工艺进行分析研究。试验结果既说明此方案可行,也验证了数值模拟的可靠性,为工艺方案的优化设计奠定了基础。结合正交试验设计方法和数值模拟技术,以毛坯外圆直径、毛坯内锥直径、凸模分流角和挤压速度4个关键挤压工艺参数作为设计变量,以成形时载荷值最小为目标,对工艺进行了优化。最后通过试验确定最佳方案。     

基于正交试验的活塞销挤压成形工艺研究及模具磨损分析

分析了活塞销的冷挤压成形工艺及凸模的磨损状况,提出两种活塞销冷挤压成形工艺方案,设计了带有限流套的模具结构,解决传统工艺中端面不平度及保证连皮位置在中间位置问题。同时,基于正交试验采用方差分析法和极差分析法,以成形载荷及其凸模磨损量为评判指标,获得最佳工艺参数组合。利用最佳的组合参数来探寻挤压件中损伤因子、等效应变、等效应力、速度场以及折叠角云图优化前后的变化规律。结果表明,活塞销冷挤压成形的最佳工艺参数组合为:下压速度10 m/s,摩擦系数0.1,凸模材料硬度为62 HRC。     

基于数值模拟杯套的温挤压成形工艺研究及模具磨损分析

以研究杯套的温挤压成形工艺及模具磨损分析为目的,设计了带有限流套的模具结构,解决其传统工艺中端面不平度的问题;根据杯套的结构特点,提出了杯套温挤压成形工艺方案;并且基于DEFORM-3D有限元模拟软件对两种不同直径毛坯的分别进行数值模拟。模拟结果显示,?31.8mm的毛坯挤压件成形效果好。基于正交试验采用方差分析法和极差分析法共同分析,以成形载荷,等效应变,凸模磨损量及其凹模磨损量的大小作为评判指标,获得最佳工艺参数组合;参数的最佳组合确定之后,采用最佳的参数组合来探寻不同摩擦系数对成形载荷和不同凸模初始硬度对凸模磨损量以及不同凹模初始硬度对凸模磨损量影响规律;利用最佳的组合参数来探寻挤压件中损伤因子云图、等效应变云图、速度场云图、温度场云图以及折叠角云图与优化前的变化规律。对杯套零件的实际生产及其相似零件的生产都有实际的指导意义,且有助于提高模具寿命,降低试模成本。     

超声辅助对共沉淀法制备富锂锰基正极材料Li[Li_0.144Ni_0.136Co_0.136Mn_0.544]O₂性能影响的研究

通过超声辅助共沉淀法成功制备了富锂锰基正极电极材料,研究了不同的超声时间对材料形貌、结构和电化学性能的影响。研究发现,超声辅助能够使材料颗粒更加均匀,结构更合理,有利于材料电化学性能的提升。当合成前躯体材料超声时间为8h时,复合材料的放电比容量最好,在0.1C的初始放电比容量为327.8 mAh g_-1,均高于未超声的复合材料的265.2 mAh g_-1,1C下循环50圈后放电容量为181.6 mAh g_-1,保持率为84.8%。通过循环伏安法测试和电化学交流阻抗测试,发现超声后的复合材料还原氧化峰电流更大,电荷转移阻抗更小,具有较好的倍率性能。     

Investigation of the microwave dielectric properties of Ca1−xMgxLa4Ti5O17 ceramics for application in coplanar patch antenna

In this paper, the dielectric properties of Ca_1−xMg_xLa₄Ti₅O₁₇ ceramics at microwave frequency have been studied. The diffraction peaks of Ca_(1−x)Mg_xLa₄Ti₅O₁₇ ceramics nearly unchanged with x increasing from 0 to 0.03. Similar X-ray diffraction peaks of Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic were observed at different sintering temperatures. A maximum density of 5.3 g/cm³ can be obtained for Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic sintered at 1500 °C for 4 h. A maximum dielectric constant (_r) and quality factor (Q × f) of Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic sintered at 1500 °C for 4 h are 56.3 and 12,300 GHz (at 6.4 GHz), respectively. A near-zero temperature coefficient of resonant frequency (τ_f) of −9.6 ppm/°C can be obtained for Ca_0.99Mg_0.01La₄Ti₅O₁₇ ceramic sintered at 1500 °C for 4 h. The measurement results for the aperture-coupled coplanar patch antenna at 2.5 GHz are presented. With this technique, a 3.33% bandwidth (return loss <−10 dB) with a center frequency at approximately 2.5 GHz has been successfully achieved.     

Structure, microstructure and electrical properties of (1 − x − y)Bi0.5Na0.5TiO3–xBi0.5K0.5TiO3–yBi0.5Li0.5TiO3 lead-free piezoelectric ceramics

The ternary system (1 − x − y)Bi_0.5Na_0.5TiO₃–xBi_0.5K_0.5TiO₃–yBi_0.5Li_0.5TiO₃ (abbreviated to BNKLT-x/y) was synthesized by conventional oxide-mixed method. The phase structure, microstructure, and dielectric, ferroelectric and piezoelectric properties of the ceramics were investigated. The X-ray diffraction patterns showed that pure perovskite phase with rhombohedral structure can be obtained in all the ceramics. The grain size varied with x and y. The temperature dependence of dielectric constant and dielectric loss revealed there were two phase transitions which were from ferroelectric (tetragonal) to anti-ferroelectric (rhombohedral) and anti-ferroelectric to paraelectric (cubic). Either increasing x or y content can make T_m (the temperature at which dielectric constant _r reaches the maximum) increase. With the addition of Bi_0.5K_0.5TiO₃, the remanent polarization P_r increased but the coercive field E_c decreased. With the addition of Bi_0.5Li_0.5TiO₃, P_r increased obviously and E_c increased slightly. Due to the stronger ferroelectricity by modifying Bi_0.5K_0.5TiO₃ and Bi_0.5Li_0.5TiO₃, the piezoelectric properties were enhanced at x = 0.22 and y = 0.10, which were as follows: P_r = 31.92 μC/cm², E_c = 32.40 kV/cm, _r = 1118, tan δ = 0.041, d₃₃ = 203 pC/N and K_p = 0.31. The results show that the BNKLT-x/y ceramics are promising candidates for the lead-free materials.     

High-speed deposition of Y-Si-O films by laser chemical vapor deposition using Nd:YAG laser

Y-Si-O films were prepared by laser chemical vapor deposition (LCVD) with a Nd:YAG laser using TEOS (tetraethyl orthosilicate) and Y(dpm)₃ precursors. The effects of laser power (P_L), deposition temperature (T_dep) and total chamber pressure (P_tot) on the phase, microstructure and deposition rate of Y-Si-O films were investigated. At P_L < 102 W (T_dep < 1140 K), amorphous Y-Si-O films were obtained independent of P_tot. At P_tot = 0.6 kPa, mixture phase films of Y₂SiO₅ (the X1 phase) and Y₂Si₂O₇ (the α, β, δ and y phases) were obtained at P_L = 102 W (T_dep = 1210 K), while single phase X1-Y₂SiO₅ films were prepared at P_L > 139 W (T_dep > 1280 K). Y₂Si₂O₇ mixture phase films were obtained at P_tot = 3.5 kPa and Y₂Si₂O₇ and Y₂SiO₅ (the X2 phase) mixture phase films were obtained at P_tot = 7.5 kPa independent of T_dep. Amorphous Y-Si-O films showed a dense, glassy microstructure. Faceted columnar grains grew on the Y-Si-O films at P_tot = 0.6 kPa, whereas rounded cauliflower-like grains grew at P_tot = 7.5 kPa. The R_dep increased with increasing P_L and T_dep and reached a maximum of 430 μm h⁻¹ at P_tot = 0.6 kPa, P_L = 186 W and T_dep = 1310 K.     

Microwave dielectric properties and its compatibility with silver electrode of Li2MgTi3O8 ceramics

The effects of BaCu(B₂O₅) (BCB) additions on the sintering temperature and microwave dielectric properties of Li₂MgTi₃O₈ ceramic have been investigated. The pure Li₂MgTi₃O₈ ceramic shows a relative high sintering temperature (∼1000 °C) and good microwave dielectric properties as Q × f of 40,000 GHz, ?_r of 27.2, τ_f of 2.6 ppm/°C. It was found that the addition of a small amount of BCB can effectively lower the sintering temperature of Li₂MgTi₃O₈ ceramics from 1025 to 900 °C and induce no obvious degradation of the microwave dielectric properties. Typically, the 0.5 wt% BCB added Li₂MgTi₃O₈ ceramic sintered at 900 °C for 2 h exhibited good microwave dielectric properties of Q × f = 36,200 GHz (f = 7.31 GHz), ?_r = 26 and τ_f = −2 ppm/°C. Compatibility with Ag electrode indicates this material can be applied to low temperature-cofired ceramics (LTCC) devices.     

High sintering resistance of a novel thermal barrier coating

Sintering resistance of a novel thermal barrier coating Nd_xZr_1 − xO_y with Z dissolved in, where 0 < x < 0.5, 1.75 < y < 2 and Z is an oxide of a metal selected from Y, Mg, Ca, Hf and mixtures thereof, was studied. The coatings of Nd_xZr_1 − xO_y and typical 7YSZ were deposited by electron beam physical vapor deposition (EB-PVD) and air plasma spray (APS). The samples with the coating system of EB-PVD Nd_xZr_1 − xO_y or 7YSZ overlaid onto a MCrAlY bond coat were cyclically sintered at 1107 °C for 706 hours. The freestanding coatings of EB-PVD Nd_xZr_1 − xO_y and 7YSZ were isothermally sintered at 1371 °C for 500 hours. The microstructure of EB-PVD Nd_xZr_1 − xO_y before and after the sintering was evaluated and compared with EB-PVD 7YSZ. The sintering resistance of freestanding APS Nd_xZr_1 − xO_y coating was also investigated after isothermal sintering at 1200 °C for 50 and 100 hours. The results demonstrated that the new coatings of Nd_xZr_1 − xO_y applied with both EB-PVD and APS have higher sintering resistance than EB-PVD and APS 7YSZ, respectively.     

Mg-substituted ZnNb2O6-TiO2 composite ceramics for RF/microwaves ceramic capacitors

Microstructure and microwave dielectric properties of Mg-substituted ZnNb₂O₆-TiO₂ microwave ceramics were investigated. Mg acted as a grain refining reagent and columbite phase stabilization reagent. With an increasing Mg content, the amount of ixiolite (Zn, Mg) TiNb₂O₈ decreased, and the amount of (Zn_0.9Mg_0.1)_0.17Nb_0.33Ti_0.5O₂ and columbite increased. ZnO-Nb₂O₅-1.75TiO₂-5 mol.%MgO exhibited excellent dielectric properties (at 950 °C): ?_r = 35.6, Q × f = 16,000 GHz (at 5.6 GHz) and τ_f = −10 ppm/°C. The material was applied successfully to make RF/microwaves ceramic capacitor, whose self-resonance frequency was 19 GHz at low capacitance of 0.13 pF.     

Dielectric function and the crystal structure of MeV ion implanted LiNbO3

The behavior of the dielectric functions of MeV ion-implanted LiNbO₃ was studied using THz spectroscopy. Single crystal LiNbO₃ specimens were implanted with 3 MeV Au ions at four different levels of ion fluence (1 × 10¹², 1 × 10¹³, 1 × 10¹⁴ and 1 × 10¹⁵ cm^− 2). The optical spectra of the specimens were then measured in two ranged values: (1) reflectance THz range spectra from 40 to 700 cm^− 1 and (2) reflectance ultraviolet, visible, and near-infrared spectra from 250 to 2000 nm. The THz spectra were analyzed by fitting with the dielectric function model proposed by Brendel. The dielectric function model explained well the experimental spectra of the ion-implanted LiNbO₃. The dielectric function shows that the ion-implanted layers were amorphous phase at the fluence of 1 × 10¹⁴ and 1 × 10¹⁵ cm^− 2, whereas the layers at 1 × 10¹² and 1 × 10¹³ cm^− 2 maintained the crystal phase but significantly suppressed the phonon resonances. The volume of ion-implanted layers expanded about 8% with the fluence of 1 × 10¹⁴ and 1 × 10¹⁵ cm^− 2, i.e. after amorphization, These results show that the ion implantation significantly affected the lattice vibration mode and the structure even at very low ion fluence.     

Ultraviolet and violet upconversion luminescence in Ho-doped Y2O3 ceramic induced by 532-nm CW laser

Ultraviolet and violet upconversion luminescence spectra of holmium-doped Y₂O₃ were produced under the excitation of a compact continues-wave 532 nm solid-state laser. Emissions around 306, 362, 412, 390 and 428 nm can be assigned to the transitions of ³D₃ → ⁵I_J (J = 8, 7, 6), ⁵G₄ → ⁵I₈ and ⁵G₅ → ⁵I₈, respectively. Power dependence and upconversion dynamics analysis demonstrated that both the energy transfer upconversion (ETU) and the excited state absorption (ESA) processes were involved in the population of ³D₃ state via the coupled intermediate states ⁵S₂/⁵F₄. Fluorescence spectra in the visible and infrared ranges showed that ⁵G₄ and ⁵G₅ states were populated by the ESA process from ⁵I₆ and ⁵I₇ states, respectively, while the ⁵I₆ and ⁵I₇ states were radiatively populated from the excited ⁵S₂/⁵F₄ states. Upconversion mechanisms have been evaluated based on a rate equation model.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.