SnO_2／p接触特性对a－Si太阳电池填充因子的影响

用ＰＥＣＶＤ方法制备出高电导率（～０．２ｓｃｍ－１）、宽带隙（～２．２ｅＶ）的Ｐ型微晶化硅碳合金（ｐ－μｃ－ＳｉＣ：Ｈ）薄膜材料。利用ｐ－μＣ－ＳｉＣ：Ｈ／ｐ－ａ－Ｓｉ：Ｈ复合结构做ａ－Ｓｉ太阳电池的窗口材料，明显改善了ＳｎＯ２／ｐ之间的接触特性，从而使１０ｃｍ×１０ｃｍ单结集成型电池的填充因子从０．７０以下提高到０．７２。     

大面积集成型a－SiC：H／a－Si：H叠层太阳电池的研制

报道了大面积（２７９０ｃｍ２）集成型ａ－ＳｉＣ：Ｈ／ａ－Ｓｉ：Ｈ叠层太阳电池的研制及稳定性实验结果，讨论了限制该电池效率的一些因素。实验电池的性能参数：Ｖｏｃ＝４０．８Ｖ，ＩＳＣ＝５３０．４０ｍＡ，ＦＦ＝４９．４％，有效面积（２２８０ｃｍ２）光电转换效率ＥＦ＝４．６９％（ＡＭ１．５，１００ｍＷｃｍ－２，２５℃）。制备出光电子学性能优良的ａ－ＳｉＣ：Ｈ薄膜及解决电池内部ｎ／Ｐ结的接触问题是提高该电池性能的关键。     

p／i界面的缓变层对大面积（2790cm^2）a—Si：H太阳电池性能影响的研究

报道了在大面积（２７９０ｃｍ２）ｐ－ｉ－ｎ型ａ－Ｓｉ∶Ｈ异质结太阳电池ｐ／ｉ界面之间引入缓变层（ＣＧＬ∶Ｃ，ＣＧＬ∶Ｂ∶Ｃ）对电池性能影响的研究结果。实验发现，带有ＣＧＬ∶Ｃ的ａ－Ｓｉ∶Ｈ太阳电池性能的改善主要来源于开路电压的提高，带有ＣＧＬ∶Ｂ∶Ｃ的ａ－Ｓｉ∶Ｈ太阳电池性能的提高主要来源于填充因子ＦＦ的增加。提出了带有缓变层ａ－Ｓｉ∶Ｈ电池的能带模型，据此分析了ｐ／ｉ结附近载流子的复合动力学过程，从理论上解释了实验中所发现的现象。     

RTCVD工艺制备poly—Si薄膜太阳电池的研究

报道了快速热化学气相沉积（ＲＴＣＶＤ）工艺制备多晶硅（ｐｏｌｙ－Ｓｉ）薄膜及电池的实验和结果。采用ＳｉＨ２Ｃｌ２作为原料气体，衬底温度为１０３０℃时，薄膜的生长速率为１０ｎｍ／ｓ。发现薄膜的平均晶粒度及载流子迁移率与衬底温度和材料有关。用该薄膜在未抛光重掺杂磷的硅衬底上制备１ｃｍ２的ｐ＋ｎ结样品电池，无减反射涂层，其转换效率为４．５４％（ＡＭ１．５，１００ｍＷ／ｃｍ２，２５℃）。     

类 p-i-n 结构 n~ (μc-Si : H)/p(poly-Si)/p~ (poly-Si)薄膜太阳电池的热平衡态特性数值分析

通过应用Ｓｃｈａｒｆｅｔｅｒ－Ｇｕｍｍｅｌ解法，数值求解Ｐｏｉｓｓｏｎ方程，对热平衡态ｎ＋（μｃ－Ｓｉ∶Ｈ）／ｐ（ｐｏｌｙ－Ｓｉ）／ｐ＋（ｐｏｌｙ－Ｓｉ）薄膜太阳电池进行计算机数值模拟。说明类ｐ－ｉ－ｎ结构设计使电池获得了较高的短路电流ＪＳＣ，而中间层ｐ（ｐｏｌｙ－Ｓｉ）的掺杂有利于提高电池的短波量子效率特性，还讨论了ｎ＋（μｃ－Ｓｉ∶Ｈ）和ｐ＋（ｐｏｌｙ－Ｓｉ）等层厚度对光生载流子收集的影响。     

蒸发硒化法制备CIS／CdS太阳电池研究

用蒸发硒化法制作的基于ＣｕＩｎＳｅ２（ＣＩＳ）膜的ＣＩＳ／ＣｄＳ太阳电池，面积为０．１ｃｍ２和１ｃｍ２电池的转换效率分别达到７．６２％和７．２８％，５ｃｍ×６ｃｍ电池的平均效率达到６．６７％。对制备工艺及关键技术、电池性能和退火效应进行了分析探讨。     

蒸发硒化法制备了CIS／CdS太阳电池研究

用蒸发硒化法制作的基于ＣｕＩｎＳ３２（ＣＩＳ）膜的ＣＩＳ／ＣｄＳ太阳电池，面积为０．１ｃｍ＾２和１ｃｍ＾２电池的转换效率分别达到７．６２＾和７．２８％，５ｃｍ×６ｃｍ电池的平均效率达到６．６７％，对制备工艺及关键技术，电池性能和退火效应进行了分析探讨。     

高效非晶硅叠层太阳电池的优化设计

研究了高效ａ－Ｓｉ／ａ－Ｓｉ／ａ－Ｓｉ－ＳｉＧｅ三结太阳电池的优化设计。电流匹配是影响二端子叠层太阳电池填充因子的关键因素，在内电极的ｐ／ｎ界面外附加载流子复合是由少数载流子浓度、界面态和ｐ／ｎ界面处材料的几何因素匹配决定的。利用适当的带隙匹配和ｉ层厚度匹配来实现ａ－Ｓｉ／ａ－Ｓｉ／ａ－ＳｉＧｅ三结太阳电池结构的最佳化，同时采用改善ｎ／ｉ界面特性的缓冲层技术，获得了Ｖｏｃ＝２．４８Ｖ，Ｊｓｃ＝６．     

带有缓变层的大面积集成型a—Si：H太阳电池的研制

报道了把缓变层用于大面积（２７９０ｃｍ＾２）单结集成型ａ－Ｓｉ：Ｈ太阳电池板工业化生产的研究工作。分析了它对太阳电池板性能参数Ｖｏｃ，Ｉｓｃ、ＦＦ、η的影响和对提高ａ－Ｓｉ：Ｈ太阳电池板转换效率的作用。试验所得电池板的平均开路电压达２５．１Ｖ，平均转换效率达６．２％，分别比同时生产的无缓变层电池板的水平提高９．１３％和１６．９８％。试验中最好的电池板开路电压达２５．６Ｖ，转换效率达６．６％。     

带有缓变层的大面积集成型a－Si：H太阳电池的研制

报道了把缓变层用于大面积（２７９０ｃｍ２）单结集成型ａ－Ｓｉ：Ｈ太阳电池板工业化生产的研究工作。分析了它对太阳电池板性能参数Ｖｏｃ、Ｉｓｃ、ＦＦ、η的影响和对提高ａ－Ｓｉ：Ｈ太阳电池板转换效率的作用。试验所得电池板的平均开路电压达２５．１Ｖ，平均转换效率达６．２％，分别比同时生产的无级变层电池板的水平提高９．１３％和１６．９８％。试验中最好的电池板开路电压达２５．６Ｖ，转换效率达６．６％。     

Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells

A computer model for the poly-Si thin film-related solar cells is established, with which the solar cells with the structure of single junction poly-Si cell, a-Si/poly-Si tandem cell and a-Si/poly-Si/poly-Si triple cell are simulated. The results indicate that the practical structure for poly-Si-related solar cell is a-Si/poly-Si/poly-Si triple cell with the best matched thickness of 0.23/0.95/3 μm and with optical confinement structure, which has the highest simulated efficiency of 22.74%.     

多晶硅薄膜太阳电池的计算机模拟

建立了一个多晶硅薄膜太阳电池计算机模型，利用该模型，分别模拟计算了单结多晶硅薄膜电池、a-Si/poly-Si双结电池、a-Si/poly-Si/poly-Si三结电池，并对结果进行了讨论。结果表明实际可行的多晶硅电池应是具有陷光结构的a-Si/poly-Si/poly-Si三结叠层电池，其子电池厚度为0.23/0.95/3μm，最高效率的22.74%。     

非晶硅太阳电池的原理

非晶硅太阳电池是２０世纪７０年代中期发展起来的一种新型薄膜太阳电池，与其他太阳电池相比，非晶硅电池具有以下突出特点：（１）制作工艺简单，在制备非晶硅薄膜的同时就能制作pin结构。（２）可连续、大面积、自动化批量生产。（３）非晶硅太阳电池的衬底材料可以是玻璃、不锈钢等，因而成本小。（４）可以设计成各种形式，利用集成型结构，可获得更高的输出电压和光电转换效率。（５）薄膜材料是用硅烷（SiH４）等的辉光放电分解得到的，原材料价格低。１非晶硅太阳电池的结构、原理及制备方法非晶硅太阳电池是以玻璃、不锈钢及特种…     

非晶硅薄膜太阳电池应用分析

简要介绍了当前几种薄膜太阳电池,并分析了它们的优缺点;详细介绍了非晶硅薄膜太阳电池,分析了其光致衰退效应与影响光电性能的各种因素,总结并展望了优化非晶硅太阳电池的各种技术。     

Fabrication technology for large-area a-Si solar cells

The fabrication process technology for large-area a-Si photovoltaic (PV) modules and their performance are reviewed. Our present technology enables us to provide 10% efficient large-area submodules with a stabilized efficiency of 8.5%. To study the practicability of the a-Si solar panels, we carried out an outdoor test for our a-Si modules. The results show that the a-Si solar PV modules generate power very efficiently in outdoor systems. The advantage of the a-Si modules under outdoor uses is presented and discussed.     

Numerical approach for high-efficiency a-Si solar cells

We have developed the first precise numerical simulator for thin-film solar cells with two-dimensional structures, such as a submicron textured a-Si solar cell. Conventional simulators for thin-film solar cells were all one-dimensional, which made precise simulation of the behavior of light and carrier transport in the cell impossible. Using the 2D simulator, guidelines for cell design, including textured structures, were obtained. One proposal to increase the conversion efficiency of the textured a-Si single-junction solar cell is to make the texture period longer than the film thickness.     

Computer modelling of current matching in a-Si : H/a-Si : H tandem solar cells on textured TCO substrates

Computer modelling is used as a tool for optimising a-Si : H/a-Si : H tandem cells on textured substrate in order to achieve current matching between the top and bottom cell. To take light scattering at the textured interfaces of the cell into account, we developed a multirough-interface optical model which was used for calculating the absorption profiles in the tandem cells. In order to simulate multi-junction solar cell as a complete device we implemented a novel model for tunnel/recombination junction (TRJ), which combines the trap-assisted tunnelling and enhanced carrier transport in the high-field region of the TRJ.We investigated the influence of light scattering and thickness of the intrinsic layer of the bottom cell on the optimal ratio i2/i1 between the thicknesses of the bottom (i2) and top (i1) intrinsic layers in the current-matched cell. The simulation results show that increasing amount of scattering at the textured interfaces leads to a lower ratio i2/i1 in the current-matched cell. This ratio depends on the thickness of the intrinsic layer of the bottom cell. The simulation results demonstrate that a-Si : H/a-Si : H tandem cell with 300 nm thick intrinsic layer in the bottom cell exhibits higher efficiency than the cell with 500 nm thick bottom intrinsic layer.     

Apparatus Design for Glow-Discharge a-Si: H Film-Deposition

We draw attention here to several important details of a discharge deposition apparatus, and to how these can affect him quality. In addressing why these details are important, we will suggest some reasons for how and why film quality depends on deposition conditions, and what might be done to improve both film quality and deposition rate. We concentrate on what appear to be three major causes of poor film quality: deposition of microparticulates, ion bombardment of the growing film surface, and growth by sticky radicals (radicals with a high sticking coefficient to the surface).     

a-Si alloy three-stacked solar cells with high stabilized-efficiency

a-Si alloy three-stacked solar cells have been studied to improve the stabilized efficiency of a-Si: H based solar cells. Based on the analysis by the individual characterization method of the component cells in stacked type cells, the a-Si :H middle cell was replaced with an a-SiGe :H cell. Furthermore, the optical confinement technology was improved to obtain a high-output current with thin i-layer thickness in the a-SiGe :H bottom cell. By this device design, the initial conversion efficiency was improved up to 12.4% and more than a 10% stabilized efficiency was obtained in a-SiC :H/a-SiGe :H/a-SiGe :H three-stacked cells. These cell characteristics were confirmed by measurements at the JQA Organization (the former JMI Institute).     

Development and application of see-through a-Si solar cells

A new type of translucent amorphous silicon (a-Si) solar cell, called the see-through a-Si solar cell, is developed. It has multiple microscopic holes within its effective area to transmit light and it generates electric power. A series of technical data on the fabrication processing with various patterning and photovoltaic performance are presented. Some examples of application systems such as car sunroof and home interior are introduced and discussed on a wide variety of new areas of PV applications. The see-through a-Si solar cell was mounted on a car sunroof to drive the car's ventilating system or to charge its battery. The ventilating system reduced the interior temperature of the car from 61 to 47°C during daytime parking.