红外焦平面阵列二元非线性的非均匀性理论模型

 非均匀性校正是红外焦平面阵列成像质量提高的关键,在现有一元线性理论模型局限下,红外焦平面阵列成像非均匀性校正难以获得校正精度的提高.本文通过红外焦平面阵列探测器成像机理及其成像过程理论分析,推导了影响探测器响应及其非均匀性的主要因素,首次建立了红外焦平面阵列二元非线性的非均匀性理论模型,通过实验测试及其统计分析验证了理论模型.该模型能在较宽红外辐射和环境温度范围内准确预测红外焦平面阵列响应曲线及其非均匀性,比原一元线性理论模型更全面准确地描述了红外成像非均匀性影响因素及探测器响应关系.     

利用CPLD实现红外焦平面阵列实时非均匀性校正

红外焦平面阵列响应的非均匀性严重限制了红外系统的成像质量,必须在使用时对其进行非均匀性校正.以两点校正方法为例,利用CPLD的高速性和灵活的可编程性,对红外焦平面阵列进行实时非均匀性校正.实验结果表明利用CPLD实现的红外焦平面阵列的非均匀性校正方法简单、效果理想.     

红外焦平面阵列非均匀性实时校正研究

针对红外焦平面阵列非均匀性多点校正过程中涉及的数据量大,难于实现实时校正的特点,提出了利用TMS320DM642 DSP硬件对红外焦平面阵列进行多点实时校正.利用DSP的硬件乘法器和加法器能够高速有效地实现红外焦平面阵列的非均匀性校正.实验结果表明利用DSP实现红外焦平面阵列实时非均匀性校正方法简单灵活,图像效果理想,能够很好地满足红外焦平面阵列成像系统实时性能的要求.     

基于虚拟边框视场光阑的IRFPA自适应非均匀性校正算法

 非均匀性校正是提高红外焦平面阵列成像质量的关键环节.本文提出了一种基于虚拟边框视场光阑的红外非均匀性校正算法.该算法用人工神经网络对边框像元进行初始校正,形成校正虚拟边框,再根据场景信息和帧间位移,将偏置校正参数逐行逐列传递,可消除焦平面阵列全视场响应的偏置非均匀性.由于算法主要基于代数运算,运算量较低,故能根据场景信息自适应地实现快速、高效的一点校正;且不需要对成像系统进行机械结构改造,与传统代数算法相比,适应性更强.真实红外图像与仿真图像对算法的检验结果,证明了方法的有效性.     

基于DSP的红外焦平面阵列非均匀性校正技术

红外焦平面成像系统是红外成像技术发展的趋势，焦平面阵列的非均匀性校正技术是一项正在探索的关键技术。在分析了红外成像系统非均匀性的产生机理及表现特征的基础上，介绍了红外焦平面阵列非均匀性校正的基本方法；基于TMS320C62x DSP为核心的系统硬件平台，采用两点多段的方法，完成了红外图像非均匀性的实时校正；最后给出了实验结果，验证了本系统能够满足红外焦平面成像系统的要求，具有实时性好、实用性强的特点。     

热释电型红外焦平面阵列成像模拟实验研究

讨论了热释电型红外焦平面阵列成像系统及基本的信号处理，包括信号差分处理、非均匀性校正等，利用自扫描光电二极管列阵（SSPA）对热释电型红外焦平面阵列成像系统进行了模拟实验，获得了满意的图像，为进一步研制热释电型红外焦平面阵列成像系统打下了基础。     

基于局部直方图规定化的红外图像非均匀性校正

非均匀性噪声严重影响着红外焦平面阵列的成像质量。针对条纹非均匀性问题,提出了一种基于局部直方图规定化的红外图像非均匀性校正算法。该算法对图像逐列进行处理,首先采用文中提出的加权折中直方图方法计算得到每一列图像的期望直方图,然后对当前图像列进行直方图规定化处理,最后遍历整幅图像实现非均匀性校正。实验结果表明,本文算法能够有效地抑制红外图像的条纹非均匀性噪声,同时较好地保留了图像的边缘轮廓信息。     

非制冷红外图像非均匀性校正在FPGA上的实现

红外焦平面阵列（IRFPA）的非均匀性是影响红外系统成像质量的关键性因素,在此提出了一种非制冷红外图像的非均匀性校正及其在FPGA上的实现方法,通过对非制冷红外图像盲元及非均匀校正方法分析,提出了二点加一点定标校正方法,并利用FPGA实现红外图像非均匀校正的实时处理,获得了较好的实验结果。利用二点加一点定标校正方法,可以改善红外图像非均匀性校正效果,用在FPGA上实现非均匀性校正可以实现红外图像的实时处理,便于集成和移植。     

红外探测器非均匀性校正系统研制

分析了红外焦平面阵列（IRFPA）基于定标的非均匀性校正算法和基于场景的非均匀性校正算法的优势和不足。针对红外焦平面阵列二元非线性的非均匀性理论模型这一特点,提出了一种基于S曲线拟合的校正算法。利用FLIR公司的长波非制冷红外探测器进行信号采集,建立了焦平面探测元的响应模型。描述了基于FLIR长波非制冷红外探测器在FPGA平台的处理流程,并实现了S曲线校正算法,提高了红外图像的质量。实验表明,经过S曲线拟合校正处理,减弱了红外图像的条纹噪声,使IRFPA组件的非均匀性从6.45%降低至2.06%。     

红外焦平面条带状非均匀性校正硬件实现方法

红外焦平面阵列条带状非均匀性严重影响了其成像质量,大大限制了它的应用。实现了一种基于FPGA的红外焦平面阵列条带状非均匀性实时校正系统,该系统以中值红外均衡算法为核心,针对算法以及FPGA的特性进行了优化,单帧内可进行条带状非均匀性的校正,硬件仿真结果表明:处理效果显著。系统处理速度快、资源占用量小,可以作为一个独立模块嵌入到红外焦平面成像与处理系统中,实现条带状非均匀性的实时校正,有很高的实用性与可扩展性。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.