一种高效的高精度相控阵雷达工程测角方法

相控阵雷达波束宽度随着扫描角的增加而展宽,导致和差波束法测角精度降低,同时,为了解决雷达数据处理芯片存储空间小的限制,本文提出了一种高效的高精度相控阵雷达工程测角方法。该方法以频率值、S曲线系数等信息为输入,进行相应修正处理,查询参数表,求出波束内偏角量,结合波束中心指向,输出天线坐标系下的角度信息;再根据天线罩修正参数表,通过二维线性插值,计算由于天线罩折射引起的角度误差,输出最终修正后天线坐标系下的角度信息。通过仿真分析及暗室测试数据处理验证了工程测角方法的有效性。     

相控阵天气雷达气象雷达方程修正研究北大核心CSCD

气象雷达方程是天气雷达进行定量测量的基础,由于相控阵天气雷达特有的扫描特性,应对业务中应用的气象雷达方程进行修正。从天线方向图函数不同的角度出发,对雷达方程进行推导修正,并模拟相控阵天气雷达在窄发窄收、宽发四收两种不同探测模式下扫描带有降雹的气旋,得到回波强度图和速度图。在统计模拟扫描计算值与给定值误差基础上,定量分析天线方向图函数对修正后雷达方程计算的影响,得出在窄发窄收探测模式下计算误差值在测量精度范围内,经过修正的雷达方程在业务中应用是可行的。     

多波束相控阵天线角度测量方法

在雷达、通信、测控等领域中,基于相控阵天线的幅度和差单脉冲测角技术是基本方法,但该方法通过旋转法向方向图去近似表示子波束方向图,并用一阶泰勒公式近似表示子波束接收信号幅度,从而带来非噪声因素误差,最终导致目标角度估计精度不高。为此,通过相控阵天线同时产生两个形状相同但相互独立的子波束,旋转波束指向中心轴方向的方向图函数来确定两个子波束的方向图函数,并用高阶泰勒公式对子波束接收信号幅度进行近似,从而减少误差。仿真和硬件测试结果表明所提方法能够有效提高测角精度。     

一种捷联惯导引入的测角误差抑制方法

舰载相控阵雷达通过捷联惯导设备获取雷达实时的姿态角度信息,但捷联惯导设备存在姿态测量误差,目标在坐标变换至导航坐标系时会引入相应的测角误差。针对此问题提出一种测角误差抑制方法,该方法通过构建联合方位角测角误差和俯仰角测角误差的代价函数,调节捷联惯导设备与相控阵雷达的航向角偏差,获取最优安装位置下的综合测角误差,实现对捷联惯导设备引入测角误差的最大抑制,仿真试验验证了该方法的有效性。     

基于阵元方向图的相控阵雷达辐射源识别技术

为了实现对相控阵雷达辐射源的个体识别,分析了相控阵雷达天线的方向图形成方式,提出一种基于阵元天线方向图的相控阵雷达辐射源识别技术。通过双站侦察数据得到相控阵雷达天线阵面的指向角,进而算得相控阵雷达的阵列因子函数,经过比对接收的雷达天线方向图和阵列因子函数,得到组成阵列的天线阵元方向图,最终将计算得到的天线方向图与数据库中的天线方向图进行匹配,完成对相控阵雷达辐射源的个体识别。该方法通过提取相控阵雷达天线方向图的不变个体特征,实现了对相控阵雷达辐射源的个体识别。仿真实验结果表明所提方法能够有效地对相控阵雷达辐射源进行识别。     

雷达低角跟踪性能影响分析

基于相控阵雷达的天线波束形成原理和单脉冲体制测角原理，分析了波瓣分裂对雷达角敏函数曲线的影响以及多路径效应对S波段舰载有源相控阵雷达低空跟踪性能的影响，比较了改善跟踪低仰角目标性能的3种方法如偏轴跟踪和复角技术的现实性和可行性。     

阵面机械轴误差对相控阵雷达测角精度影响分析与验证

天线阵面机械轴误差在多个维度上共同影响相控阵雷达测角精度,实际应用中难以测量、分析和验证,是高精度相控阵雷达实现精确测角迫切需要解决的关键问题之一.基于机械轴误差对相控阵雷达测角精度影响模型,推导出实际条件下空间直角坐标系到阵面直角坐标系的变换矩阵,对相控阵雷达波束指向公式进行修正,详细分析了机械轴误差及波束扫描角变化...     

相控阵雷达的测角误差分析

在测角误差分析上,相控阵雷达与机械雷达有不同之处,本文讨论了影响相控阵雷达角跟踪精度的主要角误差源,并给出了各误差源的估算方法,通过示例估算出相控阵雷达的系统误差和随机误差。     

一种改进的U⁃V空间测角方法

两维相控阵雷达通常采用单脉冲和差波束测角实现对目标角度的测量和跟踪。对于矩形阵列，通常在U?V空间下对不同频率进行归一化，只需在方位和俯仰向各建立一条误差曲线即可完成单脉冲测角，减少了运算量和存储空间。本文针对圆形阵列无法仅用方位和俯仰各一条误差曲线进行测角的缺点，提出了一种改进的U?V空间和差波束测角曲线的建立和使用方法。该方法采用多条测角曲线迭代逼近的思想，实现简单、运算量小，能够提高角度的测量精度。仿真结果验证了该方法的可行性和有效性。     

激光雷达液晶相控阵组件扫描精度分析

扫描精度是激光雷达液晶相控阵扫描组件的一个重要指标.提出了一种对液晶相控阵扫描组件扫描精度误差进行定量计算的方法,利用瑞利-索末菲(Rayleigh-Sommerfeld)公式精确计算出扫描激光束的远场波束,得到角度误差值,采用角度误差值和3 dB主瓣宽度的比值对精度误差进行衡量.利用该方法对电压最化误差、制造误差、高斯预处理三种典型的因素进行了仿真分析,并得到三种误差造成的扫描精度误差量级分别为10-3,10-2,10-5,因此,激光雷达液晶相控阵扫描组件的设计加工必须考虑加工精度对扫描角度的影响.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.