Pulse electrodeposited AgInS2 films

AgInS₂ films were pulse electrodeposited on tin oxide coated glass substrates at different duty cycles for the first time. The films were single phase with orthorhombic structure. Optical absorption measurements indicated a band gap in the range of 1.90–2.02 eV with decrease of duty cycle. Transmission spectra exhibited interference fringes. Using the envelope method, refractive index was calculated. Optical conductivity was evaluated from the absorption coefficient and refractive index data. Optical data was analyzed by the single-effective oscillator model.     

Structural Phase Transitions I

Optical phase changes of visible radiation in transmission through evaporated gold and tellurium thin films were determined using the Rayleigh-Lowe refractometer. The variation of the phase change in transmission with thickness was utilized to determine the absorption coefficient, ku, for both films as well as the refractive index, nu.     

Optische und mechanische Eigenschaften von RLVIP HfO2‐Schichten

Optical and mechanical properties of RLVIP HfO₂ films In this paper HfO₂‐films were deposited on unheated fused silica, borosilicate glass, and silicon wafer substrates by reactive low voltage ion plating (RLVIP). Optical film properties, i. e. refractive index and absorption as well as mechanical properties, particularly film stress, were investigated. Their dependence on deposition parameters, i. e. arc current and oxygen partial pressure was studied. The film refractive index was calculated from spectrophotometric measurements. The low absorption was determined by photothermal deflection spectrometry. Stress measurements were performed by bending disc method with uncoated and coated silicon wafer substrates.     

Influence of laser-irradiation on the optical constants Se75S25 − xCdx thin films

Amorphous thin films of glassy alloys of Se₇₅S_25 − xCd_x (x = 2, 4 and 6) were prepared by thermal evaporation onto chemically cleaned glass substrates. Optical absorption and reflection measurements were carried out on as-deposited and laser-irradiated thin films in the wavelength region of 500-1000 nm. Analysis of the optical absorption data shows that the rule of no-direct transitions predominates. The laser-irradiated Se₇₅S_25 − xCd_x films showed an increase in the optical band gap and absorption coefficient with increasing the time of laser-irradiation. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The value of refractive index increases decreases with increasing photon energy and also by increasing the time of laser-irradiation. With the large absorption coefficient and change in the optical band gap and refractive index by the influence of laser-irradiation, these materials may be suitable for optical disc application.     

Influence of annealing on the optical properties of 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride thin films

Optical constants (refractive index, n, and absorption index, k) of the as-deposited and annealed films of 5,10,15,20-tetraphenyl-21H, 23H-porphine iron (III) chloride (FeTPPCl) have been obtained in the wavelength range 190–2500 nm by using spectrophotometric measurements. The obtained optical constants were used to estimate the type of transition for the as-deposited and annealed films. We present a single oscillator model that describes the dispersion of refractive index. Drude model of free carriers absorption have been described for the analysis the dispersion of refractive index dispersion before and after annealing.     

类金刚石薄膜光学特性的椭偏法研究

本文采用脉冲电弧离子镀的方法,在p型硅上沉积类金刚石薄膜,用椭偏法测试薄膜的光学常数.根据沉积方法的特点,建立一个四层结构的膜系,并由每一层的吸收情况合理选择色散关系;结合透过率的测试结果,利用光度法给测出薄膜折射率和厚度的估计值,作为椭偏法拟合的初值,拟合效果良好,得到薄膜的折射率、消光系数和几何厚度.     

Structural and optical properties of indium tin oxide (ITO) thin films with different compositions prepared by electron beam evaporation

Tin-doped Indium oxide thin films in different compositions (Sn = 0,5,10,15,20 at.wt%) were prepared on glass substrates at the substrate temperature of 250 °C in an oxygen atmosphere by electron beam evaporation. The structural and morphological studies were carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The grain size of the ITO films decreased when increasing the dopant concentration of Sn in the In₂O₃ lattice. Optical properties of the films were studied in the UV-Visible-NIR region (300-1000 nm). The optical energy band gap (E_g), as determined by the dependence of the absorption coefficient on the photon energy at short wavelengths was found to increase from 3.61 to 3.89 eV revealing the ascending loading profile of dopant concentration. Optical Parameters, such as absorption depth, refractive index (n), extinction coefficient (k), packing density, porosity, dispersion energy and single effective oscillator energy were also studied to show the composition dependence of tin-doped indium oxide films.     

HMDSO plasma polymerization and thin film optical properties

Thin films were deposited from hexamethyldisiloxane (HMDSO) in a glow discharge supplied with radiofrequency (rf) power. Actino-metric optical emission spectroscopy was used to follow trends in the plasma concentrations of the species SiH (414.2 nm), CH (431.4 nm), CO (520.0 nm), and H (656.3 nm) as a function of the applied rf power (range 5 to 35 W). Transmission infrared spectroscopy (IRS) was employed to characterize the molecular structure of the polymer, showing the presence of Si-H, Si-O-Si, Si-O-C and C-H groups. The deposition rate, determined by optical interferometry, ranged from 60 to 130 nm/min. Optical properties were determined from transmission ultra violet-visible spectroscopy (UVS) data. The absorption coefficient , the refractive index n, and the optical gap E₀₄ of the polymer films were calculated as a function of the applied power. The refractive index at a photon energy of 1 eV varied from 1.45 to 1.55, depending on the rf power used for the deposition. The absorption coefficient showed an absorption edge similar to other non-crystalline materials, amorphous hydrogenated carbon, and semiconductors. For our samples, we define as an optical gap, the photon energy E₀₄ corresponding to the energy at an absorption of 10⁴ cm⁻¹. The values of E₀₄ decreased from 5.3 to 4.6 as the rf power was increased from 5 to 35 W.     

Impact of radio frequency source power-induced ion energy on a refractive index of SiN film deposited by a pulsed-PECVD at room temperature

Using a pulsed-plasma enhanced chemical vapor deposition system, silicon nitride films were deposited at room temperature. A refractive index was examined in the range of bias power and duty ratio, 200-800 W and 40-90%, respectively. Ion energy diagnostics was related to the refractive index. The refractive index decreased with decreasing the duty ratio at all powers but 800 W. For all the duty variations at all powers but 200 W, the refractive index was strongly correlated with the ion energy flux. The refractive index varied between 1.662 and 1.817. Using a neural network model, the refractive index was optimized.     

Characterization of optical, electrical and structural properties of silverphthalocyanine thin films

Silverphthalocyanine thin films are deposited on to glass substrates by thermal evaporation technique. Optical data have been obtained from both absorption and reflectivity spectra over the wavelength range 350–900 nm. The absorption coefficient α and extinction coefficient k are estimated from the spectrum. The mechanism of optical absorption follows the rule of direct transition. Using α and k, the refractive index and the dielectric constants are determined. Electrical conductivity studies are done at different substrate temperatures and using the Arrhenius plot the activation energy in the intrinsic region and impurity region is estimated. From the X-ray diffractograms of AgPc thin films subjected to heat treatments the variation of grain size is also studied. The scanning electron microscopy images are taken to study the surface morphology of the films. Silver phthalocyanine thin film is expected to find application in the fabrication of organic transistors and LED devices.     

Influence of ultraviolet irradiation on the optical properties of amorphous Sb10Se90 thin films

Amorphous Sb₁₀Se₉₀ thin films were prepared by thermal evaporation of the bulk glass. The changes in the optical properties (transmittance, optical gap, absorption coefficient, refractive index and extinction coefficient) have been measured in the wavelength range 500-900 nm of virgin and ultraviolet (UV) illuminated films. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It is found that the optical energy gap decreases (photo-darkening) and the refractive index increases with the increase of UV exposure time. The dispersion of the refractive index (n) has been discussed in terms of Wemple-Didomenico single oscillator model. The oscillator energy E₀ and the dispersion energy E_d have been determined and discussed in terms of UV exposure time. The photo-darkening was discussed in terms of some of the current literature models.     

磁控溅射超薄金属膜在太赫兹波段的光学特性

采用THz时域光谱测试技术，对Fe扣Co的超薄金属膜在0.2～2，5THz波段的吸收特性、透射特性以及折射率进行了研究。在室温并去除水份影响的氮气环境中，获得了不同种类扣不同厚度的薄金属膜在太赫兹波段的时域谱．利用Origin7．0扣Matlab7，0软件处理得到这些金属薄膜对太赫兹波的透射率，吸收系数扣折射率．对比发现金属超薄膜在太赫兹波段的光学特性随薄膜厚度以及太赫兹波频率的变化有很大的改变，也就是具有明显的尺寸效应．同时根据所得到的折射率开口吸收系数还可以理论上计算出不同种类与厚度的超薄金属膜在太赫兹波段的复介电函数．     

磁控反应溅射制备的Ta2O5薄膜的光学与介电性能

采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。     

Absorption and photoreflectance spectroscopy of zinc phthalocyanine (ZnPc) thin films grown by thermal evaporation

Optical properties of the as-deposited and annealed ZnPc layers have been investigated using absorption, reflectance and modulated photoreflectance methods. The absorption coefficient of ZnPc layers was directly determined from the transmission and reflection spectra. The absorption spectra were analyzed in terms of the mixed Lorentz–Lorenz model. We found that annealing thin layers at 580 K caused a structural transformation, which results in the decrease of the absorption coefficient and the shifting of all peak position to lower energies except for the peak of the N-band. Photoreflectance spectroscopy confirmed that there exist three transitions in the Q-band region of the studied material. Complex refractive index and dielectric constants of the ZnPc layer were directly found from the spectral data.     

Influence of Relevant Gas Pressure on the Properties of Ionplated Ta2O5 Films. Einfluss relevanter Gasdrücke auf die Eigenschaften ionenplattierter Ta2O5 Schichten

Ta₂O₅ films were deposited onto unheated fused silica substrates (Suprasil®) by reactive low voltage ion plating (RLVIP). From these films of about 200 nm thickness the optical properties (refractive index n and the absorption coefficient k) and also the mechanical properties (density ρ and intrinsic stress σ) were investigated in dependence of the working gas pressure (Ar) and the reactive gas pressure (O₂). The experiments show a reasonable correlation between refractive index, density and intrinsic stress of the films. With low total pressure high refractive indices (up to n₅₅₀=2.25), high compressive film stress and high relative film density were found. However the film density, the refractive index and also the intrinsic stress decreased with films prepared under raising total gas pressure. The optical absorption depends on the amount of oxygen in the gas phase during deposition. By adding more oxygen to the Ar/O₂ gas mixture primarily the absorption could clearly be decreased.     

Optical properties of praseodymium oxide films

The refractive index n_f, absorption index k_f and absorption coefficient α of vacuum-deposited films of praseodymium oxide prepared under different conditions have been evaluated from the transmittance T data at different wavelengths in the visible region. The optical energy gap was estimated to be approximately 3.40 eV.     

Optical constants of Zn-doped CuInS2 thin films

Optical properties of Zn-doped CuInS₂ thin films grown by double source thermal evaporation method have been studied. The amount of the Zn source was determined to be 0%-4% molecular weight compared with CuInS₂ source. After that, samples were annealed in vacuum at the temperature of 450 °C in quartz tube. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflexion spectral data over the wavelength range 300-1800 nm. It is observed that there is an increase in optical band gap with increasing Zn % molecular weight. It has been found that the refractive index and extinction coefficient are dependent on Zn incorporation. The complex dielectric constants of Zn-doped CuInS₂ films have been calculated in the investigated wavelength range. It was found that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated according to the model of Spitzer and Fan.     

Ellipsometry on sputter-deposited tin oxide films: optical constants versus stoichiometry, hydrogen content, and amount of electrochemically intercalated lithium

Tin oxide thin films were deposited by reactive radio-frequency magnetron sputtering onto In(2)O(3):Sn-coated and bare glass substrates. Optical constants in the 3002500-nm wavelength range were determined by a combination of variable-angle spectroscopic ellipsometry and spectrophotometric transmittance measurements. Surface roughness was modeled from optical measurements and compared with atomic-force microscopy. The two techniques gave consistent results. The fit between experimental optical data and model results could be significantly improved when it was assumed that the refractive index of the Sn oxide varied across the film thickness. Varying the oxygen partial pressure during deposition made it possible to obtain films whose complex refractive index changed at the transition from SnO to SnO(2). An addition of hydrogen gas during sputtering led to lower optical constants in the full spectral range in connection with a blueshift of the bandgap. Electrochemical intercalation of lithium ions into the Sn oxide films raised their refractive index and enhanced their refractive-index gradient.     

Deposition at low substrate temperatures of high-quality TiO2 films by radical beam-assisted evaporation

We deposited high-quality TiO(2) films by an oxygen-radical beam-assisted evaporation (RBE) method at a lower substrate temperature (Ts) than that for a TiO(2) film deposited by conventional thermal evaporation (TE) with neutral-oxygen gas. The films were then evaluated in terms of refractive index, shift of wavelength of a peak in the reflection curve, and absorption coefficient. The TiO(2) films deposited by RBE at Ts < 473 K showed higher refractive indices, were more compact, and had lower absorption coefficients than the film deposited by TE at Ts = 473 K.     

(Pb,Ca)TiO3铁电薄膜光学性质的研究

用溶胶凝胶法在Ｓｉ（１００）衬底上制备了（Ｐｂ,Ｃａ）ＴｉＯ３铁电薄膜样品,测量了其在２．３￣５．０ｅＶ能量范围的鸫谱,并获得样品的膜厚和在该区间的光学常数谱,实验发现Ｐｂ离子被Ｃａ离子取代后,折射率向低能方向移动;同时随着Ｃａ含量的增加,（Ｐｂ１Ｃａ（ＴＩＯ３工能方向移动,表明Ｃａ离子取代Ｐｂ离子后,禁带宽度Ｅｇ减小,还了引起折射率峰移动和禁带宽度Ｅｇ减小的原因。