a——Si：H CCD的转移特性分析

本文从ａ－Ｓｉ：Ｈ的材料特性出发，采用更为精确的ａ－Ｓｉ：Ｈ带隙态分布模型计算了ａ－Ｓｉ：ＨＣＣＤ的转移特性，得出了ａ－Ｓｉ：Ｈ材料参数对ａ－Ｓｉ：ＨＣＣＤ的动态性影响的数值分析结果，理论结果表明，ａ－Ｓｉ：Ｈ材料带隙中局域态分布对ａ－Ｓｉ：ＨＣＣＤ的转移特性有非常大的影响，而且在高频下，ａ－Ｓｉ：Ｈ中的带尾态对ａ－Ｓｉ：ＨＣＣＤ转移特性的影响比深局域态要大。     

a－S1∶H CCD的转移特性分析

本文从ａ—Ｓｉ∶Ｈ的材料特性出发，采用更为精确的ａ—Ｓｉ∶Ｈ带隙态分布模型计算了ａ—Ｓｉ∶ＨＣＣＤ的转移特性，得出了ａ—Ｓｉ∶Ｈ材料参数对ａ—Ｓｉ∶ＨＣＣＤ的动态特性影响的数值分析结果．理论结果表明，ａ—Ｓｉ∶Ｈ材料带隙中的局域态分布对ａ—Ｓｉ∶ＨＣＣＤ的转移特性有非常大的影响．而且在高频下，ａ－Ｓｉ∶Ｈ中的带尾态对ａ—Ｓｉ∶ＨＣＣＤ转移特性的影响比深局域态要大．     

高质量非晶硅锗材料的研制

ａ－ＳｉＧｅ：Ｈ材料的光电性能强烈地依赖于沉积条件，选择适当的氢稀释率、气体压强，掺锗率和辉光功率，获得了光带隙为１．４５ｅＶ，光暗电导比为１．６×１０＾５的高质量ａ－ＳｉＧｅ：Ｈ材料。     

a—Si TFT中钼与非晶硅之间的互作用

本文报导当在室温下向非晶硅（ａ－Ｓｉ）表面溅射钼（Ｍｏ）的过程中Ｍｏ与非晶硅发生互作用的现象。该互作用要求一定的临界溅射功率与钼层厚度。其作用速率在ａ－Ｓｉ界面为反应速率限制,而在与Ｍｏ交界面则为扩建速率限制。互作用生成非晶态钼硅Ｍｏ：ａ－Ｓｉ合金。它可阻止铝（Ａｌ）向ａ－Ｓｉ中扩散,同时可改善ａ－Ｓｉ ＴＦＴ的接触特性。当用Ａｌ／Ｍｏ作ａ－Ｓｉ薄膜晶体管（ａ－Ｓｉ ＴＦＴ）的源和漏电极时,可提高     

大面积高效率高稳定非晶硅太阳电池的研究

根据电流连续性原则和光伏材料选择原则，对叠层电池的电流匹配进行了研究，结果表明，电流匹配是影响叠层电池短路电流和转换效率的重要因素之一，电流匹配可以通过调整单元电池厚度来实现，在此基础上，获得了面积为４００ｃｍ＾２，转移效率分别为８．２８％，７．５２％和６．７４％的ａ－Ｓｉ／ａ－Ｓｉ，ａ－Ｓｉ／ａ－ＳｉＧｅ和ａ－Ｓｉ／Ａ－Ｓｉ／ａ－ＳｉＧｅ高效率叠层电池。     

钨硅／砷化镓肖特基接触的热稳定性分析

研究了以ＷＳｉ０．６复合材料作为靶源，采用直流空溅射工艺成膜，不同退火温度下ＧａＡｓ衬底材料上ＷＳｉ０．６膜层的特性。包括ＷＳｉ０．６／ＧａＡｓ系统断面ＳＥＭ分析，ＡＥＳ界面机构分析、表面形貌分析及金属－半导体肖特基势垒特性分析，实验结果表明，在氩气压力为１３３Ｐdisplay status     

一种5V6位80MS／sBiCMOS闪烁ADC

一种５Ｖ６位８０ＭＳ／ｓＢｉＣＭＯＳ闪烁ＡＤＣ＝Ａ５Ｖ，６－ｂ，８０ＭＳ／ｓＢｉＣＭＯＳｆｔａｓｈＡＤＣ［刊，英］／Ｒｅｙｂａｎｉ，Ｈ．…∥ＩＥＥＥＪＳｏｌｉｄ－ＳｔａｔｅＣｉｒｃｕｉｔｓ．－１９９４．２９（８）．８７３～８７８开发出一种５Ｖ单电源６...     

Windows 95环境下串行通信程序的设计方法

本文详细介绍了 Ｖｉｓｕａｌ Ｂａｓｉｃ ５．０中通信控件ＭＳＣｏｍｍ．ｏｃｘ的一些重要属性以及在Ｗｉｎ－ｄｏｗｓ９５环境下应用通信控件实现微机与多部单片机之间串行通信的编程方法,并结合典型实例给出基本的通信程序。     

新型压电材料——La3Ga5SiO14单晶

介绍了一种性能优异的新型压电材料－Ｌａ３Ｇａ５ＳｉＯ１４单晶的结构及其性能,叙述了Ｌａ３Ｇａ５ＳｉＯ１４单晶的生长条件及其原料制备方法,同时对这种晶体在声体波及声表面波领域的良好的应用前景进行了讨论。     

影响Ga-Si-ZSM-5沸石分子筛形貌及晶粒大小的因素

考察了影响合成Ｇａ－Ｓｉ－ＺＳＭ－５分子筛形貌和晶粒大小的若干因素，实验结果表明，合成参数的影响非常大，在低温、加压条件下可获得更小晶粒的分子筛产物。     

差分SPV法测量a-Si:H材料少子扩散长度的数学模型

用差分SPV法测量a-Si:H材料的少子扩散长度,可以消除被测样品背面结的影响.本文讨论了这种测量方法的数学模型,导出了测量公式,分析了影响测量结果的各种因素.     

Degrees of freedom in some underspread MIMO fading channels

Consider a multiple-input multiple-output (MIMO) fading channel in which the fading process varies slowly over time. Assuming that neither the transmitter nor the receiver have knowledge of the fading process, do multiple transmit and receive antennas provide significant capacity improvements at high signal-to-noise ratio (SNR)? For regular fading processes, recent results show that capacity ultimately grows doubly logarithmically with the SNR independently of the number of transmit and receive antennas used. We show that for the Gauss-Markov fading process in all regimes of practical interest the use of multiple antennas provides large capacity improvements. Nonregular fading processes show completely different high-SNR behaviors due to the perfect predictability of the process from noiseless observations. We analyze the capacity of MIMO channels with nonregular fading by presenting a lower bound, which we specialize to the case of band-limited slowly varying fading processes to show that the use of multiple antennas is still highly beneficial. In both cases, regular and nonregular fading, this capacity improvement can be seen as the benefit of having multiple spatial degrees of freedom. For the Gauss-Markov fading model and all regimes of practical interest, we present a communication scheme that achieves the full number of degrees of freedom of the channel with tractable complexity. Our results for underspread Gauss-Markov and band-limited nonregular fading channels suggest that multiple antennas are useful at high SNR.     

Advent of nonregularity in photon-pulse delay estimation (Corresp.)

The mean-square error of the delay estimate of a photon pulse is known to decrease asQ^{-1}if the pulse envelope is smooth, but asQ^{-2}if it has sharp edges, thereby belonging to "nonregular" estimation cases (Qdenotes the expected photon count). The transition from theQ^{-1}to theQ^{-2}law is investigated for trapezoidal pulse models, and is found to occur in the region where the standard deviation of the error is on the order of the width of the pulse slopes. Thus for values ofQbelow this region, practical pulses are effectively rectangular, and their estimation problem may be qualified as "nonregular."     

Interface states characterization in heterojunction solar cells from CV-GV measurements and modeling

A new method is proposed to extract interface states density D_it at the hydrogenated amorphous/crystalline silicon interfaces (aSi:H/cSi) of heterojunction solar cells - HET. This technique based on CV and GV measurements consists in adapting standard electrical D_it models for MOS structures to the specific case of HET solar cells. In particular, a parasitic conductance is introduced to account for the high leakage current of the diode in the forward regime. The relevance and accuracy of such an analytical model is then demonstrated by comparison with experimental results and with more complex numerical approaches. Finally, this technique enables us to demonstrate the high quality of the interface of HET solar cells which exhibit D_it levels below 10¹¹ defects per cm².     

Identification of the Radial Configurations Extracted From the Weakly Meshed Structures of Electrical Distribution Systems

The electrical distribution systems are typically structured as weakly meshed networks with multiple supply points, but they are operated with radial configurations by opening the redundant branches. The nonregular composition of the meshed structure and the constraints imposed by the number and location of the supply points complicate the problem of determining all of the possible radial configurations that can be extracted out of a given structure. This paper illustrates a novel procedure, based on the creation of a reduced network structure, to determine the number of possible radial configurations and the set of open branches corresponding to each radial configuration. The proposed approach is presented and applied to five test distribution systems commonly available in the literature, providing for the first time the information about the number and the layout of the possible radial configurations obtainable for these systems.     

a-Si:H太阳能电池i层中氧、硼杂质对其稳定性影响

基于pin结构的a－Si：H太阳能电池中空间电荷效应，讨论了i层中氧、硼杂质对其性能的影响，结果表明，氧硼杂质存在都改变a－Si：H太阳能电池内部电场分布，不利于光生载流子收集，但i层轻度因掺杂可抑制a－Si：H太阳能电池光诱导性能衰退，提高电池稳定性。而i层氧含量和助长了a－Si：H太阳能电地光诱导性能衰退的发生，高于1020cm－3的氧含量是有害的。     

RBF网络与BP网络在非线性电子器件建模中的性能比较

针对BP网络在非线性电子器件建模应用中的不足,尝试了利用RBF网络建模的新方法,即首先用RBF网络逼近器件的非线性特性,然后再将得出的网络结构用Pspice电路描述语言描述来建立非线性电子器件的模型,并对这两种网络在建模时的优缺点进行了比较.     

基于神经网络的非线性电子器件的建模方法

针对当前电路仿真中复杂非线性电子器件的建模问题,提出了先由神经网络学习器件的输入输出特性,再将得出的网络结构用Pspice中的电路描述语言描述的建立非线性电子器件模型的新方法,并通过实验验证了这种方法的有效性。这一方法可作为一种通用方法,用于其它器件的建模。     

Synchronization in Complex Dynamical Networks With Random Sensor Delay

This brief proposes a new complex dynamical network model, in which nodes are connected by measured outputs experiencing the random sensor delay. This model is totally different from some existing network models. Then, synchronization in the proposed network model is analyzed by the stochastic stability theory. A sufficient synchronization condition is given to ensure that the proposed network model is exponentially mean-square stable. Theoretical analysis and numerical simulation fully verify the main results.      

基于优化GA-BP神经网络的金融产品营销预测

传统BP神经网络存在着网络结构参数确定过于依赖经验、易于陷入局部解等缺陷,为了改进BP神经网络模型的应用缺陷,提出优化GA-BP算法,通过GA算法优化BP神经网络拓扑结构和网络参数初始值的选取过程,并且为了验证模型的可行性,以某银行短期理财产品营销的客户历史数据作为实证研究对象,并通过与BP神经网络模型的对比实验,验证该模型可以更精确地预测银行理财产品的客户营销结果。实验结果表明将该模型用于对金融产品营销数据的仿真计算,可以更精确地预测未来营销结果。