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异质栅MOSFET器件的栅极由具有不同功函数的两种材料拼接而成,能够提高载流子输运速度、抑制阈值电压漂移等.文中比较了异质栅MOSFET和常规MOSFET的热载流子退化特性.通过使用器件数值模拟软件MEDICI,对能有效监测热载流子效应的参数,例如电场、衬底电流和栅电流等参数进行仿真.将仿真结果与常规MOSFET对比,从抑制热载流子效应方面验证了新结构器件的高性能. 相似文献
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随着半导体微细加工技术的发展,预计硅SOC的集成度可达万亿个晶体管,单个晶体管的尺寸将达到10nm范围内。因此从理论上研究纳米尺寸器件的性能和特性对发展超大规模集成电路尤为重要。综述了纳米级MOSFET器件数值模拟的量子模型,以及在该模型下用到的几种载流子输运模型,并结合模拟结果对这一模型作了评价。 相似文献
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本文提出了能量输运问题的二维MOSFET的数值模拟,其中计入了产生、复合以及载流子的温度梯度对器件特性的影响;还提出了改进的迁移率模型。对微米和亚微米MOSFET样品的模拟结果表明,本文所提出的模型和方法与实验符合得很好。 相似文献
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为了抑制深亚微米SOI MOSFET的短沟道效应,并提高电流驱动能力,提出了异质栅单Halo SOI MOSFET器件结构,其栅极由具有不同功函数的两种材料拼接而成,并在沟道源端一侧引入Halo技术.采用分区的抛物线电势近似法和通用边界条件求解二维Poisson方程,为新结构器件建立了全耗尽条件下的表面势及阈值电压二维解析模型.对新结构器件与常规SOI MOSFET性能进行了对比研究.结果表明,新结构器件能有效抑制阈值电压漂移、热载流子效应和漏致势垒降低效应,并显著提高载流子通过沟道的输运速度.解析模型与器件数值模拟软件MEDICI所得结果高度吻合. 相似文献
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本文在IBM-PC计算机上,数值模拟了线性区CMOS磁敏器件,即对垂直于器件表面磁场敏感的劈裂漏极MOSFET,并将其推广到饱和区。针对器件的矩形结构,采用非均匀矩形网格有限差分方法求解了在磁场存在下载流子的输运方程,给出了电压分布,且分析了灵敏度和线性度。计算结果与实验相符。 相似文献
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高温微电子学—Ⅰ:硅器件的高温特性研究 总被引:1,自引:0,他引:1
本文详细介绍了硅器件的高温理论以及制作的进展,分析了MOSFET的高温特性和失效模式,指出了改善MOSFET高温性能和提高上限温度的方法。 相似文献
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Novel high-voltage silicon-on-insulator MOSFETs 总被引:1,自引:0,他引:1
Novel lateral RESURF high voltage SOI MOSFETs capable of withstanding up to 400V are presented in this paper. The design optimization, fabrication and experimental results obtained on these devices are also presented. The devices are implementable using a CMOS-SOI compatible process. 相似文献
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The fabrication and electrical characteristics of MOSFETs incorporating thin gate oxides deposited by a modified plasma-enhanced chemical-vapor-deposition (PECVD) process are reported. The gate oxide deposition and all subsequent steps were carried out at or below 400°C. These results represent the first demonstration of near-thermal-gate oxide quality. MOSFETs fabricated using a low-temperature PECVD gate oxide process without requiring a high-temperature anneal. The ultimate performance of the deposited oxide devices is shown to be critically dependent on the degree of process induced microroughness of the starting silicon surface. Low-temperature effective mobility measurements are used to compare inversion-layer scattering mechanisms in these devices 相似文献
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Alessandro Marras Ilaria De Munari Davide Vescovi Paolo Ciampolini 《Microelectronics Reliability》2005,45(3-4):499-506
Ultra-thin gate dielectrics are exploited in fabrication of MOSFETs featuring channel lengths in the decananometer range: according to the ITRS oxide thickness in the order of 1 nm will be used in 2005 for ultra-short channel CMOS. For such aggressively scaled devices, gate-leakage currents represent a critical issue. In this paper, a study on the impact of direct-tunneling (DT) current on the performance of a wide variety of CMOS circuits is presented. The approach relies on a mixed-mode simulation approach, which allows for predicting the correlation of major performance indices with oxide thickness. 相似文献
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High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique 总被引:1,自引:0,他引:1
Tezuka T. Nakaharai S. Moriyama Y. Sugiyama N. Takagi S. 《Electron Device Letters, IEEE》2005,26(4):243-245
A new approach to form strained SiGe-on-insulator (SGOI) channel transistors, allowing fabrication of MOSFETs with very high Ge fraction in selected areas on a silicon-on-insulator substrate, is demonstrated. This method consists of epitaxial growth of an SiGe layer with a low Ge fraction and local oxidation processes. An obtained SGOI pMOSFET with a Ge fraction of 0.93 exhibits up to a tenfold enhancement in mobility. It is also found that MOSFETs having strained SGOI channels with thicknesses of less than 5 nm exhibit hole-mobility enhancement factors of over two. These results indicate that the local SGOI channels fabricated by the proposed technique are promising for implementation of high-mobility SiGe or Ge-channel MOSFETs in system-on-chip (SoC) devices. 相似文献
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The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate through a wafer bonding and etch-back technique. The high thermal stability of nitride semiconductors allowed the fabrication of Si MOSFETs on this substrate without degrading the performance of the GaN epilayers. After the Si devices were fabricated, the nitride epilayer is exposed, and the nitride transistors are processed. By using this technology, GaN and Si devices separated by less than 5 mum from each other have been fabricated, which is suitable for building future heterogeneous integrated circuits. 相似文献