基于S3C2440处理器系统的数字图像处理技术和嵌入式技术结合机制

研究基于S3C2440处理器系统的数字图像处理技术和嵌入式技术的结合机制。通过对S3C2440处理器系统进行分析,结合数字图像处理技术和嵌入式技术,优化设计出图像处理系统,提升系统应用效益。结果证实,基于S3C2440处理器系统,结合应用数字图像处理技术与嵌入式技术,使系统处理数字图像的精度提升了12.0%,可以自动识别出图像的形状、颜色、大小等信息。结论表明,基于S3C2440处理器系统,优化设计数字图像处理技术、嵌入式技术的结合机制,对提升图像信息处理精度,发挥了积极的影响。     

基于ARM9的带农历实时时钟LCD显示设计

以ARM9处理器S3C2440和液晶显示屏WXCAT35为基础,设计实现了带农历的实时时钟显示电路.通过串口与S3 C2440通信,实现更改时间和设里报警时间的功能,应用公历转换为农历的算法,实现实时时钟和农历在液晶显示屏上的显示.     

智能电导率仪的设计

智能电导率仪采用交流测量法来测量电导率。正弦激励的产生是通过阻抗测试芯片AD5933来实现的。AD5933输出的正弦激励加在电导池的电极上,AD5933可以计算出溶液阻抗经过傅里叶变换后阻抗的实部R和虚部I(结果保存在AD5933的寄存器中),然后再计算出校准系数A,就可以通过单片机计算出溶液的真实阻抗,进而计算出溶液的电导率。温度补偿电路测量溶液温度,用于修正温度对测量带来的影响。     

基于$3C2440A的直流电机转速控制系统设计

阐述了基于S3C2440A的直流电机调速系统设计。为了方便快速地实现对直流电机转速及转向的控制,设计了以三星公司的S3C2440A处理器和L298N电机驱动芯片构成的控制系统。系统通过设置处理器的相关寄存器控制PWM输出的占空比,从而实现对直流电机转速的调整。详细介绍了S3C2440A处理器中PWM的工作原理及相关寄存器的设置,并给出控制系统的硬件及软件设计,然后通过数字示波器对输出的PWM信号进行观察。通过实验证明,系统能成功地实现要求的功能。     

耗电流低于200μA的低功耗4mA至20mA过程控制电流环路解决方案

AD5933和AD5934是一款高精度的阻抗转换器系统解决方案,集片内可编程频率发生器与12位、1MSPS(AD5933)或250kSPS(AD5934)的模数转换器(ADC)于一身。可调频率发生器产生已知频率来激励外部复阻抗。图1所示电路在低欧姆范围直至数百kΩ范围内产生精确的阻抗测量,同时还优化了AD5933/AD5934的整体精度。     

基于X264的嵌入式视频监控系统设计

介绍了基于嵌入式WinCE和ARM9微处理器的H.264视频监控传输系统的设计与实现。该系统采用ARM9微处理器S3C2440A作为主处理器,Omni Vision公司的彩色CMOS图像传感器OV9650作为视频输入设备,对视频数据进行H.264压缩,可以通过网络把数据传到上位机解码并保存。该系统实现了一种体积小、成本低廉、数字化的监控解决方案,具有广泛的应用价值。     

一种基于嵌入式Linux的视频采集系统

介绍了以S3C2440A为处理器,Micro2440开发板为硬件平台,开发基于嵌入式Linux2.6.32.2操作系统的视频采集系统。该系统以USB摄像头为视频获取工具,通过V4L2编程接口实现摄像头捕获视频数据。实际运行表明,该视频采集系统画面显示稳定流畅、实时性好。     

基于ARM-Linux的数据采集和网络传输系统设计

文中设计了一个基于ARM9处理器和嵌入式Linux OS的多路数据采集和网络传输系统.该系统以三星公司的S3C2440处理器为核心,配以DM9000百兆自适应网络控制芯片,通过互联网将由FPGA控制的多达64路AD采集通道采集的数据发送到网络终端上,实现了远程数据采集的功能.软件平台移植了最新的Linux2.6.30.4内核,并基于Linux OS之上实现了Socket网络应用程序.随着互联网技术的不断发展,本系统在网络时代有着广阔的应用前景.     

基于以太网的远程数据采集系统设计

针对远程数据采集方面的应用需求,设计了一种基于ARM微处理器的以太网数据采集系统。选取S3C2440作为数据处理器和控制器,DM9000作为网络芯片,在Linux为操作平台下,实现了10位数据采集,并将采集到的数据经过S3C2440的处理,通过以太网传输到服务器上。数据传输采用的网络通信协议是TCP/IP协议,通信过程采用C/S模式。     

基于S3C2440嵌入式系统的远程抄表监控系统设计

针对部分偏远地区电表管理水平较低,提出了一种基于嵌入式网络躲控系统的远程抄表技术方案,阐述了基于嵌入式处理器S3C2440A的远程网络监控系统的设计方法,并给出了该系统的结构图,从而建立对电表的测量、控制于一体的嵌入式系统。系统充分利用了S3C2440A和Linux操作系统的强大管理功能,从而性能稳定可靠、实时性好。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.