基于微纳结构的光子轨道角动量复用及检测进展北大核心CSCD

1992年Allen等认识到光子可以携带轨道角动量(OAM),其表现为波前的螺旋相位分布。由于其独特的光场分布以及其拓扑荷理论上可取任意整数等特性, OAM光束在超分辨成像、高密度数据编码等领域具有重要作用。对微纳尺度下OAM光束与物质相互作用新机制的研究,有望为现代光子器件以及多维光与物质相互作用等领域提供新的思路和方法。介绍了本课题组利用OAM光束在纳米结构上实现多维信息复用以及OAM光束拓扑荷的探测技术,并对纳米尺度OAM光束的应用进行了展望。     

直接输出的超短脉冲轨道角动量涡旋光产生技术研究进展（特邀）

轨道角动量（OAM）涡旋光是一种具有相位孤立奇点的光场,其相位波前呈螺旋分布,光场复振幅包含螺旋相位项exp(ilθ)。近年来,OAM涡旋光被广泛地应用在光学操控、成像、通信、传感等方面。超短脉冲OAM涡旋光同时具有涡旋光和超短脉冲的优点,可应用于手性材料加工、远距离传输、强场物理研究,非线性频率转换研究等方面。通过激光器直接产生OAM涡旋光具有系统整体简便性高和光束质量好等优势,对国内外基于有源方法产生超短OAM涡旋光的方法进行了总结。目前,通过有源方式产生的超短OAM涡旋光的脉冲宽度还局限于几百飞秒,如何通过直接输出的方法获得百飞秒以内甚至是少周期脉冲涡旋光输出将是未来研究的一个重要方向。     

多高斯关联扭曲光束在GRIN光纤中的轨道角动量演化

轨道角动量(orbital angular momentum, OAM)的引入丰富了光通信领域内的调制维度,为寻找更高效快捷的通信方式提供了新思路,相较于传统携带涡旋相位的涡旋光束,部分相干扭曲光束携带的OAM性质更为复杂。本文针对椭圆多高斯关联扭曲光束在梯度折射率(gradient-index, GRIN)光纤中的OAM传输,基于GRIN光纤的ABCD光学传输矩阵,着重分析了多高斯关联扭曲光束在GRIN光纤传输的OAM的传输演化特性。研究结果表明,光束的光强、OAM通量密度以及归一化OAM通量密度在光纤传输过程中均呈现周期性变化,通过对关联结构以及扭曲因子的调控不仅可以改变光束OAM通量密度的分布,还可以调控单光子携带OAM的大小。本文的研究有助于丰富扭曲部分相干光束在GRIN光纤中传输的理论结果,在光纤通信中具有潜在的应用前景。     

矢量涡旋光束经光阑-透镜系统的OAM与偏振特性

与标量涡旋光束不同,矢量涡旋光束同时具有各项异性的空间偏振分布和螺旋相位分布,并携带与相位分布有关的轨道角动量(Orbital angular momentum,OAM)。根据柯林斯衍射积分理论,得到了傍轴近似条件下矢量涡旋光束的OAM密度,实验采集了矢量涡旋光束通过光阑-透镜系统后的光场,详细讨论了光阑截断参数以及光阑-透镜间距等参数对矢量涡旋光场及其OAM密度的影响。结果表明:相比标量涡旋光束,矢量涡旋光束OAM通过光阑系统后随传输距离的衰减更慢,受光阑截断参数影响更小。矢量涡旋光束偏振态不受光阑-透镜系统影响,截断参数大于4.2时,轨道角动量密度和光强不受截断参数影响。在透镜焦点位置处,OAM密度达到最大值。研究结果为矢量涡旋光束OAM特性的应用提供理论依据。     

大气湍流下轨道角动量复用态串扰分析

以加载QPSK调制信号的轨道角动量（OAM）光束为传输载波,以多个相位屏模拟大气湍流,研究不同大气湍流强度下OAM复用态的串扰情况。通过对复用光束光强和相位研究,得出在OAM复用态光强受到湍流影响时会发生明显的闪烁现象,光功率分散,相位发生旋转弯曲,且湍流强度越大,受到的影响越大。选用螺旋谱分析不同湍流强度下各OAM复用态之间的弥散程度,当大气湍流强度增加时,OAM态之间的弥散程度增加,且较强湍流会导致OAM复用态失真。同时,考虑OAM复用态之间的模式串扰以及每路携带信息的OAM态因大气信道引起的混合噪声而造成的码间干扰,对比研究了不同大气湍流强度下系统误码率随传输距离的变化,结果表明:系统误码率随传输距离的增长而增大,强湍流之下光束误码率会随着传输距离增长到一定程度后趋于平稳,弱湍流之下光束误码率会随着传输距离的增长而增大。     

轨道角动量叠加态的产生及其检验

带有螺旋相位分布的波束都具有轨道角动量（Orbital Angular Momentum,OAM）,其螺旋相位取决于OAM态拓扑荷数。理论分析了叠加涡旋光束的相位及光场分布,然后将叠加态涡旋光束的相位分布图加载到空间光调制器上产生了多态涡旋光束,讨论了不同拓扑荷数叠加时光场衍射图的分布情况。实验结果表明,叠加态的涡旋光束光场衍射图随着叠加光束拓扑荷数的正负以及数值而呈一定规律性变化,即当叠加的两束光拓扑荷数为异号时,衍射产生的光斑数为两束光拓扑荷数绝对值之和;当叠加的两束光拓扑荷数为同号时,衍射产生的光斑数为两束光拓扑荷数之差的绝对值。通过此性质可以检验涡旋光束的拓扑荷数,为叠加涡旋光束在自由空间光复用通信系统的拓扑荷数检测提供了新的方法。     

大气湍流对拉盖尔-高斯光束传播质量的影响

为了从系统的角度研究大气湍流对涡旋光束传播 质量的影响,根据广义惠更斯-菲涅尔积分和Kolmogorov湍流大气原理,利 用傅里叶光学分析方法和光束分步传播法对携带有轨道角动量(OAM)的 拉盖尔-高斯(LG)光束在湍流大气中的传播进行理论分析与数值仿真, 导出角谱形式的衍射模型及其对应的抽样限制条件。利用桶中功率(PIB,power in bucket)计算方法,分析湍流强度对不同OAM值的LG光束质量的 影响;引入高斯光束和点光源,对比评估典型光束的抗湍流能力。数值仿真结果表明:受大 气湍流影响,随着LG光束在湍流大气 中传播距离增加,光束会聚能力变弱有明显扩散;光束本身特有的环状光强分布及其相应的 相位分布都受到不同程度的破坏,损伤 程度与光束本身携带的OAM数有关;点光源对湍流的影响最为敏 感;高斯光束具有与小OAM值的LG光束相比拟的抗 湍流能力,且比大OAM数的LG光束有更强的抗湍流能力。     

拉盖尔-高斯光束空间传播波前畸变的RMS评估

定量评估拉盖尔-高斯(LG,Laguerre-GAUSS)光束在大气湍流中传输的相位畸变,对 补偿和提高轨道角动量(OAM,Orbital angular momentum)自由空间光通信的质量具有重 要作用。提出将Zernike多项式导出的LG光束波前畸变的均方根(RMS) 作为光束传播的相位畸变评估指标,并在仿真实验中采用分谐波(SH)随机相位屏模拟大气湍 流。 通过Matlab仿真方法对携带不同拓扑荷值的LG光束在湍流中传输的波前畸变(WFD)的RMS进行 分析和讨论。仿真结果表明,利用SH波法产生的随机相位屏比快速傅里叶变换(FFT)法更接 近 实际的大气湍流;受大气湍流影响,LG光束的相位受到破坏,且其损伤程度与光束传输距 离﹑光束携带OAM数l有关;WFD的RMS计算结果与相位仿真结果一致,作为算例,OAM数分别为l＝1、3和5的LG光束传输500m后的WFD的RMS值 依次对应为0.004、0.004和0.005,显示波前畸变愈加严重;对l为1的LG 光束,随着传输距离从500m增大到4500m,其WFD的 RMS值由0.004增大到0.005,也表明WFD更加严重。因 此,RMS定量评估方法可以较为准确和客观地反映LG光束WFD的规 律。     

大气湍流信道中OAM光束与高斯光束传输性能的实验研究

通过实验研究了大气湍流信道下中轨道角动量（OAM）光束与高斯光束的传输性能,并将两种光束的传输性能进行对比。实验以加载调制信号的OAM光束以及高斯光束为传输载波,分别测量了在大气湍流信道下两种光束的光束展宽、指向偏差、功率抖动以及误码率。实验结果表明:在大气湍流信道中传输后,OAM光束相比高斯光束,光束展宽减少10.5%,功率抖动的方差下降0.13,指向偏差的散布圆直径减小30.4%,并且光束中心更集中于接收面中心;OAM光束载波系统的最低探测灵敏度达到?28.97 dBm,相比高斯光束提升2.5 dB。实验结果证明了在大气湍流信道传输中,OAM光束比高斯光束受到湍流的影响更小,并且随着湍流强度的增加,OAM光束恶化程度远小于高斯光束。实验的结论为大气湍流信道下自由空间激光通信的发展和应用提供了参考。     

涡旋光束的几何坐标变换技术及应用研究进展（特邀）

涡旋光场因其具有光学轨道角动量（Orbital angular momentum, OAM）而倍受关注。OAM这一独特物理特征赋予了涡旋光场一个无限高维的空间自由度，同时也引发了光场奇特的干涉、衍射、传输等性质。OAM识别和探测技术的发展是涡旋光从基础研究走向应用的关键。文中聚焦于OAM探测领域的一个重点研究方向——涡旋光几何坐标变换技术。详细介绍了该技术的基本原理、优势特点、研究进展和应用情况。涡旋光几何坐标变换是指通过特殊的调制相位设计，使涡旋光束的空间几何结构发生特殊的变化，从而可通过简单透镜聚焦等方法实现OAM模式的识别、分选等。相较于传统的涡旋光识别和探测技术，涡旋光的几何坐标变换这一新兴技术具有器件无源、无能量损耗、结构紧凑、价格低廉等突出优势，成为涡旋光的空间分离和解复用的高效有力工具，为涡旋光束在经典/量子态密度测量、OAM乘除法器、经典光通信和量子纠缠等前沿应用提供了全新的研究平台，蕴含巨大的发展潜力，具有广阔的发展空间。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.